TW363257B - Semiconductor integrated circuit apparatus and manufacturing method thereof - Google Patents
Semiconductor integrated circuit apparatus and manufacturing method thereofInfo
- Publication number
- TW363257B TW363257B TW086116461A TW86116461A TW363257B TW 363257 B TW363257 B TW 363257B TW 086116461 A TW086116461 A TW 086116461A TW 86116461 A TW86116461 A TW 86116461A TW 363257 B TW363257 B TW 363257B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- over voltage
- circuit apparatus
- manufacturing
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29503796 | 1996-11-07 | ||
PCT/JP1997/003964 WO1998020564A1 (en) | 1996-11-07 | 1997-10-30 | Semiconductor integrated circuit device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
TW363257B true TW363257B (en) | 1999-07-01 |
Family
ID=17815512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116461A TW363257B (en) | 1996-11-07 | 1997-11-05 | Semiconductor integrated circuit apparatus and manufacturing method thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US6469325B1 (zh) |
JP (1) | JP4144901B2 (zh) |
KR (1) | KR100673421B1 (zh) |
CN (2) | CN1521848A (zh) |
AU (1) | AU4726197A (zh) |
TW (1) | TW363257B (zh) |
WO (1) | WO1998020564A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674129B1 (en) | 1999-12-17 | 2004-01-06 | Koninklijke Phillips Electronics N.V. | ESD diode structure |
DE10111462A1 (de) * | 2001-03-09 | 2002-09-19 | Infineon Technologies Ag | Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur |
JP2003060088A (ja) * | 2001-08-14 | 2003-02-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2003100899A (ja) * | 2001-09-27 | 2003-04-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
CN100570872C (zh) * | 2002-05-24 | 2009-12-16 | 独立行政法人产业技术综合研究所 | 电信号传输线 |
JP4651044B2 (ja) | 2004-02-13 | 2011-03-16 | オーストリアマイクロシステムズ アクチエンゲゼルシャフト | 集積半導体回路を保護するための回路装置および方法 |
JP2006303110A (ja) * | 2005-04-19 | 2006-11-02 | Nec Electronics Corp | 半導体装置 |
JP5132077B2 (ja) * | 2006-04-18 | 2013-01-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP2008205271A (ja) * | 2007-02-21 | 2008-09-04 | Matsushita Electric Ind Co Ltd | 半導体保護回路およびその製造方法、半導体保護回路の動作方法 |
JP2009054851A (ja) * | 2007-08-28 | 2009-03-12 | Panasonic Corp | 半導体集積回路 |
US20110032648A1 (en) * | 2008-04-09 | 2011-02-10 | Nxp B.V. | Esd protection |
JP2010067632A (ja) * | 2008-09-08 | 2010-03-25 | Sharp Corp | 静電気保護素子 |
US9385241B2 (en) * | 2009-07-08 | 2016-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits |
CN102034806B (zh) * | 2009-09-24 | 2014-08-13 | 新唐科技股份有限公司 | 静电放电防护装置 |
US8053898B2 (en) * | 2009-10-05 | 2011-11-08 | Samsung Electronics Co., Ltd. | Connection for off-chip electrostatic discharge protection |
US8405941B2 (en) | 2009-11-30 | 2013-03-26 | Nuvoton Technology Corporation | ESD protection apparatus and ESD device therein |
JP5990986B2 (ja) * | 2012-04-10 | 2016-09-14 | 三菱電機株式会社 | 保護ダイオード |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51146188A (en) * | 1975-06-11 | 1976-12-15 | Fujitsu Ltd | Diode device |
DE3422132C1 (de) * | 1984-06-14 | 1986-01-09 | Texas Instruments Deutschland Gmbh, 8050 Freising | Schutzschaltungsanordnung |
US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
JPH01158766A (ja) * | 1987-12-16 | 1989-06-21 | Matsushita Electron Corp | 半導体装置 |
US4989057A (en) * | 1988-05-26 | 1991-01-29 | Texas Instruments Incorporated | ESD protection for SOI circuits |
US4870530A (en) * | 1988-06-27 | 1989-09-26 | Advanced Micro Devices, Inc. | Electrostatic discharge protection circuitry for any two external pins of an I.C. package |
JPH0817206B2 (ja) * | 1990-03-02 | 1996-02-21 | 株式会社東芝 | 半導体装置 |
JPH0677405A (ja) * | 1990-07-31 | 1994-03-18 | Texas Instr Inc <Ti> | 低電圧トリガ式esd保護回路 |
JPH04196352A (ja) * | 1990-11-28 | 1992-07-16 | Nissan Motor Co Ltd | 半導体保護装置 |
FR2690786A1 (fr) * | 1992-04-30 | 1993-10-29 | Sgs Thomson Microelectronics Sa | Dispositif de protection d'un circuit intégré contre les décharges électrostatiques. |
US5400202A (en) * | 1992-06-15 | 1995-03-21 | Hewlett-Packard Company | Electrostatic discharge protection circuit for integrated circuits |
JP2874583B2 (ja) * | 1995-02-10 | 1999-03-24 | 日本電気株式会社 | 半導体装置の入力保護回路 |
US6064093A (en) * | 1996-03-29 | 2000-05-16 | Citizen Watch Co., Ltd. | Protection circuit with clamping feature for semiconductor device |
JPH10270567A (ja) * | 1997-03-21 | 1998-10-09 | Oki Electric Ind Co Ltd | トランジスタ保護素子 |
-
1997
- 1997-10-30 JP JP52121198A patent/JP4144901B2/ja not_active Expired - Fee Related
- 1997-10-30 WO PCT/JP1997/003964 patent/WO1998020564A1/ja not_active Application Discontinuation
- 1997-10-30 AU AU47261/97A patent/AU4726197A/en not_active Abandoned
- 1997-10-30 CN CNA2004100282767A patent/CN1521848A/zh active Pending
- 1997-10-30 KR KR1019997003926A patent/KR100673421B1/ko not_active IP Right Cessation
- 1997-10-30 CN CNB97199501XA patent/CN1150628C/zh not_active Expired - Fee Related
- 1997-10-30 US US09/297,513 patent/US6469325B1/en not_active Expired - Fee Related
- 1997-11-05 TW TW086116461A patent/TW363257B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1236485A (zh) | 1999-11-24 |
KR20000053032A (ko) | 2000-08-25 |
CN1150628C (zh) | 2004-05-19 |
CN1521848A (zh) | 2004-08-18 |
AU4726197A (en) | 1998-05-29 |
WO1998020564A1 (en) | 1998-05-14 |
KR100673421B1 (ko) | 2007-01-23 |
US6469325B1 (en) | 2002-10-22 |
JP4144901B2 (ja) | 2008-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW363257B (en) | Semiconductor integrated circuit apparatus and manufacturing method thereof | |
TW364213B (en) | A semiconductor light-emitting device | |
KR910017562A (ko) | 반도체 기판에 형성된 절연체를 평탄화시키는 방법 및 장치 | |
WO2005094522A3 (en) | Method and apparatus for protecting a gate oxide using source/bulk pumping | |
GB2113468A (en) | Integrated gate protection arrangement | |
JPH0837238A (ja) | 半導体集積回路装置 | |
EP0851494A3 (en) | Semiconductor device having a protection circuit | |
TW331036B (en) | Integrated circuit functionality security | |
DE69132226T2 (de) | Elastomerische abdichtung für einen elektrischen verbinder | |
KR970006534B1 (en) | Semiconductor integrated circuit package and its manufacture and its mounting method | |
MY125061A (en) | Method for plating a bond finger of an integrated circuit package | |
EP0886313A4 (en) | RESIN SEALED SEMICONDUCTOR DEVICE, MANUFACTURE OF SUCH DEVICE | |
FR2734983B1 (fr) | Utilisation d'un micromodule comme boitier de montage en surface et procede correspondant | |
TW345733B (en) | Integrated semiconductor circuit | |
CN1319171C (zh) | 具有改进的静电放电耐压的半导体装置 | |
SE9900502D0 (sv) | Spark gap for high voltage integrated circuit electrostatic discharge protection | |
IT1186337B (it) | Dispositivo elettronico per la protezione di circuiti integrati da cariche elettrostatiche,e procedimento per la sua fabbricazione | |
MY118940A (en) | Semiconductor device with an insulation film having an end covered by a conductive film | |
TW327237B (en) | Semiconductor device and method for forming the same | |
TW349251B (en) | Semiconductor device and process for producing the same | |
EP0398468A3 (en) | Dielectrically isolated substrate and semiconductor device using the same | |
EP0772237A3 (en) | Semiconductor device including protection means | |
JPS60178646A (ja) | 静電シ−ルドを有する半導体集積回路 | |
JP2940523B2 (ja) | 半導体装置及びその実装方法 | |
DE69838507D1 (de) | Gesicherte integrierte halbleiterschaltungsanordnung und herstellungsverfahren |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |