TW345661B - Semiconductor memory device and its driving method - Google Patents

Semiconductor memory device and its driving method

Info

Publication number
TW345661B
TW345661B TW083110378A TW83110378A TW345661B TW 345661 B TW345661 B TW 345661B TW 083110378 A TW083110378 A TW 083110378A TW 83110378 A TW83110378 A TW 83110378A TW 345661 B TW345661 B TW 345661B
Authority
TW
Taiwan
Prior art keywords
memory cell
redundant
address data
memory device
address
Prior art date
Application number
TW083110378A
Other languages
English (en)
Inventor
Hiroshige Hirano
Jyoji Nakane
Tetuharu Nakaguma
Nobuyuki Moriwaki
Toshio Hayashi
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW345661B publication Critical patent/TW345661B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)
TW083110378A 1994-04-25 1994-11-09 Semiconductor memory device and its driving method TW345661B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6086685A JP2914171B2 (ja) 1994-04-25 1994-04-25 半導体メモリ装置およびその駆動方法

Publications (1)

Publication Number Publication Date
TW345661B true TW345661B (en) 1998-11-21

Family

ID=13893863

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110378A TW345661B (en) 1994-04-25 1994-11-09 Semiconductor memory device and its driving method

Country Status (7)

Country Link
US (1) US5523974A (zh)
EP (1) EP0679996B1 (zh)
JP (1) JP2914171B2 (zh)
KR (1) KR100195606B1 (zh)
CN (1) CN1086836C (zh)
DE (1) DE69527741T2 (zh)
TW (1) TW345661B (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09180492A (ja) * 1995-12-26 1997-07-11 Sony Corp 半導体記憶装置
US5657281A (en) * 1996-03-11 1997-08-12 Cirrus Logic, Inc. Systems and methods for implementing inter-device cell replacements
KR100205006B1 (ko) * 1996-10-08 1999-06-15 윤종용 자동 결함 블럭 맵핑 기능을 갖는 반도체 메모리 장치
US5793683A (en) * 1997-01-17 1998-08-11 International Business Machines Corporation Wordline and bitline redundancy with no performance penalty
DE19708963C2 (de) * 1997-03-05 1999-06-02 Siemens Ag Halbleiterdatenspeicher mit einer Redundanzschaltung
JPH10334689A (ja) * 1997-05-30 1998-12-18 Fujitsu Ltd 半導体記憶装置
FR2770020B1 (fr) * 1997-10-20 2001-05-18 Sgs Thomson Microelectronics Memoire a fonction d'auto-reparation
JPH11203890A (ja) * 1998-01-05 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
DE19821459A1 (de) * 1998-05-13 1999-11-18 Siemens Ag Anordnung zur Redundanzauswertung bei einem Halbleiterspeicherchip
JP2000048567A (ja) * 1998-05-22 2000-02-18 Mitsubishi Electric Corp 同期型半導体記憶装置
KR100333720B1 (ko) * 1998-06-30 2002-06-20 박종섭 강유전체메모리소자의리던던시회로
KR100641081B1 (ko) * 1998-10-29 2007-12-04 주식회사 하이닉스반도체 플레쉬 메모리의 리페어회로
KR100300873B1 (ko) * 1998-12-30 2001-09-06 박종섭 강유전체 커패시터를 사용한 반도체 메모리 장치의 리던던시 회로 및 수리 방법
JP2001143494A (ja) * 1999-03-19 2001-05-25 Toshiba Corp 半導体記憶装置
CN100585742C (zh) * 1999-03-19 2010-01-27 株式会社东芝 半导体存储装置
JP3586591B2 (ja) * 1999-07-01 2004-11-10 シャープ株式会社 冗長機能を有する不揮発性半導体メモリ装置のための不良アドレスデータ記憶回路および不良アドレスデータ書き込み方法
JP3755346B2 (ja) * 1999-07-26 2006-03-15 富士通株式会社 不揮発性半導体記憶装置
US6462985B2 (en) * 1999-12-10 2002-10-08 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory for storing initially-setting data
US7089360B1 (en) 2000-03-22 2006-08-08 Intel Corporation Shared cache wordline decoder for redundant and regular addresses
JP3594891B2 (ja) * 2000-09-12 2004-12-02 沖電気工業株式会社 半導体記憶装置およびその検査方法
JP3848069B2 (ja) 2000-09-22 2006-11-22 株式会社東芝 半導体記憶装置
JP4184586B2 (ja) * 2000-09-28 2008-11-19 株式会社東芝 半導体記憶装置
US6496428B2 (en) 2001-01-19 2002-12-17 Fujitsu Limited Semiconductor memory
JP3945993B2 (ja) * 2001-03-29 2007-07-18 富士通株式会社 半導体記憶装置
KR100434315B1 (ko) * 2001-06-11 2004-06-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치의 페일 구제회로 및 그구제방법
US6707752B2 (en) * 2001-06-22 2004-03-16 Intel Corporation Tag design for cache access with redundant-form address
JP5119563B2 (ja) * 2001-08-03 2013-01-16 日本電気株式会社 不良メモリセル救済回路を有する半導体記憶装置
JP2003208796A (ja) * 2002-01-15 2003-07-25 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6801471B2 (en) * 2002-02-19 2004-10-05 Infineon Technologies Ag Fuse concept and method of operation
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
KR100492773B1 (ko) * 2002-12-02 2005-06-07 주식회사 하이닉스반도체 확장 메모리 부를 구비한 강유전체 메모리 장치
US7174477B2 (en) * 2003-02-04 2007-02-06 Micron Technology, Inc. ROM redundancy in ROM embedded DRAM
DE102004003357B4 (de) * 2003-05-20 2008-10-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Dynamische, in FeRAMS integrierte Referenzspannungskalibrierung
JP4641726B2 (ja) * 2004-01-07 2011-03-02 パナソニック株式会社 半導体記憶装置
US7699232B2 (en) * 2004-02-06 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7663473B2 (en) * 2004-02-12 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes
KR100622349B1 (ko) * 2004-08-04 2006-09-14 삼성전자주식회사 불량 블록 관리 기능을 가지는 플레시 메모리 장치 및플레시 메모리 장치의 불량 블록 관리 방법.
WO2010038630A1 (en) * 2008-09-30 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8638596B2 (en) * 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
JP2012119058A (ja) * 2012-02-13 2012-06-21 Fujitsu Semiconductor Ltd 不揮発性半導体メモリ
JP6706371B2 (ja) * 2018-08-08 2020-06-03 シャープ株式会社 表示装置およびその制御方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0086905B1 (de) * 1982-02-18 1987-04-08 Deutsche ITT Industries GmbH Speichersystem mit einer integrierten Matrix aus nichtflüchtigen, umprogrammierbaren Speicherzellen
JPS59192740U (ja) * 1983-06-02 1984-12-21 パイオニア株式会社 コンピユ−タ装置
US4744060A (en) * 1984-10-19 1988-05-10 Fujitsu Limited Bipolar-transistor type random access memory having redundancy configuration
JPS6214399A (ja) * 1985-07-12 1987-01-22 Fujitsu Ltd 半導体記憶装置
US4757474A (en) * 1986-01-28 1988-07-12 Fujitsu Limited Semiconductor memory device having redundancy circuit portion
JPH0668917B2 (ja) * 1987-05-15 1994-08-31 日本電気株式会社 メモリ素子入換制御回路
US5128944A (en) * 1989-05-26 1992-07-07 Texas Instruments Incorporated Apparatus and method for providing notification of bit-cell failure in a redundant-bit-cell memory
US5357458A (en) * 1993-06-25 1994-10-18 Advanced Micro Devices, Inc. System for allowing a content addressable memory to operate with multiple power voltage levels
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay

Also Published As

Publication number Publication date
CN1086836C (zh) 2002-06-26
DE69527741T2 (de) 2003-04-03
CN1114456A (zh) 1996-01-03
EP0679996B1 (en) 2002-08-14
US5523974A (en) 1996-06-04
KR950030166A (ko) 1995-11-24
JPH07296595A (ja) 1995-11-10
JP2914171B2 (ja) 1999-06-28
DE69527741D1 (de) 2002-09-19
EP0679996A3 (en) 1998-11-11
EP0679996A2 (en) 1995-11-02
KR100195606B1 (ko) 1999-06-15

Similar Documents

Publication Publication Date Title
TW345661B (en) Semiconductor memory device and its driving method
TW330265B (en) Semiconductor apparatus
TW337018B (en) Semiconductor nonvolatile memory device
DE69602013D1 (de) Parallelverarbeitungsredundanzs-vorrichtung und -verfahren für schnellere zugriffszeit und kleinere matrizeoberfläche
TW344133B (en) Semiconductor memory
KR910010534A (ko) 반도체 기억장치의 용장회로
TW363188B (en) Semiconductor memory device
KR960008824B1 (en) Multi bit test circuit and method of semiconductor memory device
EP1215678A3 (en) Semiconductor memory, and memory access method
TW375706B (en) Programmable memory access
TW363189B (en) Semiconductor non-volatile memory apparatus and the computer system to make use of the apparatus
TW430815B (en) Semiconductor integrated circuit memory and, bus control method
JPS57111893A (en) Relieving system of defective memory
KR920006974A (ko) 다이너믹형 반도체기억장치
EP0428396A3 (en) Bit error correcting circuit for a nonvolatile memory
EP0365023A3 (en) Address control circuit for data memory employed in signal delay circuit
TW332355B (en) Semiconductor device having a latch circuit for latching externally input data
TW353180B (en) A method and apparatus for bit cell ground choking for improved memory write margin
TW330293B (en) Memory chip architecture and packaging method with increased production yield
TW238387B (en) Decoding circuit for semiconductor memory device and its process
TW349226B (en) A test method of high speed memory devices in which limit conditions for the clock signals are defined
EP0788107A3 (en) Semiconductor memory device
EP0357502A3 (en) Programmable semiconductor memory circuit
JPS57127997A (en) Semiconductor integrated storage device
TW358908B (en) Data processing device