DE69602013D1 - Parallelverarbeitungsredundanzs-vorrichtung und -verfahren für schnellere zugriffszeit und kleinere matrizeoberfläche - Google Patents
Parallelverarbeitungsredundanzs-vorrichtung und -verfahren für schnellere zugriffszeit und kleinere matrizeoberflächeInfo
- Publication number
- DE69602013D1 DE69602013D1 DE69602013T DE69602013T DE69602013D1 DE 69602013 D1 DE69602013 D1 DE 69602013D1 DE 69602013 T DE69602013 T DE 69602013T DE 69602013 T DE69602013 T DE 69602013T DE 69602013 D1 DE69602013 D1 DE 69602013D1
- Authority
- DE
- Germany
- Prior art keywords
- parallel processing
- matrice
- smaller
- access time
- faster access
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Dram (AREA)
- Time-Division Multiplex Systems (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/387,018 US5627786A (en) | 1995-02-10 | 1995-02-10 | Parallel processing redundancy scheme for faster access times and lower die area |
PCT/US1996/001831 WO1996024897A2 (en) | 1995-02-10 | 1996-02-09 | Parallel processing redundancy scheme for faster access times and lower die area |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69602013D1 true DE69602013D1 (de) | 1999-05-12 |
DE69602013T2 DE69602013T2 (de) | 1999-08-05 |
Family
ID=23528088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69602013T Expired - Lifetime DE69602013T2 (de) | 1995-02-10 | 1996-02-09 | Parallelverarbeitungsredundanzs-vorrichtung und -verfahren für schnellere zugriffszeit und kleinere matrizeoberfläche |
Country Status (5)
Country | Link |
---|---|
US (2) | US5627786A (de) |
EP (1) | EP0808486B1 (de) |
AT (1) | ATE178724T1 (de) |
DE (1) | DE69602013T2 (de) |
WO (1) | WO1996024897A2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6081870A (en) * | 1997-11-06 | 2000-06-27 | Micron Technology, Inc. | Method and apparatus to achieve fast suspend in flash memories |
US6077211A (en) * | 1998-02-27 | 2000-06-20 | Micron Technology, Inc. | Circuits and methods for selectively coupling redundant elements into an integrated circuit |
JP3871469B2 (ja) | 1998-11-27 | 2007-01-24 | 松下電器産業株式会社 | 半導体メモリ装置および信号線切替回路 |
US6246615B1 (en) | 1998-12-23 | 2001-06-12 | Micron Technology, Inc. | Redundancy mapping in a multichip semiconductor package |
TWI225863B (en) * | 1999-03-24 | 2005-01-01 | Takeda Chemical Industries Ltd | Thienopyrimidine compounds, their production and use |
JP2001084791A (ja) * | 1999-07-12 | 2001-03-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6484271B1 (en) | 1999-09-16 | 2002-11-19 | Koninklijke Philips Electronics N.V. | Memory redundancy techniques |
US6728161B1 (en) * | 2000-06-30 | 2004-04-27 | Micron Technology, Inc. | Zero latency-zero bus turnaround synchronous flash memory |
US6851026B1 (en) | 2000-07-28 | 2005-02-01 | Micron Technology, Inc. | Synchronous flash memory with concurrent write and read operation |
US6615307B1 (en) * | 2000-05-10 | 2003-09-02 | Micron Technology, Inc. | Flash with consistent latency for read operations |
US6883044B1 (en) * | 2000-07-28 | 2005-04-19 | Micron Technology, Inc. | Synchronous flash memory with simultaneous access to one or more banks |
US6496425B1 (en) | 2000-08-21 | 2002-12-17 | Micron Technology, Inc | Multiple bit line column redundancy |
US6445625B1 (en) | 2000-08-25 | 2002-09-03 | Micron Technology, Inc. | Memory device redundancy selection having test inputs |
US6504768B1 (en) | 2000-08-25 | 2003-01-07 | Micron Technology, Inc. | Redundancy selection in memory devices with concurrent read and write |
US7978219B1 (en) | 2000-08-30 | 2011-07-12 | Kevin Reid Imes | Device, network, server, and methods for providing digital images and associated processing information |
US8326352B1 (en) | 2000-09-06 | 2012-12-04 | Kevin Reid Imes | Device, network, server, and methods for providing service requests for wireless communication devices |
ITRM20010104A1 (it) * | 2001-02-27 | 2002-08-27 | Micron Technology Inc | Modo di lettura a compressione di dati per il collaudo di memorie. |
JP2004063023A (ja) * | 2002-07-30 | 2004-02-26 | Renesas Technology Corp | 半導体記憶装置 |
JP3984209B2 (ja) * | 2003-07-31 | 2007-10-03 | 株式会社東芝 | 半導体記憶装置 |
DE202004012766U1 (de) * | 2004-08-14 | 2006-01-19 | Flür, Peter, Dr. | System zur Automatisierung von administrativen Routineaufgaben |
ITRM20040418A1 (it) * | 2004-08-25 | 2004-11-25 | Micron Technology Inc | Modo di lettura a compressione di dati a piu' livelli per il collaudo di memorie. |
KR100645044B1 (ko) * | 2004-09-17 | 2006-11-10 | 삼성전자주식회사 | 높은 신뢰도를 갖는 불 휘발성 메모리 장치의 프로그램 방법 |
US7035152B1 (en) * | 2004-10-14 | 2006-04-25 | Micron Technology, Inc. | System and method for redundancy memory decoding |
US7259373B2 (en) * | 2005-07-08 | 2007-08-21 | Nexgensemi Holdings Corporation | Apparatus and method for controlled particle beam manufacturing |
US7224605B1 (en) * | 2006-03-24 | 2007-05-29 | Sandisk Corporation | Non-volatile memory with redundancy data buffered in data latches for defective locations |
US7324389B2 (en) * | 2006-03-24 | 2008-01-29 | Sandisk Corporation | Non-volatile memory with redundancy data buffered in remote buffer circuits |
US7352635B2 (en) * | 2006-03-24 | 2008-04-01 | Sandisk Corporation | Method for remote redundancy for non-volatile memory |
US7394690B2 (en) * | 2006-03-24 | 2008-07-01 | Sandisk Corporation | Method for column redundancy using data latches in solid-state memories |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4250570B1 (en) * | 1976-07-15 | 1996-01-02 | Intel Corp | Redundant memory circuit |
US4389715A (en) * | 1980-10-06 | 1983-06-21 | Inmos Corporation | Redundancy scheme for a dynamic RAM |
US4459685A (en) * | 1982-03-03 | 1984-07-10 | Inmos Corporation | Redundancy system for high speed, wide-word semiconductor memories |
FR2611301B1 (fr) * | 1987-02-24 | 1989-04-21 | Thomson Semiconducteurs | Memoire integree avec redondance de colonnes de donnees |
JPH01109599A (ja) * | 1987-10-22 | 1989-04-26 | Nec Corp | 書込み・消去可能な半導体記憶装置 |
US4807191A (en) * | 1988-01-04 | 1989-02-21 | Motorola, Inc. | Redundancy for a block-architecture memory |
US4885720A (en) * | 1988-04-01 | 1989-12-05 | International Business Machines Corporation | Memory device and method implementing wordline redundancy without an access time penalty |
GB8926004D0 (en) * | 1989-11-17 | 1990-01-10 | Inmos Ltd | Repairable memory circuit |
JPH06111596A (ja) * | 1990-10-09 | 1994-04-22 | Texas Instr Inc <Ti> | メモリ |
JP2596208B2 (ja) * | 1990-10-19 | 1997-04-02 | 日本電気株式会社 | メモリ装置 |
US5265054A (en) * | 1990-12-14 | 1993-11-23 | Sgs-Thomson Microelectronics, Inc. | Semiconductor memory with precharged redundancy multiplexing |
JPH05166396A (ja) * | 1991-12-12 | 1993-07-02 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5262994A (en) * | 1992-01-31 | 1993-11-16 | Sgs-Thomson Microelectronics, Inc. | Semiconductor memory with a multiplexer for selecting an output for a redundant memory access |
US5268866A (en) * | 1992-03-02 | 1993-12-07 | Motorola, Inc. | Memory with column redundancy and localized column redundancy control signals |
-
1995
- 1995-02-10 US US08/387,018 patent/US5627786A/en not_active Expired - Lifetime
-
1996
- 1996-02-09 EP EP96904610A patent/EP0808486B1/de not_active Expired - Lifetime
- 1996-02-09 AT AT96904610T patent/ATE178724T1/de not_active IP Right Cessation
- 1996-02-09 WO PCT/US1996/001831 patent/WO1996024897A2/en active IP Right Grant
- 1996-02-09 DE DE69602013T patent/DE69602013T2/de not_active Expired - Lifetime
-
1997
- 1997-03-27 US US08/826,241 patent/US5808946A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69602013T2 (de) | 1999-08-05 |
WO1996024897A2 (en) | 1996-08-15 |
WO1996024897A3 (en) | 1996-10-17 |
US5808946A (en) | 1998-09-15 |
US5627786A (en) | 1997-05-06 |
EP0808486B1 (de) | 1999-04-07 |
ATE178724T1 (de) | 1999-04-15 |
EP0808486A2 (de) | 1997-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69602013D1 (de) | Parallelverarbeitungsredundanzs-vorrichtung und -verfahren für schnellere zugriffszeit und kleinere matrizeoberfläche | |
KR950004854B1 (ko) | 반도체 메모리 장치 | |
AU640813B2 (en) | A data processing system including a memory controller for direct or interleave memory accessing | |
TW345661B (en) | Semiconductor memory device and its driving method | |
KR900015323A (ko) | 반도체 기억장치 | |
TW330265B (en) | Semiconductor apparatus | |
KR890017706A (ko) | 다이나믹형 반도체 기억장치 | |
KR930020472A (ko) | 틀림정정회로를 가지는 이이피롬 | |
KR970051455A (ko) | 리던던트셀 테스트 제어회로를 구비하는 반도체 메모리장치 | |
JPH07175712A (ja) | メモリ装置 | |
TW375826B (en) | Merged DQ circuit of semiconductor device and method thereof | |
JP3240897B2 (ja) | 半導体記憶装置 | |
KR970067382A (ko) | 다이나믹 랜덤 억세스 메모리내의 패리티 검사 논리 회로를 위한 방법 및 장치 | |
KR940004655A (ko) | 집적회로 | |
KR960005625A (ko) | 테스트타임이 단축되는 반도체메모리장치 및 이를 위한 컬럼선택트랜지스터 제어방법 | |
KR970706577A (ko) | 메모리 시스템내의 페이지 액세스 및 블록전송을 개선하는 회로, 시스템 및 방법(circuits, systems and methods for improving page accesses and block transfers in a memory system) | |
KR950009745A (ko) | 반도체 기억장치 | |
JPH0935483A (ja) | 内部複写機能付きの半導体メモリ装置 | |
KR970060223A (ko) | 반도체 기억 장치 및 그 제어 방법 | |
JP2680475B2 (ja) | 半導体メモリ装置 | |
JPH05210981A (ja) | 半導体記憶装置 | |
KR900005445A (ko) | 초고집적/대용량 메모리 집적회로에서 리던던시 스킴 방법 및 그 장치 | |
KR970055848A (ko) | 무선이동통신 시스템에서 기지국에 사용된 인터리버의 파이프라인 방식 제어방법 | |
KR960006008A (ko) | 병렬 테스트 회로를 포함한 메모리 소자 | |
KR900003746A (ko) | 어드레스 메모리 유니트 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |