TW344100B - Semiconductor liquid phase epitaxial growth method and apparatus - Google Patents

Semiconductor liquid phase epitaxial growth method and apparatus

Info

Publication number
TW344100B
TW344100B TW086107102A TW86107102A TW344100B TW 344100 B TW344100 B TW 344100B TW 086107102 A TW086107102 A TW 086107102A TW 86107102 A TW86107102 A TW 86107102A TW 344100 B TW344100 B TW 344100B
Authority
TW
Taiwan
Prior art keywords
epitaxial growth
heating furnace
wafer holder
high temperature
source
Prior art date
Application number
TW086107102A
Other languages
English (en)
Inventor
Kazuyoshi Yoshikawa
Masami Iwamoto
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW344100B publication Critical patent/TW344100B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW086107102A 1996-05-31 1997-05-26 Semiconductor liquid phase epitaxial growth method and apparatus TW344100B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13897696 1996-05-31

Publications (1)

Publication Number Publication Date
TW344100B true TW344100B (en) 1998-11-01

Family

ID=15234577

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107102A TW344100B (en) 1996-05-31 1997-05-26 Semiconductor liquid phase epitaxial growth method and apparatus

Country Status (4)

Country Link
US (1) US5922126A (zh)
EP (1) EP0810306A3 (zh)
KR (1) KR100272139B1 (zh)
TW (1) TW344100B (zh)

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US6231667B1 (en) * 1997-11-28 2001-05-15 Canon Kabushiki Kaisha Liquid phase growth method and liquid phase growth apparatus
US6465809B1 (en) 1999-06-09 2002-10-15 Kabushiki Kaisha Toshiba Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
US6953506B2 (en) * 2000-10-30 2005-10-11 Canon Kabushiki Kaisha Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same
DE10135574B4 (de) * 2001-07-20 2009-09-10 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Fertigung von Schichtstrukturen auf Substraten mittels Flüssigphasenepitaxie
JP2003292395A (ja) * 2002-03-29 2003-10-15 Canon Inc 液相成長装置および液相成長方法
KR20060095951A (ko) 2003-09-25 2006-09-05 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판의 제조 방법
DE102006003591A1 (de) * 2005-01-26 2006-08-17 Disco Corporation Laserstrahlbearbeitungsmaschine
JP4946247B2 (ja) * 2006-08-04 2012-06-06 信越半導体株式会社 エピタキシャル基板および液相エピタキシャル成長方法
CN102197168B (zh) * 2008-08-29 2014-03-12 新日铁住金株式会社 SiC单晶膜的制造方法及装置
US9343273B2 (en) * 2008-09-25 2016-05-17 Seagate Technology Llc Substrate holders for uniform reactive sputtering
DE102010052689A1 (de) * 2010-11-26 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrathalter für die Oberflächenbehandlung von Substraten und Verwendung des Substrathalters
CN103014844A (zh) * 2012-11-30 2013-04-03 中国科学院上海技术物理研究所 一种碲镉汞垂直液相外延样品架
CN111599664B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种硅片承载装置以及非对称扩散掺杂方法

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JPS5344311A (en) * 1973-07-05 1978-04-21 Masahiro Hiyamuta Stripper for reaper
JPS5595321A (en) * 1979-01-12 1980-07-19 Matsushita Electric Ind Co Ltd Container of semiconductor substrate for liquid-phase epitaxial growth
JPS6021897A (ja) * 1983-07-13 1985-02-04 Hitachi Cable Ltd 液相エピタキシヤル結晶成長方法
JPS60115271A (ja) * 1983-11-28 1985-06-21 Showa Denko Kk リン化ガリウム赤色発光素子の製造方法
JPS6131385A (ja) * 1984-07-23 1986-02-13 Showa Denko Kk 液相エピタキシヤル成長方法
JPS6283398A (ja) * 1985-10-04 1987-04-16 Showa Denko Kk 液相エピタキシヤル成長装置
DE3617404A1 (de) * 1986-05-23 1987-11-26 Telefunken Electronic Gmbh Verfahren zum epitaktischen abscheiden duenner einkristalliner halbleiterschichten aus pseudobinaerem halbleitermaterial auf einem einkristallinen substrat
JPS6350392A (ja) * 1986-08-20 1988-03-03 Nec Corp エピタキシヤル成長法
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JPH02221187A (ja) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd 液相エピタキシャル成長方法
JPH02302391A (ja) * 1989-05-17 1990-12-14 Sumitomo Electric Ind Ltd 液相エピタキシャル成長法及びその装置
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JP2841826B2 (ja) * 1990-10-23 1998-12-24 住友電気工業株式会社 液相エピタキシヤル成長方法
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JP2599088B2 (ja) * 1993-04-12 1997-04-09 信越半導体株式会社 ＧａＰ赤色発光素子基板及びその製造方法
JPH0769784A (ja) * 1993-09-07 1995-03-14 Nisshin Steel Co Ltd 液相エピタキシャル成長装置
US5512511A (en) * 1994-05-24 1996-04-30 Santa Barbara Research Center Process for growing HgCdTe base and contact layer in one operation
JP3163217B2 (ja) * 1994-05-31 2001-05-08 シャープ株式会社 発光ダイオード及びその製造方法
JP2915787B2 (ja) * 1994-05-31 1999-07-05 日本碍子株式会社 酸化物単結晶膜の製造方法及びその装置

Also Published As

Publication number Publication date
KR970077165A (ko) 1997-12-12
US5922126A (en) 1999-07-13
EP0810306A2 (en) 1997-12-03
EP0810306A3 (en) 2000-03-01
KR100272139B1 (ko) 2000-12-01

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MM4A Annulment or lapse of patent due to non-payment of fees