JPS6461385A - Liquid epitaxial growth process - Google Patents

Abstract

PURPOSE:To improve uniformity and reproducibility of film thickness and obtain an epitaxially grown layer in high mass-productivity and accuracy, by transferring a solution for growth to a specific intermediate solution reservoir in a vertical epitaxial growth process, adjusting the solution to a supersaturated state with uniform temperature gradient and contacting the solution with a substrate. CONSTITUTION:An intermediate liquid reservoir 5 having plural narrow spaces 5b having a thickness of 1-10mm and partitioned with plural partition walls 5a is placed between a growth solution reservoir 2 holding a growth solution 8 and a substrate holding part 4 placed above the reservoir 2 and holding plural substrates 7 with respective holding tools 4a in vertical state. In the above vertical epitaxial growth apparatus, polycrystalline GaAs is dissolved in Ga held in the growth solution reservoir 2 to saturated state and the obtained growth solution 8 is dispensed to each space 5b by pushing a reciprocative piston 3 and slowly cooled to uniformize the temperature distribution and to get supersaturated state. The piston 3 is further pushed forward to contact the solution with plural substrates 7 such as GaAs held vertically with the substrate holding part 4 to start the epitaxial growth. A multiple-layered epitaxial growth wafer having uniform film thickness can be produced by this process.