JPS6469593A - Apparatus for liquid epitaxial growth of semiconductor crystal - Google Patents

Apparatus for liquid epitaxial growth of semiconductor crystal

Info

Publication number
JPS6469593A
JPS6469593A JP22614687A JP22614687A JPS6469593A JP S6469593 A JPS6469593 A JP S6469593A JP 22614687 A JP22614687 A JP 22614687A JP 22614687 A JP22614687 A JP 22614687A JP S6469593 A JPS6469593 A JP S6469593A
Authority
JP
Japan
Prior art keywords
recess
crystal
slider
epitaxial growth
substrate crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22614687A
Other languages
Japanese (ja)
Inventor
Masaaki Sakata
Kiyotaka Benzaki
Hideo Kusuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP22614687A priority Critical patent/JPS6469593A/en
Publication of JPS6469593A publication Critical patent/JPS6469593A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To enable the growth of a crystal having uniform thickness over the whole substrate crystal in the epitaxial growth of a semiconductor crystal using a temperature difference process, by using a wafer slider having a specific hollow part and placing the slider below a recess for the setting of the substrate crystal of the wafer slider. CONSTITUTION:A temperature difference is applied to at least one kind of solution 1 containing dissolved raw material for growth. A substrate crystal 4 is placed on a wafer slider 10 movable linearly in one direction and is made to contact with the low-temperature side of the solution 1 and maintained in the state for a prescribed period. Epitaxial growth of a semiconductor crystal takes place on the substrate crystal 4 by this process. The apparatus is provided with the following additional parts. A recess 11 for setting the substrate crystal 4 is formed on the upper surface of the wafer slider 10. A hollow part 12 having a slightly larger cross-sectional area than the recess 11 is formed for covering the whole recess 11 and is placed under the recess 11 of the wafer slider 10.
JP22614687A 1987-09-09 1987-09-09 Apparatus for liquid epitaxial growth of semiconductor crystal Pending JPS6469593A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22614687A JPS6469593A (en) 1987-09-09 1987-09-09 Apparatus for liquid epitaxial growth of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22614687A JPS6469593A (en) 1987-09-09 1987-09-09 Apparatus for liquid epitaxial growth of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS6469593A true JPS6469593A (en) 1989-03-15

Family

ID=16840579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22614687A Pending JPS6469593A (en) 1987-09-09 1987-09-09 Apparatus for liquid epitaxial growth of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6469593A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127976U (en) * 1984-07-25 1986-02-19 株式会社ボッシュオートモーティブ システム Pulsation damping device in compressor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127976U (en) * 1984-07-25 1986-02-19 株式会社ボッシュオートモーティブ システム Pulsation damping device in compressor

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