JPS6469593A - Apparatus for liquid epitaxial growth of semiconductor crystal - Google Patents
Apparatus for liquid epitaxial growth of semiconductor crystalInfo
- Publication number
- JPS6469593A JPS6469593A JP22614687A JP22614687A JPS6469593A JP S6469593 A JPS6469593 A JP S6469593A JP 22614687 A JP22614687 A JP 22614687A JP 22614687 A JP22614687 A JP 22614687A JP S6469593 A JPS6469593 A JP S6469593A
- Authority
- JP
- Japan
- Prior art keywords
- recess
- crystal
- slider
- epitaxial growth
- substrate crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To enable the growth of a crystal having uniform thickness over the whole substrate crystal in the epitaxial growth of a semiconductor crystal using a temperature difference process, by using a wafer slider having a specific hollow part and placing the slider below a recess for the setting of the substrate crystal of the wafer slider. CONSTITUTION:A temperature difference is applied to at least one kind of solution 1 containing dissolved raw material for growth. A substrate crystal 4 is placed on a wafer slider 10 movable linearly in one direction and is made to contact with the low-temperature side of the solution 1 and maintained in the state for a prescribed period. Epitaxial growth of a semiconductor crystal takes place on the substrate crystal 4 by this process. The apparatus is provided with the following additional parts. A recess 11 for setting the substrate crystal 4 is formed on the upper surface of the wafer slider 10. A hollow part 12 having a slightly larger cross-sectional area than the recess 11 is formed for covering the whole recess 11 and is placed under the recess 11 of the wafer slider 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22614687A JPS6469593A (en) | 1987-09-09 | 1987-09-09 | Apparatus for liquid epitaxial growth of semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22614687A JPS6469593A (en) | 1987-09-09 | 1987-09-09 | Apparatus for liquid epitaxial growth of semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6469593A true JPS6469593A (en) | 1989-03-15 |
Family
ID=16840579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22614687A Pending JPS6469593A (en) | 1987-09-09 | 1987-09-09 | Apparatus for liquid epitaxial growth of semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6469593A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6127976U (en) * | 1984-07-25 | 1986-02-19 | 株式会社ボッシュオートモーティブ システム | Pulsation damping device in compressor |
-
1987
- 1987-09-09 JP JP22614687A patent/JPS6469593A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6127976U (en) * | 1984-07-25 | 1986-02-19 | 株式会社ボッシュオートモーティブ システム | Pulsation damping device in compressor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
JPS6466929A (en) | Method of forming defect-free single crystal thin layer of semiconductor material | |
JPS6469593A (en) | Apparatus for liquid epitaxial growth of semiconductor crystal | |
DE2960880D1 (en) | Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration | |
EP0226311A3 (en) | Process for annealing iii-v compound semiconductor material | |
GB1498925A (en) | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate apparatus for use in carrying out said method and semiconductor devices thus manufactured | |
JPS6466932A (en) | Epitaxial silicon wafer | |
GB2045639B (en) | Process for the production of epitaxial layers of semiconductor material on monocrystalline substrates | |
JPS5734329A (en) | Manufacture of simiconductor device | |
JPS5711898A (en) | Liquid-phase epitaxial growth | |
JPS6459851A (en) | Manufacture of soi wafer | |
JPS57196527A (en) | Method and device for growing epitaxial layer of semiconductor crystal | |
JPS53115181A (en) | Production of semiconductor device | |
JPS6448454A (en) | Manufacture of cmos integrated circuit having connecting part to substrate on upper surface | |
JPS533902A (en) | Production of silicon crystal membrane | |
JPS52115784A (en) | Liquid phase epitaxial growth | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5669821A (en) | Manufacture of semiconducting crystal | |
JPS5732650A (en) | Semiconductor device | |
JPS5364466A (en) | Semiconductor crystal growth apparatus | |
JPS6483593A (en) | Apparatus for growing semiconductor single crystal | |
JPS6452697A (en) | Production of group iii-v compound semiconductor single crystal | |
JPS6456396A (en) | Liquid phase epitaxial growth method | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS577118A (en) | Manufacture of 3-5 group mixed crystal single crystal |