JPS6456396A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS6456396A
JPS6456396A JP21314187A JP21314187A JPS6456396A JP S6456396 A JPS6456396 A JP S6456396A JP 21314187 A JP21314187 A JP 21314187A JP 21314187 A JP21314187 A JP 21314187A JP S6456396 A JPS6456396 A JP S6456396A
Authority
JP
Japan
Prior art keywords
substrates
phase epitaxial
crucible
melt
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21314187A
Other languages
Japanese (ja)
Other versions
JPH0569080B2 (en
Inventor
Takemasa Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP21314187A priority Critical patent/JPS6456396A/en
Publication of JPS6456396A publication Critical patent/JPS6456396A/en
Publication of JPH0569080B2 publication Critical patent/JPH0569080B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To grow a uniform single crystal film only on one side of each substrate when crystal growth is carried out on many substrates by a liq. phase epitaxial method, by fitting the substrates to the inner surface of the upper part of a crucible and bringing a melt in the crucible into contact with the substrates by centrifugal force. CONSTITUTION:When crystal growth is carried out on substrates by a liq. phase epitaxial method to obtain signal crystal films, the garnet substrates 4 are fitted to the inner surface of the upper part 11a of a crucible 11 and the crucible 11 contg. a melt 2 is rotated in the direction of an arrow D to bring the melt 2 into contact with the substrates 4 by centrifugal force. By this contact, single crystal films are grown on the substrates 4.
JP21314187A 1987-08-28 1987-08-28 Liquid phase epitaxial growth method Granted JPS6456396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21314187A JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21314187A JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS6456396A true JPS6456396A (en) 1989-03-03
JPH0569080B2 JPH0569080B2 (en) 1993-09-30

Family

ID=16634255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21314187A Granted JPS6456396A (en) 1987-08-28 1987-08-28 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS6456396A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186079A (en) * 1975-01-27 1976-07-28 Hitachi Ltd Ekisoseichohoho oyobi sochi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5186079A (en) * 1975-01-27 1976-07-28 Hitachi Ltd Ekisoseichohoho oyobi sochi

Also Published As

Publication number Publication date
JPH0569080B2 (en) 1993-09-30

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