JPS6456396A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS6456396A JPS6456396A JP21314187A JP21314187A JPS6456396A JP S6456396 A JPS6456396 A JP S6456396A JP 21314187 A JP21314187 A JP 21314187A JP 21314187 A JP21314187 A JP 21314187A JP S6456396 A JPS6456396 A JP S6456396A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- phase epitaxial
- crucible
- melt
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To grow a uniform single crystal film only on one side of each substrate when crystal growth is carried out on many substrates by a liq. phase epitaxial method, by fitting the substrates to the inner surface of the upper part of a crucible and bringing a melt in the crucible into contact with the substrates by centrifugal force. CONSTITUTION:When crystal growth is carried out on substrates by a liq. phase epitaxial method to obtain signal crystal films, the garnet substrates 4 are fitted to the inner surface of the upper part 11a of a crucible 11 and the crucible 11 contg. a melt 2 is rotated in the direction of an arrow D to bring the melt 2 into contact with the substrates 4 by centrifugal force. By this contact, single crystal films are grown on the substrates 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21314187A JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21314187A JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6456396A true JPS6456396A (en) | 1989-03-03 |
JPH0569080B2 JPH0569080B2 (en) | 1993-09-30 |
Family
ID=16634255
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21314187A Granted JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6456396A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186079A (en) * | 1975-01-27 | 1976-07-28 | Hitachi Ltd | Ekisoseichohoho oyobi sochi |
-
1987
- 1987-08-28 JP JP21314187A patent/JPS6456396A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186079A (en) * | 1975-01-27 | 1976-07-28 | Hitachi Ltd | Ekisoseichohoho oyobi sochi |
Also Published As
Publication number | Publication date |
---|---|
JPH0569080B2 (en) | 1993-09-30 |
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