JPH0569080B2 - - Google Patents
Info
- Publication number
- JPH0569080B2 JPH0569080B2 JP62213141A JP21314187A JPH0569080B2 JP H0569080 B2 JPH0569080 B2 JP H0569080B2 JP 62213141 A JP62213141 A JP 62213141A JP 21314187 A JP21314187 A JP 21314187A JP H0569080 B2 JPH0569080 B2 JP H0569080B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- substrate
- melt
- liquid phase
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 23
- 239000000155 melt Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000007791 liquid phase Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000002109 crystal growth method Methods 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000002223 garnet Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は結晶の成長方法に関し、特に、液相エ
ピタキシヤル法による結晶の成長方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for growing a crystal, and particularly to a method for growing a crystal by a liquid phase epitaxial method.
（従来の技術）
非磁性ガーネツト基板上に結晶を成長させる液
相エピタキシヤル法（LPE法）は、磁気光学素
子、バブル記憶素子、マイクロ波デバイス用とし
て最近注目されている。(Prior Art) The liquid phase epitaxial method (LPE method), which grows crystals on a nonmagnetic garnet substrate, has recently attracted attention for use in magneto-optical devices, bubble storage devices, and microwave devices.
これらに用いられている磁性ガーネツトを結晶
成長させる方法は、第２図に示されるように縦型
炉１（LPE炉本体）の中心部に、融液２の入つ
たるつぼ３がおかれ、白金治具５とアルミナ棒６
で保持された非磁性ガーネツト基板４をるつぼ３
に上部から挿入し、融液２の中に浸し、該基板４
を回転させることによつて結晶成長が行なわれる
ようになつている。７はヒータ、８はるつぼ支持
台である。 As shown in Fig. 2, the method of crystal-growing magnetic garnet used in these is that a crucible 3 containing melt 2 is placed in the center of a vertical furnace 1 (LPE furnace main body), and platinum is grown in a crucible 3 containing melt 2. Jig 5 and alumina rod 6
The non-magnetic garnet substrate 4 held in the crucible 3
from the top, immerse it in the melt 2, and then insert the substrate 4 from above.
Crystal growth is now performed by rotating the . 7 is a heater, and 8 is a crucible support stand.
（発明が解決しようとする問題点）
この方法によつて結晶成長を行う場合、LPE
炉の上部から挿入した非磁性ガーネツト基板４
は、第３図に示されるように白金治具５に１〜数
枚取り付けられ融液に浸される。この方法による
と多数枚の結晶育成を行う場合、基板４を融液中
に完全な浸さなければならないため、１枚の基板
４の両面に結晶成長が行なわれる。基板の両面に
結晶成長が行なわれると、融液中に含まれている
結晶成分（ガーネツト成分）の減る度合が速くな
るため、結晶成長中に、結晶成長速度が低下し、
膜厚の制御が難しくなるという欠点があつた。(Problem to be solved by the invention) When performing crystal growth by this method, LPE
Non-magnetic garnet substrate 4 inserted from the top of the furnace
As shown in FIG. 3, one to several pieces are attached to a platinum jig 5 and immersed in the melt. According to this method, when a large number of crystals are grown, the substrate 4 must be completely immersed in the melt, so crystal growth is performed on both sides of one substrate 4. When crystal growth occurs on both sides of the substrate, the crystal component (garnet component) contained in the melt decreases faster, so the crystal growth rate decreases during crystal growth.
The drawback was that it was difficult to control the film thickness.
本発明の目的は、上述した欠点を除去するため
に、１枚の基板の片面のみに結晶成長が行なわれ
るようにした液相エピタキシヤル法を提供するこ
とにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid phase epitaxial method in which crystal growth is performed only on one side of a single substrate, in order to eliminate the above-mentioned drawbacks.
（問題点を解決するための手段）
本発明によれば、るつぼ底部に融液を収容した
るつぼを用いて液相エピタキシヤル法により基板
上に単結晶膜を得る結晶成長方法において、前記
るつぼの前記るつぼ底部より上方に位置するるつ
ぼ上端部の内周面に前記基板を取り付け、前記る
つぼを回転させることにより、前記融液を遠心力
により前記るつぼ上端部の前記内周面まで移動さ
せて前記基板に接触させ、該基板上に単結晶膜を
成長させることを特徴とする液相エピタキシヤル
育成法が得られる。本発明では、多数枚の基板を
育成する場合でも、基板の片面へ均一に単結晶膜
を成長させることができる。(Means for Solving the Problems) According to the present invention, in a crystal growth method for obtaining a single crystal film on a substrate by a liquid phase epitaxial method using a crucible containing a melt at the bottom of the crucible, The substrate is attached to the inner peripheral surface of the upper end of the crucible located above the bottom of the crucible, and the crucible is rotated to move the melt to the inner peripheral surface of the upper end of the crucible by centrifugal force. A liquid phase epitaxial growth method is obtained, which is characterized by bringing the method into contact with a substrate and growing a single crystal film on the substrate. In the present invention, even when growing a large number of substrates, a single crystal film can be uniformly grown on one side of the substrate.
（実施例）
次に本発明の実施例について図面を参照して説
明する。(Example) Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明に用いる液相エピタキシヤル炉
の断面図である。 FIG. 1 is a sectional view of a liquid phase epitaxial furnace used in the present invention.
図において、７はヒータ、１０は炉心管であ
る。１１は本発明に用いられる白金るつぼであ
り、るつぼ上端部１１ａの内周面に基板４が取り
付けられる。るつぼ底部には融液２が入つてお
り、るつぼ１１を高速で回転させることにより遠
心力によつて融液２を基板４まで移動させ、基板
４上に結晶成長を行つた。この際、るつぼ１１の
回転は、回転棒１５を矢印方向Ｄに回転させるこ
とにより行なう。 In the figure, 7 is a heater and 10 is a furnace tube. Reference numeral 11 designates a platinum crucible used in the present invention, and a substrate 4 is attached to the inner circumferential surface of the upper end portion 11a of the crucible. The melt 2 was contained in the bottom of the crucible, and by rotating the crucible 11 at high speed, the melt 2 was moved to the substrate 4 by centrifugal force, and crystal growth was performed on the substrate 4. At this time, the crucible 11 is rotated by rotating the rotating rod 15 in the direction D of the arrow.
具体的には、原料のフラツクス成分として
PBO、B2O3を用い、ガーネツト成分として
Y2O3、Gd2O3、Fe2O3を用いた。基板は
Gd3Ga5O12の直径３インチ、厚さ380μｍのものを
使つた。結晶成長温度は、890℃、結晶成長速度
0.35μｍ／min、るつぼ回転速度400rpmにおいて
育成を行つた。この結果、目標とする膜厚15μｍ
を得るのに45分間で育成が終了し、計算値の時間
とほぼ同等であつた。また、片面のみに均一な膜
（±0.1μｍ）が得られた。 Specifically, as a flux component of raw materials,
Using PBO, B 2 O 3 as a garnet component
Y 2 O 3 , Gd 2 O 3 and Fe 2 O 3 were used. The board is
A Gd 3 Ga 5 O 12 material with a diameter of 3 inches and a thickness of 380 μm was used. Crystal growth temperature is 890℃, crystal growth rate
Growth was performed at 0.35 μm/min and crucible rotation speed of 400 rpm. As a result, the target film thickness was 15 μm.
It took 45 minutes to complete the cultivation, which was almost the same as the calculated time. Further, a uniform film (±0.1 μm) was obtained only on one side.
（発明の効果）
以上、説明したごとく本発明に、液相エピタキ
シヤル法により結晶成長を行う方法において、る
つぼの上端部の内周面に基板を取りつけ、るつぼ
内の融液を遠心力により前記基板に接着させるこ
とにより、多数枚の基板を育成する場合でも、基
板の片面へ均一に単結晶膜を成長させることがで
きる。(Effects of the Invention) As explained above, the present invention provides a method for crystal growth by liquid phase epitaxial method, in which a substrate is attached to the inner peripheral surface of the upper end of the crucible, and the melt in the crucible is By adhering to the substrate, even when growing a large number of substrates, a single crystal film can be uniformly grown on one side of the substrate.
更に、本願発明では、るつぼ上端部の内周面に
基板を取り付けるので、基板を取り付けるための
基板取り付け治具（第３図の５）や、該基板取り
付け治具の上下を行う機構が不要となる。又、本
願発明では、るつぼ上端部の内周面に基板を取り
付けるので、るつぼ内の融液と基板との間の温度
差が少なく、基板と融液とが接触する際の温度変
化が少なくなり、温度変化による品質の良い結晶
を得ることができる。加えて、第３図の従来例の
場合、融液は、前記基板取り付け治具にも接触す
るが、本願発明では、融液は、るつぼとしか接触
しないので、不純物の混入がない。 Furthermore, in the present invention, since the substrate is attached to the inner peripheral surface of the upper end of the crucible, there is no need for a substrate attachment jig (5 in Figure 3) for attaching the substrate or a mechanism for raising and lowering the substrate attachment jig. Become. Further, in the present invention, since the substrate is attached to the inner peripheral surface of the upper end of the crucible, there is little temperature difference between the melt in the crucible and the substrate, and there is less temperature change when the substrate and the melt come into contact. , high quality crystals can be obtained by temperature changes. In addition, in the case of the conventional example shown in FIG. 3, the melt also comes into contact with the substrate mounting jig, but in the present invention, the melt only comes into contact with the crucible, so there is no contamination of impurities.
第１図は本発明に用いる液相エピタキシヤル炉
の断面図、第２図は従来の液相エピタキシヤル炉
の断面図、第３図は従来の基板の白金治具に対す
る取り付け状態を示した図である。
１は炉本体、２は融液、３はるつぼ、４はガー
ネツト基板、５は白金治具、７はヒータ、８はる
つぼ支持台、１０は炉心管、１１はるつぼ、１５
は回転棒である。
Figure 1 is a cross-sectional view of a liquid phase epitaxial furnace used in the present invention, Figure 2 is a cross-sectional view of a conventional liquid phase epitaxial furnace, and Figure 3 is a diagram showing how a conventional substrate is attached to a platinum jig. It is. 1 is a furnace body, 2 is a melt, 3 is a crucible, 4 is a garnet substrate, 5 is a platinum jig, 7 is a heater, 8 is a crucible support stand, 10 is a furnace core tube, 11 is a crucible, 15
is a rotating rod.
Claims (1)
液相エピタキシヤル法により基板上に単結晶膜を
得る結晶成長方法において、前記るつぼの前記る
つぼ底部より上方に位置するるつぼ上端部の内周
面に前記基板を取り付け、前記るつぼを回転させ
ることにより、前記融液を遠心力により前記るつ
ぼ上端部の前記内周面まで移動させて前記基板に
接触させ、該基板上に単結晶膜を成長させること
を特徴とする液相エピタキヤル育成法。1. In a crystal growth method for obtaining a single crystal film on a substrate by a liquid phase epitaxial method using a crucible containing a melt at the bottom of the crucible, the inner peripheral surface of the upper end of the crucible located above the crucible bottom. By attaching the substrate to and rotating the crucible, the melt is moved by centrifugal force to the inner peripheral surface of the upper end of the crucible and brought into contact with the substrate, and a single crystal film is grown on the substrate. A liquid phase epitaxial growth method characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21314187A JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21314187A JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6456396A JPS6456396A (en) | 1989-03-03 |
| JPH0569080B2 true JPH0569080B2 (en) | 1993-09-30 |
Family
ID=16634255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21314187A Granted JPS6456396A (en) | 1987-08-28 | 1987-08-28 | Liquid phase epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6456396A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5186079A (en) * | 1975-01-27 | 1976-07-28 | Hitachi Ltd | Ekisoseichohoho oyobi sochi |
-
1987
- 1987-08-28 JP JP21314187A patent/JPS6456396A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5186079A (en) * | 1975-01-27 | 1976-07-28 | Hitachi Ltd | Ekisoseichohoho oyobi sochi |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6456396A (en) | 1989-03-03 |
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