JPS57196527A - Method and device for growing epitaxial layer of semiconductor crystal - Google Patents
Method and device for growing epitaxial layer of semiconductor crystalInfo
- Publication number
- JPS57196527A JPS57196527A JP8009381A JP8009381A JPS57196527A JP S57196527 A JPS57196527 A JP S57196527A JP 8009381 A JP8009381 A JP 8009381A JP 8009381 A JP8009381 A JP 8009381A JP S57196527 A JPS57196527 A JP S57196527A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- spacer
- growth
- contact
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To realize uniform epitaxial growth by making a material solution contact with a substrate from under the substrate without making the former contact with the latter when a melt drops, and by preventing thereby extraordinary growth and mixing-in of an oxide and the like. CONSTITUTION:A crystal substrate holder member 28 of a supporting body 21 is provided with a cover (x) and a spacer (y) which is designed so as to make the holder member contact with the surface and other parts of a crystal substrate at the bottom part thereof. When a pressing rod 24 is pressed, a slider 22 is moved to make one of material solutions contact with the crystal substrate 29, whereby the growth of crystals is performed. At this time, the material solution, passing through the cover (x) positioned in the upper part of the holder, further passes through the lower part of the spacer (y), enters between the spacer (y) and the crystal substate 29 and contacts with the crystal substrate 29, and thus the growth of crystals begins. By this constitution, an oxide 20 is accumulated in a solution reservoir or in the upper part of the spacer (y), not contacting with the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8009381A JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8009381A JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57196527A true JPS57196527A (en) | 1982-12-02 |
| JPH0258769B2 JPH0258769B2 (en) | 1990-12-10 |
Family
ID=13708575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8009381A Granted JPS57196527A (en) | 1981-05-28 | 1981-05-28 | Method and device for growing epitaxial layer of semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196527A (en) |
-
1981
- 1981-05-28 JP JP8009381A patent/JPS57196527A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0258769B2 (en) | 1990-12-10 |
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