TW337618B - Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC - Google Patents
Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiCInfo
- Publication number
- TW337618B TW337618B TW086102725A TW86102725A TW337618B TW 337618 B TW337618 B TW 337618B TW 086102725 A TW086102725 A TW 086102725A TW 86102725 A TW86102725 A TW 86102725A TW 337618 B TW337618 B TW 337618B
- Authority
- TW
- Taiwan
- Prior art keywords
- sic
- ohmic
- sector
- shottky
- rectifying
- Prior art date
Links
- 239000000203 mixture Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/612,216 US5929523A (en) | 1996-03-07 | 1996-03-07 | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
Publications (1)
Publication Number | Publication Date |
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TW337618B true TW337618B (en) | 1998-08-01 |
Family
ID=24452227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW086102725A TW337618B (en) | 1996-03-07 | 1997-03-06 | Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC |
Country Status (9)
Country | Link |
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US (2) | US5929523A (zh) |
EP (1) | EP0944917A1 (zh) |
JP (1) | JP2000507043A (zh) |
KR (1) | KR19990087549A (zh) |
CN (1) | CN1216635A (zh) |
AU (1) | AU2069497A (zh) |
CA (1) | CA2248803A1 (zh) |
TW (1) | TW337618B (zh) |
WO (1) | WO1997033308A1 (zh) |
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US5929523A (en) * | 1996-03-07 | 1999-07-27 | 3C Semiconductor Corporation | Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC |
US6388272B1 (en) * | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
US6027954A (en) * | 1998-05-29 | 2000-02-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Gas sensing diode and method of manufacturing |
DE19925233A1 (de) * | 1998-06-08 | 1999-12-09 | Siemens Ag | Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung |
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-
1996
- 1996-03-07 US US08/612,216 patent/US5929523A/en not_active Expired - Lifetime
-
1997
- 1997-03-04 JP JP53192997A patent/JP2000507043A/ja active Pending
- 1997-03-04 AU AU20694/97A patent/AU2069497A/en not_active Abandoned
- 1997-03-04 EP EP97908902A patent/EP0944917A1/en not_active Withdrawn
- 1997-03-04 WO PCT/US1997/003497 patent/WO1997033308A1/en not_active Application Discontinuation
- 1997-03-04 KR KR1019980706986A patent/KR19990087549A/ko not_active Application Discontinuation
- 1997-03-04 CA CA 2248803 patent/CA2248803A1/en not_active Abandoned
- 1997-03-04 CN CN97193978A patent/CN1216635A/zh active Pending
- 1997-03-06 TW TW086102725A patent/TW337618B/zh active
-
1999
- 1999-02-19 US US09/251,897 patent/US6150246A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2000507043A (ja) | 2000-06-06 |
WO1997033308A1 (en) | 1997-09-12 |
US5929523A (en) | 1999-07-27 |
EP0944917A1 (en) | 1999-09-29 |
EP0944917A4 (zh) | 1999-09-29 |
KR19990087549A (ko) | 1999-12-27 |
CN1216635A (zh) | 1999-05-12 |
AU2069497A (en) | 1997-09-22 |
CA2248803A1 (en) | 1997-09-12 |
US6150246A (en) | 2000-11-21 |
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