TW337618B - Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC - Google Patents

Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC

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Publication number
TW337618B
TW337618B TW086102725A TW86102725A TW337618B TW 337618 B TW337618 B TW 337618B TW 086102725 A TW086102725 A TW 086102725A TW 86102725 A TW86102725 A TW 86102725A TW 337618 B TW337618 B TW 337618B
Authority
TW
Taiwan
Prior art keywords
sic
ohmic
sector
shottky
rectifying
Prior art date
Application number
TW086102725A
Other languages
Chinese (zh)
Inventor
d parsons James
Original Assignee
3C Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3C Semiconductor Corp filed Critical 3C Semiconductor Corp
Application granted granted Critical
Publication of TW337618B publication Critical patent/TW337618B/en

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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Abstract

A SiC semiconductor device containing: a semiconductor base plate containing SiC with a first and a second surface comprising a sector adjacent to the first mixture sector in the first surface and a sector adjacent to the second mixture sector in the second surface; 1 first conductive layer containing Os in contact with the first surface for the formation of the first contact with an eletric interface to the first sector; and a second layer containing a metal in contact with the second surface for the formation of the second electric contact to the second mixture sector.
TW086102725A 1996-03-07 1997-03-06 Os rectifying shottky and OHMIC junction and W/WC/TiC OHMIC contacts on SiC TW337618B (en)

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US08/612,216 US5929523A (en) 1996-03-07 1996-03-07 Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC

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WO (1) WO1997033308A1 (en)

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US5929523A (en) 1999-07-27
CN1216635A (en) 1999-05-12
EP0944917A1 (en) 1999-09-29
AU2069497A (en) 1997-09-22
JP2000507043A (en) 2000-06-06
KR19990087549A (en) 1999-12-27
US6150246A (en) 2000-11-21
EP0944917A4 (en) 1999-09-29
WO1997033308A1 (en) 1997-09-12

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