CN104037075B - The carborundum back metal thickening method of high temperature resistant process - Google Patents
The carborundum back metal thickening method of high temperature resistant process Download PDFInfo
- Publication number
- CN104037075B CN104037075B CN201410259946.XA CN201410259946A CN104037075B CN 104037075 B CN104037075 B CN 104037075B CN 201410259946 A CN201410259946 A CN 201410259946A CN 104037075 B CN104037075 B CN 104037075B
- Authority
- CN
- China
- Prior art keywords
- metal
- layer
- sic wafer
- back side
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002184 metal Substances 0.000 title claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000008719 thickening Effects 0.000 title claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 238000001556 precipitation Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 8
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 238000010008 shearing Methods 0.000 claims abstract description 4
- 238000007711 solidification Methods 0.000 claims abstract description 3
- 230000008023 solidification Effects 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910005544 NiAg Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000004151 rapid thermal annealing Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 32
- 235000012431 wafers Nutrition 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 206010068052 Mosaicism Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 210000003765 sex chromosome Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention is the carborundum back metal thickening method of a kind of high temperature resistant process, and the method comprises the following steps: 1) in the evaporation of the SiC wafer back side or sputtering layer of metal, form Ohmic contact after annealing；2) evaporate in Ohmic contact overleaf or sputter one layer of barrier metal；3) at one layer of resin of the positive topcoating of SiC wafer, baking oven high-temperature baking solidification resin；4) SiC wafer front gluing protection, wet method HF is corroded, and cleans and dries；5) metal is thickeied in SiC wafer back side precipitation；6) removing photoresist scribing, chip does shearing force assessment after being sintered on carrier.Advantage: solve silicon carbide power device after high-temperature process, back metal problem loosely, by sputtering one layer of barrier metal on ohm overleaf, be combined with the C being diffused into ohmic contact surface after high-temperature process, avoid and form free C layer, it is ensured that the back side thickeies fastness and the reliability of metal.
Description
Technical field
The present invention relates to a kind of back metal thickening method, particularly relate to the carborundum back metal thickening method of a kind of high temperature resistant process.
Background technology
Carborundum (SiC) material because having big energy gap (3.2eV), high critical breakdown electric field (reaches 4 × 106More than V/cm), high electron saturation velocities (2 × 107Cm/s) and the performance such as high thermal conductivity (4.9W/cm.K), under the working condition such as high temperature, high-power, Flouride-resistani acid phesphatase, there is obvious advantage, have broad application prospects in fields such as communication, traffic, the energy.
In silicon carbide power device, generally use nickel (Ni) as metal ohmic contact, after the extension that silicon carbide wafers superficial growth one floor height is mixed, precipitation metallic nickel, through up to 1000oAfter the high annealing of C, forming good Ohmic contact, it connects ohmic contact resistance and can reach 1 Х 10-6 Ω.cm2.But, in the Ohmic contact forming process of carborundum, owing to nickel and silicon carbide reactor form nisiloy compound (NixSiy), carbon (C) will be separated out, in ohm annealing process, owing to the high annealing time is shorter, carbon is not the most diffused into surface, due to Carbon diffusion coefficient and time and temperature direct proportionality, under the higher temperatures long period, this carbon diffuses into ohmic contact surface, forms free carbon-coating, carry out metal process for upsetting the most again, the adhesiveness thickening metal can be caused the poorest.
For appeal problem, generally can remove, by wet etching and dry etching, the carbon that the back side separates out, the wherein strong acid meeting corrosion device front of wet etching, dry method carves the carborundum back side, can pollute silicon carbide wafer and etching apparatus cavity, and this two method all can damage the electrical property of silicon carbide device, and produce reliability hidden danger, therefore, need not remove carbon-coating, the carborundum back metal process for upsetting exploitation of back metal good adhesion is very important simultaneously.
Summary of the invention
The carborundum back metal thickening method of a kind of high temperature resistant process that the present invention proposes, its objective is the above-mentioned deficiency solved existing for existing technique, free carbon out after holding onto high-temperature process by the method for alloy, while not affecting device electric property, improve the silicon carbide device back side and thicken adhesiveness and the reliability of device of metal.
The technical solution of the present invention comprises the following steps:
1) in the evaporation of the SiC wafer back side or sputtering layer of metal, Ohmic contact after annealing, is formed；
2) evaporate in Ohmic contact overleaf or sputter one layer of barrier metal；
3) the positive topcoating of SiC wafer one layer for the resin of high voltage protective, solidify through baking oven high-temperature baking；
4) SiC wafer front gluing protection, wet method HF is corroded, and cleans and dries；
5) metal is thickeied in SiC wafer back side precipitation；
6) remove photoresist scribing, do shearing force assessment.
Beneficial effects of the present invention: this method solve and separated out, by carborundum back surface ohmic contacts after high-temperature process, the metal adhesion sex chromosome mosaicism that free carbon-coating causes, without the need for using wet etching or dry etch process, technique is simple, without process contamination, reduces process costs；Use the device that the carborundum back metal thickening method of this high temperature resistant process is developed, electric property and reliability good, back metal good adhesion and high temperature resistant process.
Accompanying drawing explanation
Accompanying drawing 1 is SiC disk schematic diagram.
Accompanying drawing 2 is the generalized section after Ohmic contact has been done at the SiC disk back side.
Accompanying drawing 3 is the generalized section after precipitating one layer of barrier metal on SiC disk back surface ohmic contacts.
Accompanying drawing 4 is the generalized section after one layer of resin of the positive topcoating of SiC disk.
Accompanying drawing 5 is the generalized section after the gluing protection of SiC disk front.
Accompanying drawing 6 is that back metal thickeies later generalized section.
Detailed description of the invention
The carborundum back metal thickening method of high temperature resistant process, the method comprises the following steps:
1) in the evaporation of the SiC wafer back side or sputtering layer of metal, Ohmic contact after annealing, is formed；
2) evaporate in Ohmic contact overleaf or sputter one layer of barrier metal；
3) at one layer of resin of the positive topcoating of SiC wafer, baking oven high-temperature baking solidification resin；
4) SiC wafer front gluing protection, wet method HF is corroded, and cleans and dries；
5) metal is thickeied in SiC wafer back side precipitation；
6) removing photoresist scribing, chip does shearing force assessment after being sintered on carrier.
The described Ni metal evaporated at the SiC wafer back side or sputter layer of metal 100nm, 1000oGood Ohmic contact is formed after C annealing 10min；The Ni metal of 100nm, in high temperature rapid thermal annealing, all reacts with SiC, and top layer does not has and the Ni of SiC reaction is the most dense, blocks the precipitation of carbon, so now not observing the carbon precipitation being backed with blackout, as shown in Figure 2.
Sputtering one layer of barrier metal in described Ohmic contact overleaf and include W, Ti, WTi, WiTiAuTi, thickness is 10nm～300nm, uses the mode of evaporation or sputtering to be formed, as shown in Figure 3.
Described is resin bed thick for 4 m at one layer of resin of the positive topcoating of SiC wafer, and baking oven for heating temperature is from the beginning of 25 DEG C, and multistage 2h is heated to 400 DEG C, then after 400 DEG C of constant temperature 2h, cools to room temperature；After time high-temperature process, carbon has diffused into barrier metal layer, is combined with W, Ti or its alloy, it is therefore prevented that carbon is to the diffusion of metal surface, it is to avoid form free carbon-coating on surface, and impact thickeies the adhesiveness of metal, as shown in Figure 4.
The protection of described SiC wafer front gluing, wet method HF corrodes, be quality matched proportion density be 20% HF% process 1min, as shown in Figure 5.
Described is after step 4) at SiC wafer back side precipitation thickening metal, and the thickening metal of 1 m～6 m is evaporated, sputters or electroplate at the back side, and the back side thickeies metal and includes Au, Ag, NiAu, NiAg, TiNiAu, TiNiAg；Scribing after removing photoresist, as shown in Figure 6.
Described back ohmic metal also includes Ni, Ti, Gr, Mo, W and alloy thereof, and annealing temperature is 600oC～1100oC。
Sputtering one layer of barrier metal on described back ohmic, this barrier metal includes W, Ti, WTi, WiTiAuTi, and thickness is 10nm～300nm, uses the mode of evaporation or sputtering to be formed.
Described at one layer of resin of the positive topcoating of SiC wafer, resin bed is benzocyclobutene (BCB) or polyimides, and baking oven baking temperature is 100oC～500oC, baking time is 1h～12h.
The quality matched proportion density of described HF is 5%～10%, or 30%～50%, the time of process is 10s～9min.
Claims (1)
- The carborundum back metal thickening method of the most high temperature resistant process, the method comprises the following steps:1) in the evaporation of the SiC wafer back side or sputtering layer of metal, Ohmic contact after annealing, is formed；2) evaporate in Ohmic contact overleaf or sputter one layer of barrier metal；3) at one layer of resin of the positive topcoating of SiC wafer, baking oven high-temperature baking solidification resin；4) SiC wafer front gluing protection, wet method HF is corroded, and cleans and dries；5) metal is thickeied in SiC wafer back side precipitation；6) removing photoresist scribing, chip does shearing force assessment after being sintered on carrier；The described Ni metal thick in the evaporation of the SiC wafer back side or one layer of 100nm of sputtering, 1000oGood Ohmic contact is formed after C annealing 10min；The Ni metal of 100nm, in high temperature rapid thermal annealing, all reacts with SiC, and top layer does not has and the Ni of SiC reaction is the most dense, blocks the precipitation of carbon, so now not observing the carbon precipitation being backed with blackout；Sputtering one layer of barrier metal in described Ohmic contact overleaf and include W, Ti, WTi, WiTiAuTi, thickness is 10nm～300nm, uses the mode of evaporation or sputtering to be formed；Described is resin bed thick for 4 m at one layer of resin of the positive topcoating of SiC wafer, and baking oven for heating temperature is from the beginning of 25 DEG C, and multistage 2h is heated to 400 DEG C, then after 400 DEG C of constant temperature 2h, cools to room temperature；After second time high-temperature process, carbon has diffused into barrier metal layer, is combined with W, Ti or its alloy, it is therefore prevented that carbon is to the diffusion of metal surface, it is to avoid form free carbon-coating on surface, and impact thickeies the adhesiveness of metal；The protection of described SiC wafer front gluing, wet method HF corrodes, be quality matched proportion density be 20% HF process 1min；Described is after step 4) at SiC wafer back side precipitation thickening metal, and the thickening metal of 1 m～6 m is evaporated, sputters or electroplate at the back side, and the back side thickeies metal and includes Au, Ag, NiAu, NiAg, TiNiAu, TiNiAg；Scribing after removing photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259946.XA CN104037075B (en) | 2014-06-12 | 2014-06-12 | The carborundum back metal thickening method of high temperature resistant process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410259946.XA CN104037075B (en) | 2014-06-12 | 2014-06-12 | The carborundum back metal thickening method of high temperature resistant process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104037075A CN104037075A (en) | 2014-09-10 |
| CN104037075B true CN104037075B (en) | 2017-01-04 |
Family
ID=51467802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410259946.XA Active CN104037075B (en) | 2014-06-12 | 2014-06-12 | The carborundum back metal thickening method of high temperature resistant process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104037075B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830456A (en) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | The preparation method of method and power device that the back metal of power device thickeies |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6398744B2 (en) | 2015-01-23 | 2018-10-03 | 三菱電機株式会社 | Manufacturing method of substrate for semiconductor device |
| CN107331606A (en) * | 2017-05-09 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | The preparation method of SiC device back metal system |
| CN109994376B (en) * | 2017-12-30 | 2021-10-15 | 无锡华润微电子有限公司 | Ohmic contact structure formed on silicon carbide substrate and forming method thereof |
| CN113539800B (en) * | 2021-06-10 | 2024-05-31 | 上海积塔半导体有限公司 | Method for preparing semiconductor structure |
| CN113802184B (en) * | 2021-08-25 | 2022-06-28 | 东莞市天域半导体科技有限公司 | Method for quickly removing deposits on back of wafer in silicon carbide epitaxial process |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| CN102768946A (en) * | 2012-07-05 | 2012-11-07 | 中国电子科技集团公司第五十五研究所 | Rapid annealing method for ohmic contact on back side of carborundum device |
| CN102800570A (en) * | 2011-05-27 | 2012-11-28 | 三菱电机株式会社 | Manufacturing method of silicon carbide semiconductor device |
| CN102931054A (en) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | Method for realizing annealing of P-type SiC material low-temperature ohmic alloy |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN103578960A (en) * | 2013-11-20 | 2014-02-12 | 中国科学院微电子研究所 | Method for preparing ohmic contact on back of SiC substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4699812B2 (en) * | 2005-06-07 | 2011-06-15 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| JP5401356B2 (en) * | 2010-02-09 | 2014-01-29 | 昭和電工株式会社 | Manufacturing method of semiconductor device |
-
2014
- 2014-06-12 CN CN201410259946.XA patent/CN104037075B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216635A (en) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | Os rectifying schottky and ohmic junction and W/WC/TiC ohmic contacts on sic |
| CN102800570A (en) * | 2011-05-27 | 2012-11-28 | 三菱电机株式会社 | Manufacturing method of silicon carbide semiconductor device |
| CN102522502A (en) * | 2012-01-10 | 2012-06-27 | 西安电子科技大学 | Terahertz GaN Gunn diode based on SiC substrate and manufacturing method thereof |
| CN102768946A (en) * | 2012-07-05 | 2012-11-07 | 中国电子科技集团公司第五十五研究所 | Rapid annealing method for ohmic contact on back side of carborundum device |
| CN102931054A (en) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | Method for realizing annealing of P-type SiC material low-temperature ohmic alloy |
| CN103077963A (en) * | 2013-01-07 | 2013-05-01 | 浙江大学 | Ohmic contact electrode, preparation method of ohmic contact electrode and semiconductor element comprising ohmic contact electrode |
| CN103578960A (en) * | 2013-11-20 | 2014-02-12 | 中国科学院微电子研究所 | Method for preparing ohmic contact on back of SiC substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830456A (en) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | The preparation method of method and power device that the back metal of power device thickeies |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104037075A (en) | 2014-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104037075B (en) | The carborundum back metal thickening method of high temperature resistant process | |
| CN103578960A (en) | Method for preparing ohmic contact on back of SiC substrate | |
| CN104538500B (en) | PECVD plated films and sintering process for crystal silicon solar energy battery anti-LID and PID | |
| WO2009114446A3 (en) | A solar cell and fabrication method using crystalline silicon based on lower grade feedstock materials | |
| CN101777606B (en) | Crystalline silicon solar battery selective diffusion process | |
| CN106683994B (en) | Method for manufacturing P-type silicon carbide ohmic contact | |
| WO2011157422A3 (en) | Method for producing a photovoltaic solar cell | |
| CN104201252A (en) | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method | |
| CN103606516A (en) | Low-temperature gold-free ohmic contact manufacturing method of GaN-based high-electron-mobility transistor | |
| CN108122749A (en) | A kind of SiC base GaN_HEMT back process based on graphical slide glass | |
| CN107393822A (en) | A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function | |
| JP2007194514A5 (en) | ||
| CN102376821A (en) | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell | |
| Raval et al. | Study of nickel silicide formation and associated fill-factor loss analysis for silicon solar cells with plated Ni-Cu based metallization | |
| CN102768946A (en) | Rapid annealing method for ohmic contact on back side of carborundum device | |
| CN109860334A (en) | A kind of matching HF/HNO3The high quality phosphorus diffusion method of system selective etch | |
| CN107301949A (en) | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode | |
| CN105448673A (en) | Forming method for back ohmic contact of silicon carbide device | |
| Bahk et al. | High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding | |
| CN102723268A (en) | Method for preparing self-aligned nickel-silicide | |
| CN102800587A (en) | Process for producing schottky diode | |
| CN102660775A (en) | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing | |
| CN102427027A (en) | Process method for improving thermal stability of semiconductor autocollimation nickel silicide | |
| CN106328776B (en) | A kind of preparation method of vertical structure purple LED chip | |
| CN105244267B (en) | A kind of Ohmic contact method of silicon carbide PiN device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |