TW311269B - - Google Patents

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Publication number
TW311269B
TW311269B TW085102976A TW85102976A TW311269B TW 311269 B TW311269 B TW 311269B TW 085102976 A TW085102976 A TW 085102976A TW 85102976 A TW85102976 A TW 85102976A TW 311269 B TW311269 B TW 311269B
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TW
Taiwan
Prior art keywords
semiconductor
patent application
gold
metal layer
making
Prior art date
Application number
TW085102976A
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English (en)
Original Assignee
Siemens Ag
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Publication date
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Publication of TW311269B publication Critical patent/TW311269B/zh

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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/50—Photovoltaic [PV] energy

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Description

311269 A7 B7 五、發明説明（'） 本發明係闉於一種半導體組件，其中塑膠封裝至少以 一接觸層和半導體本體相鄹接。 一種這樣的半専體組件例如可由DE43 27 1 33Α1中得 知。其中描寫一種半導體組件，有一發光二極體經由透 明之塑膠封裝和光偵测半導體晶片作光學耦合。此透明 之塑膠封裝直接塗在發光二極體之半導體本體表面以及 光偵測半導體晶片之表面。 習知塑膠封裝之热膨脹係數，例如環氧樹脂，Μ及半 導體材料之熱膨隈係數都不一樣（ath (環氧樹腊=60-20 O'" 1〇~6 K"1 , a th (砷化錠）=6*10_61(_1 , octh (矽）=2. 5* ιο-^Γ1)在半導體組件一般操作中所產生之溫度波動中 ，因此會在半導體組件内產生機械應力。在時間進行遇 程中，經由此種櫬械應力和相闞連之剪力作用在介於半 導體本體和塱膠封裝之間的邊界面上可使塑膠封裝由半 導體本體溶化。可是塱膠封裝之溶解在大部份情況下會 對半導體組件之功能性霣造成重大之損害。所Μ例如在 半導體組件傳送及/或接收光學信號時，會造成封裝由 半導體本體溶化而產生巨大的光損耗。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 因此提高半導體本體和塑膠封裝之間的黏著力是一種 必要的措施。習知之各種提高半導體本體和塱膠封裝之 間的黏著力的方式為： -塱謬封裝材料之熱膨脹係數的調整， -半導體表面之活化，例如利用電漿清洗， -介於半導體表面和塱膠封裝之間的中間曆， -3- 本紙張尺度適用中國國家標率（CNS ) Α4規格（210Χ297公釐） 311269 五、發明説明（ A7
經濟部中央標準局員工消費合作社印製 習知之 數的班當 之填料是 酸鹽。由 膠封裝材 影響之情 半導體 入中間層 用費用高 因此本 體本體和 中之任一 此種目 觸金鼷層 本體和塑 利用此 表面所郾 力有效分 導體本體 少 Ο 本發明 第1圖 之横切面 在系铳 塱膠封 調整迄 金覉粉 於此種 料之透 況才有 表面之 作為粘 之方法 發明之 塱膠封 種。 的之解 覆蓋之 膠封裝 種撤接 接之面 佈在半 和塑膠 裝材料 今仍只 末，金 填料除 光度， 可能。 活化成 著調整 步驟。 目的為 裝之間 ，例如， 能利用附 靥氧化物 了損害热 填料之使 在半専體 劑則具有 環氧樹脂，之热蟛脹係 加之填料來完成。習知 ,金鼸碳酸鹽和金羼矽 睡脹係數外，亦損窖塱 用只在其性質沒有重要 表面和塑膠封裝之間加 之缺點為，必須另外使 發展一種半導體姐件，其在半専 具有高的黏著力而不需上述方法 決方式為，半導體本體表面至少未受接 空著的部份區域具有粗糙狀，使半導體 之間形成一種撤接合。 合，一方面在塱膠封裝上之半導體本體 會被擴大，另方面此種微接合使機械應 導體本體內部和封裝中。此二因素使半 封裝之間的接觸面上的剪力作有利的減 將依據實施例和圔式作詳细說明。圖式簡單說明如下： 顯示本發明之半導體姐件，例如發光二極體， 〇 載體之連接指1上，配置半導體本體2 ,其上 -4- 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨Ο X 297公釐） I— 1111 11 I n n I 訂 II n |太 (請先閲讀背面之注意事項再填寫本頁) A7 311269 B7 五、發明説明（4 ) 端和其下端各有一接觸金靨暦3, 4。半導體本體2例如 (請先閱讀背面之注意事項再填寫本頁) 可由AlxGai_xAS , InxGai_ Ae, Si或SiC構成。接觸金鼷 層3, 4可由鋁，以鋁為主之合金或其它不貴重之金_材 料構成。半導體本體2在未設有接觸金臞曆3, 4之表面 上具有微接合结構5 ,其可例如由蝕刻來製造。接觸金 鼸暦3例如可利用鉛/錫焊_和連接指1作電性連接。 接觸金靨層4可利用連结線6 ,例如金線，和連接指7 作電性連接。半導體本體2,接觸金鼸暦3, 4,逋结線6 和連接指1, 7之部份區域K 一種透明之塱膠封裝8 ,例 如由環氧樹脂所構成者，加Μ封閉。 利用微接合结構5 ,由於介於半導體本《2和塱膠封 裝8之間的界限上減少之全反射損耗，在發光半導體本 體2及/或吸收光線之半導體本體2之情況時。除了可 改進半導«本體2上之塑膠封裝8之黏著力之外，亦可 改進入射光及/或射出光之耩合。 一種製造上述半導體元件之方法具有例如下列連鑛之 步驟： a) 半導《本《2之製造，例如發光二極體或光二檯艚； b) 接觸金靨層3, 4之製造，例如利用濺鍍； 經濟部中央標準局員工消費合作社印製 c) 撤接合结構5之製造，例如利用半導體本體2表面 之蝕刻； d) 半導體本體2和接觸金靨層3，4K及撤接合结構5 — 起安裝在連接指1之上或系統載體之突出部上，例如利 用黏合或焊接； -5-本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐） 3x1269 A7 B7 五、發明説明（4 ) e) 將連接導線b連结在接觸金臑層4和連接指7之上；
f) Μ微接合结構5 ，連接導線6之接觸金牖曆3, 4M 及連接指1, 7之部份區域利用塑膠將半導體本體2封裝 。依下述方式進行塑膠封裝，即，塑膠填入微接合结構 5中，將其填滿且至最後硬化為止，由此可形成介於半 導體本體2和塑膠封裝8之間的微接合。例如，可使用 一種噴灑一加壓法作為封裝方法。 一種在半導體本體2上利用一層或多層AlxGai_xAS層 (0彡X；g〇)以製造微接合結構5之方法，例如，具有Μ 下之連續步驟，其中半導體本體2上具有由非貴重金鼸 材料，例如鋁或Μ鋁為主之合金，所構成之金鼸接觸層 3 , 4 : a) 預先濟洗半導體本體2之表面以製造吸水性之半導 體表面，可Μ利用商用之清潔劑清洗； b) 例如以硝酸（655Π蝕刻半導體本體2之表面。每次 必須依據鋁含量X而對蝕刻作溫度和蝕刻期間之調整。 就鋁之含量為0.30盔Χέ0.40而言，在溫度為25±5C時 之蝕刻期間例如可為15至30秒。 經濟部中央標準局員工消費合作社印製 (請克閱讀背雨之注意事項再填寫本頁) 另一種在半導體本體2上製造具有一層或多暦AlxGai_xAs 層 （Ο^Χ各0.4)之撤接合结構5之方法包含例如Μ下 之連鑛步驟，其中半導體本體2上具有由非貴重金麗材 料，例如鋁或Μ鋁為主之合金，所構成之金腦接觸靨3, 4 ： a)半導體本體2之製造； -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 五、發明説明（f ) b) 接觸金騙層3, 4之塗層； c) 預先清洗半導體表面Μ製一種吸水性之半導體面， 例如可利用水沖洗，亦可能加入清潔劑； <1)以過氧化水（230Χ)和氪氟酸（240»：)(10〇〇:6)組成之 蝕刻混合物進行粗糖蝕刻約一分鐘至2.5分鐘； e)M稀釋之礦酸，例如磙酸（15 3!),在35C進行後段 蝕刻趵1分鐘至2分鐮。 每次必須依據鋁含量X而對粗糙蝕刻作溫度和蝕刻期 間之調整。 ^^^^1 ^^^1· ^ϋ·— Bn ^/1 I ^^^^1 m^i i n^ii ^i^BB 一妒 ^¾. 、ve (請先.閱讀背询之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）

Claims (1)

  1. Ul26d A8 68 C8 D8 六、申請專利範圍 第85 1 0 297 6號「具有塑膠封套之半導體組件及製造該半 導體組件之方法」專利案 （86年4月修正） 杰申請專利範圍 1. 一種半導體組件，在其上有一塑膠封裝以至少一接觸 金屬層鄰接於半導髏本體上，其特徵為，半導體本體 (2)之表面至少有一未受接觸金屬層（3)覆蓋之空著的 部份區域具有粗糙面，使微接合形成在半導體本體（2) 和塑膠封裝（8 )之間。 2. 如申請專利範圍第1項之半導體組件，其中接觸金屬 層（3)具有鋁。 3. 如申請專利範圍第1項之半導體組件，其中接觸金靥 層（3)由以鋁為主之合金所構成。 4. 如申請專利範圍第2項之半導體組件，其中接觸金屬 層（3)由以鋁為主之合金所構成。 5. —種製造半導體組件之方法，係用於製造申請專利範 圍第1至第4項中任一項之半導體組件，其特徽為包 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 層 颶 金 觸 接 有 具 裝 安 :(2(3體上 驟體層本體 步本屬體載 之體金導統 述導觸半条(5 下半接在在構 含 <〇 b c d Sfi 構 結 合 接 徹 造 製 β5- ; 上 ; 造面 造製表 製之之 之 4 2 合 接 徹 和 體 本 SM AH 導 半 之 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 311263 A8 B8 C8 D8 7、申請專利範圍 e) 在接觸金屬層（3)和条統載體之連接指（1,7)上連結 一個或多値連接導線； f) 以塑膠封裝半導髏本體（2),接觸金羼層（3, 4)，連 接導線，連接指（1,7)之部份區域以及条統載體之 至少一部份區域，使塑膠填入黴接合結構（5 )中，將 其填滿且最後硬化為止。 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）
TW085102976A 1995-03-15 1996-03-12 TW311269B (zh)

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CN1280900C (zh) 2006-10-18
CN1138216A (zh) 1996-12-18
JP2930904B2 (ja) 1999-08-09
US5742098A (en) 1998-04-21
EP0732740A2 (de) 1996-09-18
EP0732740A3 (de) 1998-09-16
CN1905169A (zh) 2007-01-31
DE19509262A1 (de) 1996-09-19
JPH08264683A (ja) 1996-10-11
DE19509262C2 (de) 2001-11-29

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