CN1905169A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1905169A
CN1905169A CNA2006101215148A CN200610121514A CN1905169A CN 1905169 A CN1905169 A CN 1905169A CN A2006101215148 A CNA2006101215148 A CN A2006101215148A CN 200610121514 A CN200610121514 A CN 200610121514A CN 1905169 A CN1905169 A CN 1905169A
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China
Prior art keywords
semiconductor chip
contacting metal
semiconductor
semiconductor device
plastic package
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CNA2006101215148A
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English (en)
Inventor
H·布伦纳
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Patra Patent Treuhand
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Siemens AG
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Publication of CN1905169A publication Critical patent/CN1905169A/zh
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Abstract

半导体器件，具有一半导体基片，该半导体基片的至少部分表面与塑料封装邻接。半导体基片的表面和塑料封装间的接触面为微型齿合结构。

Description

半导体器件及其制造方法
本发明申请是申请日为1996年3月15日、申请号为96108017.5的同名专利申请的一个分案申请。
技术领域
本发明涉及一种半导体器件，在该器件中塑料封装与带有至少一个接触金属的半导体基片邻接。
背景技术
对这种半导体器件，正如在DE 43 27 133A1中所记载的。在该文献中表述了一种半导体器件，在该器件中，发光二极管通过透明的塑料封装与光检测半导体芯片光耦合。透明的塑料封装直接附着在发光二极管半导体基片和光检测半导体芯片的表面上。
已知的诸如环氧树脂等封装材料和半导体材料的热膨胀系数是完全不同的(αth(环氧树脂)＝60-200×10-6K-1，αth(砷化镓)＝6×10-6K-1，αth(硅)＝2.5×10-6K-1)。由于通常在半导体器件工作时会出现温度变化，故在半导体器件上将产生机械应力。随着时间的推移，此机械应力和与此相联系的在半导体基片与塑料封装间的临界面上的剪切力将导致塑料封装在半导体基片上的松脱。而且塑料封装的松脱在大多数情况下半引起对将导体器件的工作特性产生明显的不利影响。因此例如在一个用于发送和/或接收光信号的半导体器件中，封装从半导体基片上的松脱将导致显著的光损耗。
所以必须采取措施提高半导体基片与塑料封装间的附着强度。提高半导体基片与塑料封装间的附着强度的已知措施是：
·进行塑料封装材料热膨胀系数的适配，
·对半导体表面的活化，例如通过等离子净化的方法，
·建立半导体表面与塑料封装间的中间层。
迄今仅能通过添加填料实现对诸如环氧树脂等已知的塑料封装材料的热膨胀系数的相应适配。已知的填料是金属粉末、金属氧化物、金属碳酸盐和金属硅。鉴于这类填料除热胀系数外，还将对塑料封装材料透光性产生不利的影响，所以只能在此特性不起主要作用的情况下采用填料。
对半导体表面的活化或置入一作为将半导体表面与塑料封装间的附着媒介的中间层也伴随着如下缺点，对此必须采取附加的、费用昂贵的工艺步骤。
发明内容
故本发明的任务在于，提出一种半导体器件，该器件在半导体基片与塑料封装间具有很高的附着强度，而不必采取上述的任何一项措施。
本发明任务通过如下方法得以解决，至少一未由接触金属覆盖的半导体基片表面的自由的部分范围具有刻痕，因而形成半导体基片与塑料封装间的微型啮合。
根据本发明的一种半导体器件，在该器件中塑料封装与带有至少一接触金属的半导体基片邻接，其特征在于，至少在未被接触金属覆盖的接触金属一侧的半导体基片表面的自由部分区域上具有粗糙面，因而形成半导体基片与塑料封装间的微型啮合。
根据本发明的一种用于制造半导体器件的方法，其特征在于下述方法步骤：a)制成半导体基片；b)制成接触金属；c)在半导体基片表面制备微齿结构(5)；d)将具有接触金属和微齿结构的半导体基片安装在结构支架上；e)将一根或多根端子板接在接触金属和结构支架的指形连接端子上；f)用塑料对半导体基片、接触金属、连接线、指形连接端子的部分区域和至少结构支架的部分区域进行封装，该封装应使塑料渗透到微齿结构内、充满该微齿结构，并接着硬化。
通过微型啮合，一方面增大了半导体基片与塑料封装邻接的面积，另一方面该微型啮合促使机械应力分布到半导体基片和塑料封装的内部。这两个因素促使在半导体基片和塑料封装间的接触面上的剪切力得到了有益的减小。
附图说明
图1示出本发明的半导体器件的截面。
具体实施方式
下面将借助实施例对照附图对本发明做进一步的说明。
图1示出本发明的半导体器件，例如发光二极管的截面。
在结构支架的指形连接端子1上设置有一个具有分别位于其下侧和上侧的接触金属3、4的半导体基片2。半导体基片2例如可以由AlxGa1-xAs、InxGa1-xAs、Si或SiC构成。接触金属3、4可以由铝、铝基合金或其它的非贵金属材料制成。半导体基片2在没有接触金属3、4的表面具有微齿结构5，该微齿结构例如可以采用蚀刻方法制成。接触金属3可以通过如Pb/Sn焊料与指形连接端子1导电连接，接触金属4可通过焊接线6如金丝的方法与指形连接端子7电连接。半导体基片2、接触金属3、4焊接线6和指形连接端子1、7的部分区域被透明的塑料封装8而封装，例如由环氧树脂。
通过微齿结构5，除了由于降低了半导体基片2与塑料封装8间的界面上的总反射损耗而改善光发送和/或接收情况下的半导体基片2上的塑料封装8的附着强度，而且还改善了光输入耦合和/或输出耦合。
制造上述半导体器件的方法可按如下顺序步骤：
a)制成半导体基片2，例如发光二极管或光电二极管；
b)制成接触金属3、4，例如采用蒸发方法，
c)制备微齿结构5，例如采用对半导体基片2的表面蚀刻的方法；
d)将带有接触金属3、4和微齿结构5的半导体基片2安装在指形连接端子1上或安装在系统支架的岛上，例如通过粘接或钎焊；
e)将焊接线6焊接在接触金属4和指形连接端子7上；
f)用塑料对带有微齿结构的半导体基片2、接触金属3、4、焊接线6和指形连接端子1、7的部分区域进行封装。采用塑料进行的封装应使塑料渗透入微齿结构5内、并充满该微齿结构及接着硬化。这样在半导体基片2和塑料封装8间就形成微型啮合。例如可以采用注塑法作为封装方法。
一种，例如在由一层或多层AlxGa1-xAs(0≤X≤1)构成的并带有由非贵金属材料如铝或铝基合金制成的接触金属3、4的半导体基片2上制备微齿结构5的方法，具有如下顺序步骤：
a)预净化半导体2的表面以建立亲水的半导体表面，根据情况可采用常用的市售表面活性剂；
b)采用如硝酸(65％)蚀刻半导体2的表面，按铝含量X，经调整蚀刻温度和时间，如对于铝含量为0.30≤X≤0.40时，在温度为25±5℃时蚀刻持续15至30秒。
另一种在如具有一层或多层AlxGa1-xAs(0≤X≤0，4)并具有接触金属3，4的半导体基片2上制成微齿结构5的方法，其接触金属为非贵金属材料如铝或铝基合金，其方法具有如下步骤：
a)制备半导体基片2；
b)将接触金属3、4附着在基片上；
c)预净化半导体表面以制备亲水的半导体表面，例如采用水冲洗，视情况采用去垢剂；
d)用由水过氧化物(≥30％)和氢氟酸(≥40％)的腐蚀混合剂(1000∶6)进行1至2.5分钟的刻痕蚀刻；
e)用稀释的无机酸，例如硫酸(15％)，在35℃的情况下进行1至2分钟的后腐蚀。
视铝含量x的不同，必须相应调整刻痕蚀刻时的温度和蚀刻时间。

Claims (4)

1.半导体器件，在该器件中塑料封装与带有至少一接触金属的半导体基片邻接，其特征在于，至少在未被接触金属(3)覆盖的接触金属一侧的半导体基片(2)表面的自由部分区域上具有粗糙面，因而形成半导体基片(2)与塑料封装(8)间的微型啮合。
2.按照权利要求1的半导体器件，其特征在于：接触金属(3)具有铝。
3.按照权利要求1的半导体器件，其特征在于：接触金属(3)由铝基合金构成。
4.用于制造按照权利要求1至3中的任何一项的半导体器件的方法，其特征在于下述方法步骤：
a)制成半导体基片(2)；
b)制成接触金属(3、4)；
c)在半导体基片(2)表面制备微齿结构(5)；
d)将具有接触金属(3、4)和微齿结构(5)的半导体基片(2)安装在结构支架上；
e)将一根或多根端子板接在接触金属(3)和结构支架的指形连接端子(1、7)上；
f)用塑料对半导体基片(2)、接触金属(3、4)、连接线、指形连接端子(1、7)的部分区域和至少结构支架的部分区域进行封装，该封装应使塑料渗透到微齿结构(5)内、充满该微齿结构，并接着硬化。
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EP0732740A3 (de) 1998-09-16
TW311269B (zh) 1997-07-21
DE19509262A1 (de) 1996-09-19
JPH08264683A (ja) 1996-10-11
DE19509262C2 (de) 2001-11-29

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