TW297167B - - Google Patents

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Publication number
TW297167B
TW297167B TW085100723A TW85100723A TW297167B TW 297167 B TW297167 B TW 297167B TW 085100723 A TW085100723 A TW 085100723A TW 85100723 A TW85100723 A TW 85100723A TW 297167 B TW297167 B TW 297167B
Authority
TW
Taiwan
Prior art keywords
film
aluminum film
substrate
solar cell
aluminum
Prior art date
Application number
TW085100723A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuyuki Arai
Original Assignee
Handotai Energy Kenkyusho Kk
Nippon Todenka Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk, Nippon Todenka Co Ltd filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW297167B publication Critical patent/TW297167B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
TW085100723A 1995-01-09 1996-01-22 TW297167B (en:Method)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1754995 1995-01-09
JP17673195 1995-06-19
JP25200495A JP3792281B2 (ja) 1995-01-09 1995-09-05 太陽電池

Publications (1)

Publication Number Publication Date
TW297167B true TW297167B (en:Method) 1997-02-01

Family

ID=27281880

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100723A TW297167B (en:Method) 1995-01-09 1996-01-22

Country Status (3)

Country Link
US (2) US5711824A (en:Method)
JP (1) JP3792281B2 (en:Method)
TW (1) TW297167B (en:Method)

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US6339013B1 (en) * 1997-05-13 2002-01-15 The Board Of Trustees Of The University Of Arkansas Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
JP4294745B2 (ja) 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US5994219A (en) * 1998-06-04 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Add one process step to control the SI distribution of Alsicu to improved metal residue process window
JP2000294818A (ja) * 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
JP3619053B2 (ja) * 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
JP4472073B2 (ja) 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
EP1096577B9 (en) * 1999-10-27 2016-06-01 Kaneka Corporation Method of producing a thin-film photovoltaic device
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6724150B2 (en) * 2001-02-01 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2002329576A (ja) 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7259085B2 (en) * 2001-12-03 2007-08-21 Nippon Sheet Glass Company, Limited Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
WO2004025747A2 (de) * 2002-09-05 2004-03-25 Konarka Technologies, Inc. Organisches photovoltaisches bauelement und herstellungsverfahren dazu
DE10326546A1 (de) * 2003-06-12 2005-01-05 Siemens Ag Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften
CA2563418A1 (en) * 2004-04-15 2005-11-03 Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
KR101042959B1 (ko) * 2004-06-03 2011-06-20 삼성에스디아이 주식회사 태양전지 및 그 제조방법
GB0423581D0 (en) * 2004-10-25 2004-11-24 Andor Technology Ltd A photodetector
JP4948778B2 (ja) * 2005-03-30 2012-06-06 Ｔｄｋ株式会社 太陽電池およびその色調整方法
JP2009502027A (ja) * 2005-07-15 2009-01-22 コナルカ テクノロジーズ インコーポレイテッド 回折用フォイル
KR100728194B1 (ko) * 2005-11-11 2007-06-13 삼성에스디아이 주식회사 염료 감응형 태양 전지 및 이의 제조 방법
US7846750B2 (en) * 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
JP2009135337A (ja) * 2007-11-30 2009-06-18 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法
US20090145478A1 (en) * 2007-12-07 2009-06-11 Sharp Kabushiki Kaisha Surface protective sheet for solar cell and solar cell module
WO2009111790A1 (en) * 2008-03-07 2009-09-11 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
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JP5278824B2 (ja) * 2008-07-28 2013-09-04 日立金属株式会社 光散乱膜および光散乱膜の製造方法
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JP5315228B2 (ja) * 2009-12-25 2013-10-16 株式会社半導体エネルギー研究所 成膜装置及び太陽電池の作製方法
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JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池

Also Published As

Publication number Publication date
JPH0969642A (ja) 1997-03-11
JP3792281B2 (ja) 2006-07-05
US5891264A (en) 1999-04-06
US5711824A (en) 1998-01-27

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