JP3792281B2 - 太陽電池 - Google Patents

太陽電池 Download PDF

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Publication number
JP3792281B2
JP3792281B2 JP25200495A JP25200495A JP3792281B2 JP 3792281 B2 JP3792281 B2 JP 3792281B2 JP 25200495 A JP25200495 A JP 25200495A JP 25200495 A JP25200495 A JP 25200495A JP 3792281 B2 JP3792281 B2 JP 3792281B2
Authority
JP
Japan
Prior art keywords
film
solar cell
aluminum film
substrate
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25200495A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0969642A (ja
Inventor
久人 篠原
久雄 師岡
泉 池尾
朱美 竹之内
節男 中嶋
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, TDK Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP25200495A priority Critical patent/JP3792281B2/ja
Priority to US08/579,481 priority patent/US5711824A/en
Priority to TW085100723A priority patent/TW297167B/zh
Publication of JPH0969642A publication Critical patent/JPH0969642A/ja
Priority to US08/956,593 priority patent/US5891264A/en
Application granted granted Critical
Publication of JP3792281B2 publication Critical patent/JP3792281B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP25200495A 1995-01-09 1995-09-05 太陽電池 Expired - Fee Related JP3792281B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP25200495A JP3792281B2 (ja) 1995-01-09 1995-09-05 太陽電池
US08/579,481 US5711824A (en) 1995-01-09 1995-12-27 Solar cell
TW085100723A TW297167B (en:Method) 1995-01-09 1996-01-22
US08/956,593 US5891264A (en) 1995-01-09 1997-10-23 Solar cell and method for producing electrode for solar cell

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP1754995 1995-01-09
JP17673195 1995-06-19
JP7-176731 1995-06-19
JP7-17549 1995-06-19
JP25200495A JP3792281B2 (ja) 1995-01-09 1995-09-05 太陽電池

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP30036298A Division JP3272682B2 (ja) 1995-01-09 1998-10-06 太陽電池

Publications (2)

Publication Number Publication Date
JPH0969642A JPH0969642A (ja) 1997-03-11
JP3792281B2 true JP3792281B2 (ja) 2006-07-05

Family

ID=27281880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25200495A Expired - Fee Related JP3792281B2 (ja) 1995-01-09 1995-09-05 太陽電池

Country Status (3)

Country Link
US (2) US5711824A (en:Method)
JP (1) JP3792281B2 (en:Method)
TW (1) TW297167B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119174A1 (ja) 2008-03-26 2009-10-01 日本合成化学工業株式会社 太陽電池用基板及び太陽電池

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JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池
US6339013B1 (en) * 1997-05-13 2002-01-15 The Board Of Trustees Of The University Of Arkansas Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells
JP4294745B2 (ja) 1997-09-26 2009-07-15 株式会社半導体エネルギー研究所 光電変換装置の作製方法
US6222117B1 (en) * 1998-01-05 2001-04-24 Canon Kabushiki Kaisha Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US5994219A (en) * 1998-06-04 1999-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Add one process step to control the SI distribution of Alsicu to improved metal residue process window
JP2000294818A (ja) * 1999-04-05 2000-10-20 Sony Corp 薄膜半導体素子およびその製造方法
JP3619053B2 (ja) * 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
JP4472073B2 (ja) 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
EP1096577B9 (en) * 1999-10-27 2016-06-01 Kaneka Corporation Method of producing a thin-film photovoltaic device
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
US6724150B2 (en) * 2001-02-01 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2002329576A (ja) 2001-04-27 2002-11-15 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
US7259085B2 (en) * 2001-12-03 2007-08-21 Nippon Sheet Glass Company, Limited Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
WO2004025747A2 (de) * 2002-09-05 2004-03-25 Konarka Technologies, Inc. Organisches photovoltaisches bauelement und herstellungsverfahren dazu
DE10326546A1 (de) * 2003-06-12 2005-01-05 Siemens Ag Organische Solarzelle mit einer Zwischenschicht mit asymmetrischen Transporteigenschaften
CA2563418A1 (en) * 2004-04-15 2005-11-03 Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
KR101042959B1 (ko) * 2004-06-03 2011-06-20 삼성에스디아이 주식회사 태양전지 및 그 제조방법
GB0423581D0 (en) * 2004-10-25 2004-11-24 Andor Technology Ltd A photodetector
JP4948778B2 (ja) * 2005-03-30 2012-06-06 Ｔｄｋ株式会社 太陽電池およびその色調整方法
JP2009502027A (ja) * 2005-07-15 2009-01-22 コナルカ テクノロジーズ インコーポレイテッド 回折用フォイル
KR100728194B1 (ko) * 2005-11-11 2007-06-13 삼성에스디아이 주식회사 염료 감응형 태양 전지 및 이의 제조 방법
US7846750B2 (en) * 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
JP2009135337A (ja) * 2007-11-30 2009-06-18 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の積層構造、ｃｉｓ系薄膜太陽電池の集積構造及び製造方法
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WO2009111790A1 (en) * 2008-03-07 2009-09-11 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP4418500B2 (ja) * 2008-03-28 2010-02-17 三菱重工業株式会社 光電変換装置及びその製造方法
US20090260678A1 (en) * 2008-04-16 2009-10-22 Agc Flat Glass Europe S.A. Glass substrate bearing an electrode
JP5278824B2 (ja) * 2008-07-28 2013-09-04 日立金属株式会社 光散乱膜および光散乱膜の製造方法
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KR101133058B1 (ko) * 2008-12-19 2012-04-04 (주)엘지하우시스 태양전지 모듈
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US20110041910A1 (en) * 2009-08-18 2011-02-24 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5315228B2 (ja) * 2009-12-25 2013-10-16 株式会社半導体エネルギー研究所 成膜装置及び太陽電池の作製方法
EP2352042B1 (en) * 2010-01-29 2017-05-17 Dexerials Corporation Optical element and method for manufacturing the same
US9397240B2 (en) * 2010-12-09 2016-07-19 Ppg Industries Ohio, Inc. Corrosion resistant solar mirror
CN103299433A (zh) * 2011-01-12 2013-09-11 株式会社新王材料 太阳能电池用金属基板和太阳能电池用金属基板的制造方法
JP2012244119A (ja) * 2011-05-24 2012-12-10 Jx Nippon Oil & Energy Corp 光電変換素子
FR2976127B1 (fr) * 2011-06-01 2014-01-10 Commissariat Energie Atomique Composant organique a electrodes ayant un agencement et une forme ameliores
US20120312349A1 (en) * 2011-06-09 2012-12-13 Arkadiy Farberov Stationary concentrated solar power module
JP5917082B2 (ja) * 2011-10-20 2016-05-11 株式会社半導体エネルギー研究所 光電変換装置の作製方法
KR101387918B1 (ko) * 2012-04-30 2014-04-23 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조 방법
US9991463B2 (en) * 2012-06-14 2018-06-05 Universal Display Corporation Electronic devices with improved shelf lives
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JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
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JP3792281B2 (ja) * 1995-01-09 2006-07-05 株式会社半導体エネルギー研究所 太陽電池

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119174A1 (ja) 2008-03-26 2009-10-01 日本合成化学工業株式会社 太陽電池用基板及び太陽電池

Also Published As

Publication number Publication date
JPH0969642A (ja) 1997-03-11
US5891264A (en) 1999-04-06
TW297167B (en:Method) 1997-02-01
US5711824A (en) 1998-01-27

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