TW295696B - - Google Patents

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Publication number
TW295696B
TW295696B TW084113611A TW84113611A TW295696B TW 295696 B TW295696 B TW 295696B TW 084113611 A TW084113611 A TW 084113611A TW 84113611 A TW84113611 A TW 84113611A TW 295696 B TW295696 B TW 295696B
Authority
TW
Taiwan
Prior art keywords
layer
item
patent application
dielectric
silicon
Prior art date
Application number
TW084113611A
Other languages
English (en)
Chinese (zh)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW295696B publication Critical patent/TW295696B/zh

Links

Classifications

    • H10P14/6925—
    • H10P14/6342—
    • H10W20/071—
    • H10P14/6336—
    • H10P14/662—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6922—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW084113611A 1994-12-20 1995-12-20 TW295696B (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/359,784 US5607773A (en) 1994-12-20 1994-12-20 Method of forming a multilevel dielectric

Publications (1)

Publication Number Publication Date
TW295696B true TW295696B (cg-RX-API-DMAC10.html) 1997-01-11

Family

ID=23415255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113611A TW295696B (cg-RX-API-DMAC10.html) 1994-12-20 1995-12-20

Country Status (4)

Country Link
US (1) US5607773A (cg-RX-API-DMAC10.html)
JP (1) JPH08255834A (cg-RX-API-DMAC10.html)
KR (1) KR100372216B1 (cg-RX-API-DMAC10.html)
TW (1) TW295696B (cg-RX-API-DMAC10.html)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
JPH10163192A (ja) * 1996-10-03 1998-06-19 Fujitsu Ltd 半導体装置およびその製造方法
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
US6030706A (en) * 1996-11-08 2000-02-29 Texas Instruments Incorporated Integrated circuit insulator and method
US5854503A (en) * 1996-11-19 1998-12-29 Integrated Device Technology, Inc. Maximization of low dielectric constant material between interconnect traces of a semiconductor circuit
JP3109449B2 (ja) * 1997-04-25 2000-11-13 日本電気株式会社 多層配線構造の形成方法
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
TW392288B (en) * 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
GB2330001B (en) * 1997-10-06 1999-09-01 United Microelectronics Corp Method of forming an integrated circuit device
TW354417B (en) * 1997-10-18 1999-03-11 United Microelectronics Corp A method for forming a planarized dielectric layer
US5888898A (en) * 1997-10-23 1999-03-30 Advanced Micro Devices, Inc. HSQ baking for reduced dielectric constant
US6087724A (en) * 1997-12-18 2000-07-11 Advanced Micro Devices, Inc. HSQ with high plasma etching resistance surface for borderless vias
US6083850A (en) * 1997-12-18 2000-07-04 Advanced Micro Devices, Inc. HSQ dielectric interlayer
US5958798A (en) * 1997-12-18 1999-09-28 Advanced Micro Devices, Inc. Borderless vias without degradation of HSQ gap fill layers
KR100476371B1 (ko) * 1997-12-30 2005-07-05 주식회사 하이닉스반도체 금속층간의평탄화절연막형성방법
KR100448245B1 (ko) * 1997-12-30 2004-11-16 주식회사 하이닉스반도체 반도체 소자의 금속배선간 절연막 형성방법
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6833280B1 (en) 1998-03-13 2004-12-21 Micron Technology, Inc. Process for fabricating films of uniform properties on semiconductor devices
KR100643105B1 (ko) * 1998-05-06 2006-11-13 텍사스 인스트루먼츠 인코포레이티드 플립-칩 전자 디바이스를 언더필링하는 저응력 방법 및 장치
TW441006B (en) * 1998-05-18 2001-06-16 United Microelectronics Corp Method of forming inter-metal dielectric layer
US6350673B1 (en) * 1998-08-13 2002-02-26 Texas Instruments Incorporated Method for decreasing CHC degradation
US6384466B1 (en) * 1998-08-27 2002-05-07 Micron Technology, Inc. Multi-layer dielectric and method of forming same
KR20000024717A (ko) * 1998-10-01 2000-05-06 김영환 다공성 절연막 형성 방법
US6159842A (en) * 1999-01-11 2000-12-12 Taiwan Semiconductor Manufacturing Company Method for fabricating a hybrid low-dielectric-constant intermetal dielectric (IMD) layer with improved reliability for multilevel interconnections
US6211063B1 (en) 1999-05-25 2001-04-03 Taiwan Semiconductor Manufacturing Company Method to fabricate self-aligned dual damascene structures
US6358841B1 (en) 1999-08-23 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of copper CMP on low dielectric constant HSQ material
US20050158666A1 (en) * 1999-10-15 2005-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple etch method for etching material etchable with oxygen containing plasma
US6372664B1 (en) 1999-10-15 2002-04-16 Taiwan Semiconductor Manufacturing Company Crack resistant multi-layer dielectric layer and method for formation thereof
US6403464B1 (en) 1999-11-03 2002-06-11 Taiwan Semiconductor Manufacturing Company Method to reduce the moisture content in an organic low dielectric constant material
US6531389B1 (en) 1999-12-20 2003-03-11 Taiwan Semiconductor Manufacturing Company Method for forming incompletely landed via with attenuated contact resistance
US6548901B1 (en) 2000-06-15 2003-04-15 International Business Machines Corporation Cu/low-k BEOL with nonconcurrent hybrid dielectric interface
US6642552B2 (en) * 2001-02-02 2003-11-04 Grail Semiconductor Inductive storage capacitor
US6759327B2 (en) * 2001-10-09 2004-07-06 Applied Materials Inc. Method of depositing low k barrier layers
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
JP2003332423A (ja) * 2002-05-14 2003-11-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6925357B2 (en) * 2002-07-25 2005-08-02 Intouch Health, Inc. Medical tele-robotic system
US6727184B1 (en) * 2002-10-29 2004-04-27 Taiwan Semiconductor Manufacturing Co., Ltd Method for coating a thick spin-on-glass layer on a semiconductor structure
US6902440B2 (en) * 2003-10-21 2005-06-07 Freescale Semiconductor, Inc. Method of forming a low K dielectric in a semiconductor manufacturing process
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US20050277302A1 (en) * 2004-05-28 2005-12-15 Nguyen Son V Advanced low dielectric constant barrier layers
US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
KR100675895B1 (ko) * 2005-06-29 2007-02-02 주식회사 하이닉스반도체 반도체소자의 금속배선구조 및 그 제조방법
JP6726142B2 (ja) * 2017-08-28 2020-07-22 信越化学工業株式会社 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体
JP6940335B2 (ja) 2017-08-30 2021-09-29 信越化学工業株式会社 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane

Also Published As

Publication number Publication date
JPH08255834A (ja) 1996-10-01
US5607773A (en) 1997-03-04
KR100372216B1 (ko) 2003-03-28

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MM4A Annulment or lapse of patent due to non-payment of fees
MK4A Expiration of patent term of an invention patent