TW293908B - - Google Patents

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Publication number
TW293908B
TW293908B TW084112836A TW84112836A TW293908B TW 293908 B TW293908 B TW 293908B TW 084112836 A TW084112836 A TW 084112836A TW 84112836 A TW84112836 A TW 84112836A TW 293908 B TW293908 B TW 293908B
Authority
TW
Taiwan
Prior art keywords
semiconductor memory
capacitor
potential
power supply
memory
Prior art date
Application number
TW084112836A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW293908B publication Critical patent/TW293908B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW084112836A 1994-12-20 1995-12-01 TW293908B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31629594A JP3590115B2 (ja) 1994-12-20 1994-12-20 半導体メモリ

Publications (1)

Publication Number Publication Date
TW293908B true TW293908B (enExample) 1996-12-21

Family

ID=18075530

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112836A TW293908B (enExample) 1994-12-20 1995-12-01

Country Status (4)

Country Link
US (1) US5615145A (enExample)
JP (1) JP3590115B2 (enExample)
KR (1) KR100385363B1 (enExample)
TW (1) TW293908B (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682344A (en) * 1995-09-11 1997-10-28 Micron Technology, Inc. Destructive read protection using address blocking technique
JP3645338B2 (ja) * 1995-12-11 2005-05-11 株式会社東芝 不揮発性半導体記憶装置
KR100601928B1 (ko) * 1996-06-10 2006-10-04 삼성전자주식회사 강유전체랜덤액세서메모리의비휘발성유지장치및방법
US5703804A (en) * 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
JP3003628B2 (ja) * 1997-06-16 2000-01-31 日本電気株式会社 強誘電体メモリとその書き込み方法
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100247934B1 (ko) 1997-10-07 2000-03-15 윤종용 강유전체 램 장치 및 그 제조방법
US6028783A (en) 1997-11-14 2000-02-22 Ramtron International Corporation Memory cell configuration for a 1T/1C ferroelectric memory
US5995406A (en) * 1997-11-14 1999-11-30 Ramtron International Corporation Plate line segmentation in a 1T/1C ferroelectric memory
US5978251A (en) * 1997-11-14 1999-11-02 Ramtron International Corporation Plate line driver circuit for a 1T/1C ferroelectric memory
US5969980A (en) * 1997-11-14 1999-10-19 Ramtron International Corporation Sense amplifier configuration for a 1T/1C ferroelectric memory
US5986919A (en) * 1997-11-14 1999-11-16 Ramtron International Corporation Reference cell configuration for a 1T/1C ferroelectric memory
US20050122765A1 (en) * 1997-11-14 2005-06-09 Allen Judith E. Reference cell configuration for a 1T/1C ferroelectric memory
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US5956266A (en) * 1997-11-14 1999-09-21 Ramtron International Corporation Reference cell for a 1T/1C ferroelectric memory
US5892728A (en) * 1997-11-14 1999-04-06 Ramtron International Corporation Column decoder configuration for a 1T/1C ferroelectric memory
US5880989A (en) * 1997-11-14 1999-03-09 Ramtron International Corporation Sensing methodology for a 1T/1C ferroelectric memory
KR100457346B1 (ko) * 1997-11-27 2005-04-06 삼성전자주식회사 강유전체 랜덤 액세스 메모리 장치
JP3717097B2 (ja) * 1998-07-29 2005-11-16 富士通株式会社 強誘電体メモリ
US6204723B1 (en) * 1999-04-29 2001-03-20 International Business Machines Corporation Bias circuit for series connected decoupling capacitors
US6147895A (en) * 1999-06-04 2000-11-14 Celis Semiconductor Corporation Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same
KR100324594B1 (ko) * 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
KR100318440B1 (ko) * 1999-06-28 2001-12-24 박종섭 강유전체 메모리 장치 및 그의 구동방법
US6392916B1 (en) * 1999-10-01 2002-05-21 Samsung Electronics Co., Ltd. Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device
JP2001297581A (ja) * 2000-04-11 2001-10-26 Fujitsu Ltd データ読み出し方法及び半導体記憶装置
JP4481464B2 (ja) * 2000-09-20 2010-06-16 株式会社東芝 半導体記憶装置及びその製造方法
KR100389032B1 (ko) * 2000-11-21 2003-06-25 삼성전자주식회사 강유전체 메모리 장치 및 그의 제조 방법
JP4329919B2 (ja) * 2001-03-13 2009-09-09 Ｏｋｉセミコンダクタ株式会社 半導体メモリおよび半導体メモリの駆動方法
US6781865B2 (en) * 2001-06-06 2004-08-24 Matsushita Electric Industrial Co., Ltd. Nonvolatile selector, and integrated circuit device
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
CN100446118C (zh) * 2003-03-19 2008-12-24 富士通微电子株式会社 半导体存储装置
JP3783696B2 (ja) * 2003-04-10 2006-06-07 セイコーエプソン株式会社 強誘電体記憶装置のデータ記憶方法
JP2005064427A (ja) 2003-08-20 2005-03-10 Elpida Memory Inc 不揮発性ランダムアクセスメモリおよびその製造方法
JP4545133B2 (ja) * 2006-11-09 2010-09-15 富士通株式会社 半導体記憶装置及びその製造方法
US8686415B2 (en) * 2010-12-17 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6538426B2 (ja) 2014-05-30 2019-07-03 株式会社半導体エネルギー研究所 半導体装置及び電子機器
CN109791784A (zh) 2016-08-31 2019-05-21 美光科技公司 铁电存储器单元
KR102233267B1 (ko) 2016-08-31 2021-03-30 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리를 작동하기 위한 장치 및 방법
US10282108B2 (en) * 2016-08-31 2019-05-07 Micron Technology, Inc. Hybrid memory device using different types of capacitors
CN109643571A (zh) 2016-08-31 2019-04-16 美光科技公司 包含铁电存储器及用于存取铁电存储器的设备及方法
US10867675B2 (en) * 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3222243B2 (ja) * 1993-01-25 2001-10-22 株式会社日立製作所 半導体記憶装置とそれを用いた情報処理システム

Also Published As

Publication number Publication date
KR100385363B1 (ko) 2004-03-02
JPH08171793A (ja) 1996-07-02
KR960025784A (ko) 1996-07-20
US5615145A (en) 1997-03-25
JP3590115B2 (ja) 2004-11-17

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