TW211080B - - Google Patents
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- Publication number
- TW211080B TW211080B TW081106462A TW81106462A TW211080B TW 211080 B TW211080 B TW 211080B TW 081106462 A TW081106462 A TW 081106462A TW 81106462 A TW81106462 A TW 81106462A TW 211080 B TW211080 B TW 211080B
- Authority
- TW
- Taiwan
- Prior art keywords
- radiation
- monomer
- patent application
- item
- scope
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
- C08G75/20—Polysulfones
- C08G75/205—Copolymers of sulfur dioxide with unsaturated organic compounds
- C08G75/22—Copolymers of sulfur dioxide with unsaturated aliphatic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80697191A | 1991-12-12 | 1991-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW211080B true TW211080B (enExample) | 1993-08-11 |
Family
ID=25195261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081106462A TW211080B (enExample) | 1991-12-12 | 1992-08-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5728506A (enExample) |
| EP (1) | EP0546703A1 (enExample) |
| JP (1) | JP2686030B2 (enExample) |
| KR (1) | KR100272115B1 (enExample) |
| TW (1) | TW211080B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3711198B2 (ja) * | 1998-04-23 | 2005-10-26 | 東京応化工業株式会社 | レジストパターンの形成方法 |
| US6426175B2 (en) | 1999-02-22 | 2002-07-30 | International Business Machines Corporation | Fabrication of a high density long channel DRAM gate with or without a grooved gate |
| US6048664A (en) * | 1999-03-12 | 2000-04-11 | Lucent Technologies, Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US6537736B1 (en) | 1999-03-12 | 2003-03-25 | Matsushita Electric Industrial Co., Ltd. | Patten formation method |
| KR100465866B1 (ko) * | 2001-10-26 | 2005-01-13 | 주식회사 하이닉스반도체 | 유기반사방지막 조성물 및 그의 제조방법 |
| US7550249B2 (en) * | 2006-03-10 | 2009-06-23 | Az Electronic Materials Usa Corp. | Base soluble polymers for photoresist compositions |
| US7704670B2 (en) * | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
| US7759046B2 (en) * | 2006-12-20 | 2010-07-20 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
| KR20090114476A (ko) * | 2007-02-26 | 2009-11-03 | 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. | 실록산 중합체의 제조 방법 |
| JP2010519398A (ja) | 2007-02-27 | 2010-06-03 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | ケイ素に基づく反射防止膜用組成物 |
| CN102471248B (zh) * | 2009-08-10 | 2015-01-07 | Bhi有限合伙公司 | 用于递送1,3-丙二磺酸的方法、化合物和组合物 |
| RU2693462C2 (ru) | 2010-05-03 | 2019-07-03 | Курна, Инк. | Лечение заболеваний, связанных с сиртуином (sirt), путем ингибирования природного антисмыслового транскрипта к сиртуину (sirt) |
| CN103180445B (zh) | 2010-10-22 | 2018-02-16 | 库尔纳公司 | 通过抑制α‑L‑艾杜糖醛酸酶(IDUA)的天然反义转录物而治疗IDUA相关疾病 |
| WO2019213334A1 (en) * | 2018-05-03 | 2019-11-07 | Rpg Imx Llc | Magnetic mixing systems |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57179851A (en) * | 1981-04-30 | 1982-11-05 | Tokyo Ohka Kogyo Co Ltd | Formation of pattern |
| JPS5852638A (ja) * | 1981-09-24 | 1983-03-28 | Hitachi Ltd | 放射線感応性組成物 |
| JPS60254129A (ja) * | 1984-05-31 | 1985-12-14 | Fujitsu Ltd | パタ−ン形成方法 |
| JPS62215628A (ja) * | 1986-03-10 | 1987-09-22 | Chisso Corp | 二酸化硫黄と核置換トリアルキルシリルスチレンとの共重合体及びその製造方法 |
| US4965340A (en) * | 1986-06-18 | 1990-10-23 | Chisso Corporation | Copolymer from sulfur dioxide and vinyl compound |
| JPH0629323B2 (ja) * | 1986-06-18 | 1994-04-20 | チッソ株式会社 | 二酸化硫黄とビニル化合物から成る多元共重合体 |
| JPH0611791B2 (ja) * | 1986-06-20 | 1994-02-16 | チッソ株式会社 | 二酸化硫黄、アセチレン化合物およびビニル化合物の共重合体 |
| JPS63129340A (ja) * | 1986-11-20 | 1988-06-01 | Minoru Matsuda | 放射線感応樹脂組成物 |
| US4996136A (en) * | 1988-02-25 | 1991-02-26 | At&T Bell Laboratories | Radiation sensitive materials and devices made therewith |
| JP2540199B2 (ja) * | 1988-02-25 | 1996-10-02 | アメリカン テレフォン アンド テレグラフ カムパニー | デバイスの製造方法 |
| US5066566A (en) * | 1990-07-31 | 1991-11-19 | At&T Bell Laboratories | Resist materials |
| JPH0721055B2 (ja) * | 1991-10-31 | 1995-03-08 | チッソ株式会社 | 二酸化硫黄と核置換スチレン誘導体との共重合体 |
| EP0608983B1 (en) * | 1993-01-25 | 1997-11-12 | AT&T Corp. | A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers |
-
1992
- 1992-08-15 TW TW081106462A patent/TW211080B/zh not_active IP Right Cessation
- 1992-11-20 EP EP92310594A patent/EP0546703A1/en not_active Withdrawn
- 1992-12-04 KR KR1019920023276A patent/KR100272115B1/ko not_active Expired - Lifetime
- 1992-12-07 JP JP4351061A patent/JP2686030B2/ja not_active Expired - Lifetime
-
1996
- 1996-03-11 US US08/614,926 patent/US5728506A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100272115B1 (ko) | 2001-03-02 |
| EP0546703A1 (en) | 1993-06-16 |
| JP2686030B2 (ja) | 1997-12-08 |
| US5728506A (en) | 1998-03-17 |
| JPH0683056A (ja) | 1994-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |