JP2686030B2 - デバイスの製造方法 - Google Patents

デバイスの製造方法

Info

Publication number
JP2686030B2
JP2686030B2 JP4351061A JP35106192A JP2686030B2 JP 2686030 B2 JP2686030 B2 JP 2686030B2 JP 4351061 A JP4351061 A JP 4351061A JP 35106192 A JP35106192 A JP 35106192A JP 2686030 B2 JP2686030 B2 JP 2686030B2
Authority
JP
Japan
Prior art keywords
monomer
polymer
radiation
resist
species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP4351061A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0683056A (ja
Inventor
ミホコ コメタニ ジャネット
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Inc filed Critical AT&T Inc
Publication of JPH0683056A publication Critical patent/JPH0683056A/ja
Application granted granted Critical
Publication of JP2686030B2 publication Critical patent/JP2686030B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/20—Polysulfones
    • C08G75/205—Copolymers of sulfur dioxide with unsaturated organic compounds
    • C08G75/22—Copolymers of sulfur dioxide with unsaturated aliphatic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
JP4351061A 1991-12-12 1992-12-07 デバイスの製造方法 Expired - Lifetime JP2686030B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80697191A 1991-12-12 1991-12-12
US806971 1991-12-12

Publications (2)

Publication Number Publication Date
JPH0683056A JPH0683056A (ja) 1994-03-25
JP2686030B2 true JP2686030B2 (ja) 1997-12-08

Family

ID=25195261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4351061A Expired - Lifetime JP2686030B2 (ja) 1991-12-12 1992-12-07 デバイスの製造方法

Country Status (5)

Country Link
US (1) US5728506A (enExample)
EP (1) EP0546703A1 (enExample)
JP (1) JP2686030B2 (enExample)
KR (1) KR100272115B1 (enExample)
TW (1) TW211080B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3711198B2 (ja) * 1998-04-23 2005-10-26 東京応化工業株式会社 レジストパターンの形成方法
US6426175B2 (en) 1999-02-22 2002-07-30 International Business Machines Corporation Fabrication of a high density long channel DRAM gate with or without a grooved gate
US6048664A (en) * 1999-03-12 2000-04-11 Lucent Technologies, Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6537736B1 (en) 1999-03-12 2003-03-25 Matsushita Electric Industrial Co., Ltd. Patten formation method
KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR20090114476A (ko) * 2007-02-26 2009-11-03 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. 실록산 중합체의 제조 방법
CN101622296B (zh) 2007-02-27 2013-10-16 Az电子材料美国公司 硅基抗反射涂料组合物
EA201290007A1 (ru) * 2009-08-10 2013-01-30 Беллус Хелс Инк. Способы, соединения и композиции для доставки 1,3-пропандисульфокислоты
WO2011139387A1 (en) 2010-05-03 2011-11-10 Opko Curna, Llc Treatment of sirtuin (sirt) related diseases by inhibition of natural antisense transcript to a sirtuin (sirt)
JP6049623B2 (ja) 2010-10-22 2016-12-21 カッパーアールエヌエー，インコーポレイテッド α‐Ｌ‐イズロニダーゼ（ＩＤＵＡ）への天然アンチセンス転写物の阻害によるＩＤＵＡ関連疾患の治療
WO2019213334A1 (en) * 2018-05-03 2019-11-07 Rpg Imx Llc Magnetic mixing systems

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57179851A (en) * 1981-04-30 1982-11-05 Tokyo Ohka Kogyo Co Ltd Formation of pattern
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
JPS60254129A (ja) * 1984-05-31 1985-12-14 Fujitsu Ltd パタ−ン形成方法
JPS62215628A (ja) * 1986-03-10 1987-09-22 Chisso Corp 二酸化硫黄と核置換トリアルキルシリルスチレンとの共重合体及びその製造方法
US4965340A (en) * 1986-06-18 1990-10-23 Chisso Corporation Copolymer from sulfur dioxide and vinyl compound
JPH0629323B2 (ja) * 1986-06-18 1994-04-20 チッソ株式会社 二酸化硫黄とビニル化合物から成る多元共重合体
JPH0611791B2 (ja) * 1986-06-20 1994-02-16 チッソ株式会社 二酸化硫黄、アセチレン化合物およびビニル化合物の共重合体
JPS63129340A (ja) * 1986-11-20 1988-06-01 Minoru Matsuda 放射線感応樹脂組成物
US4996136A (en) * 1988-02-25 1991-02-26 At&T Bell Laboratories Radiation sensitive materials and devices made therewith
JP2540199B2 (ja) * 1988-02-25 1996-10-02 アメリカン テレフォン アンド テレグラフ カムパニー デバイスの製造方法
US5066566A (en) * 1990-07-31 1991-11-19 At&T Bell Laboratories Resist materials
JPH0721055B2 (ja) * 1991-10-31 1995-03-08 チッソ株式会社 二酸化硫黄と核置換スチレン誘導体との共重合体
DE69406687T2 (de) * 1993-01-25 1998-05-14 At & T Corp Ein Verfahren zum gesteuerten Entschützen von Polymeren und Verfahren zur Herstellung einer Vorrichtung welches diese zum Teil entschützten Polymere für Photoresiste benutzt

Also Published As

Publication number Publication date
TW211080B (enExample) 1993-08-11
EP0546703A1 (en) 1993-06-16
US5728506A (en) 1998-03-17
JPH0683056A (ja) 1994-03-25
KR100272115B1 (ko) 2001-03-02

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