TW202501679A - 基板旋轉裝置、加工系統及加工方法 - Google Patents

基板旋轉裝置、加工系統及加工方法 Download PDF

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Publication number
TW202501679A
TW202501679A TW113123254A TW113123254A TW202501679A TW 202501679 A TW202501679 A TW 202501679A TW 113123254 A TW113123254 A TW 113123254A TW 113123254 A TW113123254 A TW 113123254A TW 202501679 A TW202501679 A TW 202501679A
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TW
Taiwan
Prior art keywords
rotating
substrate
shaft
axis
rotating shaft
Prior art date
Application number
TW113123254A
Other languages
English (en)
Chinese (zh)
Inventor
上原昇
Original Assignee
日商聖德科控股股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商聖德科控股股份有限公司 filed Critical 日商聖德科控股股份有限公司
Publication of TW202501679A publication Critical patent/TW202501679A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW113123254A 2023-06-23 2024-06-21 基板旋轉裝置、加工系統及加工方法 TW202501679A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2023/023385 2023-06-23
PCT/JP2023/023385 WO2024262029A1 (ja) 2023-06-23 2023-06-23 基板回転装置、加工システム、及び加工方法

Publications (1)

Publication Number Publication Date
TW202501679A true TW202501679A (zh) 2025-01-01

Family

ID=93935239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113123254A TW202501679A (zh) 2023-06-23 2024-06-21 基板旋轉裝置、加工系統及加工方法

Country Status (6)

Country Link
US (1) US12404586B2 (https=)
JP (1) JP7643757B1 (https=)
KR (1) KR102834405B1 (https=)
DE (1) DE112023000735T5 (https=)
TW (1) TW202501679A (https=)
WO (1) WO2024262029A1 (https=)

Family Cites Families (26)

* Cited by examiner, † Cited by third party
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US3128205A (en) 1961-09-11 1964-04-07 Optical Coating Laboratory Inc Apparatus for vacuum coating
CH599982A5 (https=) * 1975-09-02 1978-06-15 Balzers Patent Beteilig Ag
JPS58132755A (ja) 1982-02-03 1983-08-08 Toshiba Corp アモルフアス・シリコン感光体製造方法及びその製造装置
US4501766A (en) 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US5002011A (en) 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
DE4025659A1 (de) 1990-08-14 1992-02-20 Leybold Ag Umlaufraedergetriebe mit einem raedersatz, insbesondere fuer vorrichtungen zum beschichten von substraten
JPH0688227A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 成膜装置
JP3412849B2 (ja) 1992-12-25 2003-06-03 キヤノン株式会社 薄膜蒸着装置
US6588243B1 (en) * 1997-06-06 2003-07-08 Richard G. Hyatt, Jr. Electronic cam assembly
US6457864B1 (en) 1998-05-14 2002-10-01 Massachusetts Institute Of Technology Omni-directional high precision friction drive positioning stage
US6563686B2 (en) * 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
JP4234652B2 (ja) * 2004-08-26 2009-03-04 日本ピストンリング株式会社 皮膜形成用ワーク保持装置
JP2006192835A (ja) 2005-01-17 2006-07-27 Tohoku Ricoh Co Ltd 孔版印刷装置
JP4835826B2 (ja) 2005-04-25 2011-12-14 株式会社昭和真空 液晶配向膜用真空蒸着装置およびその成膜方法
JP2008121103A (ja) * 2006-10-16 2008-05-29 Able:Kk 真空蒸着装置
KR20100073305A (ko) * 2008-12-23 2010-07-01 주식회사 동부하이텍 백 메탈 공정챔버
KR101188863B1 (ko) 2009-12-23 2012-10-08 주식회사 코리아 인스트루먼트 챔버용 기판 이송장치 및 그 챔버 시스템
KR20120065841A (ko) * 2010-12-13 2012-06-21 삼성전자주식회사 기판 지지 유닛과, 이를 이용한 박막 증착 장치
KR101292399B1 (ko) * 2011-12-19 2013-08-01 주식회사 케이씨텍 공전 및 자전 가능한 서셉터 모듈을 구비하는 원자층 증착장치
JP6147168B2 (ja) * 2013-11-18 2017-06-14 株式会社神戸製鋼所 成膜装置
JP6481363B2 (ja) * 2014-12-25 2019-03-13 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
KR102743683B1 (ko) * 2018-05-04 2024-12-18 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 전기 디바이스에 대한 나노-코팅 보호 방법
CN108396302B (zh) * 2018-05-29 2024-07-09 大连威钛克纳米科技有限公司 基片承载轴连续摆动式转架
KR102132323B1 (ko) * 2018-07-13 2020-07-09 주식회사 넵시스 공전, 자전, 틸트를 통한 다중기판 진공증착 장치
JP6635492B1 (ja) * 2019-10-15 2020-01-29 サンテック株式会社 基板回転装置
CN117995642A (zh) * 2022-11-07 2024-05-07 北京北方华创微电子装备有限公司 半导体设备及其磁控管组件

Also Published As

Publication number Publication date
KR20240179092A (ko) 2024-12-31
KR102834405B1 (ko) 2025-07-14
WO2024262029A1 (ja) 2024-12-26
JPWO2024262029A1 (https=) 2024-12-26
JP7643757B1 (ja) 2025-03-11
DE112023000735T5 (de) 2025-02-20
US20250116000A1 (en) 2025-04-10
US12404586B2 (en) 2025-09-02

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