JPWO2024262029A1 - - Google Patents
Info
- Publication number
- JPWO2024262029A1 JPWO2024262029A1 JP2023577256A JP2023577256A JPWO2024262029A1 JP WO2024262029 A1 JPWO2024262029 A1 JP WO2024262029A1 JP 2023577256 A JP2023577256 A JP 2023577256A JP 2023577256 A JP2023577256 A JP 2023577256A JP WO2024262029 A1 JPWO2024262029 A1 JP WO2024262029A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/023385 WO2024262029A1 (ja) | 2023-06-23 | 2023-06-23 | 基板回転装置、加工システム、及び加工方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024262029A1 true JPWO2024262029A1 (https=) | 2024-12-26 |
| JP7643757B1 JP7643757B1 (ja) | 2025-03-11 |
| JPWO2024262029A5 JPWO2024262029A5 (https=) | 2025-05-27 |
Family
ID=93935239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023577256A Active JP7643757B1 (ja) | 2023-06-23 | 2023-06-23 | 基板回転装置、加工システム、及び加工方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12404586B2 (https=) |
| JP (1) | JP7643757B1 (https=) |
| KR (1) | KR102834405B1 (https=) |
| DE (1) | DE112023000735T5 (https=) |
| TW (1) | TW202501679A (https=) |
| WO (1) | WO2024262029A1 (https=) |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3128205A (en) | 1961-09-11 | 1964-04-07 | Optical Coating Laboratory Inc | Apparatus for vacuum coating |
| CH599982A5 (https=) * | 1975-09-02 | 1978-06-15 | Balzers Patent Beteilig Ag | |
| JPS58132755A (ja) | 1982-02-03 | 1983-08-08 | Toshiba Corp | アモルフアス・シリコン感光体製造方法及びその製造装置 |
| US4501766A (en) | 1982-02-03 | 1985-02-26 | Tokyo Shibaura Denki Kabushiki Kaisha | Film depositing apparatus and a film depositing method |
| US5002011A (en) | 1987-04-14 | 1991-03-26 | Kabushiki Kaisha Toshiba | Vapor deposition apparatus |
| DE4025659A1 (de) | 1990-08-14 | 1992-02-20 | Leybold Ag | Umlaufraedergetriebe mit einem raedersatz, insbesondere fuer vorrichtungen zum beschichten von substraten |
| JPH0688227A (ja) * | 1992-09-08 | 1994-03-29 | Fujitsu Ltd | 成膜装置 |
| JP3412849B2 (ja) | 1992-12-25 | 2003-06-03 | キヤノン株式会社 | 薄膜蒸着装置 |
| US6588243B1 (en) * | 1997-06-06 | 2003-07-08 | Richard G. Hyatt, Jr. | Electronic cam assembly |
| US6457864B1 (en) | 1998-05-14 | 2002-10-01 | Massachusetts Institute Of Technology | Omni-directional high precision friction drive positioning stage |
| US6563686B2 (en) * | 2001-03-19 | 2003-05-13 | Applied Materials, Inc. | Pedestal assembly with enhanced thermal conductivity |
| JP4234652B2 (ja) * | 2004-08-26 | 2009-03-04 | 日本ピストンリング株式会社 | 皮膜形成用ワーク保持装置 |
| JP2006192835A (ja) | 2005-01-17 | 2006-07-27 | Tohoku Ricoh Co Ltd | 孔版印刷装置 |
| JP4835826B2 (ja) | 2005-04-25 | 2011-12-14 | 株式会社昭和真空 | 液晶配向膜用真空蒸着装置およびその成膜方法 |
| JP2008121103A (ja) * | 2006-10-16 | 2008-05-29 | Able:Kk | 真空蒸着装置 |
| KR20100073305A (ko) * | 2008-12-23 | 2010-07-01 | 주식회사 동부하이텍 | 백 메탈 공정챔버 |
| KR101188863B1 (ko) | 2009-12-23 | 2012-10-08 | 주식회사 코리아 인스트루먼트 | 챔버용 기판 이송장치 및 그 챔버 시스템 |
| KR20120065841A (ko) * | 2010-12-13 | 2012-06-21 | 삼성전자주식회사 | 기판 지지 유닛과, 이를 이용한 박막 증착 장치 |
| KR101292399B1 (ko) * | 2011-12-19 | 2013-08-01 | 주식회사 케이씨텍 | 공전 및 자전 가능한 서셉터 모듈을 구비하는 원자층 증착장치 |
| JP6147168B2 (ja) * | 2013-11-18 | 2017-06-14 | 株式会社神戸製鋼所 | 成膜装置 |
| JP6481363B2 (ja) * | 2014-12-25 | 2019-03-13 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| KR102743683B1 (ko) * | 2018-05-04 | 2024-12-18 | 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 | 전기 디바이스에 대한 나노-코팅 보호 방법 |
| CN108396302B (zh) * | 2018-05-29 | 2024-07-09 | 大连威钛克纳米科技有限公司 | 基片承载轴连续摆动式转架 |
| KR102132323B1 (ko) * | 2018-07-13 | 2020-07-09 | 주식회사 넵시스 | 공전, 자전, 틸트를 통한 다중기판 진공증착 장치 |
| JP6635492B1 (ja) * | 2019-10-15 | 2020-01-29 | サンテック株式会社 | 基板回転装置 |
| CN117995642A (zh) * | 2022-11-07 | 2024-05-07 | 北京北方华创微电子装备有限公司 | 半导体设备及其磁控管组件 |
-
2023
- 2023-06-23 US US18/723,129 patent/US12404586B2/en active Active
- 2023-06-23 KR KR1020247015485A patent/KR102834405B1/ko active Active
- 2023-06-23 DE DE112023000735.7T patent/DE112023000735T5/de active Pending
- 2023-06-23 JP JP2023577256A patent/JP7643757B1/ja active Active
- 2023-06-23 WO PCT/JP2023/023385 patent/WO2024262029A1/ja not_active Ceased
-
2024
- 2024-06-21 TW TW113123254A patent/TW202501679A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240179092A (ko) | 2024-12-31 |
| KR102834405B1 (ko) | 2025-07-14 |
| WO2024262029A1 (ja) | 2024-12-26 |
| JP7643757B1 (ja) | 2025-03-11 |
| DE112023000735T5 (de) | 2025-02-20 |
| TW202501679A (zh) | 2025-01-01 |
| US20250116000A1 (en) | 2025-04-10 |
| US12404586B2 (en) | 2025-09-02 |
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