Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/50—Substrate holders
  • C23C14/505—Substrate holders for rotation of the substrates
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
  • C23C14/548—Controlling the composition
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/12—Substrate holders or susceptors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

• This disclosure relates to a substrate rotation device, a processing system, and a processing method.
• a thin film deposition apparatus equipped with a lens holder that rotatably holds multiple lenses is already known (see, for example, Patent Document 1).
• this thin film deposition apparatus when the lens holder rotates, the lens rotates on the lens holder by a planetary gear mechanism. As a result, the lens revolves in accordance with the rotation of the lens holder while rotating on its own axis.
• the spatial distribution of the film material emitted as scattered particles from a film material source such as a deposition source on the substrate is non-uniform.
• the non-uniformity worsens the larger the area of the substrate on which a thin film is formed.
• the conventional practice is to use a film thickness correction plate to level out the non-uniform thickness of thin films formed on a substrate.
• the film thickness correction plate when using a film thickness correction plate to uniformize the film thickness, the film thickness correction plate must be attached to the substrate with high precision, and furthermore, the film thickness correction plate must be remade to match the spatial distribution of the scattered particles.
• Cited Document 1 a technique in which the substrate on which the film is to be formed, such as a lens, is rotated and revolved around its axis during film formation can also be used to suppress the effects of non-uniform spatial distribution of scattered particles, allowing a roughly uniform thin film to be formed on the substrate.
• this technique there is still room for improvement in the uniformity of the thin film.
• the weight of the equipment increases and there is a possibility that its durability will deteriorate.
• a new technology related to a substrate rotation device that is suitable for uniform processing of a substrate, such as forming a film of uniform thickness on the substrate.
• a substrate rotation device includes a main rotation mechanism, a secondary rotation mechanism, and a guide structure.
• the main rotation mechanism rotates about a first rotation axis.
• the main rotation mechanism includes a sub-rotation mechanism.
• the sub-rotation mechanism revolves around a first rotation axis and rotates around a second rotation axis in conjunction with the rotation of the main rotation mechanism.
• the sub-rotation mechanism has a support structure that supports a substrate to be processed.
• the support structure rotates around the second rotation axis.
• the second rotation axis is displaced circumferentially around a third rotation axis provided between the first and second rotation axes in the main rotation mechanism with respect to the third rotation axis.
• the guide structure is provided around the first rotating shaft and controls the orbital motion of the secondary rotating mechanism.
• the guide structure has a contact surface that extends in a circumferential direction relative to the first rotating shaft.
• the guide structure controls the displacement of the second rotating shaft in the circumferential direction relative to the third rotating shaft, and when the contact surface comes into contact with the secondary rotating mechanism, causes the secondary rotating mechanism to perform orbital motion in an orbit along the contact surface.
• the orbital path is a perfect circle.
• the present inventor realized that this circular path is an obstacle to applying uniform processing to the substrate with high precision.
• the orbital path of the support structure can be controlled by the guide structure, so the orbital path of the support structure is not limited to a perfect circle corresponding to the shape of the gear, as in the case of a planetary gear mechanism.
• an orbital path other than a perfect circle can be achieved by making the guide structure a shape other than a perfect circle.
• some embodiments can provide increased design freedom for the support structure and the rotational motion of the substrate. This design freedom makes it possible to displace the position of each point in the substrate to be processed relative to the spatial distribution so as to counteract non-uniformity in the spatial distribution of processing.
• some embodiments can provide a substrate rotation device that can achieve uniform processing of the substrate.
• the design freedom allows the position of each point in the substrate on which the film is to be formed to be displaced relative to the spatial distribution of the film material so as to counteract the non-uniformity of the spatial distribution.
• a substrate rotation device can be provided that is capable of forming a uniform thin film on the substrate with high precision.
• the third rotation axis is located between the first rotation axis and the second rotation axis, so that the rotation diameter between the second rotation axis and the third rotation axis is smaller than the rotation diameter between the second rotation axis and the first rotation axis.
• the secondary rotating mechanism can revolve along the contact surface in an orbit other than a perfect circle.
• a substrate rotation device that is good for uniform processing of substrates can be realized with a simple and lightweight configuration.
• the simple configuration can contribute to the durability of the substrate rotation device.
• the lightweight configuration can enable high-speed rotation of the primary rotation mechanism with low energy.
• the contact surface may be an inner circumferential surface facing the first rotation axis of the guide structure.
• the inner circumferential surface may regulate radial outward displacement of the secondary rotation mechanism relative to the first rotation axis.
• the secondary rotating mechanism is subjected to centrifugal force acting radially outward in the rotation system of the main rotating mechanism. In other words, the secondary rotating mechanism tries to displace radially outward. If the displacement caused by centrifugal force is regulated by contact with the secondary rotating mechanism on the inner circumferential surface of the guide structure, the secondary rotating mechanism can be revolved stably in an orbit that follows the inner circumferential surface of the guide structure, and the orbital motion of the support structure can be controlled with high precision.
• the primary rotation mechanism may have a rotating plate that rotates about a first rotation axis.
• the rotating plate may have a slit that is circumferentially aligned with a third rotation axis.
• the secondary rotation mechanism may have a second rotation axis that passes through the slit.
• the secondary rotation mechanism may have a rotating platform having a support structure at a first end of the second rotating shaft.
• the secondary rotation mechanism may have a wheel that runs on the contact surface of the guide structure at a second end of the second rotating shaft opposite the first end. While the wheel runs on the contact surface in conjunction with the orbital motion, the wheel and the rotating platform connected through the second rotating shaft may rotate on their own axes.
• the secondary rotation mechanism may be coupled to the primary rotation mechanism via a spring that biases the secondary rotation mechanism in a direction that maintains contact with the contact surface. Such biasing allows the secondary rotation mechanism to revolve stably and accurately along the contact surface of the guide structure.
• the substrate rotation device may be configured such that the secondary rotation mechanism revolves around the first rotation axis in an elliptical orbit.
• the contact surfaces of the guide structure may be elliptically arranged in a circumferential direction relative to the first rotation axis.
• the contact surfaces of the guide structure may be arranged in a ring shape that is not point-symmetric in the circumferential direction about the first rotation axis.
• the secondary rotation mechanism may revolve around the first rotation axis in a non-point-symmetric orbit.
• Such an orbit is advantageous for uniform substrate processing.
• such an orbit is advantageous for forming a uniform film thickness, since the spatial distribution of the film material often exhibits a point-symmetric distribution.
• the guide structure may include a slide mechanism for moving at least a portion of the contact surface in a radial direction relative to the first rotation axis.
• a substrate rotation device including a slide mechanism, a user can adjust the revolution orbit through the slide mechanism, enabling more accurate and uniform processing of the substrate to be achieved.
• a processing system may be provided that includes a processing device configured to process the surface of a substrate that rotates and revolves together with the secondary rotation mechanism by operation of the substrate rotation device.
• the processing apparatus may be configured to process a surface of the substrate by forming a film on the surface of the substrate.
• the processing device may be configured to process the surface of the substrate by scraping the surface of the substrate.
• the processing apparatus may be configured to process a surface of the substrate by deposition, milling, or etching.
• the processing apparatus may be configured to process a surface of the substrate by spraying a material onto the surface of the substrate.
• the material may be a film-forming material.
• a processing method includes operating the above-mentioned substrate rotation device and processing a surface of a substrate that rotates and revolves together with the secondary rotation mechanism by the operation of the substrate rotation device.
• FIG. 1 is a conceptual diagram of a dielectric film deposition apparatus including a substrate rotation device in some embodiments.
• 1 is a schematic plan view of a substrate rotating apparatus in some embodiments.
• 1 is a schematic plan view of a guide device according to some embodiments.
• 1 is a schematic cross-sectional view taken along a rotation axis direction of a substrate rotating device in some embodiments.
• 1 is a schematic rear view of a primary rotating device with a secondary rotating device attached in accordance with some embodiments.
• FIG. 6A and 6B are diagrams illustrating circumferential displacement of the rotating table along slits provided in the main rotating plate in some embodiments.
• 7A and 7B are diagrams illustrating the orbital and rotational motions in some embodiments.
• FIG. 13 is a graph showing experimental results regarding film thickness.
• 4A to 4C are diagrams illustrating the circumferential profile of a guide rail in some embodiments.
• 1A to 1C are diagrams showing the configuration of a guide rail equipped with a slide mechanism in some embodiments.
• 11A and 11B are diagrams conceptually illustrating the configuration of a processing system according to some embodiments.
• 1...Dielectric film deposition apparatus 10...Deposition source, 15...Container, 100...Substrate rotation device, 110...Motor, 130...Guide device, 131...Base plate, 133...Ball bearing, 135...Shaft, 137...Guide member, 137A...Guide rail, 137B...Inner surface, 137C...Bottom plate, 137D...Hole, 139A...Guide rail, 141...First slide mechanism, 142...Second slide mechanism, 150...Main rotation device, 151...Main rotation plate, 155...Shaft, 159 ...slit, 170...secondary rotation device, 171...rotation table, 171A...recess, 171B...hollow portion, 175...shaft, 179...wheel, 179A...wheel body, 179B...O-ring, 180...rotation mechanism, 181...link, 183...joint, 185...spring, 190...substrate rotation device, 200...substrate, 300,
• the substrate rotation device 100 is a substrate rotation device 100 for film formation used in dielectric film deposition or crystal growth.
• the substrate rotation device 100 receives power from a motor 110 and revolves and rotates the substrate 200, which is the target of film formation as the processing object, in order to assist in the formation of a uniform thin film on the substrate 200.
• Examples of the substrate 200 include optical substrates as well as substrates used in the manufacture of semiconductor devices. Thin films are formed on the optical substrate, for example, to impart predetermined optical properties to the optical substrate. Examples of the optical substrate include flat substrates as well as substrates having convex or concave surfaces.
• the substrate rotation device 100 is disposed in a container 15 of a dielectric film deposition device 1 having multiple deposition sources 10, as shown in FIG. 1 for example.
• the surface of the substrate 200 on which the film is to be formed faces the deposition sources 10.
• the substrate rotation device 100 receives power from a motor 110 and causes the substrate 200 to revolve and rotate within the container 15.
• the container 15 is held in a vacuum state. In this state, the film material vaporizes from the deposition source 10, and the vaporized film material is dispersed into the container 15 as dispersed particles.
• the dashed lines in FIG. 1 conceptually show the spread of the dispersed particles, and the arrows conceptually show the direction of dispersion.
• the scattered particles adhere to the substrate 200, forming a thin film on the substrate 200.
• the deposition sources 10 operate in sequence when depositing different types of thin films on the substrate 200. When operating, each deposition source 10 vaporizes and scatters a corresponding film material so that a corresponding type of thin film is formed on the substrate 200.
• the spatial distribution of the film material scattered from each deposition source 10 onto the substrate 200 exhibits a geometric shape that is roughly point symmetric. The closer to the center, the greater the amount of scattered film material, and the farther away from the center, the smaller the amount of scattered film material.
• the coefficients k1, k2, k3,... follow the scattering distribution of the film material.
• the substrate 200 is revolved and rotated, thereby displacing each point on the substrate 200 with respect to the distribution of scattered film material. This brings the coefficients k1, k2, k3, ... closer to zero, and forms a uniform thin film over a wide area of the substrate 200, which shows a uniform distribution T(r) of film thickness ⁇ that is independent of distance r and has only the constant term T0.
• Substrate rotation device 100 realizes a non-point-symmetric revolution orbit that is not a perfect circle, such as an ellipse, thereby achieving more uniform thin film formation than conventional methods. To achieve this revolution orbit, substrate rotation device 100 is configured as shown in FIG. 2.
• the substrate rotation device 100 shown in FIG. 2 includes a guide device 130, a main rotation device 150 mounted on the guide device 130, and a number of secondary rotation devices 170 mounted on the main rotation device 150.
• the dashed lines in FIG. 2 show, in a transparent manner, a portion of the area located behind the surface of the substrate rotation device 100.
• the arrows in FIG. 2 indicate that the main rotation device 150 rotates around the first rotation axis R1, that the rotating table 171 of the secondary rotation device 170 rotates around the second rotation axis R2, and that the rotating table 171 can be displaced circumferentially around the third rotation axis R3.
• the guide device 130 includes a base plate 131, a shaft 135 rotatably supported on the base plate 131 via a ball bearing 133, and a guide member 137.
• the guide member 137 includes a guide rail 137A and a bottom plate 137C having a periphery with the same shape as the outline of the guide rail 137A. As shown in FIG. 4, the guide rail 137A protrudes from the periphery of the bottom plate 137C.
• the bottom plate 137C has a hole 137D for passing the shaft 135.
• the guide member 137 is fixed to the base plate 131, for example by screws, with the shaft 135 passing through the hole 137D.
• the guide rail 137A is arranged in a non-point-symmetric ring shape around the shaft 135 with the guide member 137 fixed to the base plate 131.
• the guide rail 137A has an elliptical outline in the circumferential direction.
• the main rotating device 150 is held rotatably relative to the guiding device 130. As shown in Figs. 2 and 4, the main rotating device 150 includes a main rotating plate 151 and a shaft 155.
• the shaft 155 extends from the center of the main rotating plate 151 toward the guiding device 130 in a normal direction to the main rotating plate 151.
• the shaft 155 is connected to the main rotating plate 151, and is further connected to a first end of the shaft 135 of the guiding device 130.
• the second end of the shaft 135 protrudes from the back surface of the guide device 130.
• the motor 110 is connected to the second end of the shaft 135.
• the main rotating device 150 is disposed on the guide device 130 so that the main rotating plate 151 receives power from the motor 110 and rotates around the shaft 155.
• the shaft 155 corresponds to the first rotation axis R1.
• the main rotating plate 151 has slits 159 that extend circumferentially about the third rotating axis R3 at 90 degree intervals.
• the number of secondary rotating devices 170 is the same as the number of slits 159. Each of the secondary rotating devices 170 passes through a corresponding slit 159.
• each of the secondary rotation devices 170 includes a rotating table 171, a shaft 175, wheels 179, and a rotating mechanism 180.
• the rotating mechanism 180 is disposed at a position corresponding to the dashed line in Figure 4. In other words, the rotating mechanism 180 is provided on the rear surface of the main rotating plate 151. Details of the rotating mechanism 180 are omitted in Figure 4.
• Shaft 175 is arranged to pass through slit 159 and rotation mechanism 180.
• Rotation mechanism 180 supports shaft 175 so that shaft 175 can rotate around its axis.
• Shaft 175 corresponds to second rotation axis R2.
• the rotation mechanism 180 supports the shaft 175 so that the shaft 175 can rotate along the slit 159, and in particular so that the shaft 175 can be displaced in the circumferential direction about the third rotation axis R3.
• the rotation mechanism 180 includes a link 181 for rotatably supporting the shaft 175, a joint 183 for supporting the link 181 so that it can be displaced in the circumferential direction about the third rotation axis R3, and a spring 185.
• the joint 183 is provided on the main rotating plate 151 so as to penetrate the main rotating plate 151 in the normal direction, and is thereby erected in the normal direction on the back surface of the main rotating plate 151.
• the link 181 has a hole (not shown) at a first end through which the joint 183 penetrates.
• the link 181 is supported by the joint 183 through this hole so as to be displaceable in the circumferential direction relative to the joint 183. In this way, the link 181 is attached to the main rotating plate 151 so as to be displaceable in the circumferential direction around the third rotation axis R3 relative to the third rotation axis R3.
• a bearing may be provided between the joint 183 and the link 181. This allows the link 181 to be held in the joint 183 so that it can be smoothly displaced in the circumferential direction around the joint 183.
• the link 181 further has a hole (not shown) through which the shaft 175 passes, at a second end that is further away from the first rotation axis R1 than the first end.
• the link 181 supports the shaft 175 so that the shaft 175 is rotatable about its axis.
• the shaft 175 is thereby attached to the rotating mechanism 180 so that it is rotatable about a second rotation axis R2 that is displaced circumferentially relative to the third rotation axis R3.
• a bearing may be provided between the shaft 175 and the link 181.
• the shaft 175 may thereby be supported by the link 181 so that it is smoothly rotatable.
• the slit 159 provided in the main rotating plate 151 is an arc-shaped slit curved along the circumferential direction about the third rotation axis R3.
• the shaft 175 is held by the link 181 so that the distance from the third rotation axis R3, i.e., the rotational diameter about the third rotation axis R3, corresponds to the distance from the third rotation axis R3 to the center of the slit 159.
• the shaft 175 is positioned so that it can be displaced along the slit 159 in the circumferential direction about the third rotation axis R3, as shown in Figures 6A and 6B.
• the spring 185 is disposed between the link 181 and the main rotating plate 151 such that a first end of the spring 185 is fixed to the link 181 and a second end of the spring 185 is fixed to the main rotating plate 151.
• the third rotation axis R3 is located between the first rotation axis R1 and the second rotation axis R2 in the radial direction relative to the first rotation axis R1, and the rotational diameter between the second rotation axis R2 and the third rotation axis R3 is smaller than the rotational diameter between the second rotation axis R2 and the first rotation axis R1.
• the spring 185 is provided between the link 181 and the main rotating plate 151 so that no biasing force is applied to the link 181 when the shaft 175 is at the circumferential center position of the slit 159, i.e., the position at the longest radial distance from the first rotation axis R1.
• the spring 185 is connected to the link 181 so that when the shaft 175 deviates from the central position, the spring 185 applies a biasing force to the link 181 in a direction returning the shaft 175 to the central position.
• a first end of the shaft 175 protrudes from the surface of the main rotating plate 151.
• the first end of the shaft 175 is connected to the center of the rotating table 171 on the back side of the rotating table 171.
• the rotating table 171 is positioned on the front side of the main rotating plate 151 in a state in which it can rotate around the shaft 175 and can be displaced in the circumferential direction about the third rotation axis R3 as the shaft 175 moves, as shown in FIG. 6A and FIG. 6B.
• the rotational diameter between the shaft 175 and the third rotation axis R3 is smaller than the rotational diameter between the shaft 175 and the first rotation axis R1. Therefore, the rotating table 171 is arranged on the main rotating plate 151 so that it can be displaced in the radial direction of the first rotation axis R1 as the shaft 175 moves in the circumferential direction about the third rotation axis R3.
• the rotating table 171 has a circular outline and a support structure on the front side that supports the rectangular substrate 200. Specifically, the rotating table 171 has a rectangular recess 171A on the front side that corresponds to the shape of the substrate 200 (see FIG. 4), and supports the substrate 200 fitted into the recess 171A.
• the rotating table 171 has a hollow internal structure as shown in FIG. 4, and supports the edge of the substrate 200 from the back side of the substrate 200.
• the shaft 175 connected to the rotating table 171 is a hollow cylindrical member.
• the cavity 171B of the rotating table 171 is connected to the second end of the shaft 175, which is opposite to the first end.
• the second end of the shaft 175 is located on the back side of the main rotating plate 151.
• a light receiving sensor RS is provided at the second end of the shaft 175 so as to cover the opening of the shaft 175.
• the light receiving sensor RS receives measurement light that is irradiated from above the substrate 200 and propagates through the substrate 200 and the cavity 171B, and outputs a signal corresponding to the intensity of the received measurement light.
• the signal output by the light receiving sensor RS is used to measure the thickness of the thin film formed on the substrate 200.
• the second end of shaft 175 is connected to the center of wheel 179.
• rotating table 171 rotates (i.e., spins) around shaft 175 in accordance with the rotation of wheel 179.
• an O-ring 179B is attached to the side wall of the wheel body 179A, which has a circular outline.
• the wheel 179 is positioned at a height where the O-ring 179B contacts the inner circumferential surface 137B of the guide rail 137A so that the wheel 179 runs on the inner circumferential surface 137B of the guide rail 137A.
• the above-mentioned spring 185 is provided so that the wheel 179 does not leave the inner circumferential surface 137B of the guide rail 137A and does not slip when the wheel 179 is moving, and moves stably on the inner circumferential surface 137B of the guide rail 137A.
• the wheel 179 receives tension from the spring 185 through the shaft 175, the tension having a component directed radially outward from the main rotating plate 151, and is pressed against the inner circumferential surface 137B of the guide rail 137A so as to maintain contact with the inner circumferential surface 137B of the guide rail 137A.
• the wheel 179 receives a radially outward biasing force from the spring 185 and is pressed against the inner circumferential surface 137B of the guide rail 137A.
• the wheel 179 revolves on a track along the guide rail 137A while rotating, with almost no slipping on the inner circumferential surface 137B of the guide rail 137A or separation from the guide rail 137A.
• the positions of the rotating table 171 and the wheels 179 in the radial direction of the main rotating plate 151 are controlled to positions along the guide rail 137A by centrifugal force, the biasing force of the spring 185, and mechanical action involving the resistance from the guide rail 137A to the wheels 179.
• the guide rail 137A controls the positions of the wheels 179 and the shaft 175 in the radial direction by contacting the wheels 179 of the secondary rotating device 170, thereby controlling the orbital motion of the rotating table 171.
• the substrate rotation device 100 uses the guide rails 137A to control the revolution orbit, causing the turntable 171 supporting the substrate 200 to revolve along a point-asymmetric elliptical orbit while rotating the turntable 171 on its axis.
• This revolution and rotation causes each point on the substrate 200 to be displaced in a complex manner so as to cross the non-uniform spatial distribution of the film material from the deposition source 10, so that a thin film of uniform thickness is formed on the surface of the substrate 200.
• the graph in Figure 8 shows the results of measuring the film thickness ⁇ of the substrate 200 held on the rotating table 171 and the film thickness ⁇ of the substrate 200 held on the substrate holding table when a thin film was formed while rotating the substrate rotating device 100, with a substrate holding table fixed so as not to move relative to the main rotating plate 151 between two adjacent sub-rotating devices 170 on the main rotating plate 151 for the purpose of comparison experiment.
• the horizontal axis in the graph indicates the position on the surface of the substrate 200.
• the vertical axis in the graph indicates the film thickness ⁇ of the thin film formed on the surface of the substrate 200.
• the line graph plotted with circular symbols indicates the spatial distribution of film thickness ⁇ on the substrate 200 placed on the substrate holding table, and the line graph plotted with rectangular symbols indicates the spatial distribution of film thickness ⁇ on the substrate 200 placed on the rotating table 171 in some embodiments. In this way, it can be seen that the substrate rotation device 100 in some embodiments can form a thin film of uniform thickness ( ⁇ ) on the substrate 200 with extremely high precision.
• the main rotation device 150 corresponding to the main rotation mechanism rotates around the first rotation axis R1 (shafts 135, 155).
• the rotating table 171, shaft 175, and wheels 179 of the secondary rotation device 170 which corresponds to the secondary rotation mechanism, revolve around the first rotation axis R1 (shafts 135, 155) and rotate around the second rotation axis R2 (shaft 175) as the main rotating plate 151 rotates.
• the rotating table 171, shaft 175, and wheels 179 are provided on the main rotating plate 151.
• the rotation table 171 having a support structure (recess 171A) for the substrate 200 rotates around the second rotation axis R2 (shaft 175), and furthermore, the second rotation axis R2 (shaft 175) is displaced circumferentially relative to the third rotation axis R3.
• the third rotation axis R3 (joint 183) is provided between the first rotation axis R1 (shafts 135, 155) and the second rotation axis R2 (shaft 175) on the main rotating plate 151. Therefore, in conjunction with the displacement in the circumferential direction, the second rotation axis R2 (shaft 175) is displaced radially relative to the first rotation axis R1.
• the guide rail 137A that constitutes the guide structure has an inner peripheral surface 137B that is used to control the revolution motion of the rotating table 171.
• the inner peripheral surface 137B extends in the circumferential direction about the first rotation axis R1 (shafts 135, 155), has a non-point-symmetric ring-shaped contour, and faces the first rotation axis R1.
• the guide rail 137A brings the inner circumferential surface 137B into contact with the wheels 179 of the secondary rotating device 170, and regulates the displacement of the wheels 179 radially outward from the main rotating plate 151.
• the guide rail 137A controls the circumferential displacement along the second rotating axis R2 (shaft 175) and the slits 159 of the rotating table 171, and the associated radial displacement relative to the first rotating axis R1, so that the rotating table 171 revolves on an orbit corresponding to the inner circumferential surface 137B (an orbit along the inner circumferential surface 137B).
• the substrate rotation device 100 of some embodiments achieves a point-asymmetric revolution motion accompanied by rotation of the rotating table 171 without using a film thickness correction plate or a planetary gear mechanism, and displaces each point on the substrate 200 with respect to the spatial distribution of the film material scattered from the deposition source 10. Therefore, as can be seen from the experimental results, a uniform thin film can be formed on the surface of the substrate 200 with high precision.
• the turntable 171 can be made to revolve on an asymmetrical elliptical revolution orbit, so that the influence of the even function term can be eliminated and a uniform film thickness ⁇ can be achieved.
• planetary gear mechanisms are prone to vibration during rotation, but with the substrate rotation device 100 of some embodiments, vibration during rotation can also be suppressed. This vibration suppression contributes to highly accurate film thickness formation.
• the revolution orbit is controlled using guide rails 137A instead of gears, making it easier to manufacture a relatively large-scale substrate rotation device 100, and a system can be constructed that can form a uniform film thickness on a large substrate 200. Therefore, according to some embodiments, it is possible to reduce costs associated with film formation and improve product productivity.
• the biasing force and centrifugal force of the spring 185 are used to press the wheels 179 of the secondary rotation device 170 against the inner circumferential surface 137B of the guide rail 137A so that they do not separate and do not slip.
• the rotation of the wheels 179 is then used to rotate the turntable 171 about the second rotation axis R2 (shaft 175). This allows for highly accurate control of the rotational motion of the substrate 200, enabling highly accurate thin film formation.
• the rotation mechanism 180 holds the second rotation axis R2 by a link mechanism so that it can move circumferentially relative to the third rotation axis R3, and thereby be displaced radially relative to the first rotation axis R1. Therefore, with a simple configuration, the turntable 171 can be held so that it can be displaced radially relative to the first rotation axis R1. Therefore, it is possible to manufacture a substrate rotation device 100 that is lightweight and highly durable. Another advantage of the light weight is that the main rotating plate 151 can be rotated at high speed with less energy.
• the revolution orbit can be any ellipse with an ellipticity a/b of 0.99 or less.
• a is the shortest distance of the ellipse
• b is the longest distance of the ellipse.
• the guide rail 137A may be changed to a guide rail 139A having a non-point-symmetric ring-shaped contour other than an ellipse.
• the guide rail 139A may be arranged on the base plate 131 so as to meander in the circumferential direction.
• the substrate rotation device 100 can realize a wide variety of revolution movements.
• the substrate rotation device 100 may be provided with a mechanism for moving the guide rails 137A and 139A.
• the substrate rotation device 190 includes a first slide mechanism 141 and a second slide mechanism 142.
• the first slide mechanism 141 slides the first portion 1391 of the guide rail 139A in the radial direction relative to the first rotation axis.
• the second slide mechanism 142 slides the second portion 1392 of the guide rail 139A in the radial direction relative to the first rotation axis.
• the first slide mechanism 141 and the second slide mechanism 142 are disposed on the base plate 131 of the guide device 130.
• the first portion 1391 and the second portion 1392 of the guide rail 139A are separated from the bottom plate and other portions of the guide rail 139A.
• the substrate rotation device 190 can be configured similarly to the substrate rotation device 100 of the above-described embodiment, except that a portion of the guide rail 139A is configured to be movable, and that the substrate rotation device 190 is equipped with first and second slide mechanisms 141, 142.
• the substrate rotation device 190 can adjust the orbit of the turntable 171 to achieve a uniform film thickness, thereby achieving more precise thin film formation.
• the substrate rotation device 100 is disposed in a container 15 of a dielectric film deposition apparatus 1 having a plurality of deposition sources 10.
• the dielectric film deposition apparatus 1 corresponds to a processing system for film formation, and the plurality of deposition sources 10 correspond to a processing device.
• the substrate rotation device 100 may be mounted on a processing system 300 for milling, as shown in FIG. 11A.
• the substrate rotation device 100 may then be used to rotate the substrate 200 to be milled.
• the processing system 300 shown in FIG. 11A includes the substrate rotation device 100 together with a processing device 301 for milling.
• the processing system 300 is configured to use an ion beam emitted from the processing device 301 to scrape and process the surface of the substrate 200, which rotates and revolves together with the turntable 171 due to the operation of the substrate rotation device 100.
• the substrate rotation device 100 may be mounted on a processing system 400 for etching, as shown in FIG. 11B.
• the substrate rotation device 100 may then be used to rotate the substrate 200 to be etched.
• the processing system 400 shown in FIG. 11B includes the substrate rotation device 100 together with a processing device 401 for etching.
• the processing system 400 is configured to use the scattering of an etching agent from the processing device 401 to scrape and process the surface of the substrate 200, which rotates and revolves together with the turntable 171 due to the operation of the substrate rotation device 100.
• the substrate rotation device has been described above in several embodiments, it goes without saying that the substrate rotation device is not limited to the above-described embodiments and can take various forms.
• the spring 185 may not be provided in the substrate rotation device 100. There may be cases where the centrifugal force is sufficient to press the wheel 179 onto the guide rail 137A even without the spring 185.
• the substrate rotation device 100 shown in the drawings is conceptual, and the dimensions and shapes of each part of the substrate rotation device 100 are not limited to those shown in the drawings.

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• 2023
  • 2023-06-23 US US18/723,129 patent/US12404586B2/en active Active
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