JP7643757B1 - 基板回転装置、加工システム、及び加工方法 - Google Patents

基板回転装置、加工システム、及び加工方法 Download PDF

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Publication number
JP7643757B1
JP7643757B1 JP2023577256A JP2023577256A JP7643757B1 JP 7643757 B1 JP7643757 B1 JP 7643757B1 JP 2023577256 A JP2023577256 A JP 2023577256A JP 2023577256 A JP2023577256 A JP 2023577256A JP 7643757 B1 JP7643757 B1 JP 7643757B1
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Japan
Prior art keywords
rotation
substrate
rotating
shaft
rotation axis
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JP2023577256A
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English (en)
Japanese (ja)
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JPWO2024262029A5 (https=
JPWO2024262029A1 (https=
Inventor
昇 上原
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Santec Holdings Corp
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Santec Holdings Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2023577256A 2023-06-23 2023-06-23 基板回転装置、加工システム、及び加工方法 Active JP7643757B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/023385 WO2024262029A1 (ja) 2023-06-23 2023-06-23 基板回転装置、加工システム、及び加工方法

Publications (3)

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JPWO2024262029A1 JPWO2024262029A1 (https=) 2024-12-26
JP7643757B1 true JP7643757B1 (ja) 2025-03-11
JPWO2024262029A5 JPWO2024262029A5 (https=) 2025-05-27

Family

ID=93935239

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JP2023577256A Active JP7643757B1 (ja) 2023-06-23 2023-06-23 基板回転装置、加工システム、及び加工方法

Country Status (6)

Country Link
US (1) US12404586B2 (https=)
JP (1) JP7643757B1 (https=)
KR (1) KR102834405B1 (https=)
DE (1) DE112023000735T5 (https=)
TW (1) TW202501679A (https=)
WO (1) WO2024262029A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688227A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 成膜装置
JP2006063391A (ja) * 2004-08-26 2006-03-09 Nippon Piston Ring Co Ltd 皮膜形成用ワーク保持装置
JP2008121103A (ja) * 2006-10-16 2008-05-29 Able:Kk 真空蒸着装置
KR101292399B1 (ko) * 2011-12-19 2013-08-01 주식회사 케이씨텍 공전 및 자전 가능한 서셉터 모듈을 구비하는 원자층 증착장치
JP2015098618A (ja) * 2013-11-18 2015-05-28 株式会社神戸製鋼所 成膜装置
JP2016122788A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
CN108396302A (zh) * 2018-05-29 2018-08-14 大连维钛克科技股份有限公司 基片承载轴连续摆动式转架
WO2021075074A1 (ja) * 2019-10-15 2021-04-22 サンテック株式会社 基板回転装置

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US3128205A (en) 1961-09-11 1964-04-07 Optical Coating Laboratory Inc Apparatus for vacuum coating
CH599982A5 (https=) * 1975-09-02 1978-06-15 Balzers Patent Beteilig Ag
JPS58132755A (ja) 1982-02-03 1983-08-08 Toshiba Corp アモルフアス・シリコン感光体製造方法及びその製造装置
US4501766A (en) 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
US5002011A (en) 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
DE4025659A1 (de) 1990-08-14 1992-02-20 Leybold Ag Umlaufraedergetriebe mit einem raedersatz, insbesondere fuer vorrichtungen zum beschichten von substraten
JP3412849B2 (ja) 1992-12-25 2003-06-03 キヤノン株式会社 薄膜蒸着装置
US6588243B1 (en) * 1997-06-06 2003-07-08 Richard G. Hyatt, Jr. Electronic cam assembly
US6457864B1 (en) 1998-05-14 2002-10-01 Massachusetts Institute Of Technology Omni-directional high precision friction drive positioning stage
US6563686B2 (en) * 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
JP2006192835A (ja) 2005-01-17 2006-07-27 Tohoku Ricoh Co Ltd 孔版印刷装置
JP4835826B2 (ja) 2005-04-25 2011-12-14 株式会社昭和真空 液晶配向膜用真空蒸着装置およびその成膜方法
KR20100073305A (ko) * 2008-12-23 2010-07-01 주식회사 동부하이텍 백 메탈 공정챔버
KR101188863B1 (ko) 2009-12-23 2012-10-08 주식회사 코리아 인스트루먼트 챔버용 기판 이송장치 및 그 챔버 시스템
KR20120065841A (ko) * 2010-12-13 2012-06-21 삼성전자주식회사 기판 지지 유닛과, 이를 이용한 박막 증착 장치
KR102743683B1 (ko) * 2018-05-04 2024-12-18 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 전기 디바이스에 대한 나노-코팅 보호 방법
KR102132323B1 (ko) * 2018-07-13 2020-07-09 주식회사 넵시스 공전, 자전, 틸트를 통한 다중기판 진공증착 장치
CN117995642A (zh) * 2022-11-07 2024-05-07 北京北方华创微电子装备有限公司 半导体设备及其磁控管组件

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0688227A (ja) * 1992-09-08 1994-03-29 Fujitsu Ltd 成膜装置
JP2006063391A (ja) * 2004-08-26 2006-03-09 Nippon Piston Ring Co Ltd 皮膜形成用ワーク保持装置
JP2008121103A (ja) * 2006-10-16 2008-05-29 Able:Kk 真空蒸着装置
KR101292399B1 (ko) * 2011-12-19 2013-08-01 주식회사 케이씨텍 공전 및 자전 가능한 서셉터 모듈을 구비하는 원자층 증착장치
JP2015098618A (ja) * 2013-11-18 2015-05-28 株式会社神戸製鋼所 成膜装置
JP2016122788A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
CN108396302A (zh) * 2018-05-29 2018-08-14 大连维钛克科技股份有限公司 基片承载轴连续摆动式转架
WO2021075074A1 (ja) * 2019-10-15 2021-04-22 サンテック株式会社 基板回転装置

Also Published As

Publication number Publication date
KR20240179092A (ko) 2024-12-31
KR102834405B1 (ko) 2025-07-14
WO2024262029A1 (ja) 2024-12-26
JPWO2024262029A1 (https=) 2024-12-26
DE112023000735T5 (de) 2025-02-20
TW202501679A (zh) 2025-01-01
US20250116000A1 (en) 2025-04-10
US12404586B2 (en) 2025-09-02

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