TW202133355A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TW202133355A
TW202133355A TW109124899A TW109124899A TW202133355A TW 202133355 A TW202133355 A TW 202133355A TW 109124899 A TW109124899 A TW 109124899A TW 109124899 A TW109124899 A TW 109124899A TW 202133355 A TW202133355 A TW 202133355A
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semiconductor wafer
resin layer
semiconductor
wafer
semiconductor device
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TW109124899A
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TWI770562B (zh
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前田竹識
高野勇佑
本間荘一
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日商鎧俠股份有限公司
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Abstract

實施型態之半導體裝置具備第1半導體晶片，該第1半導體晶片具有第1面和位於與第1面之相反側的第2面。第1接著層被設置在第1半導體晶片之第1面。第2半導體晶片具有第3面和位於該第3面之相反側的第4面，在第3面具有連接凸塊。第2半導體晶片係在第4面經由第1接著層而被接著於第1半導體晶片之第1面。配線基板係在第2半導體晶片之第4面側被連接於連接凸塊。第1樹脂層係在第2半導體晶片和配線基板之間覆蓋連接凸塊，被設置在位於第3面和第4面之間的第2半導體晶片之側面。第1接著層覆蓋第2半導體晶片之側面的上部。第1樹脂層覆蓋該側面之下部。第1接著層和第1樹脂層係在該側面上彼此接觸。

Description

半導體裝置及其製造方法
本實施型態係關於半導體裝置及其製造方法。 關連申請案的引用 本申請係以2020年2月17日申請在先的日本專利申請第2020-24545號的優先權的權利為基準，且要求該權利，其整體內容通過引用而包含於此。
將半導體晶片覆晶連接於中介基板之時，覆蓋半導體晶片之凸塊的下填充材沿著半導體晶片之側面攀爬。藉由如此的下填充材之攀爬，有下填充材附著於推壓半導體晶片之安裝工具的問題。為了處置如此的問題，考慮以薄膜來保護安裝工具。但是，在此情況，需要對每半導體晶片於薄膜開設吸附孔，處理量變低。再者，因於每次安裝處理需更換薄膜，故薄膜的成本高。
在以大量回焊進行連接之情況，由於半導體晶片之翹曲，有產生凸塊之連接不良之虞。
提供抑制樹脂附著於安裝工具，並且將半導體晶片確實地連接於基板的半導體裝置和其製造方法。
本實施型態所涉及之半導體裝置具備第1半導體晶片，該第1半導體晶片具有第1面和位於與該第1面之相反側的第2面。第1接著層被設置在第1半導體晶片之第1面。第2半導體晶片具有第3面和位於該第3面之相反側的第4面，在第3面具有連接凸塊。第2半導體晶片係在第4面經由第1接著層而被接著於第1半導體晶片之第1面。配線基板係在第2半導體晶片之第4面側被連接於連接凸塊。第1樹脂層係在第2半導體晶片和配線基板之間覆蓋連接凸塊，被設置在位於第3面和第4面之間的第2半導體晶片之側面。第1接著層覆蓋第2半導體晶片之側面的上部。第1樹脂層覆蓋側面之下部。第1接著層和第1樹脂層係在該側面上彼此接觸。
若藉由上述構成時，可以提供抑制樹脂附著於安裝工具，並且將半導體晶片確實地連接於基板的半導體裝置和其製造方法。
以下，參照圖面說明本發明所涉及之實施型態。本實施型態並非限定本發明。在以下的實施型態中，基板之上下方向表示將搭載半導體晶片之面設為上之情況的相對方向，有與依據重力加速度的上下方向不同之情況。圖面為示意性或概念性，各部分之比率等不一定與現實相同。在說明書和圖面中，對與已經出現的圖面中所述的元件相同的要素，標示相同符號，適當省略詳細說明。
(第1實施型態) 圖1係表示根據第1實施型態之半導體裝置之構成例的剖面圖。半導體裝置1具備作為第1半導體晶片之半導體晶片10、半導體晶片15、作為第2半導體晶片之半導體晶片20、配線基板30、作為第1樹脂層之接著層40和接著層45、作為第2樹脂層之樹脂層50、接合引線60、作為第3樹脂層的密封樹脂70。
半導體裝置1係例如NAND型快閃記憶體之封裝體。半導體晶片10係例如NAND型快閃記憶體之記憶體晶片。半導體晶片10具有作為第1面之背面10A，和作為位於背面10A之相反側的第2面之表面10B，和位於背面10A和表面10B之間的側面10C。在半導體晶片10之表面10B設置半導體元件11，被聚醯亞胺等之保護膜覆蓋。即使半導體元件11係例如記憶體單元陣列或周邊電路(CMOS (Complementary Metal Oxide Semiconductor)電路)亦可。記憶體單元陣列即使為將複數記憶體單元配置成三次元的立體型記憶體單元陣列亦可。再者，在表面10B設置被電性連接於半導體元件11中之任一者的墊片12。
接著層40被設置在半導體晶片10之背面10A。接著層40係例如DAF(Die Attachment Film))，接著半導體晶片10和半導體晶片20之間。
半導體晶片20係例如控制記憶體晶片之控制器晶片。半導體晶片20具有作為朝向配線基板之面的背面20A，和位於背面20A之相反側的表面20B，和位於背面20A和表面20B之間的側面20C。在半導體晶片20之背面20A設置半導體元件21，被聚醯亞胺等之保護膜覆蓋。即使半導體元件21係例如構成控制器的CMOS電路亦可。在背面20A設置與半導體元件21電性連接的凸塊25。凸塊25使用例如焊料等之低電阻金屬材料。
半導體晶片20係在表面20B隔著接著層40被接著於半導體晶片10之背面10A。
配線基板30雖然無圖示，但即使係例如包含複數配線層和複數絕緣層的印刷基板或中介層亦可。配線層使用例如銅等之低電阻金屬。絕緣層使用例如玻璃環氧樹脂等之絕緣性材料。在配線基板30之表面設置被電性連接於配線層中之任一者的墊片32。半導體晶片20之金屬凸塊25經由配線基板30之表面上的墊片(無圖示)而被連接於配線層。依此，可以隔著配線基板30之配線層，控制半導體晶片10、20。
樹脂層50係例如下填充材或NCP(Non-Conductive Past)等之樹脂。樹脂層50係在半導體晶片20和配線基板30之間覆蓋凸塊25，保護凸塊25和配線基板30之間的連接。再者，於將半導體晶片20之凸塊25連接於配線基板30之時，樹脂層50以液體被供給。因此，樹脂層50填充半導體晶片20和配線基板30之間，並且沿著半導體晶片20之側面20C攀爬，覆蓋該側面20C之至少下部。另外，針對樹脂層50之構成，參照圖2於後說明。
即使在半導體晶片10之表面10B上，疊層其他半導體晶片15亦可。半導體晶片15係經由接著層45而被接著於半導體晶片10之表面10B上。半導體晶片15即使為與半導體晶片10相同構成的記憶體晶片亦可，即使為其他構成之半導體晶片亦可。再者，在圖中，除了作為控制器晶片的半導體晶片20之外，疊層有兩個半導體晶片20、15。但是，即使半導體晶片之疊層數為3以上亦可。再者，即使控制器晶片也與配線基板30之表面平行地被配置複數個亦可。
接合引線60連接半導體晶片10、15、20之墊片12、16、32。
並且，密封樹脂70埋入密封半導體晶片10、15、20、樹脂層50、接合引線60等。依此，半導體裝置1係將複數半導體晶片10、15、20構成一個半導體封裝體。
圖2係表示圖1之框B1之內部的更詳細構成的剖面圖。在本實施型態中，接著層40被設置在半導體晶片10之背面10A和半導體晶片20之表面20B之間，覆蓋半導體晶片20之側面20C之上部。即是，接著層40係從半導體晶片20之表面20B覆蓋至側面20C之上部的中途。
另一方面，樹脂層50如上述般，從半導體晶片20之背面20A沿著側面20C攀爬，覆蓋側面20C之下部。即是，樹脂層50係從半導體晶片20之背面20A覆蓋至側面20C之下部的中途。
接著層40和樹脂層50在側面20C上彼此接觸，密封樹脂70不進入至該些之間。依此，側面20C係藉由接著層40及樹脂層50被覆蓋，不與密封樹脂70接觸。密封樹脂70係藉由接著層40及樹脂層50從半導體晶片20之側面20C間隔開。
再者，樹脂層50在樹脂層50和半導體晶片20之側面20C之邊界部具有凹部RC。接著層40在接著層40和側面20C之邊界部具有與凹部RC對應的突出部PR。如此一來，形成凹部RC及突出部PR係在以接著層40將半導體晶片10接著於半導體晶片20之後，樹脂層50沿著半導體晶片20之側面20C攀爬之故。即是，以接著層40將半導體晶片10接著於半導體晶片20，將半導體晶片20之凸塊25連接於配線基板30，之後，將樹脂層50供給至半導體晶片20和配線基板30之間。或是，以接著層40將半導體晶片10接著於半導體晶片20，在配線基板30上塗佈樹脂層50，之後，將半導體晶片20之凸塊25放入至樹脂層50內而連接於配線基板30。藉由如此之半導體裝置1之製造工程順序，形成凹部RC及突出部PR。依此，即使凹部RC和突出部PR非半導體晶片20之外周之一部分，而被形成在全周圍亦可。
再者，半導體晶片20在接觸於樹脂層50之前，先被接著於接著層40。因此，接著層40覆蓋半導體晶片20之表面20B之全體。另一方面，樹脂層50未接觸於半導體晶片20之表面20B。即是，樹脂層50不進入至半導體晶片20之表面20B和接著層40之間，未介入。
圖3係表示半導體晶片10、20及樹脂層50之位置關係的該略俯視圖。半導體晶片10大於半導體晶片20，從半導體晶片10之表面10B之上方觀看時，半導體晶片10之外緣較半導體晶片20之外緣更外側。樹脂層50被設置在半導體晶片20之背面20A及側面20C，被設置成包圍半導體晶片20之周圍。樹脂層50係如圖1所示般，也被設置在半導體晶片10之背面10A和配線基板30之間。因樹脂層50係從半導體晶片20之背面20A側攀爬，故其側面成為正錐狀。在接著層40附近，樹脂層50具有沿著接著層40之底面與正錐狀相反方向的傾斜。
接著，針對根據本實施型態之半導體裝置1之製造方法予以說明。
圖4～圖11係表示根據第1實施型態之半導體裝置之製造方法之一例的剖面圖。
首先，在半導體晶片10之表面10B黏貼研磨樹脂膠帶TP1。接著，如圖4所示般，一面以研磨樹脂膠帶TP1保護半導體晶片10之表面10B之半導體元件11，一面使用CMP(Chemical Mechanical Polishing)法研磨半導體晶片10之背面10A並予以薄化。此時，半導體晶片10並未個片化，為半導體晶圓(半導體基板)10W之狀態。以CMP之研磨機GD研磨半導體晶圓10W之背面10A。此時，即使對半導體晶圓10W以其他機械性研削、研磨並予以薄化亦可，即使以濕蝕刻予以薄化亦可。
接著，將接著層40接著於半導體晶圓10W之背面10A。接著，如圖5所示般，在切割樹脂膠帶TP2上隔著接著層40黏貼半導體晶圓10W之背面10A。
接著，如圖6所示般，在切割樹脂膠帶TP2上，切割半導體晶圓10W而將半導體晶圓10W個片化成半導體晶片10。此時，因半導體晶圓10W之表面10B朝向上方，故切割之對準變得容易。若切割以雷射切割或刀切割來實行即可。藉由使切割樹脂膠帶TP2擴張，將半導體晶圓10W個片化成半導體晶片10亦可。
接著，如圖7所示般，將另外的樹脂膠帶TP3黏貼於切割後之半導體晶片10之表面10B，使半導體晶片10朝樹脂膠帶TP3移動。依此，切割樹脂膠帶TP2從接著層40被除去，接著層40露出。
接著，如圖8所示般，將半導體晶片20之表面20B接著於半導體晶片10之背面10A之接著層40。在半導體晶片20之背面20A設置凸塊25。半導體晶片20係以與半導體晶片10之各者對應之方式而被接著。
接著，如圖9所示般，在配線基板30之表面凸塊25之連接位置塗佈液狀樹脂層50之材料。樹脂層50使用例如下填充材或NCP。即使樹脂層50之材料為包含還原劑的NCP亦可。或是，於對凸塊25供給還原劑(助溶劑)之後，一面使凸塊25接觸於樹脂層50，一面覆晶連接於配線基板30亦可。可以一面藉由還原劑除去凸塊25之表面的金屬氧化膜，一面將半導體晶片20覆晶連接於配線基板30。依此，抑制凸塊25和配線基板30之墊片的接觸不良。
接著，以安裝工具MT拾取圖8之半導體晶片10、20。如圖10所示般，安裝工具MT係使半導體晶片10之背面10A及半導體晶片20之背面20A與配線基板30之表面相向，使半導體晶片20之凸塊25接觸於樹脂層50。並且，安裝工具MT係將凸塊25在樹脂層50內連接於配線基板30。藉由熱處理，將凸塊25連接於配線基板30之墊片。此時，樹脂層50沿著半導體晶片20之側面20C攀爬。但是，因半導體晶片20之表面20B被接著層40覆蓋，故無樹脂層50附著於表面20B之情形。樹脂層50係在半導體晶片20和配線基板30之間覆蓋凸塊25，被形成在半導體晶片20之側面20C之下部。
另外，半導體晶片20之厚度以例如20μm～70μm為佳。在半導體晶片20之厚度未滿20μm之情況，由於被形成在半導體晶片20之電晶體的空乏層之影響，難以進行半導體晶片之動作。另一方面，半導體晶片20之厚度超過70μm之情況，有樹脂層50未到達至接著層40之情況。在此情況，半導體晶片20之側面20C被樹脂層50覆蓋，有不被保護之虞。在此情況，有密封樹脂70接觸於半導體晶片20之側面20C之虞。
並且，安裝工具MT係將其他半導體晶片15疊層在半導體晶片10上。半導體晶片15係藉由接著層45被接著於半導體晶片10之表面10B上。
接著使用接合引線60連接半導體晶片10、15、20及配線基板30之墊片。之後，在模封成形工程中，以密封樹脂70樹脂密封配線基板30上之半導體晶片10、20、15。依此，圖1所示之半導體裝置1之封裝體完成。
如此一來，若藉由本實施型態時，半導體晶片20在被接著於半導體晶片10上之後，與半導體晶片10一起被覆晶連接於配線基板30上。
假設僅將半導體晶片20覆晶連接於配線基板30之情況，安裝工具MT吸附半導體晶片20，一面接觸於配線基板30上之樹脂層50一面將凸塊25連接於配線基板30。此情況，樹脂層50沿著半導體晶片20之側面20C攀爬。考慮以下填充材不附著於安裝工具MT之方式，以薄膜(無圖示)保護安裝工具之表面。但是，在此情況，如同上述，需要對每半導體晶片20於薄膜開設吸附孔，處理量變低。再者，因於每次安裝處理需更換薄膜，故薄膜的成本高。並且，樹脂層50也繞入至半導體晶片20之表面20B上，樹脂層50進入至半導體晶片20和接著層40之間。在此情況，在可靠性試驗之吸濕回焊中，有半導體晶片20和接著層40剝離之虞。
對此，在根據本實施型態的製造方法中，半導體晶片20在被接著於半導體晶片10上之後，與半導體晶片10一起被覆晶連接於配線基板30上。如此一來，使半導體晶片10、20之疊層工程，與半導體晶片20之覆晶連接工程之順序成為相反。依此，樹脂層50即使沿著半導體晶片20之側面20C攀爬，也被半導體晶片10阻擋而不會到達至安裝工具MT。因此，本實施型態不需要覆蓋安裝工具MT之薄膜，可以縮短處理量，並且可以減少製造成本。
再者，因比半導體晶片20之覆晶連接工程先實行半導體晶片10、20之疊層工程，故樹脂層50不繞入至半導體晶片20之表面20B上。即是，因即使樹脂層50在半導體晶片20之側面20C攀爬，在半導體晶片20之表面20B也已經被接著接著層40，故樹脂層50不接觸於半導體晶片20之表面20B。另一方面，接著層40係如圖2所示般，也接觸於半導體晶片20之背面20A及其側面20C之上部。依此，可以提升半導體晶片20和接著層40之密接性，在可靠性試驗之吸濕回焊中，可以抑制半導體晶片20和接著層40剝離之情形。
從半導體晶片10之表面10B之上方觀看，以半導體晶片10大於半導體晶片20，半導體晶片10之外緣位於半導體晶片20之外緣之外側為佳。依此，可以有效果地抑制樹脂層50到達至安裝工具MT。
但是，即使半導體晶片10未必大於半導體晶片20亦可。即使半導體晶片10之大小與半導體晶片20之大小相等或較小，半導體晶片10亦可以僅以其厚度量使安裝工具MT和半導體晶片20的距離分開。因此，即使僅使半導體晶片10、20之疊層工程，與半導體晶片20之覆晶連接工程之順序成為相反，亦可以取得本實施型態之效果。
樹脂層50被設置成在半導體晶片20之背面20A和配線基板30之間，填滿凸塊25之周圍。並且，樹脂層50如圖2所示般，沿著半導體晶片20之側面20C與接著層40之底面之一部分接觸。依此，可以良好地保護半導體晶片20之側面20C。
半導體晶片20係在被接著於半導體晶片10之狀態被覆晶連接於配線基板30。因此，即使半導體晶片20之厚度薄至70μm以下，半導體晶片20之翹曲也藉由半導體晶片10被矯正。其結果，在覆晶連接中，凸塊25能確實地被連接於配線基板30。
(第2實施型態) 在第1實施型態中，如圖5及圖6所示般，為了切割的對準，使半導體晶圓10W從樹脂膠帶TP1朝樹脂膠帶TP2移動，而使半導體晶圓10W之表面10B朝上。
但是，例如在使用紅外線等而進行對準之情況，能夠從半導體晶圓10W之背面10A進行對準。在此情況，無須使半導體晶圓10W從樹脂膠帶TP1朝樹脂膠帶TP2移動。因此，在第2實施型態中，共同使用樹脂膠帶TP1，進行半導體晶圓10W之研磨、切割及半導體晶片20之黏貼。
圖12及圖13係表示根據第2實施型態之半導體裝置之製造方法之一例的剖面圖。如圖4所示般，在樹脂膠帶TP1上黏貼半導體晶圓10W之表面10B，照原樣地在樹脂膠帶TP1上，研磨半導體晶圓10W之背面10A，在背面10A形成接著層40。
如圖12及圖13所示般，照將半導體晶圓10W黏貼於樹脂膠帶TP1之原樣，切割半導體晶圓10W而將半導體晶圓10W個片化成半導體晶片10。接著，如圖8所示般，將半導體晶片20之表面20B接著於半導體晶片10之背面10A之接著層40。之後，經由圖9～圖11所示之工程，完成圖1所示之半導體裝置1之封裝體。
若藉由第2實施型態時，因無須頻繁地變更樹脂膠帶，故可以更縮短處理量，並且更減少製造成本。
即使第2實施型態之構成與第1實施型態之構成相同亦可。因此，第2實施型態亦可以取得第1實施型態的效果。
(第3實施型態) 圖14係表示根據第3實施型態之半導體裝置之構成例的剖面圖。若藉由第3實施型態時，接著層40以與半導體晶片20之表面20B略相等的尺寸被設置。接著層40不被設置在半導體晶片10之背面10A的全體，被設置在其一部分的區域。即使第3實施型態之其他構成與第1或第2實施型態對應的構成相同亦可。因此，第3實施型態可以取得與第1或第2實施型態相同的效果。
圖15及圖16係表示根據第3實施型態之半導體裝置之製造方法之一例的剖面圖。經過圖4之工程後，如圖15所示般，照將半導體晶圓10W黏貼於樹脂膠帶TP1之原樣，切割半導體晶圓10W而將半導體晶圓10W個片化成半導體晶片10。此時，在半導體晶圓10W無黏貼接層層40。
雖然在圖15中無圖示，但是接著層40被黏貼於半導體晶片20。即是，接著層40係於半導體晶片20被切割之前，被黏貼於半導體晶圓之表面20B。藉由以切割將該半導體晶圓予以個片化，形成具有接著層40之半導體晶片20。接層層40係藉由切割而被切斷成與半導體晶片20相同的尺寸。
接著，如圖16所示般，將半導體晶片20配置在半導體晶片10之背面10A上。依此，半導體晶片20係藉由接著層40被黏貼於半導體晶片10之背面10A上。
之後，經由圖9～圖11所示之工程，完成圖14所示之半導體裝置1之封裝體。
在第3實施型態中，接著層40覆蓋半導體晶片10之背面10A全體。但是，接著層40掩埋半導體晶片10和半導體晶片20之間的全體。依此，即使在第3實施型態中，樹脂層50不與半導體晶片20之表面20B接觸。依此，第3實施型態亦可以取得第1實施型態的效果。再者，第3實施型態與第2實施型態相同，因不需要頻繁地變更樹脂膠帶，故可以亦可以取與第2實施型態相同的效果。
(第4實施型態) 圖17係表示根據第4實施型態之半導體裝置之構成例的剖面圖。若藉由第4實施型態時，樹脂層50整體地被設置在半導體晶片10之背面10A之正下方。即是，樹脂層50以整體性地被填充於半導體晶片10之背面10A和配線基板30之表面之間。
若樹脂層50在圖9所示之工程中，將供給至配線基板30上之樹脂層50之液體材料的量，設為與半導體晶片10之背面10A和配線基板30之表面之間的空間之容積略相等即可。或是，即使樹脂層50之液體材料係以在將半導體晶片20與半導體晶片10一起覆晶連接於配線基板30上之後，掩埋半導體晶片10之背面10A和配線基板30之表面之間的空間之方式被供給亦可。半導體晶片10之背面10A之外緣部和配線基板30之間藉由樹脂層50被掩埋。
當固化樹脂層50時則可以支持半導體晶片10。依此，在第4實施型態中，不需要後述的間隔晶片。即使第4實施型態之其他構成與第1實施型態之構成相同亦可。依此，第4實施型態亦可以取得與第1實施型態相同的效果。
(第5實施型態) 圖18係表示根據第5實施型態之半導體裝置之構成例的剖面圖。若藉由第5實施型態時，間隔晶片80被配置在半導體晶片20的兩側。間隔晶片80被設置在半導體晶片10之背面10A的正下方。即是，在半導體晶片20之周圍，間隔晶片80被設置在半導體晶片10和配線基板30之間。從半導體晶片10之表面10B之上方觀看時，間隔晶片80具有四角形之框形狀以包圍半導體晶片20之周圍。或是，即使間隔晶片80被分割配置在半導體晶片20之四邊亦可。
間隔晶片80之背面係藉由接著層47而被接著於配線基板30之表面上。再者，間隔晶片80之表面係在半導體晶片10之背面10A被接著於接著層40。在半導體晶片10和配線基板30之間，於間隔晶片80之周圍，埋入密封樹脂70。
間隔晶片80具有與半導體晶片20略相等的厚度。再者，即使間隔晶片80為與半導體晶片20之基板(例如矽基板)相同的材料亦可。依此，間隔晶片80可以在半導體晶片20之周圍支持半導體晶片10，可以矯正半導體晶片10之翹曲，可以使半導體晶片10成為平坦。即使第5實施型態之其他構成與第1實施型態之構成相同亦可。依此，第5實施型態亦可以進一步取得與第1實施型態相同的效果。
圖19及圖20係表示根據第5實施型態之半導體裝置之製造方法之一例的剖面圖。經由圖4～圖8之工程之後，如圖19所示般，將間隔晶片80接著於半導體晶片20之周圍的接著層40上。在間隔晶片80事先設置接著層47。接著，於經過圖9所示之工程後，以安裝工具MT拾取半導體晶片10、20。接著，如圖20所示般，使半導體晶片10之背面10A及半導體晶片20之背面20A與配線基板30之表面相向，使半導體晶片20覆晶連接於配線基板30。於將半導體晶片20之凸塊25連接於配線基板30之時，將間隔晶片80設置在半導體晶片10和配線基板30之間。接著層47係於將半導體晶片20覆晶連接於配線基板30之時，將間隔晶片80接著於配線基板30。
之後，經由圖11之工程，完成圖18所示的半導體裝置1。
若藉由第5實施型態時，間隔晶片80可以在半導體晶片20之周圍支持半導體晶片10，可以矯正半導體晶片10之翹曲，使半導體晶片10平坦。
(變形例) 圖21係表示根據第5實施型態之變形例的半導體裝置之製造方法之一例的剖面圖。在本變形例中，將間隔晶片80事先接著於配線基板30上。之後，經由圖10及圖11所示的工程，將半導體晶片20覆晶連接於配線基板30上。依此，取得具有與第5實施型態相同之構造的半導體裝置1。
(第6實施型態) 圖22係表示根據第6實施型態之半導體裝置之構成例的剖面圖。第6實施型態係第4及第5實施型態之組合。若藉由第6實施型態時，與第5實施型態相同，在半導體晶片20之周圍，間隔晶片80被設置在半導體晶片10和配線基板30之間。
並且，樹脂層50以整體性地被填充於半導體晶片10之背面10A和配線基板30之表面之間。依此，半導體晶片20及間隔晶片80之周圍(側面)藉由樹脂層50被覆蓋且被保護。
即使第6實施型態之其他構成與第4或第5實施型態相同亦可。因此，第6實施型態可以取得第4及第5實施型態的效果。
(第7實施型態) 圖23係表示根據第7實施型態之半導體裝置之構成例的剖面圖。第7實施型態係於第3實施型態組合第5實施型態之間隔晶片80的實施型態。因此，接著層40係以半導體晶片20之表面20B的尺寸被設置，僅被設置在半導體晶片20之表面20B和半導體晶片10之背面10A之間。並且，在半導體晶片20之周圍，間隔晶片80被設置在半導體晶片10和配線基板30之間。因此，在間隔晶片80和半導體晶片10之間，不設置接著層40，被填充密封樹脂70。
即使第7實施型態之其他構成與第3或第5實施型態對應的構成相同亦可。因此，第7實施型態可以取得第3及第5實施型態的效果。
另外，在第7實施型態中，間隔晶片80未藉由接著層40被接著於半導體晶片10。因此，在第7實施型態之製造方法中，第7實施型態之間隔晶片80係如上述第5實施型態之變形例般，若以接著層47事先接著於配線基板30上即可。依此，間隔晶片80係藉由接著層47而被固定於配線基板30之特定位置上。
(第8實施型態) 圖24係表示根據第8實施型態之半導體裝置之構成例的剖面圖。在第8實施型態中，在第5實施型態之間隔晶片80之下方未設置接著層47。在間隔晶片80和配線基板30之間，被填充密封樹脂70。另一方面，間隔晶片80接著於接著層40。
即使第8實施型態之其他構成與第5實施型態對應的構成相同亦可。因此，第8實施型態可以取得第5實施型態的效果。
另外，因在第8實施型態中，未設置接著層47，故在第8實施型態之製造方法中，間隔晶片80與第5實施型態相同，經由接著層40而被接著於半導體晶片10。依此，間隔晶片80係於半導體晶片20之覆晶連接之時，被配置在配線基板30之特定位置。
(第9實施型態) 圖25係表示根據第9實施型態之半導體裝置之構成例的剖面圖。在第9實施型態中，第8實施型態之接著層40在半導體晶片20及間隔晶片80不連續，分別被分離。因此，接著層40係對應於半導體晶片20和半導體晶片10之間，及間隔晶片80和半導體晶片10之間之各者而被設置。即使第9實施型態之其他構成與第8實施型態對應的構成相同亦可。因此，第9實施型態可以取得第8實施型態的效果。
另外，在第9實施型態之製造方法中，在間隔晶片80事先設置接著層40，而將間隔晶片80接著於半導體晶片10。依此，間隔晶片80係於半導體晶片20之覆晶連接之時，被配置在配線基板30之特定位置。
(第10實施型態) 圖26係表示根據第10實施型態之半導體裝置之構成例的剖面圖。在第10實施型態中，為第4及第10實施型態的組合。若藉由第10實施型態時，在半導體晶片20及間隔晶片80的周圍，樹脂層50全體性地被填充於半導體晶片10之背面10A和配線基板30之表面之間。依此，半導體晶片20及間隔晶片80之周圍(側面)藉由樹脂層50被覆蓋且被保護。並且，在間隔晶片80和配線基板30之間被填充樹脂層50。
即使第10實施型態之其他構成與第10實施型態對應的構成相同亦可。因此，第10實施型態可以取得第4及第9實施型態的效果。
(第11實施型態) 圖27係表示根據第11實施型態之半導體裝置之構成例的剖面圖。在第11實施型態中，為第4及第7實施型態的組合。若藉由第11實施型態時，在半導體晶片20及間隔晶片80的周圍，樹脂層50全體性地被填充於半導體晶片10之背面10A和配線基板30之表面之間。依此，半導體晶片20及間隔晶片80之周圍(側面)藉由樹脂層50被覆蓋且被保護。並且，在間隔晶片80和配線基板10之間被填充樹脂層50。
即使第11實施型態之其他構成與第7實施型態對應的構成相同亦可。因此，第11實施型態可以取得第4及第7實施型態的效果。
雖然說明本發明之幾個實施型態，但是該些實施型態係以例之方式被表示，並無限定發明之範圍的意圖。該些實施型態可以其他各種型態來實施，只要在不脫離發明之主旨的範圍下，可做各種省略、置換及變更。該些實施型態或其變形當然也包含在發明範圍或主旨中，並且包含於申請專利範圍所記載之發明和其均等之範圍中。
1:半導體裝置 10:半導體晶片 10A:背面 10B:表面 10C:側面 10W:半導體晶圓 11:半導體元件 12:墊片 15:半導體晶片 16:墊片 20:半導體晶片 20A:背面 20B:表面 20C:側面 21:半導體元件 25:凸塊 30:配線基板 32:墊片 40:接著層 45:接著層 47:接著層 50:樹脂層 60:接合引線 70:密封樹脂 80:間隔晶片 RC:凹部 PR:突出部 GD:研磨機 TP1:樹脂膠帶 TP2:樹脂膠帶 TP3:樹脂膠帶 MT:安裝工具
[圖1]係表示根據第1實施型態的半導體裝置之構成例的剖面圖。 [圖2]係表示圖1之框B1之內部的更詳細構成的剖面圖。 [圖3]係表示半導體晶片及樹脂層之位置關係的該略俯視圖。 [圖4]係表示根據第1實施型態的半導體裝置之製造方法之一例的剖面圖。 [圖5]係接續圖4，表示製造方法之一例的剖面圖。 [圖6]係接續圖5，表示製造方法之一例的剖面圖。 [圖7]係接續圖6，表示製造方法之一例的剖面圖。 [圖8]係接續圖7，表示製造方法之一例的剖面圖。 [圖9]係接續圖8，表示製造方法之一例的剖面圖。 [圖10]係接續圖9，表示製造方法之一例的剖面圖。 [圖11]係接續圖10，表示製造方法之一例的剖面圖。 [圖12]係表示根據第2實施型態的半導體裝置之製造方法之一例的剖面圖。 [圖13]係接續圖12，表示製造方法之一例的剖面圖。 [圖14]係表示根據第3實施型態的半導體裝置之構成例的剖面圖。 [圖15]係表示根據第3實施型態的半導體裝置之製造方法之一例的剖面圖。 [圖16]係接續圖15，表示製造方法之一例的剖面圖。 [圖17]係表示根據第4實施型態的半導體裝置之構成例的剖面圖。 [圖18]係表示根據第5實施型態的半導體裝置之構成例的剖面圖。 [圖19]係表示根據第5實施型態的半導體裝置之製造方法之一例的剖面圖。 [圖20]係接續圖19，表示製造方法之一例的剖面圖。 [圖21]係表示根據第5實施型態之變形例的半導體裝置之製造方法之一例的剖面圖。 [圖22]係表示根據第6實施型態的半導體裝置之構成例的剖面圖。 [圖23]係表示根據第7實施型態的半導體裝置之構成例的剖面圖。 [圖24]係表示根據第8實施型態的半導體裝置之構成例的剖面圖。 [圖25]係表示根據第9實施型態的半導體裝置之構成例的剖面圖。 [圖26]係表示根據第10實施型態的半導體裝置之構成例的剖面圖。 [圖27]係表示根據第11實施型態的半導體裝置之構成例的剖面圖。
10:半導體晶片
10A:背面
20:半導體晶片
20B:表面
20C:側面
40:接著層
50:樹脂層
70:密封樹脂
RC:凹部
PR:突出部

Claims (11)

  1. 一種半導體裝置，具備: 第1半導體晶片，其具有第1面和位於與上述第1面之相反側的第2面； 第1樹脂層，其係被設置在上述第1面； 第2半導體晶片，其具有設置連接凸塊的第3面，和位於上述第3面之相反側，與上述第1樹脂層接觸的第4面； 配線基板，其係與上述連接凸塊連接；及 第2樹脂層，其係在上述第2半導體晶片和上述配線基板之間覆蓋上述連接凸塊，被設置在位於上述第3面和上述第4面之間的上述第2半導體晶片之側面， 上述第1樹脂層覆蓋上述側面之上部， 上述第2樹脂層覆蓋上述側面之下部， 上述第1樹脂層和上述第2樹脂層在上述側面上彼此接觸。
  2. 如請求項1所述之半導體裝置，其中 上述第2樹脂層在上述第2樹脂層和上述第2半導體晶片之上述側面的邊界部具有凹部， 上述第1樹脂層在上述第1樹脂層和上述第2半導體晶片之上述側面的邊界部具有與上述凹部對應的突出部。
  3. 如請求項1所述之半導體裝置，其中 上述第2樹脂層係從上述第2半導體晶片之上述第3面覆蓋至上述側面之中途。
  4. 如請求項1所述之半導體裝置，其中 上述第1樹脂層係從上述第2半導體晶片之上述第4面覆蓋至上述側面之中途。
  5. 如請求項1所述之半導體裝置，其中 從上述第2面之上方觀看時， 上述第1半導體晶片之外緣位於較上述第2半導體晶片之外緣更外側，上述第2樹脂層也被設置在上述第1半導體晶片之外緣部和上述配線基板之間。
  6. 如請求項1所述之半導體裝置，其中 從上述第2面之上方觀看時，上述第1半導體晶片之外緣位於較上述第2半導體晶片之外緣更外側，在上述第2半導體晶片之周圍，進一步具備被設置在上述第1半導體晶片和上述配線基板之間的間隔晶片。
  7. 如請求項6所述之半導體裝置，其中 進一步具備在上述第1半導體晶片和上述配線基板之間埋入上述間隔晶片之周圍的第3樹脂層。
  8. 如請求項6所述之半導體裝置，其中 上述間隔晶片為矽。
  9. 如請求項1所述之半導體裝置，其中 從上述第2面之上方觀看時，上述第1樹脂層為與上述第2半導體晶片略相等的尺寸。
  10. 一種半導體裝置之製造方法，具備下述步驟: 在具有第1面和位於上述第1面之相反側的第2面之第1半導體基板之上述第1面形成第1樹脂層， 將上述第1半導體基板個片化成複數第1半導體晶片； 使具有第3面和位於上述第3面之相反側的第4面，且在上述第3面具有連接凸塊的第2半導體晶片之上述第4面接觸並固定於上述第1樹脂層； 使上述第1面相向於配線基板而將上述連接凸塊連接於配線基板；及 在上述第2半導體晶片和上述配線基板之間覆蓋上述連接凸塊，在上述第2半導體晶片之側面之下部形成第2樹脂層。
  11. 如請求項10所述之半導體裝置之製造方法，其中 在第1樹脂膠帶上黏貼第2面，研磨上述第1面，在上述第1面形成上述第1樹脂層， 在第2樹脂膠帶上，隔著上述第1樹脂層黏貼上述第1面，將上述第1半導體基板個片化成上述第1半導體晶片， 在第3樹脂膠帶上黏貼上述第2面，使上述第4面接觸並固定於上述第1半導體晶片之上述第1面之上述第1樹脂層， 在上述配線基板上塗佈上述第2樹脂層之材料， 使上述第1面相向於上述配線基板而將上述連接凸塊在上述第2樹脂層內連接於上述配線基板。
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