JP5908030B2 - 貫通電極を有する半導体パッケージ及びその製造方法 - Google Patents
貫通電極を有する半導体パッケージ及びその製造方法 Download PDFInfo
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- JP5908030B2 JP5908030B2 JP2014125069A JP2014125069A JP5908030B2 JP 5908030 B2 JP5908030 B2 JP 5908030B2 JP 2014125069 A JP2014125069 A JP 2014125069A JP 2014125069 A JP2014125069 A JP 2014125069A JP 5908030 B2 JP5908030 B2 JP 5908030B2
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
前記半導体パッケージの第1モールド層の幅、前記半導体パッケージの第2モールド層の幅、及び前記半導体パッケージの基板の幅の中でいずれか1つは、前記チップの幅に比べて大きくなり得る。
前記第1活性層上にポリマー物質を含む第1モールド層を形成して前記基板に剛性を付し、前記第1モールド層を形成した後に、前記基板の第1後面を除去して前記基板を薄型化し、第2後面を露出させ、前記薄型化された基板内に前記第1活性層と電気的に連結される貫通電極を形成し、前記薄型化された基板上に前記基板内に提供された前記貫通電極と電気的に連結されるパッドを形成することを包含することができる。
図1A乃至図1Jは本発明の一実施形態による半導体パッケージの製造方法を示した断面図である。図1Dは図1Bの変形形態を示した断面図である。
図2A乃至図2Dは本発明の他の実施形態による半導体パッケージの製造方法を示した断面図である。以下には第1実施形態と異なる点に対して詳説し、同一な点に対しては省略するか、或いは概説する。
図3A乃至図3Hは本発明のその他の実施形態による半導体パッケージの製造方法を示した断面図である。図3Iは図3Aの変形形態を示した断面図である。図3Jは図3Gの変形形態を示した断面図である。
図4A乃至図4Eは本発明のその他の実施形態による半導体パッケージの製造方法を示した断面図である。以下には第1実施形態と異なる点に対して詳説し、同一な点に対しては省略するか、或いは概説する。
図5A乃至図5Eは本発明のその他の実施形態による半導体パッケージの製造方法を示した断面図である。以下には第1実施形態と異なる点に対して詳説し、同一な点に対しては省略するか、或いは概説する。
図6A乃至図6Dは本発明のその他の実施形態による半導体パッケージの製造方法を示した断面図である。以下には第1実施形態と異なる点に対して詳説し、同一な点に対しては省略するか、或いは概説する。
図7Aは本発明の実施形態による半導体パッケージを具備するメモリカードを示したブロック図である。図7Bは本発明の実施形態による半導体パッケージを応用した情報処理システムを示したブロック図である。
100・・・マスターチップ
101・・・下部ウエハー
101a・・・前面、活性面
101b・・・第1後面、非活性面
101c・・・第2後面
103・・・回路層
104・・・前面パッド
105・・・バンプ
109・・・外部端子
111・・・前面モールド層
120・・・垂直ホール
121・・・貫通電極
123・・・後面パッド
200・・・スレーブチップ
Claims (20)
- ウエハーの前面上に第1活性層を含む基板を提供し、
前記第1活性層上にポリマー物質を含む第1モールド層を形成して前記基板に剛性を提供し、
前記第1モールド層を形成した後に、接着剤の使用無しで前記第1モールド層に装置を付着して前記基板が支持された状態で、前記基板の第1後面を除去して前記基板を薄型化し、第2後面を露出させ、
前記薄型化された基板に前記基板に提供された貫通電極と電気的に連結されるパッドを形成することを含み、
前記第1モールド層は、前記基板が薄型化の間に曲がらないように、基板に剛性を提供するための所定の厚さを有する、半導体素子の製造方法。 - 前記装置は、前記装置が前記第1モールド層に接着されないまま、前記第1モールド層に付着される請求項1に記載の半導体素子の製造方法。
- 前記装置は、前記装置と前記第1モールド層との間に接着剤を使用せずに、前記第1モールド層に付着される請求項1に記載の半導体素子の製造方法。
- 前記基板の第1後面を薄型化することは、
機械的な工程を使用して前記第1後面を除去することを含む請求項1に記載の半導体素子の製造方法。 - 前記基板の第1後面を薄型化することは、
前記基板の第1後面をグラインディングすることを含む請求項1に記載の半導体素子の製造方法。 - 前記薄型化された基板内に前記貫通電極を形成することをさらに含む請求項4に記載の半導体素子の製造方法。
- 前記薄型化された基板の第2後面上にチップを積層することをさらに含み、
前記チップの活性面は、前記薄型化された基板の第2後面に向かう請求項6に記載の半導体素子の製造方法。 - 前記チップ上に前記チップをモールディングする第2モールド層を形成して前記基板に剛性を付し、
前記第2モールド層を形成した後に前記第1モールド層の少なくとも一部を除去して滑らかで平坦な面を形成することをさらに含む請求項7に記載の半導体素子の製造方法。 - 前記第1及び第2モールド層と前記基板とをカッティングして半導体パッケージを形成することをさらに含み、
前記半導体パッケージの第1モールド層の幅、前記半導体パッケージの第2モールド層の幅、及び前記半導体パッケージの基板の幅の中でいずれか1つは、前記チップの幅に比べて大きい請求項8に記載の半導体素子の製造方法。 - 前記半導体パッケージの第1モールド層の幅、前記半導体パッケージの第2モールド層の幅、及び前記半導体パッケージの基板の幅は、同一である請求項9に記載の半導体素子の製造方法。
- 前記第2モールド層は、前記チップと前記基板との間に配置されない請求項9に記載の半導体素子の製造方法。
- 前記基板を薄型化する時、前記装置は、前記第1モールド層と直接接触して支持する真空チャックである請求項1に記載の半導体素子の製造方法。
- 前記第1モールド層の少なくとも一部を除去する時、前記第2モールド層は、真空チャックに直接接触して支持される請求項8に記載の半導体素子の製造方法。
- 前記第1モールド層の熱膨張係数CTEと前記基板の熱膨張係数CTEとは、1つの桁程度(an order of magnitude)の範囲である請求項1に記載の半導体素子の製造方法。
- 前記第1モールド層の熱膨張係数CTEと前記基板の熱膨張係数CTEとの比は、3乃至1である請求項1に記載の半導体素子の製造方法。
- 前記第1活性層は、回路層である請求項1に記載の半導体素子の製造方法。
- ウエハーの前面上に提供された第1活性層を含む基板を提供し、
前記第1活性層上にポリマー物質を含む第1モールド層を形成して前記基板に剛性を付し、
前記第1モールド層を形成した後に、前記基板の第1後面を除去して前記基板を薄型化し、第2後面を露出させ、
前記薄型化された基板内に前記第1活性層と電気的に連結される貫通電極を形成し、
前記薄型化された基板上に前記基板内に提供された前記貫通電極と電気的に連結されるパッドを形成することを
含み、
前記第1モールド層の熱膨張係数CTEと前記基板の熱膨張係数CTEとは、1つの桁程度(an order of magnitude)の範囲である、半導体素子の製造方法。 - 前記第1モールド層は、装置が前記第1モールド層に接着されないまま、前記装置に付着される、請求項17に記載の半導体素子の製造方法。
- 前記第1モールド層は、装置と前記第1モールド層との間に接着剤を使用せずに、前記装置に付着される、請求項17に記載の半導体素子の製造方法。
- 前面上に第1活性層を含む基板を提供し、
前記第1活性層上に第1モールド層を形成して前記基板に剛性を提供し、
前記第1モールド層を形成した後に、前記基板の第1後面を除去して前記基板を薄型化し、第2後面を露出させ、
前記薄型化された基板内に前記第1活性層と電気的に連結される貫通電極を形成し、
前記薄型化された基板に前記基板内に提供された前記貫通電極と電気的に連結されるパッドを形成し、
前記薄型化された基板の第2後面上に、チップの活性面が前記薄型化された基板の第2後面に向かう前記チップを積層すること含み、
前記基板が薄型化されるときに接着剤の使用無しで装置に前記第1モールド層を付着して、前記基板が支持され、
前記第1モールド層の幅、及び前記基板の幅は、同一である、半導体素子の製造方法。
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