TW202116126A - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TW202116126A TW202116126A TW109128498A TW109128498A TW202116126A TW 202116126 A TW202116126 A TW 202116126A TW 109128498 A TW109128498 A TW 109128498A TW 109128498 A TW109128498 A TW 109128498A TW 202116126 A TW202116126 A TW 202116126A
- Authority
- TW
- Taiwan
- Prior art keywords
- rotating member
- substrate
- support pins
- processing apparatus
- aforementioned
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/041—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
- B08B5/023—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
一種基板處理裝置,係以處理液處理基板,並包含以下要素:旋轉構件,係形成有複數個貫通口;複數根支撐銷,係以非密封構造安裝於複數個前述貫通口,用以將前述基板離開地支撐;供給噴嘴,係對前述基板供給處理液;罩蓋,係離開地配置於前述旋轉構件的下方;旋轉驅動機構,係在水平面內旋轉驅動前述旋轉構件;以及驅動機構,係驅動複數根前述支撐銷。
Description
本發明係有關於一種基板處理裝置,係對半導體晶圓、液晶顯示器或者有機EL(electroluminescence;電致發光)顯示裝置用基板、光罩(photomask)用基板、光碟用基板、磁碟用基板、陶瓷基板、太陽電池用基板等基板(以下簡稱為基板)進行處理液所為的處理。
以往,作為此種裝置,有一種具備載置台、供給噴嘴以及複數根支撐銷之裝置。例如,參照日本特開2019-46985號公報(圖6)。載置台係可旋轉地支撐基板。複數根支撐銷係豎立地設置於載置台的上表面的外周側。複數根支撐銷係支撐基板的外周緣。供給噴嘴係對被支撐於載置台的基板供給處理液。
複數根支撐銷係插通於形成在載置台的貫通口。複數根支撐銷係具備升降銷。升降銷係在傳遞位置與保持位置之間升降,傳遞位置為已從載置台的上表面離開之位置,保持位置為比傳遞位置還接近載置台的上表面之位置。從保持著基板的狀態下從供給噴嘴對載置台供給處理液。流下至載置台的處理液係於支撐銷與貫通口之間的間隙流動並浸入至載置台的內部。於是,會有用以升降支撐銷之驅動零件因為處理液而損壞之虞。因此,於被支撐銷插通之載置台的貫通口安裝有O形環(o-ring)等密封(seal)構件。
然而,在具有此種構成之習知例子的情形中存在下述問題。
亦即,以往的裝置的密封構件所造成的支撐銷的滑動阻抗非常大。因此,用以驅動支撐銷之驅動零件係需要增大驅動力。用以驅動支撐銷之驅動零件係需要增加驅動零件的數量。此外,需要連結複數根支撐銷以提高被驅動零件升降的連結構件的強度。因此,會成為妨礙基板處理裝置的成本降低之原因。
本發明有鑑於此種問題而研創,目的在於提供一種能藉由將支撐銷作成非密封構造來降低成本之基板處理裝置。
為了達成此種目的,本發明採用下述構成。
本發明為一種基板處理裝置,係以處理液處理基板,並包含以下要素:旋轉構件,係對前述處理液具有耐受性,且具有比前述基板的直徑還大的直徑,並在外周側形成有上表面與下表面連通之複數個貫通口;複數根支撐銷,係對前述處理液具有耐受性,且以非密封構造安裝於複數個前述貫通口,用以將前述基板的下表面從前述旋轉構件的上表面離開地支撐;供給噴嘴,係對在前述旋轉構件的上表面被複數根前述支撐銷支撐的前述基板供給前述處理液;罩蓋(cover),係對前述處理液具有耐受性,且從前述旋轉構件的下表面離開地配置於前述旋轉構件的下方;旋轉驅動機構,係配置於前述罩蓋內,用以在水平面內旋轉驅動前述旋轉構件;以及驅動機構,係配置於前述罩蓋內,用以驅動複數根前述支撐銷。
依據本發明,安裝於旋轉構件的貫通口之複數根支撐銷係以非密封構造被安裝。因此,從供給噴嘴所供給的處理液係通過旋轉構件的貫通口與複數根支撐銷之間的間隙浸入至旋轉構件的下表面。然而,罩蓋的上側對處理液具有耐受性且旋轉驅動機構以及驅動機構被罩蓋覆蓋,因此不會受到處理液所導致的不良影響。此外,能藉由非密封構造減小滑動阻抗並減小驅動負荷。因此,驅動機構無須增大驅動力且無須提高用於驅動之構件的剛性等,因此能降低基板處理裝置的成本。
此外,本發明較佳為:將複數根前述支撐銷中的一部分的複數根前述支撐銷作為升降銷;並且具備:連結構件,係在前述旋轉構件的下方連結複數根前述升降銷;前述驅動機構係經由前述連結構件在傳遞位置與支撐位置之間升降驅動複數根前述升降銷,前述傳遞位置係用以傳遞前述基板之位置,前述支撐位置係比前述傳遞位置還低之位置。
驅動機構係經由連結構件將升降銷予以升降。然而,由於藉由非密封構造降低驅動負荷,因此能比以往還減低連結構件的剛性。
此外,本發明較佳為:前述驅動機構係具備被進退驅動的作動軸,在前述作動軸移動至前述傳遞位置時前述作動軸的上端係抵接至前述連結構件,在前述作動軸移動至前述支撐位置時前述作動軸的上端係從前述連結構件離開;並且具備:磁鐵,在前述連結構件從前述傳遞位置移動至前述支撐位置時,藉由磁力將前述連結構件朝下方吸引。
在移動至傳遞位置時,作動軸係將連結構件抬起;在移動至支撐位置時,作動軸係從連結構件離開。藉此,連結構件以及複數根支撐銷係藉由自身重量而下降。此時,連結構件係被磁鐵朝下方吸引。因此,能迅速地從傳遞位置朝支撐位置移動。
此外,本發明較佳為:前述旋轉構件係具備:周面構件,係下表面呈開放,且具有下端部,前述下端部係從前述周面構件的外周面朝下方伸出並從前述罩蓋的上表面朝上方離開。
能防止通過旋轉構件的貫通口朝旋轉構件的下方浸入的處理液朝側方飛散。此外,由於下表面呈開放,因此能容易地進行旋轉構件的維護(maintenance)。
此外,本發明較佳為具備:洗淨噴嘴,係朝前述周面構件的內部供給洗淨液。
從洗淨噴嘴供給洗淨液,去除浸入至旋轉構件的下方的處理液。藉此,能將在旋轉構件的下表面以及周面構件的內部所構成的空間內部予以潔淨化。
此外,本發明較佳為:進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體;對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
藉由氣體供給機構供給氣體,能使複數根支撐銷作為柏努利(Bernoulli)式夾具(chuck)而作動。因此,能藉由複數根支撐銷的保持力以及朝向旋轉構件之側的吸引力確實地保持基板。
以下,參照圖式說明本發明的實施例之一。
圖1係顯示實施例的基板處理裝置的概略構成之整體構成圖。圖2係顯示保持單元的一部分之縱剖視圖。
實施例的基板處理裝置係例如以水平姿勢保持基板W並進行處理液所為之處理。基板處理裝置係具備保持單元1、罩殼3、飛散防止罩5、處理液供給系統7、下方供給系統9以及洗淨液供給系統11。
俯視觀看時屬於保持單元1所保持的處理對象之基板W係呈例如圓形狀。保持單元1係具備旋轉構件13、複數根(例如六根)支撐銷15、周面構件17、連結構件19、導引銷(guide pin)21、上部磁鐵23、磁鐵保持構件25、下部磁鐵27以及旋轉軸29。
旋轉構件13係呈比基板W的直徑還大的大直徑的圓形狀。具體而言,旋轉構件13的直徑較佳為基板W的直徑的1.05倍至1.2倍左右。旋轉構件13係被電動馬達45旋轉驅動。旋轉構件13係被飛散防止罩5圍繞周圍。因此,當旋轉構件13過大時,會產生需要將電動馬達45設定成高驅動力之情形且會產生需要將飛散防止罩5增大之情形,故裝置的成本會變高。於旋轉構件13的外周側形成有連通至上表面以及下表面之貫通口31。貫通口31係形成於旋轉構件13的複數個部位(例如六個部位)。於貫通口31未夾設有O形環等密封構件。亦即,貫通口31係以非密封構造被支撐銷15插通。支撐銷15係由對處理液具備耐受性的樹脂材料所構成。作為樹脂材料,能例舉例如屬於氟系的樹脂之PTFE(polytetrafluoroethylene;聚四氟乙烯)、PFA(tetrafluoroethylene-par fluoro alkyl vinyl ether copolymer;四氟乙烯共聚合物)或者PCTFE(polymonochlorotrifluoroethyle;聚三氟氯乙烯)等。此種樹脂材料即使不是氟系的樹脂,只要是對從後述的處理液供給系統7所供給的處理液具備耐受性之樹脂材料即可。各個支撐銷15係呈具有比旋轉構件13的厚度還長之長軸的圓柱形狀。於各個支撐銷15的上表面具備突起15a,突起15a係規定限制朝向基板W的水平方向的移動。各個支撐銷15的外徑係形成為比貫通口31的內徑還稍微小的小直徑。
各個支撐銷15的下端部係連結於連結構件19。俯視觀看時連結構件19係呈環狀,於連結構件19中之俯視觀看時未存在支撐銷15之部位的一部分係被複數根導引銷21插通。複數根導引銷21的上部係安裝於旋轉構件13的下表面,於複數根導引銷21下部係形成有凸緣(flange)21a。因此,連結構件19係被導引銷21的凸緣21a規定限制下降位置。連結構件19以及/或者複數根導引銷21係藉由上述的氟樹脂將不鏽鋼等金屬材料予以模製(mold)而成。藉此,連結構件19以及/或者複數根導引銷21係具有耐藥品性。此外,旋轉構件13係由不鏽鋼等金屬材料所構成。藉由上述的氟樹脂等塗布(coating)旋轉構件13的下表面以及/或者內周面。藉此,旋轉構件13係具有耐藥品性。
於連結構件19的下表面的一部分安裝有上部磁鐵23。於連結構件19的下方以從上部磁鐵23離開之方式安裝有磁鐵保持構件25。磁鐵保持構件25的高度位置係被固定。於磁鐵保持構件25中之與上部磁鐵23對向之上表面安裝有下部磁鐵27。上部磁鐵23與下部磁鐵27係以彼此吸引的極性對向之方式安裝。亦即,當上部磁鐵23的下表面為S極時,則下部磁鐵27的上表面以成為N極之方式安裝。上部磁鐵23、下部磁鐵27以及磁鐵保持構件25係由上述的氟樹脂模製而成。藉此,上部磁鐵23、下部磁鐵27以及磁鐵保持構件25係具有耐藥品性。
雖然經由連結構件19將複數根支撐銷15予以升降,然而複數根支撐銷15係以非密封構造安裝於旋轉構件13。因此,經由連結構件19之複數根支撐銷15的驅動負荷變小。因此,與以往相比,能以低剛性來構成連結構件19。
旋轉軸29的前端部係安裝於旋轉構件13。旋轉軸29係成為雙重筒構造。旋轉軸29的外筒33係被內筒35插通。外筒33的內周面與內筒35的外周面係離開。因此,於旋轉軸29形成有第一流路37以及第二流路39。第一流路37係設置於內筒35的中心。第二流路39係由內筒35的外周面以及外筒33的內周面所構成。於旋轉軸29的上部且為旋轉構件13的旋轉中心安裝有開口蓋41。於開口蓋41的中心部形成有噴出口41a。開口蓋41的下部係形成為朝下方突出的三角形狀。與開口蓋41的下部中之形成為三角形狀之部分對向之內筒35的上表面係形成為朝下方凹陷的三角形狀。此三角形狀為與開口蓋41的三角形狀對應之形狀。這些三角形狀的部分係彼此離開並構成迷宮(labyrinth)構造41b。旋轉軸29係將上述的氟樹脂塗布於不鏽鋼合金等金屬材料而成。藉此,旋轉軸29係具有耐藥品性。
於旋轉構件13的內部形成有流路43。流路43的一端側係連通於第二流路39。流路43的另一端側係連通於旋轉構件13的周邊側的上表面。周邊側的開口為邊緣開口43a。邊緣開口43a係以朝向上方呈傾斜的姿勢所形成。藉此,邊緣開口43a係朝位於支撐位置的高度之支撐銷15的上端部噴吹氣體。
此外,上述的噴出口41a與邊緣開口43a係相當於本發明中的「氣體供給機構」。
旋轉構件13係具備周面構件17。俯視觀看時周面構件17係呈環狀的形狀。周面構件17係從旋轉構件13的外周面側朝向下方伸出。周面構件17的下端部係從罩蓋3的上表面朝上方離開。周面構件17的下表面係具有開口,該開口從下方觀看時大致為圓形狀。周面構件17係防止通過旋轉構件13的貫通口31朝旋轉構件13的下方浸入的處理液朝側方飛散。此外,周面構件17的下表面係呈開放。因此,能容易地維護保持單元1的內部。
罩蓋3係配置於上表面從周面構件17的下端部離開的位置。罩蓋3的至少上表面係例如由上述的氟樹脂所構成。因此,罩蓋3係對從後述的處理液供給系統7所供給的處理液具有耐受性。於罩蓋3的內部係內置有電動馬達45以及升降驅動部47。於罩蓋3的中央部係被旋轉軸29經由密封構件49插通。旋轉軸29係以從電動馬達45的下端部朝下方突出的狀態連結於電動馬達45。當使電動馬達45作動時,旋轉軸29係繞著軸心P旋轉。於罩蓋3的上表面的外周側配置有升降驅動部47。升降驅動部47係例如由汽缸(air cylinder)等制動器(actuator)所構成。升降驅動部47係具備作動軸51。作動軸51的長軸係朝向鉛直方向。作動軸51係經由密封構件53插通至罩蓋3。當升降驅動部47作動時,作動軸51係以上端從升降驅動部47離開之方式伸長。當升降驅動部47被設定成非作動時,作動軸51係以上端接近升降驅動部47之方式收縮。在升降驅動部47被設定成非作動的狀態下,作動軸51的上端係從連結構件19的下表面稍微離開。在升降驅動部47被設定成非作動的狀態下容許連結構件19的下降,且容許支撐銷15下降至支撐位置。此外,在升降驅動部47作動的狀態下,作動軸51的上端係抵接至連結構件19的下表面且抬起連結構件19。藉此,作動軸51係將支撐銷15抬起至傳遞位置。
上述的作動軸51係例如由不鏽鋼所構成。作動軸51係例如被氟樹脂、PBI(聚苯并咪唑)、EFEP(perfluoroethylenepropene copolymer;四氟乙烯-乙烯共聚物,亦即四氟乙烯(tetrafluoroethylene)與乙烯(ethylene)的共聚物)等塗布而成。藉此,作動軸51係具有耐藥品性。此外,亦可藉由PEEK(polyetheretherketone;聚醚醚酮)構成作動軸51。在此情形中,作動軸51係被塗布上述的氟樹脂等而成。
於罩蓋3中之從上表面朝下方傾斜的側面配置有洗淨噴嘴55。洗淨噴嘴55的長軸係朝向周面構件17的開口部。於罩蓋3以及保持單元1的側方配置有飛散防止罩5。飛散防止罩5係回收從保持單元1朝周圍飛散的處理液。此外,飛散防止罩5係回收浸入至保持單元1的內部的處理液。再者,飛散防止罩5係回收從洗淨噴嘴55供給至保持單元1且飛散的洗淨液。
處理液供給系統7係具備供給噴嘴57、處理液供給部59、配管61以及控制閥63。於保持單元1的上方且為軸心P的軸線上配置有供給噴嘴57。供給噴嘴57係構成為可於未圖示的待機位置與圖1所示的供給位置之間移動。處理液供給部59係儲留用以洗淨基板W的洗淨液。洗淨液係例如為純水、SC1(Standard clean-1;第一標準清洗液,亦即氨水與過氧化氫水的混和液)、SC2(Standard clean-2;第二標準清洗液;亦即鹽酸、過氧化氫水以及純水的混合液)或者DHF(dilute hydrofluoric acid;稀釋氫氟酸)等。供給噴嘴57與處理液供給部59係藉由配管61而連通地連接。於配管61安裝有控制閥63。控制閥63係調節配管61的流量以及容許或者阻斷以所設定的流量對於配管61的供給。
下方供給系統9係以下述方式所構成。於旋轉軸29的第一流路37連通地連接有配管65的一端側。配管65的另一端側係連通地連接於處理液供給部67。配管65係具備控制閥69。控制閥69係調整處理液的流量以及控制處理液的供給與阻斷。處理液供給部67係例如可供給與上述的處理液供給部59同樣的處理液。此外,於旋轉軸29的第二流路39連通地連接有配管71的一端側。於氣體供給部73連通地連接有配管71的另一端側。配管71係具備控制閥69。控制閥69係調整氣體的流量以及控制氣體的供給與阻斷。氣體供給部73係供給氣體。氣體較佳為惰性氣體,例如較佳為氮氣。控制閥69、75會有同時被開放之情形。在此情形中,從噴出口41a朝基板W的下表面同時地供給處理液與氣體。此外,在此情形中,從邊緣開口43a朝向基板W的周緣下表面僅供給氣體。
此外,旋轉軸29係採用迷宮構造41b。因此,從噴出口41a供給處理液後,處理液不會進入至第二流路39。因此,即使在從噴出口41a僅供給氣體之情形中,亦不會從噴出口41a對基板W供給先前所供給的處理液。結果,能進行適當的流體供給。
於洗淨液供給系統11的洗淨噴嘴55連通地連接有配管77的一端側。於配管77的另一端側連通地連接有洗淨液供給部79。於配管77安裝有控制閥81。控制閥81係調整洗淨液的流量以及控制洗淨液的供給與阻斷。洗淨液供給部79係將例如純水等作為洗淨液來供給。
於基板處理裝置的底部設置有排液管83,排液管83係例如連通地連接於無塵室(cleaning room)等所具備的排液部。排液管83係排出從處理液供給系統7、下方供給系統9、洗淨液供給系統11所供給的處理液等。
接著,參照圖3以及圖4。圖3係顯示保持單元的一部分且顯示支撐銷位於傳遞位置的狀態之縱剖視圖。圖4係顯示保持單元的一部分並顯示支撐銷位於支撐位置且已旋轉的狀態之縱剖視圖。
在從未圖示的搬運機構接取屬於處理對象的基板W時,使升降驅動部47作動。藉此,如圖3所示,作動軸51上升並抬起連結構件19,使支撐銷15上升至傳遞位置。由於支撐銷15未具有以往般的O形環等密封構件,因此與以往相比上升時的滑動阻抗非常小。因此,使支撐銷15上升時的驅動負荷僅為使支撐銷15與連結構件19等上升之力量以及解除上部磁鐵23以及下部磁鐵27的磁力的吸引力之力量。然而,與具備以往般的O形環等密封構件的構成相比,驅動負荷非常小。如此,在已使複數根支撐銷15上升至傳遞位置的狀態下,從未圖示的搬運機構將基板W載置於複數根支撐銷15。此時,基板W的端緣係被突起15a規定限制水平方向的位置。
接著,將升降驅動部47設定成非作動。藉此,作動軸51係收縮至升降驅動部47之側。於是,如圖4所示,已將連結構件19的下表面抬起的作動軸51的上端係從連結構件19的下表面離開至下方。因此,複數根支撐銷15係藉由加上連結構件19以及上部磁鐵23等的本身重量開始朝下方移動。與此同時,複數根支撐銷15係藉由上部磁鐵23以及下部磁鐵27的磁力所為的吸引而急速地下降。此種下降係在連結構件19到達至導引銷21的凸緣21a之時間點而停止。藉此,複數根支撐銷15的一部分係進入至旋轉構件13的上表面並移動至基板W的下表面已接近至旋轉構件13的上表面之支撐位置。由於連結構件19係被上部磁鐵23以及下部磁鐵27朝下方吸引,因此能使支撐銷15從傳遞位置朝支撐位置迅速地移動。
此外,在此時間點亦可進行定中心(centering)動作,定中心動作係藉由旋轉構件13所具備的定中心銷(未圖示)使基板W的中心與旋轉構件13的旋轉中心一致。在此,為了容易理解本發明,設定成基板W的中心與旋轉構件13的中心大致一致地被載置。
當基板W移動至支撐位置時,控制閥75係被開放。如此,如圖4中以白色三角箭頭線所示,從噴出口41a與邊緣開口43a噴出氮氣。從噴出口41a噴出的氮氣係在基板W的下表面朝向側方改變朝向。接著,該氮氣係於旋轉台13的上表面與基板W的下表面之間的狹窄空間朝向基板W的外周方向高速地流出。再者,從邊緣開口43a噴出的氮氣係在基板W的外周緣下表面朝向側方改變朝向。接著,該氮氣係於旋轉台13與基板W的外周緣下表面之間的狹窄空間高速地流出。該氮氣的流動係產生柏努利效應並於基板W的下表面產生負壓。藉由該負壓,對基板W產生朝向旋轉構件13的上表面側之吸引力,基板W係被吸引至旋轉構件13之側。藉此,能藉由保持單元1穩定地保持基板W。
在基板W被吸引至旋轉構件13之側後,操作電動馬達45,使旋轉軸29開始朝向洗淨旋轉數旋轉。基板W的旋轉數到達至洗淨旋轉數後,使供給噴嘴57移動至軸心P的上方。於此同時,使控制閥63開放。如此,從供給噴嘴57朝向基板W的上表面供給處理液,處理液係藉由離心力在基板W的上表面朝向外周面流出。藉此,藉由處理液洗淨基板W的上表面。當經過預定的處理時間時,關閉控制閥63使供給噴嘴57停止供給處理液。接著,將電動馬達45的旋轉數提升至比洗淨旋轉數還高的乾燥旋轉數。藉此,使附著於基板W以及旋轉台13等的處理液飛散至周圍,從而進行基板W的乾燥處理。飛散至周圍的處理液係被飛散防止罩5回收。預定時間的乾燥處理後,使電動馬達45停止。
當結束乾燥處理時,關閉控制閥75,停止供給氮氣。藉此,解除於基板W的下表面所產生的負壓。接著,當使升降驅動部47作動時,如圖3所示作動軸51係上升並抬起連結構件19,使支撐銷15上升至傳遞位置。接著,藉由未圖示的搬運機構從複數根支撐銷15移載洗淨處理完畢的基板W。
此外,在反復地實施上述的洗淨處理的期間中,處理液係從支撐銷15與貫通口31之間的間隙流下。從旋轉構件13以及周面構件17朝下方流下的處理液係經由位於基板處理裝置的下部的排液管83排出至排液部。未從排液管83排出的處理液係附著於被旋轉構件13以及周面構件17圍繞的空間的構成構件。因此,一邊定期地使電動馬達45旋轉,一邊如圖5所示般使控制閥81開放並從洗淨噴嘴55供給洗淨液。藉此,洗淨液被噴吹至被旋轉構件13以及周面構件17圍繞的空間的構成構件,處理液亦流下至罩蓋3的上表面。藉此,能去除附著於被旋轉構件13以及周面構件17圍繞的空間的構成構件以及罩蓋13的上表面的處理液。因此,下述事情能夠防範未然:已附著的處理液在固著並乾燥後剝離,成為微粒(particle)並污染基板W。
依據本實施例,安裝於旋轉構件13的貫通口31之複數根支撐銷15係以非密封構造被安裝。因此,從供給噴嘴57所供給的處理液係通過旋轉構件13的貫通口31與複數根支撐銷15之間的間隙浸入至旋轉構件13的下表面。然而,電動馬達45與升降驅動部47係被罩蓋3覆蓋,不會受到處理液導致的不良影響。此外,由於採用非密封構造,因此能減小滑動阻抗從而能減小驅動負荷。因此,升降驅動部47係無須增大驅動力且無須提高用以驅動的構件的剛性等,從而能降低基板處理裝置的成本。
本發明係未限定於上述實施形態,能以下述方式進行變化實施。
(1)雖然在上述的實施例中將處理對象單純地設定成基板W,然而亦能應用於用以處理例如殘留最外周的邊緣部分(數mm度)並僅將內周研削並薄化的基板W(亦稱為TAIKO基板)以及全面地薄化的基板W之基板處理裝置。
(2)在上述的實施例中已以於旋轉構件13僅具備支撐銷15的基板處理裝置作為例子進行說明。然而,本發明亦能應用於例如於上述的各個支撐銷15之間具備定中心銷的基板處理裝置。具體而言,能例舉具備定中心機構的基板處理裝置。定中心機構係使定中心銷轉動。在基板W被各個支撐銷15支撐且被移動至支撐位置的狀態下,定中心機構係使定中心銷轉動。於是,基板W的旋轉中心係與旋轉構件13的旋轉中心一致。定中心銷係以可繞著鉛直軸轉動之方式安裝於旋轉構件13,並於從鉛直軸偏心的位置具有對位突起。此外,在此種情形中,以在水平方向中磁極不同之方式於定中心銷的下端部預先安裝磁鐵。再者,於罩殼3的內部配置用以切換磁鐵的磁性之定中心銷驅動部。並且,當使定中心銷驅動部作動時,磁極的切換所導致的磁力的影響係通過罩殼3的上表面傳達至定中心銷的下端部的磁鐵。結果,定中心銷係繞著鉛直軸轉動。針對此種定中心銷,較佳為採用預先塗布上述的氟樹脂且可以非密封構造轉動的構成。
(3)在上述的實施例中,藉由連結構件19總括性地升降驅動複數根支撐銷15。然而,本發明並未限定於此種構成。例如,亦可採用將六根支撐銷15分成兩個群組並總括性地升降驅動各三根支撐銷15的構成。
在上述的實施例中,採用未於連結構件19連結有作動軸51的構成。然而,本發明並未限定於此種構成。例如,亦可採用於連結構件19的下表面連結有作動軸51的上端的構成。在此種情形中,由於能省略上部磁鐵23、下部磁鐵27以及磁鐵保持構件25,因此能降低成本。
(5)在上述的實施例中,於罩殼3具備洗淨噴嘴55。然而,本發明並非是一定需要作成此種構成。此外,並非是於罩殼3本身具備洗淨噴嘴55,只要配置於能對周面構件17的內部供給洗淨液之位置即可。例如,亦可將洗淨噴嘴55配置於罩殼3的外部且為飛散防止罩5的內部的位置。
(6)在上述的實施例中,藉由使氣體高速地噴出至被支撐銷15支撐的基板W的下表面與旋轉構件13的表面之間來產生負壓,從而對基板W產生朝向旋轉構件13之側的吸引力。然而,本發明並未限定於此種柏努利式的夾具。亦即,亦能應用於具備保持單元的基板處理裝置,該保持單元係單純地藉由支撐銷15抵接支撐基板W的外周緣下表面。
在未逸離本發明的精神範圍內或實質性屬性的情形下,本發明可以其他具體形式來實施。因此,本發明的範圍應當參酌隨附的申請專利範圍而非是限定於說明書的記載。
1:保持單元
3:罩殼
5:飛散防止罩
7:處理液供給系統
9:下方供給系統
11:洗淨液供給系統
13:旋轉構件
15:支撐銷
15a:突起
17:周面構件
19:連結構件
21:導引銷
21a:凸緣
23:上部磁鐵
25:磁鐵保持構件
27:下部磁鐵
29:旋轉軸
31:貫通口
33:外筒
35:內筒
37:第一流路
39:第二流路
41:開口蓋
41a:噴出口
41b:迷宮構造
43:流路
43a:邊緣開口
45:電動馬達
47:升降驅動部
49:密封構件
51:作動軸
53:密封構件
55:洗淨噴嘴
57:供給噴嘴
59,67:處理液供給部
61,65,71,77:配管
63,69,75,81:控制閥
73:氣體供給部
79:洗淨液供給部
83:排液管
P:軸心
W:基板
為了說明本發明,圖式中係顯示幾種較佳的實施例,然而本發明並未限定於圖式中所顯示的配置以及構件。
[圖1]係顯示實施例的基板處理裝置的概略構成之整體構成圖。
[圖2]係顯示保持單元的一部分之縱剖視圖。
[圖3]係顯示保持單元的一部分且顯示支撐銷位於傳遞位置的狀態之縱剖視圖。
[圖4]係顯示保持單元的一部分並顯示支撐銷位於支撐位置且已旋轉的狀態之縱剖視圖。
[圖5]係顯示正在洗淨保持單元內部的狀態之圖。
1:保持單元
3:罩殼
5:飛散防止罩
7:處理液供給系統
9:下方供給系統
11:洗淨液供給系統
13:旋轉構件
15:支撐銷
15a:突起
17:周面構件
19:連結構件
21:導引銷
23:上部磁鐵
25:磁鐵保持構件
27:下部磁鐵
29:旋轉軸
31:貫通口
33:外筒
35:內筒
45:電動馬達
47:升降驅動部
49:密封構件
51:作動軸
53:密封構件
55:洗淨噴嘴
57:供給噴嘴
59,67:處理液供給部
61,65,71,77:配管
63,69,75,81:控制閥
73:氣體供給部
79:洗淨液供給部
83:排液管
P:軸心
W:基板
Claims (18)
- 一種基板處理裝置,係以處理液處理基板,並包含以下要素: 旋轉構件,係對前述處理液具有耐受性,且具有比前述基板的直徑還大的直徑,並在外周側形成有上表面與下表面連通之複數個貫通口; 複數根支撐銷,係對前述處理液具有耐受性,且以非密封構造安裝於複數個前述貫通口,用以將前述基板的下表面從前述旋轉構件的上表面離開地支撐; 供給噴嘴,係對在前述旋轉構件的上表面被複數根前述支撐銷支撐的前述基板供給前述處理液; 罩蓋,係對前述處理液具有耐受性,且從前述旋轉構件的下表面離開地配置於前述旋轉構件的下方; 旋轉驅動機構,係配置於前述罩蓋內,用以在水平面內旋轉驅動前述旋轉構件;以及 驅動機構,係配置於前述罩蓋內,用以驅動複數根前述支撐銷。
- 如請求項1所記載之基板處理裝置,其中將複數根前述支撐銷中的一部分的複數根前述支撐銷作為升降銷; 前述基板處理裝置係具備:連結構件,係在前述旋轉構件的下方連結複數根前述升降銷; 前述驅動機構係經由前述連結構件在傳遞位置與支撐位置之間升降驅動複數根前述升降銷,前述傳遞位置係用以傳遞前述基板之位置,前述支撐位置係比前述傳遞位置還低之位置。
- 如請求項1所記載之基板處理裝置,其中前述驅動機構係具備被進退驅動的作動軸,在前述作動軸移動至前述傳遞位置時前述作動軸的上端係抵接至前述連結構件,在前述作動軸移動至前述支撐位置時前述作動軸的上端係從前述連結構件離開; 並且具備:磁鐵,在前述連結構件從前述傳遞位置移動至前述支撐位置時,藉由磁力將前述連結構件朝下方吸引。
- 如請求項1所記載之基板處理裝置,其中前述旋轉構件係具備:周面構件,係下表面呈開放,且具有下端部,前述下端部係從前述周面構件的外周面朝下方伸出並從前述罩蓋的上表面朝上方離開。
- 如請求項2所記載之基板處理裝置,其中前述旋轉構件係具備:周面構件,係下表面呈開放,且具有下端部,前述下端部係從前述周面構件的外周面朝下方伸出並從前述罩蓋的上表面朝上方離開。
- 如請求項3所記載之基板處理裝置,其中前述旋轉構件係具備:周面構件,係下表面呈開放,且具有下端部,前述下端部係從前述周面構件的外周面朝下方伸出並從前述罩蓋的上表面朝上方離開。
- 如請求項4所記載之基板處理裝置,其中具備:洗淨噴嘴,係朝前述周面構件的內部供給洗淨液。
- 如請求項5所記載之基板處理裝置,其中具備:洗淨噴嘴,係朝前述周面構件的內部供給洗淨液。
- 如請求項6所記載之基板處理裝置,其中具備:洗淨噴嘴,係朝前述周面構件的內部供給洗淨液。
- 如請求項1所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項2所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項3所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項4所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項5所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項6所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項7所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項8所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
- 如請求項9所記載之基板處理裝置,其中進一步具備:氣體供給機構,係對前述旋轉構件與被複數根前述支撐銷支撐的前述基板的下表面之間供給氣體; 對被複數根前述支撐銷支撐的前述基板產生朝向前述旋轉構件之側的吸引力。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-171517 | 2019-09-20 | ||
JP2019171517A JP7370201B2 (ja) | 2019-09-20 | 2019-09-20 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202116126A true TW202116126A (zh) | 2021-04-16 |
TWI750776B TWI750776B (zh) | 2021-12-21 |
Family
ID=74876632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109128498A TWI750776B (zh) | 2019-09-20 | 2020-08-21 | 基板處理裝置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210086236A1 (zh) |
JP (1) | JP7370201B2 (zh) |
KR (1) | KR102425864B1 (zh) |
CN (1) | CN112542419B (zh) |
TW (1) | TWI750776B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI825994B (zh) * | 2021-09-22 | 2023-12-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6979935B2 (ja) * | 2018-10-24 | 2021-12-15 | 三菱電機株式会社 | 半導体製造装置および半導体製造方法 |
KR20210157574A (ko) * | 2020-06-22 | 2021-12-29 | 주식회사 제우스 | 기판처리장치 |
CN118080074B (zh) * | 2024-04-18 | 2024-06-28 | 哈尔滨学院 | 一种食品研磨机 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263324A (ja) * | 1994-03-17 | 1995-10-13 | Dainippon Screen Mfg Co Ltd | 吸引チャック式基板回転処理装置 |
TW459266B (en) * | 1997-08-27 | 2001-10-11 | Tokyo Electron Ltd | Substrate processing method |
JP3621568B2 (ja) * | 1997-09-26 | 2005-02-16 | 大日本スクリーン製造株式会社 | 基板洗浄装置 |
JP3973344B2 (ja) * | 2000-04-27 | 2007-09-12 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP3816734B2 (ja) | 2000-09-13 | 2006-08-30 | 東京エレクトロン株式会社 | 基板洗浄装置 |
JP3904406B2 (ja) * | 2001-04-17 | 2007-04-11 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2005019701A (ja) * | 2003-06-26 | 2005-01-20 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2005135940A (ja) * | 2003-10-28 | 2005-05-26 | Okamoto Machine Tool Works Ltd | 半導体ウエハのユニバ−サルチャック機構およびウエハ取付板 |
US7055229B2 (en) * | 2003-12-31 | 2006-06-06 | Intel Corporation | Support system for semiconductor wafers and methods thereof |
JP4460334B2 (ja) * | 2004-03-12 | 2010-05-12 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4349952B2 (ja) * | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | ウェハ支持部材とその製造方法 |
JP2005317749A (ja) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | 半導体製造装置用保持体及びそれを搭載した半導体製造装置 |
JP2008130948A (ja) | 2006-11-24 | 2008-06-05 | Dainippon Screen Mfg Co Ltd | 基板保持装置およびそれを備える基板処理装置 |
EP2051285B1 (en) * | 2007-10-17 | 2011-08-24 | Ebara Corporation | Substrate cleaning apparatus |
JP5242242B2 (ja) | 2007-10-17 | 2013-07-24 | 株式会社荏原製作所 | 基板洗浄装置 |
US20110222038A1 (en) * | 2008-09-16 | 2011-09-15 | Tokyo Electron Limited | Substrate processing apparatus and substrate placing table |
JP5090299B2 (ja) | 2008-09-16 | 2012-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置および基板載置台 |
JP2010080583A (ja) * | 2008-09-25 | 2010-04-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5661597B2 (ja) * | 2011-11-14 | 2015-01-28 | 東京エレクトロン株式会社 | 基板保持体の再生方法 |
JP5646528B2 (ja) * | 2012-03-09 | 2014-12-24 | 東京エレクトロン株式会社 | 液処理装置 |
CN104538345B (zh) * | 2014-12-31 | 2017-06-06 | 北京七星华创电子股份有限公司 | 一种盘状物夹持旋转装置 |
JP6352827B2 (ja) | 2015-02-12 | 2018-07-04 | 株式会社テックインテック | 基板処理装置 |
JP6503194B2 (ja) * | 2015-02-16 | 2019-04-17 | 株式会社Screenホールディングス | 基板処理装置 |
JP6322255B2 (ja) * | 2016-10-21 | 2018-05-09 | 株式会社プレテック | ウェーハ保持装置及びウェーハ処理装置 |
JP6770886B2 (ja) | 2016-12-28 | 2020-10-21 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP6804325B2 (ja) * | 2017-02-09 | 2020-12-23 | 東京エレクトロン株式会社 | 液処理装置 |
JP6948889B2 (ja) | 2017-09-04 | 2021-10-13 | 株式会社Screenホールディングス | 基板保持装置 |
JP7179466B2 (ja) * | 2018-02-13 | 2022-11-29 | 株式会社Screenホールディングス | 基板処理装置 |
-
2019
- 2019-09-20 JP JP2019171517A patent/JP7370201B2/ja active Active
-
2020
- 2020-08-21 CN CN202010848063.8A patent/CN112542419B/zh active Active
- 2020-08-21 TW TW109128498A patent/TWI750776B/zh active
- 2020-09-01 KR KR1020200110974A patent/KR102425864B1/ko active IP Right Grant
- 2020-09-10 US US17/016,438 patent/US20210086236A1/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI825994B (zh) * | 2021-09-22 | 2023-12-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN112542419B (zh) | 2024-03-22 |
JP2021048363A (ja) | 2021-03-25 |
JP7370201B2 (ja) | 2023-10-27 |
KR102425864B1 (ko) | 2022-07-27 |
TWI750776B (zh) | 2021-12-21 |
CN112542419A (zh) | 2021-03-23 |
KR20210034491A (ko) | 2021-03-30 |
US20210086236A1 (en) | 2021-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW202116126A (zh) | 基板處理裝置 | |
US11031235B2 (en) | Substrate processing apparatus | |
KR101426999B1 (ko) | 기판 유지 회전 장치 및 이것을 구비한 기판 처리 장치, 및 기판 처리 방법 | |
JP6143572B2 (ja) | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 | |
KR100979979B1 (ko) | 액처리 장치 및 액처리 방법 | |
CN101499412B (zh) | 基板处理装置及基板处理方法 | |
US9620393B2 (en) | Substrate treatment apparatus and substrate treatment method | |
KR20140113450A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP6461617B2 (ja) | 基板処理装置 | |
JP6758587B2 (ja) | 基板支持装置 | |
JP2016072343A (ja) | 基板処理装置および基板処理方法 | |
US8444772B2 (en) | Liquid processing apparatus | |
JP6016514B2 (ja) | 基板処理装置 | |
JP4926931B2 (ja) | 基板処理装置および基板処理方法 | |
JP2003324090A (ja) | 基板処理装置 | |
JP2017069264A (ja) | 基板保持装置 | |
JP2014049565A (ja) | 基板処理装置および基板処理方法 | |
TWI723240B (zh) | 基板支撐裝置 | |
JP4926932B2 (ja) | 基板処理装置および基板処理方法 | |
JP2015230921A (ja) | 基板処理装置 | |
JP5990073B2 (ja) | 基板処理装置 |