TW202109708A - 晶舟處理裝置、立式分批熔爐及方法 - Google Patents
晶舟處理裝置、立式分批熔爐及方法 Download PDFInfo
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- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- F27B17/00—Furnaces of a kind not covered by any preceding group
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- F27B17/0033—Chamber type furnaces the floor of the furnaces consisting of the support carrying the charge, e.g. car type furnaces
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- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D3/0084—Charging; Manipulation of SC or SC wafers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- F27—FURNACES; KILNS; OVENS; RETORTS
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- F27D15/00—Handling or treating discharged material; Supports or receiving chambers therefor
- F27D15/02—Cooling
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D3/00—Charging; Discharging; Manipulation of charge
- F27D2003/0034—Means for moving, conveying, transporting the charge in the furnace or in the charging facilities
- F27D2003/0075—Charging or discharging vertically, e.g. through a bottom opening
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F27D9/00—Cooling of furnaces or of charges therein
- F27D2009/007—Cooling of charges therein
- F27D2009/0072—Cooling of charges therein the cooling medium being a gas
- F27D2009/0075—Cooling of charges therein the cooling medium being a gas in direct contact with the charge
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
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- F27D9/00—Cooling of furnaces or of charges therein
- F27D2009/007—Cooling of charges therein
- F27D2009/0094—Cooling of charges therein making use of already cooled material, e.g. forming a layer
Abstract
一種晶舟處理裝置,其經組配以定位於一立式分批熔爐之一加工腔室下。該晶舟處理裝置包含:一主外殼,其具有界定及界限一晶舟處理空間之一壁;及一舟輸送器,其包含用於支撐一晶舟之至少一個晶舟支撐件,且經組配以將該晶舟輸送至該晶舟處理空間內之一冷卻位置。該壁之鄰近該冷卻位置的一部分為具有至少0.60之一熱輻射表面吸收比的一壁部分,以便藉由熱輻射吸收比抽吸來自在該冷卻位置中的該晶舟之熱量。
Description
本揭露內容大體係關於一種晶舟處理裝置。該晶舟處理裝置可經組配以定位於一立式分批熔爐之一加工腔室下,以用於加工容納於一晶舟中之多個晶圓。本揭露內容此外係關於一種包含該晶舟處理裝置之立式分批熔爐總成。本揭露內容亦係關於一種用於冷卻該晶舟處理裝置中之一晶舟之方法。
發明背景
可經組配以定位於一立式分批熔爐之一加工腔室下的晶舟處理裝置可用於加工容納於一晶舟中之多個晶圓。晶舟處理裝置可經組配以立式輸送晶舟至該分批熔爐之一加工腔室,且接收來自該加工腔室之晶舟。自分批熔爐接收之晶舟可為熱的,且在可自晶舟取出經加工晶圓前,可能需要在一冷卻位置冷卻。
在晶舟處理裝置中,此冷卻可藉由空氣或氣體之流通來改良,空氣或氣體可藉由使用熱交換器來冷卻。
發明概要
提供本發明內容以按一簡化形式介紹概念之選擇。此等概念進一步詳細地描述於以下揭露內容之實施實施例之詳細描述中。此發明內容並不意欲識別所主張標的之關鍵特徵或必要特徵,亦不意欲用以限制所主張標的之範疇。
提供一種冷卻晶舟之改良之晶舟處理裝置可為一目標。
鄰近冷卻位置的壁之部分可典型地由不銹鋼製成,不銹鋼可具有0.3至0.4之熱輻射表面吸收比。該熱輻射表面吸收比為吸收之熱輻射對入射熱輻射之比率。藉由使壁之一部分具有0.3至0.4之一熱輻射表面吸收比,入射熱量之大部分可遠離該壁反射回至晶舟,此可能不幫助冷卻晶舟。
為此目的,可提供一種晶舟處理裝置。更特定言之,可提供一種晶舟處理裝置,其經組配以定位於一立式分批熔爐之一加工腔室下。該晶舟處理裝置可包含一主外殼,及一舟輸送器。該主外殼可具有界定且界限一晶舟處理空間之一壁。該舟輸送器可包含用於支撐一晶舟之至少一個晶舟支撐件,且可經組配以將該晶舟輸送至該晶舟處理空間內之一冷卻位置。該壁之鄰近該冷卻位置的一部分可為具有至少0.60之一熱輻射表面吸收比的一壁部分,以便藉由熱輻射吸收比吸收來自在該冷卻位置中的該晶舟之熱量。該熱輻射表面吸收比為吸收之熱輻射對入射熱輻射之比率。
由於該壁部分具有至少0.60之熱輻射表面吸收比,因此可極大地減少輻射熱量之反射。結果,該晶舟可更快速地冷卻。此意謂,該晶舟中之該等經加工晶圓可較早地取出,且該晶舟處理裝置更高效地運作。
根據再一實施例,提供一種立式分批熔爐組成,其包含用於加工容納於一晶舟中之晶圓的一加工腔室及根據本發明之一晶舟處理裝置。該晶舟處理裝置定位於該加工腔室下。該立式分批熔爐進一步包含一立式晶舟提升總成,其經組配以將一晶舟自該晶舟處理裝置轉移至該加工腔室,且反之亦然。
該立式分批熔爐可具有與以上已關於該晶舟處理裝置描述之優勢相同的優勢。
最後,本發明提供一種用於冷卻一晶舟處理裝置中之一晶舟之方法。更特定言之,該方法包含:提供根據本發明之一晶舟處理裝置,在該晶舟處理裝置之該至少一個晶舟支撐件上提供一晶舟,將該晶舟輸送至該冷卻位置,及藉由該壁部分吸收來自該晶舟之熱輻射。
該方法具有與以上已關於晶舟處理裝置及立式分批熔爐描述之優勢相同的優勢。
為了總結本發明及較之先前技術達成之優勢的目的,上文已描述本發明之某些目標及優勢。當然,應理解,未必可根據本發明之任一特定實施例達成所有此等目標或優勢。因此,舉例而言,熟習此項技術者將認識到,本發明可以達成或最佳化如本文中教示或建議之一個優勢或一群優勢而不必達成如可在本文中教示或建議之其他目標或優勢的一方式來體現或進行。
在附屬申請專利範圍中主張各種實施例,將進一步參考在圖中展示之一實例來闡釋實施例。該等實施例可加以組合或可相互分開來應用。
所有此等實施例意欲在本文中揭露的本發明之範疇內。自具有對附圖之參考的某些實施例之以下詳細描述,此等及其他實施例將變得易於對熟習此項技術者顯而易見,本發明不限於揭露之任一(何)特定實施例。
在本申請中,類似或對應的特徵由類似或對應的參考標記表示。各種實施例之描述不限於在圖中展示之實例,且在詳細描述及申請專利範圍中使用之參考編號並不意欲限制實施例之描述,而是經包括以藉由參考在圖中展示之實例來闡釋該等實施例。
雖然以下揭露了某些實施例及實例,但熟習此項技術者應理解,本發明延伸超出具體揭露之實施例及/或本發明及其明顯修改及等效物之使用。因此,意欲揭露的本發明之範疇不應受到以下描述的特定揭露之實施例限制。本文中提出之繪示並不意謂為任一特定材料、結構或裝置之實際視圖,而是僅為用以描述本揭露內容之實施例的理想化之表示。
如本文中使用,術語「晶圓」可指可使用或可在其上形成裝置、電路或薄膜之任何一或多種基礎材料。
更一般而言,本揭露內容提供一種晶舟處理裝置10,其經組配以定位於一立式分批熔爐之一加工腔室下。該立式分批熔爐可經組配用於加工容納於一晶舟12中之多個晶圓。該晶舟處理裝置10可包含一主外殼,及一舟輸送器20。該主外殼14可具有界定且界限一晶舟處理空間18之一壁16。該舟輸送器20可包含用於支撐一晶舟12之至少一個晶舟支撐件22,且可經組配以將該晶舟12輸送至該晶舟處理空間18內之一冷卻位置24。該壁之鄰近該冷卻位置24的一部分包含具有至少0.6之一熱輻射表面吸收比的一壁部分26,以便藉由熱輻射吸收比抽吸來自該晶舟12之熱量。該熱輻射表面吸收比為吸收之熱輻射對入射熱輻射之比率。壁部分26可來自金屬。
鄰近冷卻位置之壁部分26可具有在0.6與0.99之間的一熱輻射表面吸收比。該熱輻射表面吸收比可隨晶舟之溫度而變化,此係由於彼溫度影響紅外頻譜。當裝載有晶圓之晶舟處於在攝氏70度至攝氏200度之間的一溫度範圍中時,壁部分26之熱輻射表面吸收比(在室溫下)可在0.6與0.99之間。當裝載有晶圓之晶舟處於在攝氏70度與攝氏100度之間的一溫度範圍中時,壁部分26之熱輻射吸收比(在室溫下)可在0.65與0.95之間。
當然,至少壁部分之引導至晶舟處理空間(特別是,引導至在冷卻位置中之晶舟)的側可具有至少0.6之熱輻射表面吸收比,以便藉由熱輻射吸收抽吸來自晶舟12之熱量。在冷卻位置中之冷卻期間,晶舟可具有在攝氏25度與攝氏800度之間的一溫度。
在一實施例中,壁部分26可為金屬。該金屬可包含一陽極氧化鋁。一陽極氧化鋁壁部分之熱輻射表面吸收比可在0.6與0.99之間。
替代地或另外,壁部分26可包含一漆塗之金屬壁部分。一漆塗之金屬壁部分之熱輻射表面吸收比可在0.6與0.99之間。
因此,陽極氧化鋁以及漆塗之金屬表面皆可提供熱輻射之改良吸收。結果,晶舟可更快速地冷卻,例如,自當舟出自熔爐時的在攝氏300度與攝氏800度之間的一溫度,至當可結束冷卻時的在攝氏25度與攝氏100度之間的一溫度。此意謂,該晶舟中之該等經加工晶圓可較早地取出,且該晶舟處理裝置更高效地運作。
在一實施例中,壁部分26可包含一冷卻通道30,其經建構及配置以在使用中具有穿過其以冷卻該壁部分26之一液體冷卻劑。藉由吸收來自晶舟12之熱輻射,壁部分26可溫度增加。藉由藉助於穿過冷卻通道之液體來冷卻壁部分26,液體冷卻劑可除掉由壁部分26吸收之熱量。此防止壁部分26變得過熱。
除了冷卻通道30外或替代冷卻通道30,壁部分26可組配為一散熱片,以抽吸來自晶舟12之熱量。為此目的,壁部分26可具有一厚度,使得壁部分26作為散熱片操作。
替代此或除此之外,遠離晶舟處理空間18引導的壁部分26之一外表面62可具有一熱交換表面擴大形狀,使得壁部分26作為散熱片操作。該熱交換表面擴大形狀包括鰭片、接腳、孔洞及表面粗糙度中之至少一者。散熱片為轉移熱量之一被動熱交換器。在引導至晶舟處理空間18的壁部分26之內表面28上,壁部分26吸收來自晶舟12之熱輻射。在體現為散熱片的壁部分26之外表面62上,壁部分26可將吸收之熱量引走,例如,藉由輻射及/或對流。吸收之熱量的輻射及/或對流可藉由表面擴大形狀(諸如,鰭片、接腳、孔洞及/或表面粗糙度)來增強。散熱片可包括主動熱交換器,諸如,已提到之冷卻通道30,但情況不必需如此。散熱片可包含諸如熱管之被動熱交換器。
在一實施例中,舟輸送器20可包含一可旋轉臺34,其包含至少兩個晶舟支撐件。可旋轉臺34可在主外殼14內圍繞一中心垂直軸36旋轉,以可定位於許多旋轉位置中。垂直延伸之壁結構38可安裝於可旋轉臺34上,且可至少部分在各晶舟支撐件22處界限一對應的垂直延伸之晶舟腔室40。可旋轉臺34可針對各晶舟腔室40包含一旋轉位置,在該旋轉位置中,晶舟腔室及容納於其中之晶舟處於冷卻24位置中。
舟輸送器20之各種實施例係已知的。在此實施例中,舟輸送器20包含可旋轉臺34,及垂直延伸之壁結構38,其一起亦被稱為回轉料架。為了冷卻晶舟12,可旋轉臺34可將其晶圓支撐件22與定位於其上之晶舟12一起旋轉至冷卻位置24。晶舟腔室40及容納於其中之晶舟可藉由可旋轉臺34之旋轉移動至的其他旋轉位置包括:一裝載/接收位置,其用於將晶舟12垂直裝載至加工腔室66內及用於接收來自加工腔室66之晶舟12;及一轉移位置,其用於自晶舟12轉移晶圓及將晶圓轉移至晶舟12,可能經由提供於主外殼14之壁16中的一開口。
將可旋轉臺34與垂直延伸之壁結構38一起使用之一優勢在於,對於由垂直延伸之壁結構38創造的各晶舟腔室40,可創造一微環境。此意謂,處於第一晶舟腔室40中之一晶舟12未曝露於來自處於第二晶舟腔室38中之晶舟12的碎屑。事實上,在各晶舟腔室40中創造一經調節之微環境。此相當大地減小了晶圓污染之可能性。
在一實施例中,該晶舟處理裝置可進一步包含一氣體流通系統42,用於供應氣體及自晶舟處理空間18抽吸氣體,以在晶舟處理裝置10之主外殼14內創造微環境。氣體流通系統42可包括一氣體流通系統熱交換器44,用於冷卻供應至晶舟處理空間18之氣體,以便藉由對流抽吸來自在冷卻位置24中之晶舟12的熱量。
氣體流通系統42提供一第二方式來冷卻晶舟及在晶舟中之晶圓。冷卻具有晶圓之晶舟12之第一方式為藉由熱輻射之吸收,熱輻射之吸收係藉由具有至少0.60之熱輻射表面吸收比之壁部分26。冷卻具有晶圓之晶舟12之第二方式為藉由熱對流。熱對流係藉由將冷卻之氣體供應至晶舟處理裝置來增強,特別是,至少供應至在冷卻位置中之晶舟腔室40。使用對流將來自晶舟12及晶圓之熱量轉移至由氣體流通系統42供應的冷卻之氣體。自具有熱晶圓之晶舟抽吸熱量之兩個方式之應用增強了晶舟處理裝置10之冷卻容量,且因此減少了冷卻時間。
在一實施例中,氣體流通系統42可經組配以將氣體至少供應至在冷卻位置24中之晶舟腔室40。並非每一個晶舟腔室40皆需要冷卻。冷卻在冷卻位置24中的具有晶圓之晶舟12可為足夠的。
在一實施例中,氣體流通系統42可包含一氣體供應區域、一氣體排放區域50、一入口管54、一出口管56及一再流通通道。如在圖2中展示之出口管56受到垂直延伸之壁結構38界限。在一替代實施例中,垂直延伸之壁結構38之圓周壁部分38a可省略,使得出口管56直接受到主外殼14之壁16界限。在彼實施例中,界限與在冷卻位置中之晶舟相關聯的出口管56的主外殼14之壁16之部分亦可具有至少0.6之一熱輻射表面吸收比,且在再一實施例中,可包含冷卻通道。此實施例可進一步改良冷卻效應。出口管56可體現為垂直延伸之壁結構38與主外殼14之壁16之間的一過道。在各晶舟腔室40中之氣體供應區域46可包含分佈於垂直延伸之壁結構38中的多個氣體供應開口。在各晶舟腔室40中之氣體排放區域50至少當晶舟腔室40在冷卻位置24中時,可包含多個氣體排放開口。入口管54可與氣體供應開口流體連通。出口管56可與氣體排放開口流體連通。再流通通道可自出口管56延伸至入口管54,且可包含至少一個鼓風機。氣體流通系統42因此形成一閉合迴路流通系統。鼓風機可將氣體吹過再流通通道,且因此吹過氣體流通系統42,以至少冷卻在冷卻位置中的具有晶圓之晶舟12。入口管54及/或出口56可由垂直延伸之壁結構38創造。兩個管54、56將接著與晶舟腔室40一起在可旋轉臺34上旋轉。
包含多個氣體排放開口的氣體排放區域50之至少一部分可設置於具有至少0.60之熱輻射表面吸收比的壁部分26中。以此方式,出口管56可經建構,使得出口管56不需要隨可旋轉臺34旋轉,但可連接至主外殼14。此使出口管56之建構在技術上不太有挑戰性,且因此較廉價。
在一實施例中,冷卻通道30可包含為氣體流通系統熱交換器44之部分的多個冷卻通道30。多個冷卻通道30因此可冷卻壁部分26以及氣體流通系統42中之氣體兩者。冷卻通道30之冷卻容量可經組配使得由金屬壁部分26吸收之熱輻射以及由氣體經由對流吸收之熱量由冷卻通道30中之液體冷卻劑排出。因此,達成有效冷卻。
在一實施例中,垂直延伸之壁結構38可包括反射表面,其經組配以便在壁部分26之方向上反射由晶舟12輻射之熱量。自晶舟12輻射之熱量將通常不僅朝向壁部分26輻射,而且貫穿晶舟12之全部圓周。此意謂,亦有晶舟處理裝置10之其他部分將接收此熱輻射。替代吸收此熱輻射,垂直延伸之壁結構38中之該反射表面將在壁部分26之方向上反射熱輻射。此增強壁部分26之熱輻射之吸收,且因此增大晶舟處理裝置之冷卻效率。
本揭露內容亦提供一種立式分批熔爐總成,其包含:一加工腔室66,其用於加工容納於一晶舟12中之晶圓;根據本發明之一晶舟處理裝置10,其定位於該加工腔室66下;及一立式晶舟提升總成68,其經組配以將一晶舟12自晶舟處理裝置10轉移至該加工腔室66,且反之亦然。
立式分批熔爐總成之效應及優勢已在發明內容章節中描述,且此等效應及優勢在此被以引用之方式插入。
最後,本揭露內容提供一種用於冷卻一晶舟處理裝置10中之一晶舟12之方法。該方法包含提供根據本發明之一晶舟處理裝置10,在該晶舟處理裝置10之該至少一個晶舟支撐件22上提供一晶舟12,將該晶舟12輸送至該冷卻位置24,及藉由具有至少0.60之熱輻射表面吸收比的壁部分26吸收來自該晶舟12之熱輻射。
該方法之效應及優勢已在發明內容章節中描述,且此等效應及優勢在此被以引用之方式插入。
在一實施例中,該方法進一步包含冷卻供應至晶舟處理空間18之氣體,及藉由對流抽吸來自在冷卻位置24中之晶舟12的熱量。
除了藉由吸收熱輻射來冷卻晶舟12之外,經冷卻之氣體提供冷卻晶舟12之第二方式,即,藉由藉助於供應至晶舟處理空間18之經冷卻氣體進行之熱量對流。此進一步增強晶舟處理裝置10之冷卻容量。
雖然以上已部分參考隨附圖式來描述本發明之說明性實施例,但應理解,本發明不限於此等實施例。自圖式、揭露內容及所附申請專利範圍之學習,熟習此項技術者在實踐所主張之發明時,可理解及實行對揭露之實施例之變化。
貫穿本說明書對「一個實施例」或「一實施例」的任何參考意謂結合該實施例描述之一特定特徵、結構或特性包括於本發明之至少一個實施例中。因此,片語「在一個實施例中」或「在一實施例中」在貫穿本描述各處中之出現未必皆指同一實施例。
此外,注意,以上描述的各種實施例中之一或多者之特定特徵、結構或特性可相互獨立地實施使用,且可以任一合適方式組合以形成新的、未明確描述之實施例。在詳細描述及申請專利範圍中使用之參考編號不限制實施例之描述,其亦不限制申請專利範圍。參考編號僅用來澄清。
10:晶舟處理裝置
12:晶舟
14:主外殼
16:壁
18:晶舟處理空間
20:舟輸送器
22:晶舟支撐件
24:冷卻位置
26:壁部分
28:壁部分內表面
30:冷卻通道
34:可旋轉臺
36:中心垂直軸
38:垂直延伸之壁結構
38a:圓周壁部分
40:晶舟腔室
42:氣體流通系統
44:氣體流通熱交換器
46:氣體供應區域
50:氣體排放區域
54:入口管
56:出口管
62:壁部分外表面
66:加工腔室
68:立式晶舟提升總成
雖然說明書以特定指出且清楚地主張被視為本發明之實施例的內容之申請專利範圍結束,但可更易於自當結合隨附圖式理解的本揭露內容之實施例之某些實例之描述確定本揭露內容之實施例之優勢,其中:
圖1展示根據一實施例的晶舟處理裝置之一實例之透視圖;且
圖2展示根據一實施例的晶舟處理裝置之一實例之示意性俯視圖。
10:晶舟處理裝置
14:主外殼
16:壁
36:中心垂直軸
44:氣體流通熱交換器
68:立式晶舟提升總成
Claims (17)
- 一種晶舟處理裝置,其經組配以定位於一立式分批熔爐之一加工腔室下,其中該晶舟處理裝置包含: 一主外殼,其具有界定且界限一晶舟處理空間之一壁; 一舟輸送器,其包含用於支撐一晶舟之至少一個晶舟支撐件,且經組配以將該晶舟輸送至該晶舟處理空間內之一冷卻位置; 其中該壁之鄰近該冷卻位置的一部分為具有至少0.6之一熱輻射表面吸收比的一壁部分,以便藉由熱輻射吸收比抽吸來自在該冷卻位置中的該晶舟之熱量。
- 如請求項1所述之晶舟處理裝置,其中該壁部分為一金屬壁部分。
- 如請求項2所述之晶舟處理裝置,其中該金屬壁部分為一陽極氧化鋁壁部分。
- 如請求項1所述之晶舟處理裝置,其中該壁部分包含一漆塗之金屬壁部分。
- 如請求項1至4中任一項所述之晶舟處理裝置,其中該壁部分包含一冷卻通道,該冷卻通道經建構及配置以在使用中具有穿過其以冷卻該壁部分之一液體冷卻劑。
- 如請求項1至5中任一項所述之晶舟處理裝置,其中該舟輸送器包含: 一可旋轉臺,其包含至少兩個晶舟支撐件,其中該可旋轉臺可在該主外殼內圍繞一中心垂直軸旋轉,以可定位於許多旋轉位置中; 一垂直延伸之壁結構,其安裝於該可旋轉臺上,且至少部分在各晶舟支撐件處界限一對應的垂直延伸之晶舟腔室, 其中該可旋轉臺針對各晶舟腔室包含一旋轉位置,在該旋轉位置中,該晶舟腔室及容納於其中之該晶舟處於該冷卻位置中。
- 如請求項1至6中任一項所述之晶舟處理裝置,進一步包含: 一氣體流通系統,用於供應一氣體及自該晶舟處理空間抽吸該氣體,以在該晶舟處理裝置之該主外殼內創造一微環境, 其中該氣體流通系統可包括一氣體流通系統熱交換器,用於冷卻供應至該晶舟處理空間之該氣體,以便藉由對流抽吸來自在該冷卻位置中之該晶舟的熱量。
- 如請求項6與7之組合所述之晶舟處理裝置,其中該氣體流通系統經組配以將該氣體至少供應至在該冷卻位置中之該晶舟腔室。
- 如請求項8所述之晶舟處理裝置,其中該氣體流通系統包含: 在各晶舟腔室中之一氣體供應區域,其包含分佈於該垂直延伸之壁結構中的多個氣體供應開口; 在各晶舟腔室中之一氣體排放區域,至少當該晶舟腔室在該冷卻位置中時,其中該氣體排放區域包含多個氣體排放開口; 一入口管,其與該等氣體供應開口流體連通; 一出口管,其與該等氣體排放開口流體連通;以及一 再流通通道,其自該出口管延伸至該入口管且包含至少一個鼓風機。
- 如請求項9所述之晶舟處理裝置,其中包含該等多個氣體排放開口的該氣體排放區域之至少一部分設置於具有至少0.6之該熱輻射表面吸收比的該壁部分中。
- 如請求項5與10之組合所述之晶舟處理裝置,其中該冷卻通道包含多個冷卻通道,其為該氣體流通系統熱交換器之部分,其中該等冷卻通道之冷卻容量經組配使得由該壁部分吸收之熱輻射以及由該氣體經由對流吸收之熱量由該等冷卻通道中之該液體冷卻劑排出。
- 如請求項1至11中任一項所述之晶舟處理裝置,至少附屬於請求項6,其中該垂直延伸之壁結構包括反射表面,該等反射表面經組配以便在該壁部分之方向上反射由該晶舟輻射之熱量。
- 如請求項1至12中任一項所述之晶舟處理裝置,其中該壁部分具有一厚度,使得該壁部分操作為一散熱片。
- 如請求項1至13中任一項所述之晶舟處理裝置,其中被引導遠離該晶舟處理空間的該壁部分之一外表面具有一熱交換表面擴大形狀,使得該壁部分操作為一散熱片,其中該熱交換表面擴大形狀包括鰭片、接腳、孔洞及一表面粗糙度中之至少一者。
- 一種立式分批熔爐總成,其包含: 一加工腔室,其用於對容納於一晶舟中之晶圓加工; 如前述請求項中任一項所述之一晶舟處理裝置,其中該晶舟處理裝置定位於該加工腔室下;以及 一立式晶舟提升總成,其經組配以將一晶舟自該晶舟處理裝置轉移至該加工腔室,且反之亦然。
- 一種用於冷卻一晶舟處理裝置中之一晶舟之方法,該方法包含: 提供如請求項1至14中任一項所述之一晶舟處理裝置; 在該晶舟處理裝置之該至少一個晶舟支撐件上提供一晶舟; 將該晶舟輸送至該冷卻位置;以及 藉由具有至少0.60之該熱輻射表面吸收比的該壁部分吸收來自該晶舟之熱輻射。
- 一種用於冷卻一晶舟處理裝置中之一晶舟之方法,該方法進一步包含: 冷卻供應至該晶舟處理空間之一氣體;以及 藉由對流抽吸來自在該冷卻位置中之該晶舟的熱量。
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- 2020-05-12 CN CN202010398045.4A patent/CN111952227A/zh active Pending
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