TW202044497A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW202044497A
TW202044497A TW109127974A TW109127974A TW202044497A TW 202044497 A TW202044497 A TW 202044497A TW 109127974 A TW109127974 A TW 109127974A TW 109127974 A TW109127974 A TW 109127974A TW 202044497 A TW202044497 A TW 202044497A
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Taiwan
Prior art keywords
pattern
metal
semiconductor device
base island
semiconductor element
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TW109127974A
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English (en)
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TWI763005B (zh
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田中義浩
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日商安靠科技日本公司
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Publication of TWI763005B publication Critical patent/TWI763005B/zh

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Abstract

本發明之目的在於當使用焊料等之第一金屬固定半導體元件而製造半導體裝置時，控制熔融之焊料之流動方向及蔓延範圍，以防止劣質發生。本發明之一實施型態提供一種半導體裝置，其包括一半導體元件及一基島。基島具有一表面，且用以使用一第一金屬將半導體元件固定於表面，於表面之一部分藉由一第二金屬形成一圖案，第一金屬於熔融時與第二金屬之濕潤性大於與表面之濕潤性。

Description

半導體裝置
本發明係關於一種半導體裝置，於用以載置半導體元件之載置部（基島）形成圖案。
目前，關於半導體元件之安裝方法之研究及開發正持續進行著。特別是已知使用引線框架之引線框架封裝（ pa ckage），可做為將半導體元件載置於引線框架（l e ad f rame）之一種安裝方法。使用此框架封裝之場合中，特別是將功率半導體元件搭載至引線框架之基島而加以固定時，已知使用焊料（solde r）之手法（舉例而言，請參照專利文獻1～5，其中專利文獻1 為日本專利公開案H8-172154 號公報，專利文獻2 為日本專利公開案2006-303216 號公報，專利文獻3 為日本專利公開案2008-294172 號公報， 專利文獻4 為日本專利公開案2012-104709 號公報，專利文獻5 為日本專利公開案2012-125786 號公報）。
使用焊料將半導體元件固定於基島之場合中，將熔融之焊料載置（配置）於基島，且將半導體元件載置（配置）於熔融之焊料上。此場合中，要控制熔融之焊料之流動方向及蔓延範圍是極為困難的。因此，有可能發生焊料自基島流出而發生污染或電氣特性劣質等問題。
有鑑於此，本發明之一目的在於提供一種半導體裝置，得以控制熔融之焊料之流動方向及蔓延範圍而載置半導體元件。
根據本發明之一實施型態之一種半導體裝置，其包含一半導體元件及一基島。基島具有一表面，且用以使用一第一金屬將半導體元件固定於表面， 於前述表面之一部分藉由一第二金屬形成一第一圖案，前述第一金屬於熔融時與第二金屬之濕潤性大於與前述表面之濕潤性。
前述第一金屬亦可為焊料，前述第二金屬亦可為銀。
前述第一圖案亦可藉由前述第二金屬之鍍層而形成。
前述第一圖案亦可具有多個矩形圖案或多個直線圖案沿相異方向交叉之放射狀之形狀。
前述第一圖案之前述多個矩形圖案或前述多個直線圖案亦可交叉於至少一位置，此至少一位置亦可偏離於前述基島之中心。
前述第一圖案之前述多個矩形圖案或前述多個直線圖案亦可沿相異方向交叉於多個位置。
前述第一圖案亦可具有相異形狀之多個圖案。
前述第一圖案亦可包含一L 字形圖案及一正方形圖案，或者前述第一圖案亦可包含一L 字形圖案及一矩形圖案。
前述第一圖案亦可具有多個圓形圖案。
前述第一圖案之該些圓形圖案亦可配置成分別連接圓形圖案之其中一者之中心與相鄰於前述此圓形圖案之二個圓形圖案之中心之二個線段等長，且前述二個線段之延長線不以直角相交。
前述半導體裝置亦可更包括一第二圖案，其包圍前述第一圖案，且藉由前述第二金屬形成。
根據本發明，於製造半導體裝置時，能夠控制熔融之焊料之流動方向及蔓延範圍，而能夠防止劣質發生。
關於用以實施本發明之型態，將藉由多個實施型態加以說明。其中，本發明並非限定以下所說明之施型態，而亦能夠對於以下所說明之實施型態進行各種的變形而實施本發明。進形如此之變形而實施之態樣，亦可包含於本發明之技術範圍內。此外，於圖式中縱橫方向之比例尺寸亦可有相異於本發明之實施品之場合。
以下將說明第一實施型態。
圖1A 及圖1B 分別繪示關於本發明之一實施型態之半導體裝置之一製造步驟中之俯視圖及側視剖面圖。
關於本發明之一實施型態之半導體裝置包含封裝本體101、設置於封裝本體101 之多個引線（l e ad ）102 及半導體元件104 。半導體元件104 固定於基島103，基島103 設置於封裝本體101 之上表面。以下之說明中，主要使用金屬（第一金屬）將半導體元件104 固定於基島103。所使用之金屬可為低熔點之金屬。舉例而言，所使用之金屬能夠為焊料。
為了將半導體元件104 固定於基島103，將熔融之金屬（例如焊料）載置於基島103 上用以固定半導體元件104 之位置，且將半導體元件104 載置於熔融之金屬之上。或者將固態的金屬載置於基島103 上，經由加熱及加壓而令金屬熔融，再將半導體元件104 載置於熔融之金屬之上。
圖1C 繪示圖1B 所示之製造步驟之後續步驟中關於本發明之一實施型態之半導體裝置之側視剖面圖。如圖1C 所示，能夠使用接合線（wi re bonding ）105 電性連接半導體元件104 及引線102。電性連接半導體元件104 及引線102 之後，使用做為密封材料106 之樹脂材料進行密封。
圖2A 繪示本發明之一實施型態中之半導體裝置之基島103 上之圖案之一範例。特別是圖2A 為將半導體元件104 固定於基島103 之前之俯視圖。
如圖2A 所示，於基島103 形成圖案（第一圖案）201，此圖案201 之形狀可為多個矩形圖案沿相異方向交叉之形狀。於圖2A中，圖案201 之形狀為四個矩形於每45 度之相異方向逐一交叉之形狀。換言之，於基島103 上形成放射狀之圖案201。其中，矩形圖案之數量並非限定於四個。矩形之形狀及尺寸並非必頇相同，亦可相異。於用以將半導體元件104 固定於基島103 之金屬為熔融狀態之場合中，形成於圖案201 之表面之材料之濕潤性大於未形成有圖案201 之基島103 之表面之濕潤性。換言之，使用於將半導體元件104 固定於基島103 之金屬，對於圖案201 之表面之親和性大於對於基島103 之表面之親和性。
此外，於即使比較構成圖案201 之形狀之多個矩形圖案之各自的幅寬亦能夠予以忽略之場合中，圖案201 之形狀亦能夠為多個線段（直線圖案）沿相異方向延伸之形狀。
圖案201 形成於基島103 之一部分之區域。以就是說，圖案201 能夠不完全覆蓋基島103。再者，於圖2A 中，圖案201 亦可具有凹狀之形狀。
用以將半導體元件104 固定於基島103 之金屬為焊料之場合中，能夠例如使用銀做為金屬（第二金屬）而形成圖案201。於此場合中，能夠藉由對基島103 進行鍍銀步驟而形成圖案201。或者亦能夠藉由對基島103 進行銀之蒸鍍（vapor depos i t ion）而形成圖案201。
為了將半導體元件104 固定於基島103 而使用熔融之焊料之場合中，可將熔融之焊料載置於圖案201 之交叉位置202（或者為構成圖案201 之多個矩形圖案或多個線段之交叉點）。此時，如圖2B所示，熔融之焊料於圖案201 之上從交叉位置202 朝向矩形圖案或線段之端部蔓延。再者，由於熔融之焊料對於圖案201 表面之濕潤性大於對於基島103 表面之濕潤性，故熔融之焊料能夠實質上不蔓延至圖案201以外之處。因此，如圖2B 所示，熔融之焊料於圖案201 上形成子圖案203。
另外，亦能夠將固態之焊料配置於圖案201 之交叉位置202，再進行加熱及加壓而令焊料熔融。
之後，將半導體元件104 配置於圖案201 之交叉位置202，再藉由固化熔融之焊料而將半導體元件104 固定於基島103。其中，半導體元件104 並非必頇精密地配置於圖案201 之交叉位置202。
如上所述， 於本實施型態中， 於基島103 上配置圖案201。於用以將半導體元件104 固定於基島103 之金屬為熔融狀態之場合中，形成圖案201 之材料之濕潤性大於未形成有圖案201 之基島103之表面之濕潤性。
藉此，將熔融之金屬配置於圖案201 時，熔融之金屬會蔓延於圖案201 上。因此，能夠控制熔融之金屬之流動方向及蔓延範圍。是以，能夠防止因焊料自基島103 流出而導致之污染發生或電氣特性劣質等問題。
其中，研磨基島103 之表面以於基島103 之表面設置用以限定熔融之金屬之蔓延範圍之凹部或溝槽， 則可變得並非必要。因此，能夠令基島103 之表面變得平坦。另外，亦可研磨基島103 之表面以形成如圖2A 所示之凹狀圖案之溝槽，且藉由電鍍或蒸鍍而於此溝槽中形成如銀膜之金屬（第二金屬）膜，藉以形成圖案201。
此外，如圖2C 所示，藉由將半導體元件104 之角落放置於子圖案203 之上，而能夠更確實地固定半導體元件104。
以下將說明第二實施型態。
圖3A 繪示本發明之一實施型態中之半導體裝置之基島103 上之圖案之一範例。
如圖3A 所示，於基島103 形成圖案301，圖案301 之形狀可為多個矩形圖案沿相異方向交叉之形狀。圖案301 之材料及形成方法可與第一實施型態相同。然而，與第一實施型態相異的是，圖案301之交叉位置（構成圖案301 之多個矩形圖案之交叉點）302 偏離於基島103 之中心。其中，若基島103 之形狀為正方形、長方形（矩形）或平行四邊形，則基島103 之中心為其對角線之交叉點。若基島103 之形狀並非為平行四邊形時（例如梯形等平行四邊形以外之形狀之場合），能夠例如以基島103 之形狀之重心等位置定義為基島103 之中心。
將半導體元件104 固定於基島103 之順序亦可與第一實施型態相同。亦即，將熔融之焊料載置於圖案301 之交叉位置302。此時如圖3B 所示，熔融之焊料於圖案301 之上從圖案301 之交叉位置302朝向端部蔓延，而形成子圖案303。
之後如圖3C 所示，將半導體元件104 載置於圖案301 之交叉位置302，再藉由固化熔融之焊料而將半導體元件104 固定於基島103。
如上所述，於本實施型態中，能夠將半導體元件104 固定於基島103 之中心以外之位置。其中，由於圖案301 之交叉位置302偏離於基島103 之中心，而使得構成圖案301 之其中一個矩形圖案之其中一方向之延伸長度大於另一方向之延伸長度，故於此矩形圖案中沿此一方向能夠流動更多焊料，而可不必精密地調整焊料之份量。
以下將說明第三實施型態。
圖4A 繪示本發明之一實施型態中之半導體裝置之基島103 上之圖案之一範例。
如圖4A 所示，於基島103 形成圖案401，圖案401 之形狀可為多個矩形圖案沿相異方向交叉之形狀。圖案401 之材料及形成方法可與第一實施型態相同。然而，與第一及第二實施型態相異的是，於圖案401 中存在有多個矩形圖案沿相異方向交叉之多個交叉位置402、403、404。其中二個交叉位置402、404 偏離於基島103 之中心。
將半導體元件104 固定於基島103 之順序亦可與第一及第二實施型態相同。亦即，將熔融之焊料載置於圖案401 之交叉位置402。此時如圖4B 所示，熔融之焊料於圖案401 之上從圖案401 之交叉位置402 朝向端部蔓延，而形成子圖案405。
之後如圖4C 所示，將半導體元件104 載置於圖案401 之交叉位置402，再藉由固化熔融之焊料而將半導體元件104 固定於基島103。
於本實施型態中，半導體元件104 之固定位置並非限定於交叉位置402。圖案401 中因存在有交叉位置402、403、404，而亦能夠於其中之交叉位置404 載置熔融之焊料， 以固定另外的半導體元件。此外，亦能夠於交叉位置403 載置熔融之焊料，以固定更另外的半導體元件。因此，於多個交叉位置402、403、404 中之二個以上能夠分別固定半導體元件。
根據本實施型態，由於圖案401 具有多個交叉位置402 、403、404，而能夠固定多個半導體元件。
以下將說明第四實施型態。
於第一至第三實施型態中，基島103 上之圖案之形狀可為多個矩形圖案沿相異方向交叉之形狀。然而，於本發明中，基島103上之圖案之形狀並非限定於第一至第三實施型態中之圖案之形狀。舉例而言，如5A 所示，可於基島103 之中心配置正方形或矩形之圖案501。此外，於正方形或矩形之圖案501 之周圍配置包圍此正方形或矩形之圖案501 之圖案502。於正方形或矩形之圖案501 及包圍其之圖案502 之周圍配置L 字形之圖案503、504。另於L 字形之圖案之間亦能夠配置直線圖案。於此場合中，正方形或矩形之圖案501 及包圍其之圖案502、L 字形之圖案503、504 中若有必要而去除直線圖案之部位505 之位置，亦能夠不形成圖案。
於本實施例中，能夠於基島103 上之圖案501、502、503、504 上之任意位置載置熔融之焊料，而將半導體元件104 固定於基島103。此時如圖5B 所示，熔融之焊料分散於圖案501、502、503、504，而形成分散之子圖案。接下來如圖5C 所示，將半導體元件104 載置於分散之子圖案之上。
如上所述，於本實施型態中，能夠將半導體元件104 固定於基島103 之圖案上之任意位置。其中於此場合下，能夠提高圖案佔據基島103 上之面積之比例，而能夠防止焊料蔓延至必要範圍以上。
以下將說明第五實施型態。
於本發明中，基島103 上之圖案並非限定於如同正方形、矩形、L 字形或直線形等直線之形狀或其組合而成之形狀。所形成之圖案亦能夠配置為多個圓形之圖案601。此場合中，例如多個圓形之圖案601 亦可分別配置於相互平行且等間隔之多個直線上。其中，如圖6A所示，其中一個圓形圖案601a 之中心與相鄰於此圓形圖案601a 之二個圓形圖案601b、601c 之中心之二個線段L1、L2 等長，且此二個線段L1、L2 之延長線不以直角相交。再者，於圖6A 中，符號602 表示基島103 之並未形成有圖案601 之部位。
於本實施例中，能夠於基島103 上之圖案601 上之任意位置載置熔融之焊料，而將半導體元件104 固定於基島103。此時如圖6B 所示，熔融之焊料即使載置於含有部位602 之部分，亦可受到圓形之圖案601 之吸引而蔓延，進而描繪出子圖案603。之後如圖6C 所示，能夠將半導體元件104 固定於子圖案603 上。
根據本實施型態，能夠於基島103 之任意位置固定半導體元件104。此外，藉由配置更多個圓形之圖案601，而能夠防止焊料蔓延至必要範圍以上。
以下將說明第六實施型態。
圖7 繪示本發明之一實施型態中之半導體裝置之基島103上之圖案之一範例。於圖7 中，圖案201 之周圍受到另一圖案（第二圖案）701 包圍。換言之，由圖案701 包圍之區域內，配置有第一實施型態之圖案201。此外，於圖7 中雖繪示第一實施型態之圖案201，亦能夠使用例如第二至第五實施型態之任一者或其組合之圖案等任意之圖案取代圖案201。
其中， 如第一至第五實施型態中所說明， 可於圖案701所包圍之區域內載置熔融之焊料以固定半導體元件。
於本實施型態中，即使焊料過度蔓延，藉由焊料蔓延於此另一圖案701，而能夠防止焊料自基島103 溢出。
以下將說明其他實施型態。
於上述內容中，描述了關於使用金屬（例如焊料）將半導體元件固定於基島之場合。然而，本發明並非限定於使用金屬之場合，關於使用黏著劑將半導體元件固定於基島之場合中， 亦能夠使用本發明。此場合中，於基島之表面形成圖案，圖案之材料對於黏著劑之親和性大於基島之表面對於黏著劑之親和性。
101:封裝本體 102:引線 103:基島 104:半導體元件 105:接合線 106:密封材料 201、301、401、501、502、503、504、601、701:圖案 202、302、402、403、404:交叉位置 203、303、405、603:子圖案 505、602:部位
[圖1A] 繪示關於本發明之一實施型態之半導體裝置之一製造步驟中之俯視圖。 [圖1B] 繪示關於本發明之一實施型態之半導體裝置之一製造步驟中之側視剖面圖。 [圖1C] 繪示關於本發明之一實施型態之半導體裝置之另一製造步驟中之側視剖面圖。 [圖2A] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。 [圖2B] 繪示關於本發明之一實施型態之半導體裝置之基島上載置有熔融之焊料之一範例圖。 [圖2C] 繪示關於本發明之一實施型態之半導體裝置之基島上使用焊料固定半導體元件之一範例圖。 [圖3A] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。 [圖3B] 繪示關於本發明之一實施型態之半導體裝置之基島上載置有熔融之焊料之一範例圖。 [圖3C] 繪示關於本發明之一實施型態之半導體裝置之基島上使用焊料固定半導體元件之一範例圖。 [圖4A] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。 [圖4B] 繪示關於本發明之一實施型態之半導體裝置之基島上載置有熔融之焊料之一範例圖。 [圖4C] 繪示關於本發明之一實施型態之半導體裝置之基島上使用焊料固定半導體元件之一範例圖。 [圖5A] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。 [圖5B] 繪示關於本發明之一實施型態之半導體裝置之基島上載置有熔融之焊料之一範例圖。 [圖5C] 繪示關於本發明之一實施型態之半導體裝置之基島上使用焊料固定半導體元件之一範例圖。 [圖6A] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。 [圖6B] 繪示關於本發明之一實施型態之半導體裝置之基島上載置有熔融之焊料之一範例圖。 [圖6C] 繪示關於本發明之一實施型態之半導體裝置之基島上使用焊料固定半導體元件之一範例圖。 [圖7] 繪示關於本發明之一實施型態之半導體裝置之基島上之圖案之一範例圖。
103:基島
104:半導體元件
201:圖案
203:子圖案

Claims (16)

  1. 一種半導體裝置，包括： 半導體元件； 基島，該基島具有表面，使用第一金屬將該半導體元件固定於該表面上；以及 第一圖案，該第一圖案由第二金屬所形成，該第一圖案被配置在該表面的一個部份上， 其中： 當該第一金屬於熔融時，該第一金屬與該第二金屬之親和性大於與該表面之親和性。
  2. 如請求項1 所述之半導體裝置，其中： 該第一金屬在該半導體元件的中央部分的下方； 該第一金屬包括焊料；並且 該第二金屬包含銀(Ag)。
  3. 如請求項1 所述之半導體裝置，其中： 第二金屬包括電鍍的金屬。
  4. 如請求項1 所述之半導體裝置，其中： 該第一圖案防止該第一金屬實質上擴散到該第一圖案之外。
  5. 如請求項1 所述之半導體裝置，其中： 該第一金屬包括第二圖案，該第二圖案被中心地定位在該第一圖案上方。
  6. 如請求項1 所述之半導體裝置，其中： 該第一金屬包括第二圖案；並且 該第二圖案、該第一圖案及該半導體元件是中心地彼此對齊。
  7. 一種半導體裝置，包括： 基島，該基島具有表面； 第一圖案，該第一圖案設置在該表面的部分的頂部上； 第一金屬，該第一金屬設置在該第一圖案上，以提供第二圖案上覆於該第一圖案；以及 半導體元件，該半導體元件固定到子圖案，其中： 該第一圖案包括第二金屬，該第二金屬包含的對於該第一金屬的濕潤性特徵是大於對於該表面的濕潤性特徵；並且 該第二圖案被中心地對準於該第一圖案。
  8. 如請求項7所述之半導體裝置，其中： 該第一圖案包括凹狀之形狀； 該第二圖案僅上覆於該第一圖案的一部分；並且 該第一金屬是焊料，而該第二金屬是銀。
  9. 如請求項7所述之半導體裝置，其中： 該第一圖案包括電鍍材料； 該表面沒有設置有第一圖案的凹槽；並且 該半導體元件包括角落區域，在俯視圖中，該角落區域直接上覆於該第二圖案及該第一圖案。
  10. 如請求項7所述之半導體裝置，其中： 該第一圖案具有放射狀形狀，該放射狀形狀具有多個長方形圖案或是線性圖案，這些圖案相交並且以不同方向放置於該表面上。
  11. 一種半導體裝置，其包括： 基島，該基島具有表面； 第一圖案，該第一圖案被設置在該表面的部分的頂部上； 第一材料，該第一材料被設置在該第一圖案上，以提供上覆於該第一圖案的第二圖案；以及 半導體元件，該半導體元件被固定到該第二圖案，其中： 該第一圖案包括第一金屬，該第一金屬對於該第一材料的濕潤性特徵大於對於該表面的濕潤性特徵； 該半導體元件和該第二圖案被中心地定位在該第一圖案上方。
  12. 如請求項12所述之半導體裝置，其中： 該第一材料包括第二金屬。
  13. 如請求項12所述之半導體裝置，其中： 該第二金屬包括電鍍金屬。
  14. 如請求項12所述之半導體裝置，其中： 該第二金屬包括銀(Ag)。
  15. 如請求項11所述之半導體裝置，其中： 該第二圖案是該第一圖案的子圖案。
  16. 如請求項15所述之半導體裝置，其中： 該子圖案小於該第一圖案。
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