JP6032414B2 - 発光モジュール - Google Patents
発光モジュール Download PDFInfo
- Publication number
- JP6032414B2 JP6032414B2 JP2012252715A JP2012252715A JP6032414B2 JP 6032414 B2 JP6032414 B2 JP 6032414B2 JP 2012252715 A JP2012252715 A JP 2012252715A JP 2012252715 A JP2012252715 A JP 2012252715A JP 6032414 B2 JP6032414 B2 JP 6032414B2
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- JP
- Japan
- Prior art keywords
- land
- led element
- land portion
- wiring
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000679 solder Inorganic materials 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 238000007747 plating Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09372—Pads and lands
- H05K2201/09427—Special relation between the location or dimension of a pad or land and the location or dimension of a terminal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
11 基板としてのDPC基板
12 LED素子
12a 第1の主面としての上面
12b 第2の主面としての下面
13a 実装面
15 配線パターン
15N 第1の配線パターン
15P 第2の配線パターン
16 ランド部
16N 第1のランド部
16P 第2のランド部
17N 第1の配線部
17P 第2の配線部
21 透明層としてのサファイア層
22 第1の半導体層としてのN層
23 第2の半導体層としてのP層
24 発光層
25N 半田接合部としての第1の半田接合部
25P 半田接合部としての第2の半田接合部
41 段差部
43 溝
45 スルーホール
46 スルーホール配線部
Claims (7)
- 第1の主面、および第1の主面に対して反対側の第2の主面を有するとともに、第1の主面側に設けられる透明層と、透明層の第2の主面側に設けられた第1の半導体層と、第1の半導体層の第2の主面側に設けられた第2の半導体層と、第1の半導体層と第2の半導体層の間に設けられた発光層と、を備えるLED素子と;
第1の半導体層の第2の主面側に設けられた第1の半田接合部と;
第2の半導体層の第2の主面側に設けられた第2の半田接合部と;
LED素子を実装する実装面を有し、実装面には第1の半田接合部が接続される第1のランド部を有する第1の配線パターンが形成されているとともに、第2の半田接合部が接合される第2のランド部を有する第2の配線パターンが第1のランド部と対向するように形成されており、第1および第2のランド部は、それらの縁を形成する縁部がLED素子の側面よりもLED素子の内側にそれぞれ配置され、第1のランド部と第2のランド部とが互いに対向する方向に対して交差する方向における第2のランド部の幅が第1のランド部の幅よりも小さく、かつ、第1のランド部と第2のランド部の互いに対向する縁部以外の縁部において、第2のランド部の縁部が第1のランド部の縁部よりもLED素子の側面に対してより内側に配置されている基板と;
を具備していることを特徴とする発光モジュール。 - 少なくとも第2のランド部は、LED素子の第2の半田接合部の側面より内側に配置されていることを特徴とする請求項1記載の発光モジュール。
- 少なくとも第2のランド部の面積は、LED素子の第2の半田接合部の面積より小さいことを特徴とする請求項1または2記載の発光モジュール。
- 第1、第2の配線パターンは、第1、第2のランド部より幅が狭く第1、第2のランド部に接続される第1、第2の配線部を有していることを特徴とする請求項1ないし3いずれか一記載の発光モジュール。
- 少なくとも第2の配線部には、第2のランド部との境界部分に第2のランド部の表面より低い段差部が設けられていることを特徴とする請求項4記載の発光モジュール。
- 少なくとも第2のランド部の側面に複数の溝が形成されていることを特徴とする請求項1ないし4いずれか一記載の発光モジュール。
- 第1、第2のランド部の位置に対応して基板にスルーホールが形成され、スルーホールに第1、第2のランド部に接続されるスルーホール配線部が形成されていることを特徴とする請求項1ないし3いずれか一記載の発光モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012252715A JP6032414B2 (ja) | 2012-11-16 | 2012-11-16 | 発光モジュール |
CN2013200310899U CN203103354U (zh) | 2012-11-16 | 2013-01-21 | 发光模块 |
TW102103359A TW201421751A (zh) | 2012-11-16 | 2013-01-29 | 發光模組 |
EP13154793.7A EP2733754A2 (en) | 2012-11-16 | 2013-02-11 | Light-emitting module |
US13/781,427 US20140138732A1 (en) | 2012-11-16 | 2013-02-28 | Light-emitting module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012252715A JP6032414B2 (ja) | 2012-11-16 | 2012-11-16 | 発光モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014103177A JP2014103177A (ja) | 2014-06-05 |
JP6032414B2 true JP6032414B2 (ja) | 2016-11-30 |
Family
ID=47843043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012252715A Active JP6032414B2 (ja) | 2012-11-16 | 2012-11-16 | 発光モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140138732A1 (ja) |
EP (1) | EP2733754A2 (ja) |
JP (1) | JP6032414B2 (ja) |
CN (1) | CN203103354U (ja) |
TW (1) | TW201421751A (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015092781A1 (en) | 2013-12-19 | 2015-06-25 | Koninklijke Philips N.V. | Light emitting device package |
CN105830240B (zh) * | 2014-01-07 | 2019-11-01 | 亮锐控股有限公司 | 发光器件封装 |
EP2950358B1 (en) * | 2014-05-29 | 2021-11-17 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package |
JP6430843B2 (ja) * | 2015-01-30 | 2018-11-28 | 株式会社ジェイデバイス | 半導体装置 |
CN105246248B (zh) * | 2015-10-30 | 2018-04-27 | 环维电子(上海)有限公司 | 电路板 |
JP6728676B2 (ja) * | 2015-12-26 | 2020-07-22 | 日亜化学工業株式会社 | 発光装置 |
US10046409B2 (en) * | 2016-09-08 | 2018-08-14 | Raytheon Company | Methods of making an electrical connection, and of making a receptacle for receiving an electrical device |
CN110137141A (zh) * | 2019-04-30 | 2019-08-16 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
CN112151565B (zh) * | 2019-06-27 | 2023-01-24 | 成都辰显光电有限公司 | 微发光二极管显示面板的制造方法 |
CN112445024B (zh) * | 2019-09-03 | 2024-03-22 | 纬联电子科技(中山)有限公司 | 显示器及其背光模块与灯源支架 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4411695B2 (ja) * | 1999-07-28 | 2010-02-10 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP4897133B2 (ja) * | 1999-12-09 | 2012-03-14 | ソニー株式会社 | 半導体発光素子、その製造方法および配設基板 |
JP2005038892A (ja) * | 2003-07-15 | 2005-02-10 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
JP2007288097A (ja) * | 2006-04-20 | 2007-11-01 | Showa Denko Kk | フリップチップ型半導体発光素子用の実装基板、フリップチップ型半導体発光素子の実装構造及び発光ダイオードランプ |
JP5340583B2 (ja) * | 2007-11-26 | 2013-11-13 | スタンレー電気株式会社 | 半導体発光装置 |
TW201117436A (en) * | 2009-11-04 | 2011-05-16 | Everlight Electronics Co Ltd | Light-emitting diode package and manufacturing method thereof |
JP5745784B2 (ja) * | 2010-06-10 | 2015-07-08 | シチズン電子株式会社 | 発光ダイオード |
-
2012
- 2012-11-16 JP JP2012252715A patent/JP6032414B2/ja active Active
-
2013
- 2013-01-21 CN CN2013200310899U patent/CN203103354U/zh not_active Expired - Fee Related
- 2013-01-29 TW TW102103359A patent/TW201421751A/zh unknown
- 2013-02-11 EP EP13154793.7A patent/EP2733754A2/en not_active Withdrawn
- 2013-02-28 US US13/781,427 patent/US20140138732A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2014103177A (ja) | 2014-06-05 |
CN203103354U (zh) | 2013-07-31 |
EP2733754A2 (en) | 2014-05-21 |
TW201421751A (zh) | 2014-06-01 |
US20140138732A1 (en) | 2014-05-22 |
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