CN110137141A - 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 - Google Patents
一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 Download PDFInfo
- Publication number
- CN110137141A CN110137141A CN201910364622.5A CN201910364622A CN110137141A CN 110137141 A CN110137141 A CN 110137141A CN 201910364622 A CN201910364622 A CN 201910364622A CN 110137141 A CN110137141 A CN 110137141A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- capillary
- metallization removal
- groove structure
- slot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000001465 metallisation Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000003466 welding Methods 0.000 title claims abstract description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 17
- 238000001259 photo etching Methods 0.000 claims abstract description 3
- 230000005496 eutectics Effects 0.000 claims description 7
- 230000004927 fusion Effects 0.000 claims description 6
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000002493 microarray Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000010992 reflux Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 2
- 239000004568 cement Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2499—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
- H01L2224/24996—Auxiliary members for HDI interconnects, e.g. spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/24997—Flow barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8238—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/82385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/828—Bonding techniques
- H01L2224/82801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
本发明公开了一种具有表面毛细微槽结构的去金属化陶瓷基板及其焊接方法。所述陶瓷基板的两侧面和上表面刻有两条不相连通的毛细微槽,用于驱动焊料上升,实现芯片与印制电路板的电气连接。本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板,其结构设计简单合理,相比于传统的低温共烧陶瓷基板以及目前应用比较广泛的直接镀铜陶瓷基板,免去光刻覆铜以及金属化过孔的工艺,减少了整体制造工艺的复杂性,并降低了成本。
Description
技术领域
本发明属于微电子封装技术领域,特别涉及一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法。
背景技术
陶瓷基板是以电子陶瓷为基底,对膜电路元件及外贴切元件形成一个支撑底座的片状材料。具有优良的导热性和气密性,广泛应用于功率电子、led封装等领域。
作为led芯片基板的陶瓷基板,是属于led芯片与系统电路板两者之间热能导出的媒介,并借由共晶或覆晶与led芯片结合,同时起到支撑保护芯片的作用。为确保LED的散热稳定和LED的发光效率,市面上的散热陶瓷基板主要以以下四类为主:低温共烧多层陶瓷(LTCC)、高温共烧多层陶瓷(HTCC)、直接接合铜基板(DBC)、直接镀铜基板(DPC)。但现有的陶瓷基板在生产过程中都避免不了金属化这一过程,尤其是采用倒装芯片时,陶瓷基板上表面(放置芯片的面)需要覆铜,下表面需要镀电极,同时还需要金属化的过孔。这就导致了这种陶瓷基板的生产工艺复杂并且成本很高。
发明内容
为了克服现有技术存在的不足,本发明的目的是提供一种具有毛细微槽结构的去金属化陶瓷基板以及焊接方法。
针对上述问题,本发明提供了一种具有表面毛细微结构的去金属化陶瓷基板与焊接方法,它具有结构、工艺简单,并能为芯片与印制电路板提供可靠电气连接等优点。
本发明的目的至少通过如下技术方案之一实现。
本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板,包括陶瓷基板主体及表面毛细微结构;所述表面毛细微结构为毛细微槽。
进一步地,所述表面毛细微结构为两个左右对称的毛细微槽,两个毛细微槽分别设于陶瓷基板主体的两侧,两个毛细微槽不连通;所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀所形成的。
进一步地,所述毛细微槽的形状包括矩形微槽、锯齿形微槽及圆形微槽,但不局限于以上几种。
进一步地,制备所述毛细微槽的方式包括激光加工、光刻及化学刻蚀。
进一步地,所述毛细微槽的平均宽度为10μm-100μm,平均槽深为10μm-100μm,从而形成足够小的线度来满足毛细驱动焊料的力的要求。
进一步地,所述陶瓷基板主体的材料包括Al2O3、BeO及AlN。进一步的,该陶瓷基板(1)采用Al2O3、BeO、AlN其中一种高温烧结而成。
优选地,陶瓷基板主体采用陶瓷片烧结的方法制成,烧结温度为850-1900℃;陶瓷基板成型的方法包括粉末压制、流延、轧制。
本发明提供的一种具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法,包括如下步骤:
(1)将芯片(3)固定(固晶)在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面;
(2)将带芯片的陶瓷基板固定在具有合适位置焊盘的印制电路板(4)上;
(3)在焊盘(5)上放置熔融焊料(6),利用毛细力驱动焊料从下层焊盘上升至芯片电极,实现芯片与印制电路板的电气连接。
进一步地,步骤(1)所述固定的方式包括采用绝缘胶固定。
进一步地,步骤(2)所述固定的方式包括采用绝缘胶固定或机械夹持。
进一步地,步骤(3)所述熔融焊料包括金锡共晶焊料,所述金锡共晶焊料的熔点为217-230℃,金含量为10wt%-15wt%;焊接方式包括回流焊,所述回流焊设备功率为11-15kw、加热区长度为1000-2000mm,加热温度为220-240℃。
与现有技术相比,本发明具有如下优点和有益效果:
(1)本发明提供的具有表面毛细微槽结构的去金属化陶瓷基板,陶瓷基板结构及制造工艺简单,省去了覆铜光刻、蒸镀电极等工艺从而大大降低了以往金属化陶瓷基板的生产难度,适用于大批量生产。
(2)本发明提供的具有表面毛细微槽结构的去金属化陶瓷基板焊接方法,利用回流焊的方法使得金锡共晶焊料在毛细力驱动下上升,降低了以往金属化陶瓷基板的焊接难度,大大简化了工艺流程,在保证可靠连接的同时最大程度地降低了生产成本。
附图说明
图1为矩形毛细微结构的去金属化陶瓷基板(具有表面毛细微槽结构的去金属化陶瓷基板)示意图;
图2为放有led芯片的具有矩形毛细微槽结构的去金属化陶瓷基板示意图;
图3为具有矩形毛细微槽结构的去金属化陶瓷基板与印刷电路板焊接的示意图;
图4为具有矩形毛细微槽结构的去金属化陶瓷基板与印刷电路板焊接的剖面图;
其中,1为陶瓷基板主体;2为表面毛细微结构;3为芯片;4为印制电路板;5为焊盘;6为熔融焊料。
具体实施方式
以下结合附图和实例对本发明的具体实施作进一步说明,但本发明的实施和保护不限于此。需指出的是,以下若有未特别详细说明之过程,均是本领域技术人员可参照现有技术实现或理解的。所用试剂或仪器未注明生产厂商者,视为可以通过市售购买得到的常规产品。
实施例1
一种具有表面毛细微槽结构的去金属化陶瓷基板,包括陶瓷基板主体1及表面毛细微结构2;所述表面毛细微结构2设置在陶瓷基板主体1的两侧,所述表面毛细微结构为毛细微槽,所述具有表面毛细微槽结构的去金属化陶瓷基板的结构可参照图1。
所述表面毛细微结构为两个左右对称的毛细微槽,两个毛细微槽分别设于陶瓷基板主体的两侧,两个毛细微槽不连通;所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀所形成的。所述毛细微槽包括矩形微槽、锯齿形微槽及圆形微槽。
所述陶瓷基板主体的材质为AlN,将AlN材料在1500摄氏度下烧结而成。然后在烧结好的陶瓷基板主体的上表面及两侧面按照芯片电极的形状与位置,涂覆两条不相接触的光刻胶,间隔距离为25μm,光刻胶厚度为2μm,利用紫外光进行曝光显影,获得宽度为10μm,长度为10μm的矩形毛细微槽,得到所述具有表面毛细微槽结构的去金属化陶瓷基板。
一种具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法,包括如下步骤:
(1)将芯片3固定在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面(采用DX-20型号的绝缘胶固定),如图2所示;
(2)将带芯片的陶瓷基板固定在具有焊盘的印制电路板4上(采用DX-20型号的绝缘胶固定),如图3所示;
(3)在焊盘5上放置熔融焊料6,利用毛细力驱动焊料从下层焊盘至芯片电极,采用11kw的回流焊设备,在印制电路板上放置熔点为217℃金锡共晶焊料,并于3s的时间内加热升温至230℃,使焊料熔化,并在毛细力驱动下流向芯片电极,实现芯片与印制电路板的电气连接,从而完成焊接过程。
实施例1在下层印制电路板焊盘上涂好的一层焊料,采用回流焊的方法,使熔融的焊料液滴在毛细力驱动下流向led芯片电极并与led芯片电极连接,就形成了具有保护散热功能,以及可以提供可靠电气连接的去金属化陶瓷基板,可参照图4。经测试焊接强度满足LED灯具的正常使用要求,在保证可靠的电气性能的前提下,整个生产流程的生产时间小于1min,大大减少了生产时间,节约了生产成本。
以上实施例仅为本发明较优的实施方式,仅用于解释本发明,而非限制本发明,本领域技术人员在未脱离本发明精神实质下所作的改变、替换、修饰等均应属于本发明的保护范围。
Claims (10)
1.一种具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,包括陶瓷基板主体及表面毛细微结构;所述表面毛细微结构设置在陶瓷基板主体的两侧,所述表面毛细微结构具体为毛细微槽。
2.根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,所述表面毛细微结构为两个呈镜像对称的毛细微槽,两个毛细微槽分别设于陶瓷基板主体的两侧,两个毛细微槽不连通;所述毛细微槽为陶瓷基板主体从上表面与侧面向内刻蚀形成的。
3.根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,所述毛细微槽包括矩形微槽、锯齿形微槽及圆形微槽。
4.根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,制备所述毛细微槽的方式包括激光加工、光刻及化学刻蚀。
5.根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,所述毛细微槽的平均宽度为10μm-100μm,平均槽深为10μm-100μm。
6.根据权利要求1所述的具有表面毛细微槽结构的去金属化陶瓷基板,其特征在于,所述陶瓷基板主体的材料包括Al2O3、BeO及AlN。
7.一种权利要求1所述具有表面毛细微槽结构的去金属化陶瓷基板的焊接方法,其特征在于,包括如下步骤:
(1)将芯片(3)固定在所述具有表面毛细微槽结构的去金属化陶瓷基板的上表面;
(2)将带芯片的陶瓷基板固定在具有焊盘的印制电路板(4)上;
(3)在焊盘(5)上放置熔融焊料(6),利用毛细力驱动焊料从下层焊盘上升至芯片电极,实现芯片与印制电路板的电气连接。
8.根据权利要求7所述的焊接方法,其特征在于,步骤(1)所述固定的方式包括采用绝缘胶固定。
9.根据权利要求7所述的焊接方法,其特征在于,步骤(2)所述固定的方式包括采用绝缘胶固定或机械夹持。
10.根据权利要求7所述的焊接方法,其特征在于,步骤(3)所述熔融焊料包括金锡共晶焊料,所述金锡共晶焊料的熔点为217-230℃,金含量为10wt%-15wt%;焊接方式包括回流焊,所述回流焊设备功率为11-15kw、加热区长度为1000-2000mm,加热温度为220-240℃。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910364622.5A CN110137141A (zh) | 2019-04-30 | 2019-04-30 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
US17/607,901 US12009270B2 (en) | 2019-04-30 | 2019-11-14 | Welding method of demetallized ceramic substrate having surface capillary microgroove structure |
PCT/CN2019/118291 WO2020220643A1 (zh) | 2019-04-30 | 2019-11-14 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910364622.5A CN110137141A (zh) | 2019-04-30 | 2019-04-30 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110137141A true CN110137141A (zh) | 2019-08-16 |
Family
ID=67575903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910364622.5A Pending CN110137141A (zh) | 2019-04-30 | 2019-04-30 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US12009270B2 (zh) |
CN (1) | CN110137141A (zh) |
WO (1) | WO2020220643A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020220643A1 (zh) * | 2019-04-30 | 2020-11-05 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3323830A1 (de) * | 1983-07-01 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum aufloeten einer elektrischen schaltungsplatte auf einen grundkoerper |
JPH05291720A (ja) * | 1992-04-10 | 1993-11-05 | Cmk Corp | プリント配線板 |
US20050184387A1 (en) * | 2004-02-25 | 2005-08-25 | Collins William D.Iii | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
CN103682046A (zh) * | 2013-12-23 | 2014-03-26 | 中山市秉一电子科技有限公司 | 一种led用陶瓷基板 |
CN108447827A (zh) * | 2018-03-17 | 2018-08-24 | 郭涛 | 一种电力转换电路的封装模块 |
CN108962846A (zh) * | 2018-07-27 | 2018-12-07 | 北京新雷能科技股份有限公司 | 一种厚膜混合集成电路的封装结构及其制作方法 |
CN109059592A (zh) * | 2018-09-05 | 2018-12-21 | 中国科学院工程热物理研究所 | 微通道与纳米棒阵列的复合结构及其制备方法 |
CN209766404U (zh) * | 2019-04-30 | 2019-12-10 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6830959B2 (en) * | 2002-01-22 | 2004-12-14 | Fairchild Semiconductor Corporation | Semiconductor die package with semiconductor die having side electrical connection |
JP6032414B2 (ja) * | 2012-11-16 | 2016-11-30 | 東芝ライテック株式会社 | 発光モジュール |
US20160057855A1 (en) * | 2013-04-15 | 2016-02-25 | Heptagon Micro Optics Pte. Ltd. | Accurate Positioning and Alignment of a Component During Processes Such as Reflow Soldering |
US10163867B2 (en) * | 2015-11-12 | 2018-12-25 | Amkor Technology, Inc. | Semiconductor package and manufacturing method thereof |
DE102016105581A1 (de) * | 2016-03-24 | 2017-09-28 | Infineon Technologies Ag | Umleiten von Lotmaterial zu einer visuell prüfbaren Packungsoberfläche |
CN110137141A (zh) * | 2019-04-30 | 2019-08-16 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
-
2019
- 2019-04-30 CN CN201910364622.5A patent/CN110137141A/zh active Pending
- 2019-11-14 US US17/607,901 patent/US12009270B2/en active Active
- 2019-11-14 WO PCT/CN2019/118291 patent/WO2020220643A1/zh active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3323830A1 (de) * | 1983-07-01 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zum aufloeten einer elektrischen schaltungsplatte auf einen grundkoerper |
JPH05291720A (ja) * | 1992-04-10 | 1993-11-05 | Cmk Corp | プリント配線板 |
US20050184387A1 (en) * | 2004-02-25 | 2005-08-25 | Collins William D.Iii | Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection |
CN103682046A (zh) * | 2013-12-23 | 2014-03-26 | 中山市秉一电子科技有限公司 | 一种led用陶瓷基板 |
CN108447827A (zh) * | 2018-03-17 | 2018-08-24 | 郭涛 | 一种电力转换电路的封装模块 |
CN108962846A (zh) * | 2018-07-27 | 2018-12-07 | 北京新雷能科技股份有限公司 | 一种厚膜混合集成电路的封装结构及其制作方法 |
CN109059592A (zh) * | 2018-09-05 | 2018-12-21 | 中国科学院工程热物理研究所 | 微通道与纳米棒阵列的复合结构及其制备方法 |
CN209766404U (zh) * | 2019-04-30 | 2019-12-10 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020220643A1 (zh) * | 2019-04-30 | 2020-11-05 | 华南理工大学 | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 |
US12009270B2 (en) | 2019-04-30 | 2024-06-11 | South China University Of Technology | Welding method of demetallized ceramic substrate having surface capillary microgroove structure |
Also Published As
Publication number | Publication date |
---|---|
WO2020220643A1 (zh) | 2020-11-05 |
US20220293480A1 (en) | 2022-09-15 |
US12009270B2 (en) | 2024-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104603933B (zh) | 功率模块用基板及功率模块 | |
CN102709439B (zh) | Led陶瓷支架的制备方法 | |
CN105304577B (zh) | 多芯片组件散热封装陶瓷复合基板的制备方法 | |
CN209896097U (zh) | 一种深紫外led全无机气密封装结构 | |
KR101049698B1 (ko) | Led 어레이 모듈 및 이의 제조방법 | |
US20110260200A1 (en) | Method of fabricating non-metal led substrate and non-metal led substrate and method of fabricating led device using the non-metal led substrate and led device with the non-metal led substrate | |
CN102795841B (zh) | 一种氧化铝基陶瓷和一种陶瓷散热基板及其制备方法 | |
CN111403348B (zh) | 一种含微通道的陶瓷基板及其制备方法 | |
CN108922869A (zh) | 一种带tec-氮化铝-金属三元结构的smd封装基座 | |
KR101495409B1 (ko) | 표면 탑재 파워 led 지지부를 위한 제조 방법 및 그 제품 | |
US9082760B2 (en) | Dual layered lead frame | |
CN103296174A (zh) | 一种led倒装芯片的圆片级封装结构、方法及产品 | |
CN108155283A (zh) | 一种带围坝的陶瓷线路板制备方法及陶瓷线路板结构 | |
CN110137141A (zh) | 一种具有毛细微槽结构的去金属化陶瓷基板及其焊接方法 | |
CN104956781B (zh) | 布线基板以及电子装置 | |
US9397279B2 (en) | Electric conductive heat dissipation substrate | |
CN208093589U (zh) | 一种带围坝的陶瓷线路板结构 | |
CN103094126A (zh) | 陶瓷元器件细微立体导电线路的制备方法 | |
CN102386318A (zh) | 发光二极管的封装结构及封装方法 | |
CN209766404U (zh) | 一种具有毛细微槽结构的去金属化陶瓷基板 | |
US10998201B2 (en) | Semiconductor encapsulation structure | |
WO2018006831A1 (zh) | 设置有热沉基板的多层陶瓷印制电路板及其制造方法 | |
KR101353299B1 (ko) | 고효율 고방열구조의 led패키지 구조 및 그 제조방법 | |
CN203071126U (zh) | 无机基板 | |
US20210044084A1 (en) | Substrate for mounting a light-emitting element and light-emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |