CN103682046A - 一种led用陶瓷基板 - Google Patents
一种led用陶瓷基板 Download PDFInfo
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- 229910052802 copper Inorganic materials 0.000 claims description 3
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Abstract
一种LED用陶瓷基板,包括LED芯片和带焊盘的陶瓷基板,所述LED芯片通过金线与焊盘连接,所述的陶瓷基板上安装有金属框体,陶瓷基板的四侧面设有凹槽,所述金属框体与凹槽内的金属线路连接,所述陶瓷基板内设有供LED固晶的台阶区域,陶瓷基板内部设有第一导通孔和第二导通孔,所述第一导通孔与LED芯片的背部电路连接,所述第二导通孔与陶瓷基板的内部线路连接。本发明实现了采用无机方式对LED进行焊接封装,提供一种LED封装用陶瓷基板,尤其是针对于解决紫外LED器件不适合使用有机材料封装问题,提高器件的寿命、稳定性和可靠性;通过焊接对LED实现无缝封装,使得LED耐腐蚀、耐候性、耐紫外等方面优异,能够大幅度提高LED元器件的稳定性,可靠性和寿命。
Description
技术领域
本发明涉及LED 照明领域,尤其是LED 器件无机封装采用的带金属框体的极板。
背景技术
目前,LED 的封装多采用硅胶、环氧树脂等有机材料对芯片进行密封保护,这些材料透明性好、易于操作、能提高光取出量,但耐紫外线性能差,在紫外环境下极易老化变质,导致器件失效,因此有机材料不利于封装紫外LED 器件以及和不适合使用有机材料的器件。所以寻求抗紫外线老化简易的无机封装工艺及其配套的部件非常必要。
发明内容
针对现有技术的上述技术问题,本发明提供了一种LED用陶瓷基板,实现采用无机方式对LED 进行焊接封装,提供一种LED 封装用陶瓷基板,尤其是针对于解决紫外LED 器件不适合使用有机材料封装问题,提高器件的寿命、稳定性和可靠性。
为达到上述目的,本发明是通过以下技术方案实现的:
一种LED用陶瓷基板,包括LED芯片和带焊盘的陶瓷基板,所述LED芯片通过金线与焊盘连接,所述的陶瓷基板上安装有金属框体,陶瓷基板的四侧面设有凹槽,所述金属框体与凹槽内的金属线路连接,所述陶瓷基板内设有供LED固晶的台阶区域,陶瓷基板内部设有第一导通孔和第二导通孔,所述第一导通孔与LED芯片的背部电路连接,所述第二导通孔与陶瓷基板的内部线路连接。
所述的金属框体在20-400℃内线膨胀系数与玻璃线膨胀系数相近。
所述的金属框体线膨胀系数与玻璃线膨胀系数相差6%以内为匹配封接,所述的金属框体线膨胀系数与玻璃线膨胀系数相差超出6%为非匹配封接。
匹配封接时,所述的金属框体为可伐合金框体。
所述的可伐合金框体的线膨胀系数为4.7-5.0×10-6/℃。
所述的可伐合金框体为4J29。
非匹配封接时,所述的金属框体为钢框体、铝框体、铜框体、银框体或合金框体。
非匹配封接时,所述的金属框体和玻璃之间设有过渡层,所述过滤层的线膨胀系数在金属框体线膨胀系数和玻璃线膨胀系数之间。
本发明的有益效果如下:
本发明实现了采用无机方式对LED 进行焊接封装,提供一种LED 封装用陶瓷基板,尤其是针对于解决紫外LED 器件不适合使用有机材料封装问题,提高器件的寿命、稳定性和可靠性;通过焊接对LED 实现无缝封装,使得LED 耐腐蚀、耐候性、耐紫外等方面优异,能够大幅度提高LED 元器件的稳定性,可靠性和寿命。所述金属材料要求在20-400℃温度范围内线膨胀系数与玻璃相近,同时具备良好的焊接性能,能适应后续焊接等封装作业。本发明提供一种可用于无机焊接封装LED 的陶瓷基板部件,避免有机材料如硅胶的应用,尤其可用于紫外LED 和不适合使用有机材料器件的封装如超大功率COB 类产品封装,解决了恶劣环境下相关器件封装材料易老化变质问题。
附图说明
图1 为实施例1 陶瓷基板结构图;
图2为图1中沿A-A方向的剖视图;
图3 为实施例2 陶瓷基板结构图;
图4为图3中沿A-A方向的剖视图;
图5为实施例3 陶瓷基板结构图;
图6为图5中沿A-A方向的剖视图。
具体实施方式
下面结合具体实施例对本发明作进一步的说明,但本发明的保护范围并不限于此。
实施例1
如图1 所示,本发明的LED 用陶瓷基板,包括LED 芯片1、陶瓷基板3,陶瓷基板上的金属框体2,所述LED 芯片通过金线9 与陶瓷基板焊盘8连接。所述陶瓷基板3 内设置有供LED 固晶功能区台阶区域。在所述陶瓷基板四侧面设置凹槽4,凹槽中设置有金属10与线路5 连接。所述陶瓷基板内部设置第一导通孔2与第二导通孔6,第一导通孔2 主要实现LED芯片1与背部电路12电路连接,第二导通孔6与基板内部线路5一端连接,线路5的另一端与凹槽4被的金属10连接,实现焊接过程中金属框体7与凹槽4内金属链路连接。凹槽4内金属与陶瓷基板背部金属热沉11连接。本实施例1中的芯片为普通双电极LED芯片,需要通过两根金线、银线或者合金线实现电路连接。陶瓷基板分设第一导通孔2与第二导通孔6主要是目的是分离LED本身芯片电路与焊接电路,这样可以避免在焊接过程中大电路对LED芯片的损害。
实施例2
如图2 所示,本发明的LED用陶瓷基板,包括LED芯片1、陶瓷基板3,陶瓷基板3上的金属框体2,所述LED芯片通过金线9与陶瓷基板焊盘8连接。所述陶瓷基板3内设置有供LED固晶功能区,固晶区为一片面11,可以满足多芯片固晶需求。在所述陶瓷基板四侧面设置凹槽4,凹槽中设置有金属10与线路5连接。所述陶瓷基板内部设置第一导通孔2与第二导通孔6,第一导通孔2主要实现LED芯片1与背部电路13电路连接,第二导通孔6与基板内部线路5一端连接,线路5的另一端与凹槽4 被的金属10连接,实现焊接过程中金属框体7与凹槽4内金属链路连接。凹槽4内金属与陶瓷基板背部金属热沉12连接。陶瓷基板分设第一导通孔2与第二导通孔6主要是目的是分离LED本身芯片电路与焊接电路,这样可以避免在焊接过程中大电路对LED芯片的损害。实施例2 中芯片采用垂直芯片,只需要一根金线9与焊盘8 连接。
实施例3
如图3 所示,本发明的LED用陶瓷基板,包括LED芯片1、片面陶瓷基板3,陶瓷基板3上的金属框体7,所述LED 芯片通过共晶方式与基板焊盘9实现电器连接。所述陶瓷基板3内设置有供LED固晶功能区,固晶区为一平面5,可以满足多芯片固晶需求。在所述陶瓷基板四侧面设置凹槽4,凹槽中设置有金属11与线路8 连接。所述陶瓷基板内部设置第一导通孔2与第二导通孔6,第一导通孔2主要实现LED 芯片1 与背部电路10 电路连接,第二导通孔6与基板内部线路8一端连接,线路8的另一端与凹槽4 内的金属11 连接,实现焊接过程中金属框体7 与凹槽4 内金属11 链路连接。凹槽4 内金属11 与陶瓷基板背部金属热沉12 连接。陶瓷基板分设第一导通孔2与第二导通孔6主要是目的是分离LED本身芯片电路与焊接电路,这样可以避免在焊接过程中大电路对LED芯片的损害。实施例2中芯片采用垂直倒装芯片,可通过共晶方式与基板电器连接。
本发明实现采用无机方式对LED 进行焊接封装,提供一种LED 封装用陶瓷基板,尤其是针对于解决紫外LED 器件不适合使用有机材料封装问题,提高器件的寿命、稳定性和可靠性。
本发明LED 用陶瓷基板,通过陶瓷金属化技术预先金属化一层薄膜,之后通过共晶方式结合一金属框。陶瓷基板内部设置导通孔,实现LED 芯片电路连接与焊接电路导通。通过焊接对LED 实现无缝封装,使得LED 耐腐蚀、耐候性、耐紫外等方面优异,能够大幅度提高LED 元器件的稳定性,可靠性和寿命。所述金属材料要求在20-400℃温度范围内线膨胀系数与玻璃相近,同时具备良好的焊接性能,能适应后续焊接等封装作业。
本发明提供一种可用于无机焊接封装LED 的陶瓷基板部件,避免有机材料如硅胶的应用,尤其可用于紫外LED 和不适合使用有机材料器件的封装如超大功率COB 类产品封装,解决了恶劣环境下相关器件封装材料易老化变质问题。
作为改进,当金属框体材料选择与焊接用盖板相同的材质,需要为可伐合金,其线膨胀系数与玻璃的膨胀系数相差6%以内,线性膨胀系数在室温到玻璃软化范围内与玻璃相近,常用的有4J29,其线膨胀系数约为4.7-5.0×10-6/℃。采用与盖板相同材质可以增强盖板金属与陶瓷基板上金属结合。但依据情况,选择不同材质也可以,同时要保证盖板金属通过焊接与陶瓷基板上金属框体的结合,二者应为可焊接在一起的可焊金属。当然两金属膨胀系数相差超过6%时为匹配封接,如超出此范围则为非匹配封接。
作为改进,当封接为非匹配封接时,所述金属同时也可以是钢、铝、铜、银等金属,也可是各种合金。解决非匹配封接主要有两种方法:1.采用延展性好的薄壁金属,利用金属本身的塑性解决应力问题;2.借助某些膨胀系数两金属之间的物质作为过渡层,从而将非匹配封接变为匹配封接。
本发明实现了采用无机方式对LED 进行焊接封装,提供一种LED 封装用陶瓷基板,尤其是针对于解决紫外LED 器件不适合使用有机材料封装问题,提高器件的寿命、稳定性和可靠性;通过焊接对LED 实现无缝封装,使得LED 耐腐蚀、耐候性、耐紫外等方面优异,能够大幅度提高LED 元器件的稳定性,可靠性和寿命。所述金属材料要求在20-400℃温度范围内线膨胀系数与玻璃相近,同时具备良好的焊接性能,能适应后续焊接等封装作业。本发明提供一种可用于无机焊接封装LED 的陶瓷基板部件,避免有机材料如硅胶的应用,尤其可用于紫外LED 和不适合使用有机材料器件的封装如超大功率COB 类产品封装,解决了恶劣环境下相关器件封装材料易老化变质问题。
上述实施例仅用于解释说明本发明的发明构思,而非对本发明权利保护的限定,凡利用此构思对本发明进行非实质性的改动,均应落入本发明的保护范围。
Claims (8)
1.一种LED用陶瓷基板,其特征在于:包括LED芯片和带焊盘的陶瓷基板,所述LED芯片通过金线与焊盘连接,所述的陶瓷基板上安装有金属框体,陶瓷基板的四侧面设有凹槽,所述金属框体与凹槽内的金属线路连接,所述陶瓷基板内设有供LED固晶的台阶区域,陶瓷基板内部设有第一导通孔和第二导通孔,所述第一导通孔与LED芯片的背部电路连接,所述第二导通孔与陶瓷基板的内部线路连接。
2.如权利要求1所述的LED用陶瓷基板,其特征在于:所述的金属框体在20-400℃内线膨胀系数与玻璃线膨胀系数相近。
3.如权利要求1所述的LED用陶瓷基板,其特征在于:所述的金属框体线膨胀系数与玻璃线膨胀系数相差6%以内为匹配封接,所述的金属框体线膨胀系数与玻璃线膨胀系数相差超出6%为非匹配封接。
4.如权利要求3所述的LED用陶瓷基板,其特征在于:匹配封接时,所述的金属框体为可伐合金框体。
5.如权利要求4所述的LED用陶瓷基板,其特征在于:所述的可伐合金框体的线膨胀系数为4.7-5.0×10-6/℃。
6.如权利要求5所述的LED用陶瓷基板,其特征在于:所述的可伐合金框体为4J29。
7.如权利要求3所述的LED用陶瓷基板,其特征在于:非匹配封接时,所述的金属框体为钢框体、铝框体、铜框体、银框体或合金框体。
8.如权利要求3所述的LED用陶瓷基板,其特征在于:非匹配封接时,所述的金属框体和玻璃之间设有过渡层,所述过滤层的线膨胀系数在金属框体线膨胀系数和玻璃线膨胀系数之间。
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