CN201549531U - 一种大功率led封装结构 - Google Patents

一种大功率led封装结构 Download PDF

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CN201549531U
CN201549531U CN2009202450125U CN200920245012U CN201549531U CN 201549531 U CN201549531 U CN 201549531U CN 2009202450125 U CN2009202450125 U CN 2009202450125U CN 200920245012 U CN200920245012 U CN 200920245012U CN 201549531 U CN201549531 U CN 201549531U
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radiating block
chip
power led
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substrate
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王少卿
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Irico Group Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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Abstract

本实用新型涉及一种大功率LED封装结构,包括基板(9)及连接在基板(9)上的倒梯形散热块(2),该散热块(2)上设有放置芯片(4)的凹槽,荧光粉(6)填装于放置芯片(4)的凹槽中,其特征在于:芯片(4)倒装在该凹槽中,且芯片(4)焊接在散热块(2)上并通过硅片(5)与散热块(2)隔离,芯片(4)的连接端通过内引线(1)与设置在倒梯形散热块(2)两端的外引线支架(8)相连,所述外引线支架(8)插接在倒梯形散热块(2)外侧的绝缘成型材料(7)上;透镜(3)封装在包括放置芯片(4)的散热块凹槽在内的绝缘成型材料(7)上。该能够有效地提高芯片的散热效果,并延长LED使用寿命。

Description

一种大功率LED封装结构
技术领域
本实用新型涉及一种照明灯的封装方式,特别是一种大功率LED封装结构。
背景技术
传统的大功率LED封装是整个灯体均在一块铝基板上制造,在工作中芯片产生的热量不宜发散,而且由于长时间使用,导致温度升高而死灯的故障一直是大功率LED的一个问题。并且由于传统封装中散热块一般都采用胶体等一些粘结材料进行绝缘处理,导致散热块的热量不宜快速散发导出,致使热量集聚,影响发光效率。
关于该类大功率的LED封装结构在现有的技术中,采用将LED晶片焊接在导热柱上,LED晶片通过内引线连接外引线,在LED晶片上点上荧光粉,并用透镜灌封,成型并烘干脱模。主要使用了单一的将LED晶片与导热柱进行金属焊接以获得导热效果。
上述结构的不足在于其采用了芯片正装结构,基板与导热柱为分体结构,导致其散热效果不好,且其热量也未过导热性好的基座将热量很好的散出,并且其采取的绝缘成型材料也影响其散热效果。
发明内容
为了解决上述所存在的问题,本实用新型提供一种大功率LED封装结构,该结构能够有效地提高芯片的散热效果,并延长LED使用寿命。
本实用新型所提供的一种大功率LED封装结构是通过下述技术方案来实现的,包括基板及连接在基板上的倒梯形散热块,该散热块上设有放置芯片的凹槽,荧光粉填装于放置芯片的凹槽中,其特征在于:芯片倒装在该凹槽中,且芯片通过硅片与散热块隔离,芯片的连接端通过内引线与设置在倒梯形散热块两端的外引线支架相连,所述外引线支架插接在倒梯形散热块外侧的绝缘成型材料上;透镜封装在包括放置芯片的散热块凹槽在内的绝缘成型材料上。
所述芯片倒装结构为芯片连接内引线的端面设在散热块凹槽底面上的硅片与芯片相接端面上。
所述的散热块外围的绝缘成型材料为一种多孔绝缘成型材料或高导热陶瓷器件。所述多孔绝缘成型材料为高分子复合多孔树脂材料或由树脂、氮化铝、氮化硼或碳化硅合成的导热性能好的多孔绝缘材料;所述高导热陶瓷器件为氮化铝陶瓷。
所述基板与散热块为一体结构或分体结构,分体结构的基板与散热块通过金属焊接固定。
所述基板与散热块采取铜质材料或银质材料。
所述内引线为金线或银线。
本实用新型的优点:由于采用芯片倒装,工作过程中产生的热量将更直接的向下传递至散热块;由于铜及银的导热系数较铝和硅等大很多,基板与散热块采用铜或银来取代传统的铝和硅作为基质材料,并且基板与散热块采用一体结构或金属焊接方式,所以热量能够更多更快的散出;在芯片与散热块的连接方式上,取代了以往用胶将散热块与基板粘接代之以金属焊接,降低了热阻,使得热量更直接有效的散发,大大增加了散热效果。同时散热块周围采用多孔绝缘成型材料或高导热陶瓷器件,进一步增加了散热效果,提高发光效率,有效解决高温死灯的问题,延长LED使用寿命。
附图说明
图1是本实用新型结构的剖视示意图。
图中:1-内引线(金线),2-散热块,3-透镜,4-芯片,5-硅片,6-荧光粉,7-绝缘成型材料,8-外引线支架,9-基板。
具体实施方式
下面结合实施例对本实用新型做进一步详细说明。
参见附图1,该大功率LED封装结构,包括基板9及连接在基板9上的倒梯形散热块2,该散热块2上设有放置芯片4的凹槽,荧光粉6填装于放置芯片4的凹槽中,其中:芯片4倒装在该凹槽中,芯片4倒装结构为芯片4连接内引线1的端面设在散热块2凹槽底面上的硅片5与芯片4相接端面上,所述内引线1为金线或银线;且芯片4通过硅片5与散热块2隔离,芯片4的连接端通过内引线1与设置在倒梯形散热块2两端的外引线支架8相连,所述外引线支架8插接在倒梯形散热块2外侧的绝缘成型材料7上,该绝缘成型材料7为多孔绝缘成型材料;多孔绝缘成型材料为高分子复合多孔树脂材料或者在硅树脂中加入一定量氮化铝、氮化硼或碳化硅形成导热性能好的多孔绝缘材料。
上述多孔绝缘成型材料还可以用高导热陶瓷材料替代,该高导热陶瓷材料为氮化铝陶瓷,其导热性能同多孔绝缘成型材料。
透镜3封装在包括放置芯片4的散热块凹槽在内的多孔绝缘成型材料7上。
基板9与散热块2通过金属焊接固定或基板9与散热块2为一体结构。基板9与散热块2采用一体结构或金属焊接方式,所以热量能够更多更快的散出。
基板9与散热块2采取铜质材料或银质材料,取代传统的铝和硅作为基质材料,由于铜质材料或银质材料的导热系数较大,有利于热量很好的散出,增加了散热效果。
在本实用新型的封装方式中,先在散热块2的凹槽内用银浆粘接硅片5,再将芯片4倒置封装在硅片5上;将芯片4正负极通过内引线1与外引线8连接之后,在放置芯片4的凹槽内点上荧光粉6;用多孔绝缘成型材料7固定支架8,采用该材料可以使得热量更直接有效的散发,大大增加了散热效果。待凝固后,将基板9用金属焊接的方式与散热块2焊接固定。或者将基板9和散热块2设计为一体。该基板9与散热块2的材料采用导热系数较大的铜质材料或银质材料,这样可以使得热量能够更快地散出,同时也有助于提高发光效率。
本实用新型的芯片4在凹槽内是倒装结构。上述的内引线1为金线,外引线8采用支架。
在本实用新型中由于采用芯片倒装,工作过程中产生的热量将更直接的向下传递至散热块,并且由于铜及银的导热系数较铝和硅等大很多,基板及散热块采用一体结构或焊接结构,用铜或银材质来取代铝和硅材料,所以热量能够更多更快的散出;并且取代了以往用胶将散热块与基板粘接代之以金属焊接,降低了热阻,使得热量更直接有效的散发,大大增加了散热效果。同时散热块周围采用多孔绝缘成型材料进一步增加了散热效果。本实用新型采取多种增加散热效果的方式来完成的其散热的目的。

Claims (8)

1.一种大功率LED封装结构,包括基板(9)及连接在基板(9)上的倒梯形散热块(2),该散热块(2)上设有放置芯片(4)的凹槽,荧光粉(6)填装于放置芯片(4)的凹槽中,其特征在于:芯片(4)倒装在该凹槽中,且芯片(4)焊接在散热块(2)上并通过硅片(5)与散热块(2)隔离,芯片(4)的连接端通过内引线(1)与设置在倒梯形散热块(2)两端的外引线支架(8)相连,所述外引线支架(8)插接在倒梯形散热块(2)外侧的绝缘成型材料(7)上;透镜(3)封装在包括放置芯片(4)的散热块凹槽在内的绝缘成型材料(7)上。
2.根据权利要求1所述的一种大功率LED封装结构,其特征在于:所述芯片(4)倒装结构为芯片(4)连接内引线(1)的端面设在散热块(2)凹槽底面上的硅片(5)与芯片(4)相接端面上。
3.根据权利要求1所述的一种大功率LED封装结构,其特征在于:所述的散热块(2)外围的绝缘成型材料(7)为多孔绝缘成型材料或高导热陶瓷器件。
4.根据权利要求3所述的一种大功率LED封装结构,其特征在于:所述多孔绝缘成型材料为高分子复合多孔树脂材料或由树脂与氮化铝、氮化硼或碳化硅合成的多孔绝缘材料。
5.根据权利要求3所述的一种大功率LED封装结构,其特征在于:所述高导热陶瓷器件为氮化铝陶瓷。
6.根据权利要求1所述的一种大功率LED封装结构,其特征在于:所述基板(9)与散热块(2)为一体结构或分体结构,分体结构的基板(9)与散热块(2)通过金属焊接固定。
7.根据权利要求1所述的一种大功率LED封装结构,其特征在于:所述基板(9)与散热块(2)采取铜质材料或银质材料。
8.根据权利要求1所述的一种大功率LED封装结构,其特征在于:所述内引线(1)为金线或银线。
CN2009202450125U 2009-10-30 2009-10-30 一种大功率led封装结构 Expired - Fee Related CN201549531U (zh)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522399A (zh) * 2011-12-23 2012-06-27 彩虹集团公司 一种led封装结构
CN102563452A (zh) * 2010-09-29 2012-07-11 三星电子株式会社 具有发光二极管封装件的背光组件及具有其的显示装置
CN103090231A (zh) * 2013-01-22 2013-05-08 钦州盛和电子科技有限公司 大功率led模块及其制作方法
CN103682046A (zh) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 一种led用陶瓷基板
CN103779306A (zh) * 2014-01-26 2014-05-07 清华大学 一种封装结构、封装方法及在封装方法中使用的模板
CN105140371A (zh) * 2015-07-07 2015-12-09 宏齐光电子(深圳)有限公司 一种led基板及led封装
CN105493300A (zh) * 2013-08-16 2016-04-13 株式会社流明斯 板上芯片式发光元件封装及其制作方法
CN108538999A (zh) * 2012-09-25 2018-09-14 Lg伊诺特有限公司 发光器件封装

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102563452A (zh) * 2010-09-29 2012-07-11 三星电子株式会社 具有发光二极管封装件的背光组件及具有其的显示装置
US8870402B2 (en) 2010-09-29 2014-10-28 Samsung Display Co., Ltd. Backlight assembly having light emitting diode package and display apparatus having the same
CN102563452B (zh) * 2010-09-29 2015-12-09 三星显示有限公司 具有发光二极管封装件的背光组件及具有其的显示装置
CN102522399A (zh) * 2011-12-23 2012-06-27 彩虹集团公司 一种led封装结构
CN108538999A (zh) * 2012-09-25 2018-09-14 Lg伊诺特有限公司 发光器件封装
CN103090231A (zh) * 2013-01-22 2013-05-08 钦州盛和电子科技有限公司 大功率led模块及其制作方法
CN105493300A (zh) * 2013-08-16 2016-04-13 株式会社流明斯 板上芯片式发光元件封装及其制作方法
CN103682046A (zh) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 一种led用陶瓷基板
CN103779306A (zh) * 2014-01-26 2014-05-07 清华大学 一种封装结构、封装方法及在封装方法中使用的模板
CN105140371A (zh) * 2015-07-07 2015-12-09 宏齐光电子(深圳)有限公司 一种led基板及led封装

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