TW202029422A - 積體電路封裝結構及其製造方法 - Google Patents

積體電路封裝結構及其製造方法 Download PDF

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TW202029422A
TW202029422A TW108107848A TW108107848A TW202029422A TW 202029422 A TW202029422 A TW 202029422A TW 108107848 A TW108107848 A TW 108107848A TW 108107848 A TW108107848 A TW 108107848A TW 202029422 A TW202029422 A TW 202029422A
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packaging
heat dissipation
packaging material
dissipation structure
package
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TW108107848A
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TWI746939B (zh
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陳鵬
周厚德
張保華
顧超
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大陸商長江存儲科技有限責任公司
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Abstract

一種積體電路(IC)封裝結構，包括：封裝基底、一個或複數個晶片、封裝材料、至少一個溝槽和散熱結構。一個或複數個晶片設置在封裝基底上。封裝材料設置在封裝基底上，並被配置為將一個或複數個晶片封裝在封裝基底上。至少一個溝槽設置在封裝材料中。散熱結構的至少一部分設置在至少一個溝槽中。可以通過散熱結構改善IC封裝結構的冷卻能力，而不會顯著增大IC封裝結構的尺寸。

Description

積體電路封裝結構及其製造方法
本公開內容關於積體電路(IC)封裝結構及其製造方法，並且具體而言，關於包括散熱結構的IC封裝結構及其製造方法。
在半導體製造製程中，積體電路(IC)封裝是被配置為用模塑料封裝積體電路的一個或複數個半導體晶片的步驟，用於防止半導體晶片被外部因素損壞。通常，散熱器設置在模塑料上方用於散熱。然而，由於模塑料的熱傳遞係數太低，散熱性能受到限制，特別是當需要較高冷卻能力時，散熱器將顯著增加IC封裝的總尺寸。
本公開內容提供了一種積體電路(IC)封裝結構及其製造方法。溝槽形成在封裝材料中，並且散熱結構至少部分地設置在溝槽中，用於減小散熱結構與封裝材料封裝的晶片之間的距離。可以相應地改善IC封裝結構的冷卻能力，而不會顯著增加IC封裝結構的尺寸。
根據本公開內容的實施例，提供了一種積體電路(IC)封裝結構。IC封裝結構包括：封裝基底、設置在封裝基底上的一個或複數個晶片、封裝材料、至少一個溝槽以及散熱結構。封裝材料設置在封裝基底上，並被配置為將一個或複數個晶片封裝在封裝基底上。至少一個溝槽設置在封裝材料中。散熱結構的至少一部分設置在至少一個溝槽中。
在一些實施例中，散熱結構的熱傳遞係數高於封裝材料的熱傳遞係數。
在一些實施例中，散熱結構由封裝材料與一個或複數個晶片隔離。
在一些實施例中，散熱結構包括設置在至少一個溝槽中的第一部分和設置在封裝材料的表面上的第二部分。
在一些實施例中，第一部分與第二部分直接連接。
在一些實施例中，第二部分的材料成分與第一部分的材料成分相同。
在一些實施例中，第二部分的材料成分與第一部分的材料成分不同。
在一些實施例中，第一部分包括複數個第一金屬顆粒，第二部分包括複數個第二金屬顆粒，並且每個第二金屬顆粒的尺寸大於每個第一金屬顆粒的尺寸。
在一些實施例中，封裝材料包括環氧模塑料(epoxy molding compound，EMC)。
根據本公開內容的實施例，提供了一種IC封裝結構的製造方法。製造方法包括以下步驟。將一個或複數個晶片設置在封裝基底上。在封裝基底上形成封裝材料。封裝材料被配置為將一個或複數個晶片封裝在封裝基底上。在封裝材料中形成至少一個溝槽。在封裝材料上形成散熱結構，並且在至少一個溝槽中形成散熱結構的至少一部分。
在一些實施例中，形成散熱結構的步驟包括以下步驟。在至少一個溝槽中形成第一漿料。對第一漿料執行第一固化製程，以形成散熱結構的第一部分。
在一些實施例中，形成散熱結構的步驟還包括在所述至少一個溝槽中形成第一漿料之後在封裝材料的表面上形成第二漿料。
在一些實施例中，形成散熱結構的步驟還包括對第二漿料執行第二固化製程，以在封裝材料的表面上形成散熱結構的第二部分，其中，在第一固化製程之後形成第二漿料。
在一些實施例中，在第一固化製程之前形成第二漿料，並且第二漿料通過第一固化製程在封裝材料的表面上固化成散熱結構的第二部分。
在一些實施例中，第二漿料的材料成分與第一漿料的材料成分相同。
在一些實施例中，第二漿料的材料成分與第一漿料的材料成分不同。
在一些實施例中，第一漿料包括複數個第一金屬顆粒，第二漿料包括複數個第二金屬顆粒，並且每個第二金屬顆粒的尺寸大於每個第一金屬顆粒的尺寸。
在一些實施例中，製造方法還包括在形成散熱結構的步驟之後執行切割製程。
在一些實施例中，製造方法還包括在形成封裝材料的步驟之後並且在形成至少一個溝槽的步驟之前執行切割製程。
在一些實施例中，散熱結構的熱傳遞係數高於封裝材料的熱傳遞係數。
根據本公開內容的說明書、申請專利範圍和圖式，本領域技術人員可以理解本公開內容的其他方面。
儘管討論了具體的配置和佈置，但應該理解，這僅僅是為了說明的目的而進行的。相關領域的技術人員將認識到，在不脫離本公開內容的精神和範圍的情況下，可以使用其他配置和佈置。對於相關領域的技術人員顯而易見的是，本公開內容還可以用於各種其他應用中。
應注意到，在說明書中對“一個實施例”、“實施例”、“一些實施例”等的引用指示所描述的實施例可以包括特定的特徵、結構或特性，但是每個實施例可能不一定包括該特定的特徵、結構或特性。而且，這樣的短語不一定指代相同的實施例。此外，當結合實施例描述特定特徵、結構或特性時，無論是否明確描述，結合其他實施例來實現這樣的特徵、結構或特性都會在相關領域的技術人員的知識範圍內。
通常，可以至少部分地從上下文中的用法理解術語。例如，如本文所用的術語“一個或複數個”至少部分取決於上下文，可用於以單數意義描述任何特徵、結構或特性，或可用於以複數意義描述特徵、結構或特性的組合。類似地，至少部分取決於上下文，諸如“一”、“一個”或“該”的術語同樣可以被理解為表達單數用法或表達複數用法。另外，術語“基於”可以被理解為不一定旨在傳達排他性的因素集合，而是可以允許存在不一定明確描述的其他因素，這同樣至少部分地取決於上下文。
應當容易理解的是，本公開內容中的“在……上”、“在……之上”和“在……上方”的含義應以最寬泛的方式來解釋，使得“在……上”不僅意味著“直接在某物上”，而且還包括其間具有中間特徵或層的“在某物上”的含義，並且“在……之上”或“在……上方”不僅意味著“在某物之上”或“在某物上方”的含義，而且還可以包括其間沒有中間特徵或層的“在某物之上”或“在某物上方”的含義(即，直接在某物上)。
此外，為了便於描述，可以在本文使用諸如“在……之下”、“在……下方”、“下”、“在……之上”、“上”等的空間相對術語來描述如圖所示的一個元件或特徵與另一個元件或特徵的關係。除了圖式中所示的取向之外，空間相對術語旨在涵蓋設備在使用或操作中的不同取向。該裝置可以以其他方式定向(旋轉90度或處於其他取向)並且同樣可以相應地解釋本文使用的空間相關描述詞。
請參考第1圖。第1圖是示出根據本公開內容的第一實施例的積體電路(IC)封裝結構的示意圖。如第1圖所示，IC封裝結構101包括：封裝基底10、設置在封裝基底10上的一個或複數個晶片22、封裝材料40、至少一個溝槽TR和散熱結構50。封裝材料40設置在封裝基底10上並被配置為將一個或複數個晶片22封裝在封裝基底10上。應當注意，本公開內容中的圖式是用於說明目的的簡化示意圖，並且晶片22實際上完全由封裝材料40覆蓋和封裝。至少一個溝槽TR設置在封裝材料40中。散熱結構50的至少一部分設置在至少一個溝槽TR中。IC封裝結構101的冷卻能力可以通過散熱結構50得到改善，因為散熱結構50通過設置在封裝材料40內的溝槽TR中而變得更靠近晶片22，而且IC封裝結構的尺寸不會由於散熱結構50而增加。
本公開內容中的散熱結構50可應用於不同類型的IC封裝技術，例如球柵陣列(BGA)封裝、四邊扁平封裝(QFP)、四邊扁平無引線(QFN)封裝、平面網格陣列陣列(LGA)封裝、引腳柵格陣列(PGA)封裝或其他合適的IC封裝技術。在一些實施例中，封裝基底10可以由合適的絕緣材料或/及介電材料形成。例如，封裝基底10可以包括塑膠基底，例如環氧基底、雙馬來醯亞胺三嗪(BT)樹脂基底，或由能夠為晶片22提供物理支撐的其他合適材料製成的基底。在一些實施例中，封裝基底10可以包括設置在絕緣材料中的多層導電線(未示出)，並且不同層的導電線可以通過封裝基底10中的連接過孔彼此連接。在一些實施例中，晶片22可以設置在封裝基底10的第一表面上，複數個連接結構60(例如BGA封裝中的焊球)可以設置在封裝基底10的第二表面上，第二表面可以在垂直方向Z上與第一表面相對。垂直方向Z可以被認為是封裝基底10的厚度方向，但不限於此。在一些實施例中，每個晶片22可以通過接合線30(例如鋁線、銅線、銀線或金線)電連接到封裝基底10，並且晶片22可以經由接合線30和封裝基底10電連接到連接結構60，但不限於此。
每個晶片22可以是用於任何合適目的的晶片。在一些實施例中，每個晶片22可以是IC晶片，包括用於資料儲存、計算或/及處理的電路。一些晶片22可以在垂直方向Z上堆疊。例如，第二晶片22B可以在垂直方向Z上設置在第一晶片22A上。在一些實施例中，第二晶片22B可以小於第一晶片22A，以便在第一晶片22A上提供所需的接合區域，但不限於此。在一些實施例中，沿垂直方向Z堆疊的晶片22的尺寸可以基本上彼此相等，並且晶片22可以分別在垂直於垂直方向Z的水平方向上移位，以便在每個晶片22上提供所需的接合區域。在一些實施例中，介質層20可以設置在晶片22和封裝基底10之間或/及晶片22之間，並且每個介質層20可以是黏合膜、聚合物膜或/及間隔體膜。
封裝材料40可以包括塑膠材料，例如環氧模塑料(epoxy molding compound，EMC)，或其他合適的絕緣材料。在一些實施例中，散熱結構50的熱傳遞係數可以高於封裝材料40的熱傳遞係數。例如，散熱結構50可以包括金屬，例如銀，或者各自具有較高熱傳遞係數的其他合適的材料。銀的導熱率約為429W/(m⋅K)，EMC的導熱率約為0.8W/(m⋅K)。本實施例中的散熱結構50可以視為嵌入封裝材料40中的散熱結構，用於提供從晶片22到IC封裝結構101的表面的更好的傳熱路徑。封裝材料40的一部分在垂直方向Z上仍位於散熱結構50和晶片22之間。即，溝槽TR不會穿透晶片22上方的封裝材料40，並且散熱結構50可以由封裝材料40與一個或複數個晶片22隔離。在一些實施例中，散熱結構50可以在垂直方向Z上對應於至少一個晶片22設置，但不限於此。可以根據封裝基底10中的堆疊晶片22或/及電路上的熱分佈來進一步修改散熱結構50的位置或/及溝槽TR的深度。
如第1圖所示，IC封裝結構101的製造方法可包括以下步驟。將一個或複數個晶片22設置在封裝基底10上。在封裝基底10上形成封裝材料40。封裝材料40被配置為將一個或複數個晶片22封裝在封裝基底10上。在封裝材料40中形成至少一個溝槽TR。在封裝材料40上形成散熱結構50，並且在至少一個溝槽TR中形成散熱結構50的至少一部分。
請參考第2圖和第1圖。第2圖是根據本公開內容的實施例的第1圖中的IC封裝結構101的製造方法的流程圖。如第2圖和第1圖所示，形成散熱結構50的方法可包括但不限於以下步驟。在步驟S11中，在封裝材料40中形成至少一個溝槽TR。溝槽TR可以通過雷射雕刻製程、蝕刻製程或其他合適的方法形成。在步驟S12中，可以在至少一個溝槽TR中形成第一漿料P1。第一漿料P1可包括金屬、金屬化合物、黏合劑、分散劑、溶劑或其他合適的成分。在一些實施例中，第一漿料P1可以是包含銀顆粒的銀漿料，但不限於此。隨後，在步驟S13中，對第一漿料P1執行第一固化製程，以在溝槽TR中形成散熱結構50。在一些實施例中，根據第一漿料P1的固化要求，第一固化製程可包括熱固化製程、光固化製程或其他合適的固化方法。第一漿料P1可以固化並凝固成位於溝槽TR中的散熱結構50。值得注意的是，形成散熱結構50的方法不限於上述步驟。在一些實施例中，散熱結構50可以通過在溝槽TR外部執行的其他合適的方法(例如，金屬射出成型)形成，並且隨後放置在溝槽TR中。
IC封裝結構101的冷卻能力可以在不增加IC封裝結構101的尺寸的情況下得到改善，因為散熱結構50設置在封裝材料40內的溝槽TR中，並且具有較高熱傳遞係數的散熱結構50變得更接近封裝基底10上的晶片22。
以下描述將詳細說明本公開內容的不同實施例。為了簡化描述，以下每個實施例中的相同部件用相同的符號進行標記。為了更容易理解實施例之間的差異，以下描述將詳細說明不同實施例之間的不同之處，並且將不再重複描述相同的特徵。
請參考第3圖和第4圖。第3圖是示出根據本公開內容的第二實施例的IC封裝結構102的示意圖。第4圖是示出IC封裝結構103中的散熱結構50的第二部分50B的示意圖。如第3圖和第4圖所示，IC封裝結構102與上述第一實施例中的IC封裝結構的區別在於IC封裝結構102中的散熱結構50可包括設置在至少一個溝槽TR中的第一部分50A和設置在封裝材料40的表面上的第二部分50B。在一些實施例中，第一部分50A可以與第二部分50B直接連接。在一些實施例中，第二部分50B的材料成分可以與第一部分50A的材料成分相同，例如第一實施例中描述的散熱結構50的材料，但不限於此。在一些實施例中，第二部分50B的材料成分可以與第一部分50A的材料成分不同。例如，如第4圖所示，設置在封裝材料40的頂表面上的散熱結構50的第二部分50B可以具有不平坦表面，用於增加第二部分50B的表面面積並增強散熱結構50的冷卻能力。在一些實施例中，可以使用複數個金屬顆粒(未示出)來形成第二部分50B的不平坦表面。在一些實施例中，散熱結構50的第一部分50A可包括複數個第一金屬顆粒(例如銀粉，未示出)，散熱結構50的第二部分50B可包括複數個第二金屬顆粒(未示出)，每個第二金屬顆粒的尺寸可以大於每個第一金屬顆粒的尺寸，因為形成第二部分50B的不平坦表面需要較大的金屬顆粒，但不限於此。可以通過調節第二部分50B中使用的金屬顆粒的尺寸來控制第二部分50B的不平坦表面的粗糙度。在一些實施例中，第二部分50B的不平坦表面也可以通過其他合適的方法形成。第二部分50B在垂直方向Z上的厚度可以是約0.01毫米或小於0.01毫米，並且可以通過第二部分50B進一步提高IC封裝結構102的冷卻能力，而無需顯著增大IC封裝結構102的尺寸。
請參考第5圖至第7圖以及第3圖。第5圖是根據本公開內容的實施例的IC封裝結構102的製造方法的流程圖。第6圖是根據本公開內容的另一實施例的IC封裝結構102的製造方法的流程圖。第7圖是示出根據本公開內容的又一實施例的IC封裝結構102的製造方法的示意圖。如第5圖和第3圖所示，在一些實施例中，形成散熱結構50的方法可包括但不限於以下步驟。在步驟S21中，在封裝材料40中形成至少一個溝槽TR。在步驟S22中，可以在至少一個溝槽TR中形成第一漿料P1。隨後，在步驟S23中，對第一漿料P1執行第一固化製程。第一漿料P1可以通過第一固化製程在溝槽TR中固化和凝固成散熱結構50的第一部分50A。在形成散熱結構50的第一部分50A的步驟之後，可以進行步驟S24以在封裝材料40的表面上形成第二漿料P2。即，第二漿料P2可以在至少一個溝槽TR中形成第一漿料P1的步驟之後形成並且可以在第一固化製程之後形成，但不限於此。隨後，在步驟S25中，可以對第二漿料P2執行第二固化製程，以在封裝材料40的表面上形成散熱結構50的第二部分50B。
在一些實施例中，根據第二漿料P2的固化要求，第二固化製程可包括熱固化製程、光固化製程或其他合適的固化方法。第二漿料P2可以在封裝材料40的表面上固化並凝固成散熱結構50的第二部分50B。第二漿料P2可以通過噴塗製程或其他合適的方法形成在封裝材料40的表面上。在一些實施例中，第二漿料P2的材料成分可以與第一實施例中描述的第一漿料P1的材料成分相同。在一些實施例中，第二漿料P2的材料成分可以與第一漿料P1的材料成分不同。例如，第一漿料P1可包括複數個第一金屬顆粒，第二漿料P2可包括複數個第二金屬顆粒，並且每個第二金屬顆粒的尺寸可大於每個第一金屬顆粒的尺寸。另外，第一漿料P1和第二漿料P2可以分別通過第一固化製程和第二固化製程固化和凝固，並且第一固化製程可以與第二固化製程不同，尤其是當第二漿料P2的材料成分可以與第一漿料P1的材料成分不同時，但不限於此。在一些實施例中，第二固化製程的製程條件也可以與第一固化製程的製程條件基本相同。另外，在一些實施例中，可以在封裝材料40的側表面上進一步形成第二漿料P2，並且封裝材料40的側表面上的第二漿料P2可以在封裝材料40的側表面上固化並凝固成散熱結構50的第二部分50B。
如第6圖和第3圖所示，在一些實施例中，形成散熱結構50的方法可包括但不限於以下步驟。在步驟S31中，在封裝材料40中形成至少一個溝槽TR。在步驟S32中，可以在至少一個溝槽TR中形成第一漿料P1。隨後，在步驟S33中，第二漿料P2可以在封裝材料40和第一漿料P1的表面上。在步驟S34中，對第一漿料P1和第二漿料P2執行第一固化製程，以分別形成散熱結構50的第一部分50A和第二部分50B。即，第二漿料P2可以在第一固化製程之前形成，並且第二漿料P2通過第一固化製程在封裝材料40的表面上固化和凝固成散熱結構50的第二部分50B。
如第7圖和第3圖所示，在一些實施例中，包括第一部分50A和連接到第一部分50A的第二部分50B的散熱結構50可以通過其他合適的方法(例如，金屬射出成型)獨立地形成，並且隨後與在其中形成有溝槽TR的封裝材料40組合。
請參考第8圖和第9圖。第8圖是示出根據本公開內容的第三實施例的IC封裝結構103的示意圖。第9圖是示出根據本公開內容的實施例的IC封裝結構103的製造方法的示意圖。如第8圖所示，IC封裝結構103與上述第二實施例中的IC封裝結構的區別在於，可以在封裝材料40中形成多於一個的溝槽TR，並且IC封裝結構103中的散熱結構50可以包括分別設置在溝槽TR中的複數個第一部分50A。可以根據封裝基底10中的堆疊晶片22或/及電路上的熱分佈來進一步修改溝槽TR的數量、溝槽TR的形狀或/及每個溝槽TR的深度。在一些實施例中，IC封裝結構103中的散熱結構50可以通過類似於上述的第5圖中所示的方法或第6圖中所示的方法形成。在一些實施例中，包括第一部分50A和連接到第一部分50A的第二部分50B的散熱結構50可以通過其他合適的方法獨立地形成，並且隨後與其中形成有溝槽TR的封裝材料40組合。
請參考第10圖、第11圖和第3圖。第10圖是根據本公開內容的第四實施例的IC封裝結構的製造方法的流程圖，第11圖是示出該實施例中的IC封裝結構的製造方法的示意圖。如第10圖和第11圖所示，IC封裝結構的製造方法可包括以下步驟。可以將複數個晶片22設置在封裝基底10上。晶片22中的至少一些可以在與垂直方向Z正交的水平方向上彼此分離地設置，水平方向(例如第11圖所示的第一方向D1)可以與封裝基底10的頂表面平行，但不限於此。封裝材料40形成在封裝基底10上並將晶片22封裝在封裝基底10上。隨後，在步驟S41中，在封裝材料40中形成至少一個溝槽TR。在步驟S42中，在溝槽TR中形成第一漿料。在步驟S43中，對第一漿料執行第一固化製程。在步驟S44中，在封裝材料40上形成第二漿料。在步驟S45中，執行第二固化製程。步驟S41至步驟S45可以類似於第5圖中描述的製造方法，將不再重複描述步驟S41至步驟S45的細節。在一些實施例中，步驟S41至步驟S45的製造方法可以由第6圖中描述的製造方法代替。隨後，在步驟S46中，可以執行切割製程。在一些實施例中，可以沿著切割線CL執行切割製程以分離封裝基底10上的一些晶片，並且切割製程可以被視為切單片製程，但不限於此。在一些實施例中，可以在形成散熱結構50的步驟之後執行切割製程，但不限於此。在一些實施例中，溝槽TR可以是沿第一方向D1延伸的直線圖案，並且沿第一方向D1佈置的晶片22可以通過切割製程彼此分離。例如，可以在對第11圖所示的結構執行切割製程之後形成第3圖中所示的三個IC封裝結構102，但不限於此。可以根據封裝基底10中的晶片22或/及電路上的熱分佈進一步修改溝槽TR在垂直方向Z上的投影形狀。
請參考第12圖、第13圖和第3圖。第12圖是根據本公開內容的第五實施例的IC封裝結構的製造方法的流程圖，第13圖是示出該實施例中的IC封裝結構的製造方法的示意圖。第3圖可以視為第13圖之後的步驟中的示意圖。如第12圖和第13圖所示，IC封裝結構的製造方法可包括以下步驟。可以將複數個晶片22設置在封裝基底10上。封裝材料40形成在封裝基底10上並將晶片22封裝在封裝基底10上。隨後，在步驟S51中，執行切割製程。在一些實施例中，可以沿著切割線CL執行切割製程以分離封裝基底10上的一些晶片，並且切割製程可以被視為切單片製程，但不限於此。如第12圖、第13圖和第3圖所示，在步驟S52中，在切割製程之後，在封裝材料40中形成至少一個溝槽TR。在步驟S53中，在溝槽TR中形成第一漿料。在步驟S54中，對第一漿料執行第一固化製程。在步驟S55中，在封裝材料40上形成第二漿料。在步驟S56中，執行第二固化製程。步驟S52至步驟S56可以類似於第5圖中描述的製造方法，將不再重複描述步驟S52至步驟S56的細節。在一些實施例中，步驟S52至步驟S56的製造方法可以由第6圖中描述的製造方法代替。在一些實施例中，可以在形成封裝材料40的步驟之後並且在形成至少一個溝槽TR的步驟之前執行切割製程。
綜上所述，在根據本公開內容的IC封裝結構及其製造方法中，散熱結構至少部分地設置在封裝材料中形成的溝槽中，用於減小散熱結構與封裝材料封裝的晶片之間的距離。可以相應地改善IC封裝結構的冷卻能力，而不會顯著增大IC封裝結構的尺寸。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10:封裝基底 20:介質層 22:晶片 22A:第一晶片 22B:第二晶片 30:接合線 40:封裝材料 50:散熱結構 50A:第一部分 50B:第二部分 60:連接結構 101:IC封裝結構 102:IC封裝結構 103:IC封裝結構 CL:切割線 D1:第一方向 P1:第一漿料 P2:第二漿料 S11-S13:步驟 S21-S25:步驟 S31-S34:步驟 S41-S46:步驟 S51-S56:步驟 TR:溝槽 Z:垂直方向
併入本文並形成說明書的一部分的圖式示出了本公開內容的實施例，並且與說明書一起進一步用於解釋本公開內容的原理並且使得相關領域技術人員能夠構成和使用本公開內容。 第1圖是示出根據本公開內容的第一實施例的積體電路(IC)封裝結構的示意圖。 第2圖是根據本公開內容的實施例的第1圖所示的IC封裝結構的製造方法的流程圖。 第3圖是示出根據本公開內容的第二實施例的IC封裝結構的示意圖。 第4圖是示出根據本公開內容的第二實施例的IC封裝結構中的散熱結構的第二部分的示意圖。 第5圖是根據本公開內容的實施例的第3圖所示的IC封裝結構的製造方法的流程圖。 第6圖是根據本公開內容的另一實施例的第3圖所示的IC封裝結構的製造方法的流程圖。 第7圖是示出根據本公開內容的又一實施例的第3圖所示的IC封裝結構的製造方法的示意圖。 第8圖是示出根據本公開內容的第三實施例的IC封裝結構的示意圖。 第9圖是示出根據本公開內容的實施例的第8圖所示的IC封裝結構的製造方法的示意圖。 第10圖是根據本公開內容的第四實施例的IC封裝結構的製造方法的流程圖。 第11圖是示出根據本公開內容的第四實施例的IC封裝結構的製造方法的示意圖。 第12圖是根據本公開內容的第五實施例的IC封裝結構的製造方法的流程圖。 第13圖是示出根據本公開內容的第五實施例的IC封裝結構的製造方法的示意圖。
10:封裝基底
20:介質層
22:晶片
22A:第一晶片
22B:第二晶片
30:接合線
40:封裝材料
50:散熱結構
60:連接結構
101:IC封裝結構
P1:第一漿料
TR:溝槽
Z:垂直方向

Claims (20)

  1. 一種積體電路(IC)封裝結構，包括： 封裝基底； 一個或複數個晶片，該一個或複數個晶片設置在該封裝基底上； 封裝材料，該封裝材料設置在該封裝基底上，並被配置為將該一個或複數個晶片封裝在該封裝基底上； 至少一個溝槽，該至少一個溝槽設置在該封裝材料中；以及 散熱結構，其中，該散熱結構的至少一部分設置在該至少一個溝槽中。
  2. 如請求項1所述的IC封裝結構，其中，該散熱結構的熱傳遞係數高於該封裝材料的熱傳遞係數。
  3. 如請求項1所述的IC封裝結構，其中，該封裝材料將該散熱結構與該一個或複數個晶片隔離。
  4. 如請求項1所述的IC封裝結構，其中，該散熱結構包括： 設置在該至少一個溝槽中的第一部分；以及 設置在該封裝材料的表面上的第二部分。
  5. 如請求項4所述的IC封裝結構，其中，該第一部分與該第二部分直接連接。
  6. 如請求項4所述的IC封裝結構，其中，該第二部分的材料成分與該第一部分的材料成分相同。
  7. 如請求項4所述的IC封裝結構，其中，該第二部分的材料成分與該第一部分的材料成分不同。
  8. 如請求項7所述的IC封裝結構，其中，該第一部分包括複數個第一金屬顆粒，該第二部分包括複數個第二金屬顆粒，並且各該第二金屬顆粒的尺寸大於各該第一金屬顆粒的尺寸。
  9. 如請求項1所述的IC封裝結構，其中，該封裝材料包括環氧模塑料(epoxy molding compound，EMC)。
  10. 一種積體電路(IC)封裝結構的製造方法，包括： 將一個或複數個晶片設置在封裝基底上； 在該封裝基底上形成封裝材料，其中，該封裝材料被配置為將該一個或複數個晶片封裝在該封裝基底上； 在該封裝材料中形成至少一個溝槽；以及 在該封裝材料上形成散熱結構，其中，在該至少一個溝槽中形成該散熱結構的至少一部分。
  11. 如請求項10所述的IC封裝結構的製造方法，其中，形成該散熱結構的步驟包括： 在該至少一個溝槽中形成第一漿料；以及 對該第一漿料執行第一固化製程，以形成該散熱結構的第一部分。
  12. 如請求項11所述的IC封裝結構的製造方法，其中，形成該散熱結構的步驟還包括： 在該至少一個溝槽中形成該第一漿料之後在該封裝材料的表面上形成第二漿料。
  13. 如請求項12所述的IC封裝結構的製造方法，其中，形成該散熱結構的步驟還包括： 對該第二漿料執行第二固化製程，以在該封裝材料的該表面上形成該散熱結構的第二部分，其中，在該第一固化製程之後形成該第二漿料。
  14. 如請求項12所述的IC封裝結構的製造方法，其中，在該第一固化製程之前形成該第二漿料，並且該第二漿料通過該第一固化製程在該封裝材料的該表面上固化成該散熱結構的第二部分。
  15. 如請求項12所述的IC封裝結構的製造方法，其中，該第二漿料的材料成分與該第一漿料的材料成分相同。
  16. 如請求項12所述的IC封裝結構的製造方法，其中，該第二漿料的材料成分與該第一漿料的材料成分不同。
  17. 如請求項16所述的IC封裝結構的製造方法，其中，該第一漿料包括複數個第一金屬顆粒，該第二漿料包括複數個第二金屬顆粒，並且各該第二金屬顆粒的尺寸大於各該第一金屬顆粒的尺寸。
  18. 如請求項10所述的IC封裝結構的製造方法，還包括： 在形成該散熱結構的步驟之後執行切割製程。
  19. 如請求項10所述的IC封裝結構的製造方法，還包括： 在形成該封裝材料的步驟之後並且在形成該至少一個溝槽的步驟之前執行切割製程。
  20. 如請求項10所述的IC封裝結構的製造方法，其中，該散熱結構的熱傳遞係數高於該封裝材料的熱傳遞係數。
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