TW201920749A - 蝕刻方法及殘渣去除方法 - Google Patents
蝕刻方法及殘渣去除方法 Download PDFInfo
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- TW201920749A TW201920749A TW107122749A TW107122749A TW201920749A TW 201920749 A TW201920749 A TW 201920749A TW 107122749 A TW107122749 A TW 107122749A TW 107122749 A TW107122749 A TW 107122749A TW 201920749 A TW201920749 A TW 201920749A
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- 238000000034 method Methods 0.000 title claims abstract description 96
- 238000005530 etching Methods 0.000 title claims abstract description 90
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 230000008569 process Effects 0.000 claims abstract description 50
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 41
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 77
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000003513 alkali Substances 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 115
- 235000012431 wafers Nutrition 0.000 description 50
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 23
- 230000007246 mechanism Effects 0.000 description 19
- 239000011261 inert gas Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003085 diluting agent Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 methanol (CH 3 OH) Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Abstract
[課題] 提供一種即便在蝕刻二氧化矽系殘渣物後進行蝕刻殘渣去除,亦難以產生對殘存之SiO2
膜的損傷之蝕刻方法及殘渣去除方法。 [解決手段] 蝕刻被形成於SiO2
膜之含有鹼成分的二氧化矽系殘渣物之蝕刻方法,係具有:第1階段,將HF氣體與H2
O氣體或醇類氣體供給至具有形成了二氧化矽系殘渣物之SiO2
膜的被處理基板,選擇性地蝕刻二氧化矽系殘渣物;及第2階段,在第1階段後,去除第1階段所致之蝕刻殘渣,第2階段,係具有:第1工程,將H2
O氣體或醇類氣體供給至被處理基板;及第2工程,加熱第1工程後之被處理基板。
Description
本發明,係關於化學性地蝕刻處理氧化矽膜之蝕刻方法及去除殘渣之殘渣去除方法。
近來,在半導體裝置的製造過程中,作為可取代電漿蝕刻之微細化蝕刻的方法,有一種被稱為化學氧化物去除處理(Chemical Oxide Removal;COR)的手法受到矚目,該化學氧化物去除處理,係不需在腔室內生成電漿而化學性地進行蝕刻。
作為COR,係已知下述之製程:在被保持成真空的腔室內,使氟化氫(HF)氣體與氨(NH3
)氣體吸附於矽氧化膜(SiO2
膜)(該矽氧化膜,係存在於被處理基板即半導體晶圓的表面),並使該些與矽氧化膜產生反應而生成六氟矽酸銨((NH4
)2
SiF6
;AFS),在下一個工程中,藉由加熱來使該六氟矽酸銨昇華,藉此,蝕刻SiO2
膜(例如,參閱專利文獻1、2)。
另一方面,例如在3D-NAND型非揮發性半導體裝置的製造過程中,係存在下述之工程:在層積多層藉由化學蒸鍍法(CVD)所形成之SiO2
膜與氮化矽膜(SiN膜)後,使用熱磷酸(H3
PO4
)且藉由濕蝕刻來去除SiN膜,形成用以形成鎢電極的空洞。此時,在去除SiN膜後,多孔之二氧化矽(SiO2
)系殘渣物於藉由CVD所形成的TEOS膜為代表之SiO2
膜(CVD-SiO2
膜)的前端部,以含有雜質(P、N、S、Si等)的低密度析出。
如專利文獻1、2般,若欲藉由HF氣體與NH3
氣體去除像這樣的SiO2
系之殘渣物時,則CVD-SiO2
膜亦會被蝕刻。對此,在專利文獻3,係表示一種可藉由HF氣體及醇類氣體或水蒸氣,對於密度相對高之熱氧化膜,以高選擇比蝕刻密度相對低之CVD-SiO2
膜的技術,並利用該技術,考慮即便為相同的SiO2
膜,亦對於CVD-SiO2
膜,將密度低之二氧化矽(SiO2
)系殘渣物選擇性地去除。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2005-39185號公報 [專利文獻2] 日本特開2008-160000號公報 [專利文獻3] 日本特開2016-25195號公報
[本發明所欲解決之課題]
但是,利用該技術,發現到在進行去除存在於CVD-SiO2
膜之前端部之二氧化矽系殘渣物的處理後,若藉由加熱處理進行殘渣去除時,則在存在於CVD-SiO2
膜的深處之密度比起CVD-SiO2
膜更低的阻擋氧化膜(阻擋SiO2
膜)會產生損傷。
因此,本發明,係以提供一種即便在蝕刻二氧化矽系殘渣物後進行蝕刻殘渣去除,亦難以產生對殘存之SiO2
膜的損傷之蝕刻方法及殘渣去除方法為目的。 [用以解決課題之手段]
為了解決上述課題,本發明之第1觀點,提供一種蝕刻方法,係蝕刻被形成於SiO2
膜之含有鹼成分的二氧化矽系殘渣物,該蝕刻方法,其特徵係,具有:第1階段,將HF氣體與H2
O氣體或醇類氣體供給至具有形成了前述二氧化矽系殘渣物之前述SiO2
膜的被處理基板,選擇性地蝕刻二氧化矽系殘渣物;及第2階段,在前述第1階段後,去除前述第1階段所致之蝕刻殘渣,前述第2階段,係具有:第1工程,將H2
O氣體或醇類氣體供給至前述被處理基板;及第2工程,加熱前述第1工程後之被處理基板。
在上述蝕刻方法中,前述含有鹼成分之二氧化矽系殘渣物,係亦可為在藉由熱磷酸之濕蝕刻來去除被形成於前述被處理基板的氮化矽膜之際所形成者。前述SiO2
膜,係亦可為藉由CVD所形成之CVD-SiO2
膜。前述被處理基板,係更具有:阻擋SiO2
膜,支撐前述CVD-SiO2
膜,密度比前述CVD-SiO2
膜低且藉由CVD所形成,前述CVD-SiO2
膜,係亦可為與前述阻擋SiO2
膜隔開間隔而延伸複數個者。
前述第1階段,係藉由「將HF氣體與H2
O氣體或醇類氣體供給至配置有前述被處理基板之腔室內」的方式來進行,前述第2階段之前述第1工程,係藉由「在維持將前述被處理基板配置於前述腔室內的狀態下,停止HF氣體並僅將H2
O氣體或醇類氣體供給至前述腔室」的方式來進行為較佳。
前述第1階段,係可在壓力為133~666Pa而溫度為0~30℃的條件下進行。又,前述第1階段,係H2
O氣體或醇類氣體相對於HF氣體+H2
O氣體或醇類氣體之合計量的流量比率(體積比率)可設成為10~50%的範圍。
前述第2階段之前述第1工程,係H2
O氣體或醇類氣體之流量可設成為100~1000sccm的範圍。前述第2階段之前述第1工程,係可在10~30℃之範圍的溫度下進行。前述第2階段之前述第1工程,係可將時間設成為5~60 sec的範圍。
前述第2階段之前述第2工程,係可在150~230℃之範圍的溫度下進行。前述第2階段之前述第2工程,係可將時間設成為30~600sec的範圍。
本發明之第2觀點,提供一種殘渣去除方法,係去除附著於SiO2
膜之含有氟成分與鹼成分的蝕刻殘渣,該殘渣去除方法,其特徵係,具有:第1工程,將H2
O氣體或醇類氣體供給至具有前述SiO2
膜之被處理基板,去除氟成分;及第2工程,加熱前述第1工程後之被處理基板,去除前述蝕刻殘渣的剩餘部分。 [發明之效果]
根據本發明,由於是在供給HF氣體與H2
O氣體或醇類氣體,選擇性地蝕刻二氧化矽系殘渣物後去除蝕刻殘渣之際,進行將H2
O氣體或醇類氣體供給至被處理基板的第1工程與加熱前述第1工程後之被處理基板的第2工程,因此,可在第1工程去除氟成分,並藉由其後的加熱,抑制對殘存於被處理基板之SiO2
膜的損傷。
以下,參閱圖面,說明關於本發明之實施形態。
<蝕刻方法> 首先,說明關於本發明之一實施形態的蝕刻方法。 在此,係說明關於3D-NAND型非揮發性半導體裝置的製造過程中之將存在於SiN膜去除後之CVD-SiO2
膜的前端部之二氧化矽系殘渣物進行蝕刻去除的方法。
圖1,係表示3D-NAND型非揮發性半導體裝置的製造過程中之去除SiN膜之前之狀態的剖面圖,具有CVD-SiO2
膜10與CVD-SiN膜12交互地層積之構成,並在該些膜形成有垂直地被埋入至先形成之溝的阻擋氧化膜(阻擋SiO2
膜)14及溝16。
作為CVD-SiO2
膜,係可將TEOS膜使用作為Si前驅物,該TEOS膜,係使用四乙氧矽(TEOS)所形成。又,阻擋氧化膜14亦相同地,雖為藉由CVD所形成之SiO2
膜,但雜質多於CVD-SiO2
膜10且低密度。
在該狀態下,使用熱磷酸(H3
PO4
),藉由濕蝕刻去除CVD-SiN膜12,如圖2所示般,形成用以形成鎢電極的空洞18。
此時,多孔之二氧化矽(SiO2
)系殘渣物20於CVD-SiO2
膜10的前端部,以含有雜質(P、N、S、Si等)的低密度進行再成長。在本實施形態中,係藉由COR處理來蝕刻去除該二氧化矽系殘渣物20。
CVD-SiO2
膜10與二氧化矽系殘渣物20,雖係皆以SiO2
作為主成分者,但在該蝕刻中,係必需相對於CVD-SiO2
膜10,以高選擇比蝕刻二氧化矽系殘渣物20。由於二氧化矽系殘渣物20,係比起CVD-SiO2
膜10更低密度,因此,根據上述專利文獻3所記載的方法,可相對於CVD-SiO2
膜10,以高選擇比蝕刻二氧化矽系殘渣物20。
亦即,在本實施形態中,係將被處理基板(該被處理基板,係在如圖2所示般之CVD-SiO2
膜10的前端部,形成有二氧化矽系殘渣物20)即半導體晶圓(以下,亦僅記載為晶圓)收容於腔室內,並將HF氣體及H2
O氣體(水蒸氣)或醇類氣體導入至腔室內且進行COR處理,藉此,以高選擇比蝕刻二氧化矽系殘渣物20。亦可進一步將惰性氣體添加至該些氣體。作為惰性氣體,係可使用N2
氣體或Ar、He等的稀有氣體。
H2
O氣體或醇類氣體,係皆含有OH基,該OH基與HF氣體一起產生蝕刻作用。比起對於密度相對高之CVD-SiO2
膜10,此時之OH基的作用,係對於密度相對低之二氧化矽系殘渣物20者更大,因此,可對於CVD-SiO2
膜10,選擇性地蝕刻二氧化矽系殘渣物20。
另外,由於阻擋氧化膜14亦由CVD所形成,因此,比起二氧化矽系殘渣物20為更高密度,對於阻擋氧化膜14,亦可選擇性地蝕刻二氧化矽系殘渣物20。
該進行蝕刻之際的壓力,係133~666Pa(1~5 Torr)的範圍為較佳,266~533Pa(2~4Torr)的範圍為更佳。又,此時之晶圓溫度,係10~30℃的範圍為較佳。
又,H2
O氣體或醇類氣體相對於HF氣體+H2
O氣體或醇類氣體之合計量的流量比率(體積比率),係10~50%的範圍為較佳,15~30%的範圍為更佳。
作為醇類氣體,係甲醇(CH3
OH)、乙醇(C2
H5
OH)、丙醇(C3
H7
OH)、丁醇(C4
H9
OH)等的一價的醇為較佳,在該些中,係乙醇為較佳。
在像這樣的蝕刻處理後,如圖3所示般,由於蝕刻殘渣22會產生於阻擋氧化膜14之表面,因此,去除該蝕刻殘渣22。
此型式之蝕刻殘渣的去除,係一般而言,藉由加熱晶圓的方式來進行。但是,在本例的情況下,發現在二氧化矽系殘渣物20的蝕刻處理後,若直接進行加熱處理時,則如圖4所示般,凹部24主要產生於阻擋氧化膜14之表面。
如此一來,針對凹部24產生於阻擋氧化膜14之表面的原因進行研討,作為結果,假設了以下之機制。
於再成長之二氧化矽系殘渣物20內,係含有作為雜質之鹼成分例如NH3
,在二氧化矽系殘渣物20的蝕刻處理後,其NH3
殘存於阻擋氧化膜14之表面。又,若藉由HF氣體及H2
O氣體或醇類氣體來進行蝕刻處理(COR處理)時,則在阻擋氧化膜14之表面,係殘存有氟成分(F成分)。因此,如圖5所示般,在蝕刻殘渣22,係含有鹼成分及F成分。若於該狀態下進行加熱處理時,則在由SiO2
所構成之阻擋氧化膜14的表面例如發生以下反應,且主要是阻擋氧化膜14被蝕刻。又,因該影響,有時CVD-SiO2
膜10之前端部亦部分被蝕刻。
因此,在本實施形態中,作為使用了HF氣體及H2
O氣體或醇類氣體的COR處理結束後之蝕刻殘渣的除去處理,在進行了供給H2
O氣體或醇類氣體的工程後,進行加熱處理工程。藉此,可抑制阻擋氧化膜14之蝕刻。
參閱圖6及圖7說明關於其機制。 圖6(a)所示般,在由SiO2
所構成之阻擋氧化膜14之表面的Si,係除了OH或H以外,另與F鍵結,若在該狀態下例如供給H2
O時,則如圖6(b)般,F與H2
O產生反應成為HF而揮發,OH則鍵結於F所鍵結之Si的鍵結鍵。藉此,阻擋氧化膜14之表面的蝕刻殘渣22,係如圖7所示般,成為去除了F成分的狀態。由於即便在該狀態下進行加熱處理,F亦從阻擋氧化膜14之表面被去除,因此,可進行殘渣去除而不會產生蝕刻SiO2
的成分,並可防止對阻擋氧化膜14之損傷。又,即便在CVD-SiO2
膜10存在有F成分或鹼成分,亦相同地可防止損傷。另外,即便使用醇代替H2
O,亦可藉由相同的機制來防止阻擋氧化膜14之損傷。
殘渣去除處理之第1工程即供給H2
O氣體或醇類氣體的工程,係藉由「在進行了COR處理的腔室內,停止HF氣體之供給並持續使H2
O氣體或醇類氣體流動」的方式來進行。此時,藉由增加H2
O氣體或醇類氣體之流量的方式,可在短時間內去除阻擋氧化膜14之表面的F。H2
O氣體或醇類氣體之流量,係100~1000sccm的範圍為較佳,處理時間,係30~600sec的範圍為較佳。又,壓力及溫度,係可設成為與COR處理相同的條件。
殘渣除去處理之第2工程即加熱處理工程,係在N2
氣體或Ar氣體等的惰性氣體氛圍下且較佳為150~230℃的範圍下進行。藉此,在第1工程中,係將未被去除之殘渣成分例如如NH3
般的鹼成分等去除,如圖8所示般,可去除蝕刻殘渣22而不會對阻擋氧化膜14造成損傷。此時之第2工程的時間,係30~600sec的範圍為較佳。
實際上,如上述般,在COR處理後進行了2階段之殘渣去除,作為結果確認到,蝕刻殘渣22被去除而不會對SiO2
膜即阻擋氧化膜14或CVD-SiO2
膜10產生損傷。
<使用於本實施形態之蝕刻方法之處理系統的一例> 其次,說明關於使用於本實施形態之蝕刻方法之處理系統的一例。 圖9,係表示使用於本實施形態之蝕刻方法之處理系統之一例的概略構成圖。該處理系統100,係具備有:搬入搬出部102,將如上述般之「去除SiN膜後之在CVD-SiO2
膜10的前端部形成有二氧化矽系殘渣物20」之構造的晶圓W搬入搬出;2個裝載鎖定室103,與搬入搬出部102鄰接設置;熱處理裝置104,分別與各裝載鎖定室103鄰接設置,對晶圓W進行熱處理;COR處理裝置105,分別與各熱處理裝置104鄰接設置,對晶圓W進行蝕刻(COR處理);及控制部106。
搬入搬出部102,係具有:搬送室112,在內部設置有搬送晶圓W的第1晶圓搬送機構111。第1晶圓搬送機構111,係具有:2個搬送臂111a,111b,大致水平地保持晶圓W。在搬送室112之長邊方向的側部,係設置有載置台113,在該載置台113,係可連接例如3個載體C,該載體C,係收容FOUP等的複數片晶圓W。又,與搬送室112鄰接設置有進行晶圓W之對位的對位腔室114。
在搬入搬出部102中,晶圓W,係藉由搬送臂111a,111b所保持,並藉由第1晶圓搬送機構111之驅動,在大致水平面內進行直進移動或升降,藉此,被搬送至所期望的位置。而且,搬送臂111a,111b分別相對於載置台113上之載體C、對位腔室114、裝載鎖定室103進退,藉此,予以搬入搬出。
各裝載鎖定室103,係在閘閥116分別介設於與搬送室112之間的狀態下,被分別連結於搬送室112。在各裝載鎖定室103內,係設置有搬送晶圓W的第2晶圓搬送機構117。又,裝載鎖定室103,係被構成為可抽真空直至預定真空度為止。
第2晶圓搬送機構117,係具有多關節臂構造,且具有大致水平地保持晶圓W的拾取器。在該第2晶圓搬送機構117中,係於縮回了多關節臂的狀態下,使拾取器位於裝載鎖定室103內,藉由伸長多關節臂的方式,使拾取器到達熱處理裝置104,並藉由更伸長的方式,可到達COR處理裝置105,從而可在裝載鎖定室103、熱處理裝置104及COR處理裝置105之間搬送晶圓W。
控制部106,係通常由電腦所構成,具有:主控制部,具有控制處理系統100之各構成部的CPU;輸入裝置(鍵盤、滑鼠等);輸出裝置(印表機等);顯示裝置(顯示器等);及記憶裝置(記憶媒體)。控制部106之主控制部,係例如根據被內建於記憶裝置之記憶媒體或被安裝於記憶裝置之記憶媒體所記憶的處理配方,使處理系統100執行預定動作。
在像這樣的處理系統100中,係將如圖2所示般之「去除SiN膜後之在CVD-SiO2
膜10的前端部形成有二氧化矽系殘渣物20」之構造的複數片晶圓W收納於載體C內,且搬送至處理系統100。在處理系統100中,係於開啟了大氣側之閘閥116的狀態下,藉由第1晶圓搬送機構111之搬送臂111a、111b的任一者,將1片晶圓W從搬入搬出部102之載體C搬送至裝載鎖定室103,並收授至裝載鎖定室103內之第2晶圓搬送機構117的拾取器。
其後,關閉大氣側之閘閥116而對裝載鎖定室103內進行真空排氣,其次,開啟閘閥154,使拾取器伸長至COR處理裝置105,將晶圓W搬送至COR處理裝置105。
其後,使拾取器返回到裝載鎖定室103,關閉閘閥154,在COR處理裝置105中,藉由上述之COR處理來去除二氧化矽系殘渣。在COR處理結束後,藉由COR處理裝置105進行上述之殘渣去除的第1工程。
在殘渣去除之第1工程結束後,開啟閘閥122、154,藉由第2晶圓搬送機構117的拾取器,將蝕刻處理後之晶圓W搬送至熱處理裝置104,並進行殘渣去除之第2工程的加熱處理。
在熱處理裝置104中之加熱處理結束後,藉由第1晶圓搬送機構111之搬送臂111a、111b的任一者,返回到載體C。藉此,一片晶圓之處理完成。
<COR處理裝置> 其次,詳細說明關於被搭載於處理系統100之COR處理裝置105的一例。 圖10,係表示COR處理裝置105之一例的剖面圖。如圖10所示般,COR處理裝置105,係具備有密閉構造的腔室140,在腔室140之內部,係設置有於大致呈水平之狀態下載置晶圓W的載置台142。又,COR處理裝置105,係具備有:氣體供給機構143,將處理氣體供給至腔室140;及排氣機構144,對腔室140內進行排氣。
腔室140,係藉由腔室本體151與蓋部152所構成。腔室本體151,係具有大致圓筒形狀的側壁部151a與底部151b,上部形成為開口,該開口被蓋部152關閉。側壁部151a與蓋部152,係被密封構件(未圖示)密封,以確保腔室140內之氣密性。
蓋部152,係具有:蓋構件155,構成外側;及噴頭156,被設置為嵌入於蓋構件155的內側,並面臨載置台142。噴頭156,係具有:本體157,具有呈圓筒狀的側壁157a與上部壁157b;及噴淋板158,被設置於本體157之底部。在本體157與噴淋板158之間,係形成有空間159。
在蓋構件155及本體157之上部壁157b,係貫通至空間159而形成有氣體導入路徑161,在該氣體導入路徑161,係連接有後述之氣體供給機構143的HF氣體供給配管171。
在噴淋板158,係形成有複數個氣體吐出孔162,經由氣體供給配管171及氣體導入路徑161而導入至空間159的氣體會從氣體吐出孔162被吐出至腔室140內的空間。
在側壁部151a,係設置有在與熱處理裝置104之間搬入搬出晶圓W的搬入搬出口153,該搬入搬出口153,係可藉由閘閥154開關。
載置台142,係以平面觀之呈大致圓形,並被固定於腔室140的底部151b。在載置台142之內部,係設置有調節載置台142之溫度的溫度調節器165。溫度調節器165,係例如具備有溫度調節用媒體(例如水等)所循環的管路,藉由與流通於像這樣的管路內之溫度調節用媒體進行熱交換的方式,調節載置台142之溫度,進行載置台142上之晶圓W的溫度控制。
氣體供給機構143,係具有:HF氣體供給源175,供給HF氣體;H2
O氣體供給源176,供給H2
O氣體;及惰性氣體供給源177,供給N2
氣體或Ar氣體等的惰性氣體,在該些,係分別連接有HF氣體供給配管171、H2
O氣體供給配管172及惰性氣體供給配管173之一端。在HF氣體供給配管171、H2
O氣體供給配管172及惰性氣體供給配管173,係設置有進行流路之開關動作及流量控制的流量控制器179。流量控制器179,係例如藉由開關閥及質流控制器所構成。HF氣體供給配管171之另一端,係如上述般,被連接於氣體導入路徑161。又,H2
O氣體供給配管172及惰性氣體供給配管173之另一端,係被連接於HF氣體供給配管171。
該些氣體,係被供給至噴頭156,並從噴頭156之氣體吐出孔162朝向腔室140內的晶圓W吐出。
另外,如上述般,亦可供給醇類氣體來代替H2
O氣體。又,惰性氣體,係被使用來作為稀釋氣體及沖洗腔室140內的沖洗氣體。在處理之際,係亦可不使用稀釋氣體。
排氣機構144,係具有與被形成於腔室140之底部151b之排氣口181連接的排氣配管182,且更具有被設置於排氣配管182之用以控制腔室140內之壓力的自動壓力控制閥(APC)183及用以對腔室140內進行排氣的真空泵184。
在腔室140之側壁,係以插入至腔室140內的方式,設置有2個電容式壓力計186a,186b,該電容式壓力計,係作為用以計測腔室140內之壓力的壓力計。電容式壓力計186a,係形成為高壓力用,電容式壓力計186b,係形成為低壓力用。在被載置於載置台142之晶圓W的附近,係設置有檢測晶圓W之溫度的溫度感測器(未圖示)。
在像這樣的COR處理裝置105中,係將如上述般之「去除SiN膜後之在CVD-SiO2
膜10的前端部形成有二氧化矽系殘渣物20」之構造的晶圓W搬入至腔室140內,並載置於載置台142。而且,將腔室140內之壓力設成為較佳之133~666Pa(1~5Torr),更佳之266~533Pa(2~4 Torr),並將晶圓W溫度設成為較佳之10~30℃,分別以較佳之500~1500sccm及100~1000sccm的流量供給HF氣體及H2
O氣體,且將稀釋氣體即惰性氣體設成為0~500sccm,蝕刻去除二氧化矽系殘渣物。
在去除二氧化矽系殘渣物後,維持將晶圓W保持於腔室140內之載置台142上,停止HF氣體,並將H2
O氣體設成為100~1000sccm且將稀釋氣體即惰性氣體設成為0~500sccm,在較佳為30~600sec的期間,實施「蝕刻去除二氧化矽系殘渣物後之蝕刻殘渣去除」的第1工程。藉此,去除蝕刻殘渣中之F成分。
<熱處理裝置> 其次,詳細說明關於被搭載於處理系統100之熱處理裝置104的一例。 圖11,係表示熱處理裝置104之一例的剖面圖。如圖11所示般,熱處理裝置104,係具有:腔室120,可進行抽真空;及載置台123,在其中載置晶圓W,在載置台123,係埋設有加熱器124,藉由該加熱器124來加熱被施予蝕刻殘渣去除之第1工程後的晶圓W,使殘存於晶圓W之蝕刻殘渣氣化而去除。
在腔室120之裝載鎖定室103側,係設置有在與裝載鎖定室103之間搬送晶圓的搬入搬出口120a,該搬入搬出口120a,係可藉由閘閥122進行開關。又,在腔室120之COR處理裝置105側,係設置有在與COR處理裝置105之間搬送晶圓W的搬入搬出口120b,該搬入搬出口120b,係可藉由閘閥154進行開關。
在腔室120之側壁上部,係連接有氣體供給路徑125,氣體供給路徑125,係被連接於供給作為惰性氣體之N2
氣體的N2
氣體供給源130。又,在腔室120之底壁,係連接有排氣路徑127,排氣路徑127,係被連接於真空泵133。在氣體供給路徑125,係設置有流量調節閥131,在排氣路徑127,係設置有壓力調整閥132,藉由調整該些閥的方式,使腔室120內成為預定壓力的N2
氣體氛圍而進行熱處理。亦可使用Ar氣體等、N2
氣體以外的惰性氣體。
在像這樣的熱處理裝置104中,係將施予了COR處理裝置105中之蝕刻殘渣去除的第1工程之晶圓W搬入至腔室120內,並載置於載置台123。而且,一面以預定流量供給N2
氣體,一面將腔室120內之壓力設成為較佳之133~666Pa(1~5Torr),藉由加熱器124,將晶圓W溫度設成為較佳之150~230℃,對「施予蝕刻殘渣去除之第1工程後」的晶圓W施予熱處理,使殘存於晶圓W之蝕刻殘渣氣化而去除。
在該情況下,由於是藉由蝕刻殘渣去除之第1工程來去除蝕刻殘渣的F成分,因此,可藉由加熱處理,防止阻擋氧化膜之損傷。
<其他應用> 以上,雖說明了關於本發明之實施形態,但本發明,係不限定於上述實施形態,可在不脫離其要旨的範圍內進行各種變形。
例如,在上述實施形態中,雖係在3D-NAND型非揮發性半導體裝置的製造過程中之將存在於SiN膜去除後之CVD-SiO2
膜的前端部之二氧化矽系殘渣物進行蝕刻去除之際,應用了本發明,但只要是去除被形成於SiO2
膜之含有鹼性成分的二氧化矽系殘渣物的情形則可進行應用,SiO2
膜,係並不限於CVD-SiO2
膜,亦可為熱氧化膜。又,本發明,係不受限於蝕刻之形態,只要是去除附著於CVD所致之SiO2
膜之鹼性成分及F成分之蝕刻殘渣的情形即可進行應用。而且,在本發明中,作為CVD所致之SiO2
膜,係亦含有藉由原子層沈積法(ALD)所形成者。又,在上述實施形態中,雖係將TEOS膜例示為CVD-SiO2
膜,但亦可為使用了其他Si前驅物的SiO2
膜。
又,關於上述處理系統或個別之裝置的構造亦僅為例示,可藉由各種構成之系統或裝置來實現本發明的蝕刻方法。
10‧‧‧CVD-SiO2膜
14‧‧‧阻擋氧化膜(SiO2膜)
18‧‧‧空洞
20‧‧‧二氧化矽系殘渣物
22‧‧‧蝕刻殘渣
100‧‧‧處理系統
104‧‧‧熱處理裝置
105‧‧‧COR處理裝置
W‧‧‧晶圓
[圖1] 表示3D-NAND型非揮發性半導體裝置的製造過程中之去除SiN膜之前的狀態之剖面圖。 [圖2] 示意地表示在從圖1之狀態,藉由濕蝕刻來蝕刻了SiN膜之際,二氧化矽系殘渣物在CVD-SiO2
膜成長之狀態的圖。 [圖3] 示意地表示藉由COR處理蝕刻了被形成於CVD-SiO2
膜之二氧化矽系殘渣物時之存在有蝕刻殘渣之狀態的圖。 [圖4] 表示在藉由加熱處理去除了蝕刻殘渣之際之阻擋氧化之損傷的示意圖。 [圖5] 說明蝕刻殘渣之成分的示意圖。 [圖6] 說明在蝕刻殘渣去除的工程中,藉由H2
O氣體去除鍵結於阻擋氧化膜之表面的F之機制的圖。 [圖7] 表示蝕刻殘渣去除的第1工程中之H2
O氣體處理後之蝕刻殘渣之狀態的示意圖。 [圖8] 表示進行蝕刻殘渣去除之第2工程的加熱處理後之狀態的示意圖。 [圖9] 表示使用於本發明之一實施形態之蝕刻方法之處理系統之一例的概略構成圖。 [圖10] 表示被搭載於圖9之處理系統之COR處理裝置的剖面圖。 [圖11] 表示被搭載於圖9之處理系統之熱處理裝置的剖面圖。
Claims (18)
- 一種蝕刻方法,係蝕刻被形成於SiO2 膜之含有鹼成分的二氧化矽系殘渣物,該蝕刻方法,其特徵係,具有: 第1階段,將HF氣體與H2 O氣體或醇類氣體供給至具有形成了前述二氧化矽系殘渣物之前述SiO2 膜的被處理基板,選擇性地蝕刻二氧化矽系殘渣物;及 第2階段,在前述第1階段後,去除前述第1階段所致之蝕刻殘渣, 前述第2階段,係具有:第1工程,將H2 O氣體或醇類氣體供給至前述被處理基板;及第2工程,加熱前述第1工程後之被處理基板。
- 如申請專利範圍第1項之蝕刻方法,其中, 前述含有鹼成分之二氧化矽系殘渣物,係在藉由熱磷酸之濕蝕刻來去除被形成於前述被處理基板的氮化矽膜之際所形成者。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述SiO2 膜,係藉由CVD所形成之CVD-SiO2 膜。
- 如申請專利範圍第3項之蝕刻方法,其中, 前述被處理基板,係更具有:阻擋SiO2 膜,支撐前述CVD-SiO2 膜,密度比前述CVD-SiO2 膜低且藉由CVD所形成,前述CVD-SiO2 膜,係與前述阻擋SiO2 膜隔開間隔而延伸複數個者。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第1階段,係藉由「將HF氣體與H2 O氣體或醇類氣體供給至配置有前述被處理基板之腔室內」的方式來進行,前述第2階段之前述第1工程,係藉由「在維持將前述被處理基板配置於前述腔室內的狀態下,停止HF氣體並僅將H2 O氣體或醇類氣體供給至前述腔室」的方式來進行。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第1階段,係在壓力為133~666Pa而溫度為0~30℃的條件下進行。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第1階段,係H2 O氣體或醇類氣體相對於HF氣體+H2 O氣體或醇類氣體之合計量的流量比率(體積比率)為10~50%的範圍。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第2階段之前述第1工程,係H2 O氣體或醇類氣體之流量為100~1000sccm的範圍。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第2階段之前述第1工程,係在10~30℃之範圍的溫度下進行。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第2階段之前述第1工程,係時間為5~60sec的範圍。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第2階段之前述第2工程,係在150~230℃之範圍的溫度下進行。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述第2階段之前述第2工程,係時間為30~600sec的範圍。
- 如申請專利範圍第1或2項之蝕刻方法,其中, 前述蝕刻殘渣,係含有氟成分與鹼成分,在前述第2階段之前述第1工程中,去除前述蝕刻殘渣中的前述氟成分,在前述第2階段之前述第2工程,去除前述蝕刻殘渣的剩餘部分。
- 一種殘渣去除方法,係去除附著於SiO2 膜之含有氟成分與鹼成分的蝕刻殘渣,該殘渣去除方法,其特徵係,具有: 第1工程,將H2 O氣體或醇類氣體供給至具有前述SiO2 膜之被處理基板,去除氟成分;及 第2工程,加熱前述第1工程後之被處理基板,去除前述蝕刻殘渣的剩餘部分。
- 如申請專利範圍第14項之殘渣去除方法,其中, 前述第1工程,係在10~30℃之範圍的溫度下進行。
- 如申請專利範圍第14或15項之殘渣去除方法,其中, 前述第1工程,係時間為5~60sec的範圍。
- 如申請專利範圍第14或15項之殘渣去除方法,其中, 前述第2工程,係在150~230℃之範圍的溫度下進行。
- 如申請專利範圍第14或15項之殘渣去除方法,其中, 前述第2工程,係時間為30~600sec的範圍。
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TWI833277B (zh) * | 2021-07-19 | 2024-02-21 | 日商日立全球先端科技股份有限公司 | 半導體製造裝置及半導體製造裝置的清理方法 |
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TWI757516B (zh) | 2022-03-11 |
SG10201805798UA (en) | 2019-02-27 |
KR102181910B1 (ko) | 2020-11-23 |
CN109216186A (zh) | 2019-01-15 |
US20190013207A1 (en) | 2019-01-10 |
CN109216186B (zh) | 2023-08-18 |
US10818506B2 (en) | 2020-10-27 |
JP6796559B2 (ja) | 2020-12-09 |
JP2019016698A (ja) | 2019-01-31 |
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