JP2019016698A - エッチング方法および残渣除去方法 - Google Patents
エッチング方法および残渣除去方法 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 76
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 76
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 115
- 235000012431 wafers Nutrition 0.000 description 50
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 23
- 239000011261 inert gas Substances 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000010790 dilution Methods 0.000 description 4
- 239000012895 dilution Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- -1 ammonium fluorosilicate Chemical compound 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】SiO2膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法は、シリカ系残渣物が形成されたSiO2膜を有する被処理基板にHFガスと、H2Oガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第1段階と、第1段階の後、第1段階によるエッチング残渣を除去する第2段階とを有し、第2段階は、被処理基板にH2Oガスまたはアルコールガスを供給する第1工程と、第1工程後の被処理基板を加熱する第2工程とを有する。
【選択図】図6
Description
最初に、本発明の一実施形態に係るエッチング方法について説明する。
ここでは、3D−NAND型不揮発性半導体装置の製造過程におけるSiN膜除去後の、CVD−SiO2膜の先端部に存在するシリカ系残渣物をエッチング除去する方法について説明する。
SiO2+4HF+4NH3 → SiF4+2H2O+4NH3
図6(a)に示すように、SiO2からなるブロックオキサイド膜14の表面のSiには、OHやH以外に、Fが結合しており、この状態で例えばH2Oを供給すると、図6(b)に示すように、FがH2Oと反応し、HFとなって揮発し、Fが結合していたSiの結合手にはOHが結合する。これにより、ブロックオキサイド膜14の表面のエッチング残渣22は、図7に示すように、F成分が除去された状態となる。この状態で加熱処理を行っても、ブロックオキサイド膜14の表面からFが除去されているので、SiO2をエッチングする成分が発生せずに残渣除去を行うことができ、ブロックオキサイド膜14へのダメージを防止することができる。また、CVD−SiO2膜10にF成分や塩基成分が存在していても、同様に、ダメージを防止することができる。なお、H2Oの代わりにアルコールを用いても同様のメカニズムでブロックオキサイド膜14のダメージを防止することができる。
次に、本実施形態のエッチング方法に用いる処理システムの一例について説明する。
図9は、本実施形態のエッチング方法に用いる処理システムの一例を示す概略構成図である。この処理システム100は、上述したような、SiN膜除去後の、CVD−SiO2膜10の先端部にシリカ系残渣物20が形成された構造のウエハWを搬入出する搬入出部102と、搬入出部102に隣接させて設けられた2つのロードロック室103と、各ロードロック室103にそれぞれ隣接して設けられた、ウエハWに対して熱処理を行なう熱処理装置104と、各熱処理装置104にそれぞれ隣接して設けられた、ウエハWに対してエッチング(COR処理)を行うCOR処理装置105と、制御部106とを備えている。
次に、処理システム100に搭載されたCOR処理装置105の一例について詳細に説明する。
図10はCOR処理装置105の一例を示す断面図である。図10に示すように、COR処理装置105は、密閉構造のチャンバー140を備えており、チャンバー140の内部には、ウエハWを略水平にした状態で載置させる載置台142が設けられている。また、COR処理装置105は、チャンバー140に処理ガスを供給するガス供給機構143、チャンバー140内を排気する排気機構144を備えている。
次に、処理システム100に搭載された熱処理装置104の一例について詳細に説明する。
図11は熱処理装置104の一例を示す断面図である。図11に示すように、熱処理装置104は、真空引き可能なチャンバー120と、その中でウエハWを載置する載置台123を有し、載置台123にはヒーター124が埋設されており、このヒーター124によりエッチング残渣除去の第1工程が施された後のウエハWを加熱してウエハWに残存するエッチング残渣を気化して除去する。
以上、本発明の実施の形態について説明したが、本発明は、上記実施形態に限定されることはなく、その要旨を逸脱しない範囲で種々変形可能である。
14;ブロックオキサイド膜(SiO2膜)
18;空洞
20;シリカ系残渣物
22;エッチング残渣
100;処理システム
104;熱処理装置
105;COR処理装置
W;ウエハ
Claims (18)
- SiO2膜に形成された、塩基成分を含むシリカ系残渣物をエッチングするエッチング方法であって、
前記シリカ系残渣物が形成された前記SiO2膜を有する被処理基板にHFガスと、H2Oガスまたはアルコールガスとを供給してシリカ系残渣物を選択的にエッチングする第1段階と、
前記第1段階の後、前記第1段階によるエッチング残渣を除去する第2段階と
を有し、
前記第2段階は、前記被処理基板にH2Oガスまたはアルコールガスを供給する第1工程と、前記第1工程後の被処理基板を加熱する第2工程と
を有することを特徴とするエッチング方法。 - 前記塩基成分を含むシリカ系残渣物は、前記被処理基板に形成されていた窒化シリコン膜を熱リン酸によるウエットエッチングにより除去する際に形成されたものであることを特徴とする請求項1に記載のエッチング方法。
- 前記SiO2膜は、CVDにより成膜されたCVD−SiO2膜であることを特徴とする請求項1または請求項2に記載のエッチング方法。
- 前記被処理基板は、前記CVD−SiO2膜を支持する、前記CVD−SiO2膜より密度が低くCVDにより形成されたブロックSiO2膜をさらに有し、前記CVD−SiO2膜は、前記ブロックSiO2膜から間隔をあけて複数延びていることを特徴とする請求項3に記載のエッチング方法。
- 前記第1段階は、前記被処理基板が配置されたチャンバー内に、HFガスと、H2Oガスまたはアルコールガスを供給することに行われ、前記第2段階の前記第1工程は、前記被処理基板を前記チャンバー内に配置したままの状態で、HFガスを停止し、H2Oガスまたはアルコールガスのみを前記チャンバーに供給することにより行われることを特徴とする請求項1から請求項4のいずれか1項に記載のエッチング方法。
- 前記第1段階は、圧力が133〜666Pa、温度が0〜30℃の条件で行われることを特徴とする請求項1から請求項5のいずれか1項に記載のエッチング方法。
- 前記第1段階は、HFガス+H2Oガスまたはアルコールガスの合計量に対するH2Oガスまたはアルコールガスの流量比率(体積比率)が10〜50%の範囲であることを特徴とする請求項1から請求項6のいずれか1項に記載のエッチング方法。
- 前記第2段階の前記第1工程は、H2Oガスまたはアルコールガスの流量が100〜1000sccmの範囲であることを特徴とする請求項1から請求項7のいずれか1項に記載のエッチング方法。
- 前記第2段階の前記第1工程は、10〜30℃の範囲の温度で行われることを特徴とする請求項1から請求項8のいずれか1項に記載のエッチング方法。
- 前記第2段階の前記第1工程は、時間が5〜60secの範囲であることを特徴とする請求項1から請求項9のいずれか1項に記載のエッチング方法。
- 前記第2段階の前記第2工程は、150〜230℃の範囲の温度で行われることを特徴とする請求項1から請求項10のいずれか1項に記載のエッチング方法。
- 前記第2段階の前記第2工程は、時間が30〜600secの範囲であることを特徴とする請求項1から請求項11のいずれか1項に記載のエッチング方法。
- 前記エッチング残渣はフッ素成分と塩基成分とを含み、前記第2段階の前記第1工程で前記エッチング残渣のうち前記フッ素成分を除去し、前記第2段階の前記第2工程で前記エッチング残渣の残部を除去することを特徴とする請求項1から請求項12のいずれか1項に記載のエッチング方法。
- SiO2膜に付着したフッ素成分と塩基成分とを含むエッチング残渣を除去するエッチング残渣の除去方法であって、
前記SiO2膜を有する被処理基板にH2Oガスまたはアルコールガスを供給してフッ素成分を除去する第1工程と、
前記第1工程後の被処理基板を加熱して、前記エッチング残渣の残部を除去する第2工程と
を有することを特徴とする残渣除去方法。 - 前記第1工程は、10〜30℃の範囲の温度で行われることを特徴とする請求項14に記載の残渣除去方法。
- 前記第1工程は、時間が5〜60secの範囲であることを特徴とする請求項14または請求項15に記載の残渣除去方法。
- 前記第2工程は、150〜230℃の範囲の温度で行われることを特徴とする請求項14から請求項16のいずれか1項に記載の残渣除去方法。
- 前記第2工程は、時間が30〜600secの範囲であることを特徴とする請求項14から請求項17のいずれか1項に記載の残渣除去方法。
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