TW201826624A - 異向導電性膜及連接構造體 - Google Patents

異向導電性膜及連接構造體 Download PDF

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Publication number
TW201826624A
TW201826624A TW107110076A TW107110076A TW201826624A TW 201826624 A TW201826624 A TW 201826624A TW 107110076 A TW107110076 A TW 107110076A TW 107110076 A TW107110076 A TW 107110076A TW 201826624 A TW201826624 A TW 201826624A
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conductive particles
electronic component
distance
center
conductive
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TW107110076A
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TWI643417B (zh
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篠原誠一郎
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日商迪睿合股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract

異向導電性膜1A、1B含有絕緣接著劑層10、與格子狀地配置於該絕緣接著劑層10之導電粒子P。關於任意之導電粒子P0與鄰接於該導電粒子P0之導電粒子的中心距離，當將與導電粒子P0的最短距離設為第1中心距離d1、將次短之距離設為第2中心距離d2時，該等之中心距離d1、d2分別為導電粒子之粒徑的1.5~5倍，關於由任意之導電粒子P0、距該導電粒子P0第1中心距離的導電粒子P1、距該導電粒子P0第1中心距離d1或第2中心距離的導電粒子P2而形成的銳角三角形，垂直於通過導電粒子P0、P1之第1排列方向L1的直線L0與通過導電粒子P1、P2之第2排列方向L2所形成之銳角的角度α為18~35°。該異向導電性膜1A、1B於COG連接中亦具有穩定的連接可靠性。

Description

異向導電性膜及連接構造體
本發明關於異向導電性膜、使用異向導電性膜之連接方法，及以異向導電性膜連接之連接構造體。
異向導電性膜正被廣泛地使用在將IC晶片等電子零件構裝於基板時。近年，於手機、筆記型電腦等小型電子機器中，正尋求配線之高密度化，作為使異向導電性膜對應於此高密度化之方法，已知下述之技術：於異向導電性膜之絕緣接著劑層將導電粒子均等配置為矩陣(matrix)狀。
但是，即便將導電粒子均等配置，亦會產生連接電阻不均的問題。其原因在於，配置於端子之邊緣上的導電粒子因絕緣性接著劑之熔融而流到空間中，而難以利用上下端子夾持。對於此問題提出如下方法：將導電粒子之第1排列方向設為異向導電性膜之長邊方向，使與第1排列方向交叉之第2排列方向，相對於與異向導電性膜之長邊垂直之方向以5°以上且15°以下之方式傾斜(專利文獻1)。
【專利文獻1】日本專利第4887700號公報
然而，若使利用異向導電性膜連接之電子零件的凸塊尺寸進一步變小，則能以凸塊捕捉到之導電粒子的個數亦變得更少，而專利文獻1所記載之異向導電性膜中，會有無法充分獲得導通可靠度的情況。尤其是，將液晶畫面等控制用IC連接在玻璃基板上之透明電極即所謂之COG連接中，隨著液晶畫面之高精細化，由於多端子化及IC晶片之小型化而凸塊尺寸會變小，使可利用凸塊捕捉到之導電粒子數增加從而提高連接可靠度會成為課題。
故而，本發明之課題在於，即便於COG連接中，亦能使用異向導電性膜來獲得穩定之連接可靠度。
本案發明人發現：於將導電粒子格子狀地配置在絕緣接著劑層上之異向導電性膜中，若使導電粒子之粒子間距離與排列方向具有特定關係，則即便於必須高密度配線之COG連接中，亦能以穩定之連接可靠度進行異向導電性連接，從而完成本發明。
即，本發提供一種異向導電性膜，其含有絕緣接著劑層、與格子狀地配置在該絕緣接著劑層之導電粒子， 關於任意之導電粒子與鄰接於該導電粒子之導電粒子的中心距離，當將與任意導電粒子之最短距離設為第1中心距離，將次短之距離設為第2中心距離時， 第1中心距離及第2中心距離分別為導電粒子之粒徑的1.5~5倍， 關於由任意之導電粒子P0、距任意之導電粒子P0第1中心距離的導電粒子P1、與距任意之導電粒子P0第1中心距離或第2中心距離的導電粒子P2而形成的銳角三角形，垂直於通過導電粒子P0、P1之直線方向(以下，稱為第1排列方向)的直線、與通過導電粒子P1、P2之直線方向(以下，稱為第2排列方向)所形成之銳角的角度α(以下，亦稱為第2排列方向之傾斜角α)為18~35°。
又，本發明提供一種連接方法，其係使用上述之異性導電性膜，來將第1電子零件之連接端子與第2電子零件之連接端子進行異向導電性連接之連接方法，且使異向導電性膜之長邊方向重合於第1電子零件或第2電子零件之連接端子的短邊方向；尤其是，提供一種使與異向導電性膜之第1排列方向略呈垂直之方向重合於第1電子零件或第2電子零件之連接端子的長邊方向之連接方法。
此處，略呈垂直，其不僅是指完全地與第1排列方向垂直之方向，亦包含使用異向導電性膜來構裝電子零件時所產生之偏移的範圍。通常，相對於垂直於第1排列方向之方向，包含±3°。
此外，本發明提供一種利用上述之連接方法來異向導電性連接第1電子零件與第2電子零件的連接構造體。
根據本發明之異向導電性膜，由於其係針對鄰接之導電粒子之中心距離，以最短之中心距離即第1中心距離與次短之中心距離即第2中心距離為導電粒子之粒徑1.5~5倍之方式高密度地配置導電粒子，並且，將導電粒子以特定方向格子狀地配置在絕緣接著劑層，故而，可抑制鄰接之端子間的短路，同時連接高密度之配線。
進而，於本發明之異向導電性膜中，由於垂直於導電粒子之第1排列方向的直線、與第2排列方向所形成之銳角的角度(第2排列方向之傾斜角α)為18~35°，故而，可藉由使與異相導電性膜之第1排列方向略呈垂直之方向重和於連接端子之長邊方向地進行異向導電性連接，來利用連接端子捕捉到之導電粒子個數增加，即便於將本發明之異向導電性膜用在COG連接時，亦可獲得穩定之連接可靠度。
1A、1B‧‧‧異向導電性膜
3‧‧‧連接端子或凸塊
10‧‧‧絕緣接著劑層
L0‧‧‧與第1排列方向垂直之方向
L1‧‧‧第1排列方向
L2‧‧‧第2排列方向
L3‧‧‧第3排列方向
Lf‧‧‧異向導電性膜之長邊方向
Lt‧‧‧連接端子之長邊方向
d1‧‧‧第1中心距離、間距
d2‧‧‧第2中心距離、間距
D‧‧‧導電粒子之粒徑
P、P0、P1、P2、Pc、Pe‧‧‧導電粒子
α‧‧‧傾斜角
β‧‧‧傾斜角
圖1為實施例之異向導電性膜中導電粒子之配置圖。
圖2為異向導電性膜中導電粒子之排列方向與連接端子之長邊方向之較佳排列之說明圖。
圖3為其他實施例之異向導電性膜中導電粒子之排列方向與連接端子之長邊方向之較佳排列之說明圖。
圖4為使用有實施例之異向導電性膜之評價用連接物中導電粒子之配置的說明圖。
圖5為使用有實施例及比較例之異向導電性膜之連接物中每1個凸塊之導電粒子捕捉數與頻率的關係圖。
以下，一邊參照圖式，一邊詳細說明本發明。
圖1為本發明之一實施例之異向導電性膜1A中導電粒子P之配置圖。該異向導電性膜1A具有絕緣接著劑層10、與以配置為格子狀之方式被固定在絕緣接著劑層10之導電粒子P。
該異向導電性膜1A中，關於任意之導電粒子P0與鄰接於該導電粒子P0之導電粒子的中心距離，當將最短之距離設為第1中心距離d1，將次短之距離設為第2中心距離d2時，關於由距導電粒子P0第1中心距離d1的導電粒子P1、與距導電粒子P0第2中心距離的導電粒子P2而形成的銳角三角形P0 P1 P2，於通過導電粒子P0、P1之第1排列方向L1，導電粒子以間距d1排列，並且於通過P1、P2之第2排列方向L2，亦排列導電粒子，於通過導電粒子P0、P2之第3排列方向L3，以間距d2排列導電粒子。此外，在本實施例，使第1排列方向L1中之導電粒子的間距d1大於第3排列方向中之導電粒子的間距d2，但該等間距亦可相同。
導電粒子P之粒徑D，就防止短路與電極間接合之穩定性方 面而言，較佳為1~10μm。
第1中心距離d1及第2中心距離d2分別為導電粒子之粒徑D的1.5~5倍，較佳為1.8~4.5倍，更佳為2~4倍。第1中心距離d1及第2中心距離d2若過短，則於使用異向導電性膜來連接端子間時，會變得容易產生短路，相反地，若過長則端子間所捕捉到之導電粒子數會變得不足。
又，第1中心距離d1及第2中心距離d2的差，較佳為未達導電粒子P之粒徑D的2倍，更佳為未達1.5倍，再更佳為1倍以下。其原因為，若該差過大，則使用異向導電性膜1A的異向導電性連接時，對凸塊之捕捉性會惡化。
導電粒子P之密度較佳為2000~250000個/mm2。該粒子密度藉由導電粒子P之粒徑與配置方向來進行適當調整。
即便欲製造以既定密度格子狀地配置有導電粒子的異向導電性膜，於實際之製法上，亦有自格子位置缺少導電粒子之情況。
關於自導電粒子之自格子位置之缺少，該異向導電性膜1A中，分別針對第1排列方向L1及第2排列方向L2，特別是分別針對各排列方向L1、L2、L3，較佳是將連接之導電粒子P之缺少數量設為6個以下，更佳是設為5個下，再更佳是設為4個以下。
又，自任意之導電粒子的配置位置，於第1排列方向連續地找出10個區域、及於第2排列方向連續地找出10個區域，意即，找出10個×10個(計100個)之配置位置時，100個配置位置中，較佳為存在導電粒子75個以上，更佳為存在80個以上，再更佳為存在90個以上，特佳為存在94個以上。
藉由如此地抑制導電粒子之缺少，於使用異向導電性膜來連接方形之凸塊時，不管使用異向性導電膜之哪一部分，亦可容易地將導通時足夠數量之導電粒子捕捉到凸塊上，可對應於細間距之異向導電性膜之連接。
此外，作為如此地抑制導電粒子缺少的方法，較佳為如下述般於將導電粒子P配置在絕緣接著劑層10時，在具有模具或貫通孔構件上重複地進行擦拭。
又，於該異向導電性膜1A中，第2排列方向之傾斜角α為18~35°。於上述粒徑D與間距d1、d2之關係中，藉由如此地設定第2排列方向之傾斜角α，當利用異向導電性膜1A將矩形之連接端子(凸塊)異向導電性連接時，此異向導電性連接所使用之矩形區域不管是採用異向導電性膜1A之膜面內的何處，皆可將有助於導通之導電粒子確保在足夠之個數。
一般在電子機器之生產線中的異向導電性連接，連接端子3之短邊方向通常是以沿著異向導電性膜1A之長邊方向的方式進行配置。因此，就異向導電性膜之生產性方面而言，較佳為如圖2所示般，使矩形之連接端子3之長邊方向Lt與垂直於第1排列方向L1之方向L0重合(即，使連接端子3之短邊方向與第1排列方向L1重合)。換言之，較理想為使第1排列方向L1略呈平行地形成於異向導電性膜1A之長邊方向Lf，即，在異向導電性膜之製造時所產生之導電粒子之配置偏差的範圍內，與異向導電性膜1A之長邊方向Lf平行地形成導電粒子之第1排列方向L1。
另一方面，異向導電性連接時之連接端子中，就提升導電粒子之捕捉性方面而言，較佳為如圖3所示之異向導電性膜1B般，使導電粒子P之第1排列方向L1、第2排列方向L2、第3排列方向L3均相對於異向導電性膜1B之長邊方向傾斜。特別是，第1排列方向L1與異向導電性膜1B之長邊方向Lf所形成的銳角角度β(以下亦稱為傾斜角β)較佳在5~25°。
此外，該異向導電性膜1B，除了導電粒子P之第1排列方向相對於異向導電性膜1B之長邊方向Lf傾斜以外，與上述異向導電性膜 1A相同地構成。
此處，由於異向導電性膜以可對應於更為細間距之端子連接的方式，使導電粒子配置為緊密之狀態，故亦可如下述之圖4所示般，垂直於異向導電性膜1B之長邊方向Lf的導電粒子P之外切線(2點鏈線)貫穿鄰接於該導電性子P的導電粒子Pc、Pe。藉此，於將異向導電性膜1B重合於連接端子3之端子面的平面圖中，可使連接端子3之連接面所占之導電粒子的面積變得更大。因此，於異向導電性連接時，可防止「被夾持於對向之連接端子3間且押入連接端子3而導通連接端子3之間」的導電粒子P之數量不足。
本發明之異向導電性膜，只要以上述方式進行導電粒子之配置，則導電粒子P本身之構成、亦或者絕緣接著劑10之層構成或構成樹脂，可設為各種態樣。
即，作為導電粒子P，可從周知之異向導電性膜中所用之導電粒子中適當選擇，並加以使用。例如可列舉：鎳、鈷、銀、銅、金、鈀等金屬粒子、被覆金屬之樹脂粒子等。可併用2種以上。
絕緣接著劑層10，可適當採用周知之異向導電性膜中所用之絕緣性樹脂層。例如可使用：含丙烯酸酯化合物與光自由基聚合起始劑之光自由基聚合型樹脂層、含丙烯酸酯化合物與熱自由基聚合起始劑之熱自由基聚合型樹脂層、含環氧化合物與陽離子熱聚合起始劑之陽離子熱聚合型樹脂層、含環氧化合物與陰離子熱聚合起始劑之陰離子熱聚合型樹脂層等。又，視需要可使該等之樹脂層為分別經聚合者。又，亦可自複數之樹脂層形成絕緣接著劑層10。
進而，絕緣接著劑層10亦可視需要添加二氧化矽微粒子、氧化鋁、氫氧化鋁等絕緣性填料。絕緣性填料之摻合量相對於形成絕緣接著劑層之樹脂100質量份，較佳設為3~40質量份。藉此，異向導電性連接 時，即便絕緣接著劑層10熔融，亦可抑制「因熔融之樹脂而使導電粒子2進行不必要地移動」。
作為將導電粒子P以上述之配置固定在絕緣接著劑層10的方法，只要為如下方法即可：利用機械加工、雷射加工、或光蝕刻法(photolithography)等周知之方法，製作具有與導電粒子P之配置對應之凹痕的模具，將導電粒子放入該模具，於其上填入形成絕緣接著劑層用之組成物並進行硬化，然後自模具取出。亦可從此種模具中，進一步利用剛性較低之材質來製作模具。
又，為了按上述之配置將導電粒子P置入絕緣接著劑層10，亦可利用如下方法：於形成絕緣接著劑層之組成物層上，設置以特定之配置形成有貫通孔之構件，自其上供給導電粒子P而使其通過貫通孔等方法。
當使用本發明之異向導電性膜1A、1B，來將撓性基板、玻璃基板等第1電子零件之連接端子、與IC晶片、IC模組等第2電子零件之連接端子進行異向導電性連接時，如圖2、圖3所示般，使異向導電性膜1A、1B的長邊方向Lf與、第1電子零件或第2電子零件之連接端子3的短邊方向重合。藉此，活用本發明之異向導電性膜1A、1B中導電粒子P之配置，可充分地提高連接端子中導電粒子P之捕捉數，特別是，當使用任一之導電粒子P之排列方向均傾斜於異向導電性膜之長邊方向Lf的異向導電性膜1B時，可顯著地提高連接端子3中導電粒子P之捕捉性。
例如，當使用於透明電極形成有連接端子之玻璃基板等來作為第1電子零件，使用IC晶片等來作為第2零件，進行高密度配線之COG連接時，更具體而言，當該等之連接端子之連接面的大小在寬度8~60μm、長度400μm以下(下限為與寬度等倍)時，或是連接端子之連接面的短邊方向寬度為未達導電粒子之粒徑7倍時，與以往之異向導電性連接相比，特別是可使能利用連接端子捕捉之導電粒子數穩定地增加，連接可靠度提 升。再者，連接端子面之短邊方向的寬度若小於上述之寬度，則會時常發生連接不良，若大於上述之寬度，則會變得難以應對COG連接中所需之高密度構裝。又，連接端子面之長度若短於上述之長度，則變得難以取得穩定之導通，若長度長於上述之長度，則會成為部分接觸之主要原因。另一方面，連接端子間之最小距離依連接端子之連接面之短邊方向的寬度而訂定，例如可設在8~30μm。
又，於可利用本發明之異向導電性膜連接之細間距之端子中，在含有相互連接並對向之端子的端子並列方向上，可將設有間隙並鄰接之最小端子間距離(此距離亦可在能異向性連接之範圍內偏離並列方向)設為未達導電粒子之粒徑之4倍。此時，連接之端子的連接面之短邊方向之寬度可設為未達導電粒子之粒徑的7倍。
本發明亦包括以此方式經異向導電性連接之第1電子零件與第2電子零件的連接構造體。
實施例
以下，基於實施例而具體地說明本發明。
試驗例1
關於異向導電性膜中導電粒子P(粒徑D=4μm)之配置，設為第1中心距離d1=第2中心距離d2=10μm，當如表1所示般改變傾斜角α時，藉由將電極尺寸15μm×100μm之狹小凸塊與異向導電性膜之圖案重疊，而求得加熱加壓前之凸塊所能捕捉之導電粒子的最多粒子數與最少粒子數。此時，異向導電性膜之長邊方向與凸塊之短邊方向重合。又，相對於凸塊之邊緣端部而偏離其面積之50%以上之粒子，其無法計算為凸塊所能捕捉之導電粒子。
根據此結果，可觀察傾斜角α與凸塊之粒子捕捉性的傾向。將結果示於表1。
從表1可知，於傾斜角為18~35°時，凸塊所捕捉到之粒子數的最小數量及最大數量之差較少而穩定，對較窄之凸塊有幫助。
相對於此，若傾斜角α過小則捕捉數之差會變大。其原因在於因傾斜角過小，而粒子排列之與凸塊端部配合之情況會直接影響捕捉數。相反地，若傾斜角α過大則亦會產生同樣的現象，會有從凸塊偏離之粒子變多的傾向。
可知：對於如此般狹小之凸塊，當為了穩定地保持導電性而使捕捉效率維持在一定時，需要適當地保持傾斜角α。
實施例1~8、比較例1~5
接著，為了具體地檢測導電粒子之粒子間距離與傾斜角的關係，使用表2所示之樹脂，以下述之方式製造異向導電性膜，該異向導電性膜係使導電粒子(積水化學工業股份有限公司，AUL704，粒徑4μm)成為表2所示之配置者。即，以表2所示之組成調製含熱塑性樹脂、熱固性樹脂及潛在性硬化劑之混合溶液，將其塗布在膜厚50μm之PET膜上，於80℃烘箱進行5分鐘乾燥，而於PET膜上形成厚度20μm之黏著層。
另一方面，以表2所示之配置作成具有凸部排列圖案之金屬模具，使周知之透明性樹脂顆粒(pellet)於熔融的狀態下流入該金屬模具，進行冷卻及固化，藉此形成凹部為表2所示之排列圖案的樹脂模具。於該樹脂模具之凹部填充導電粒子，於其上被覆上述絕緣性樹脂之黏著層，藉由紫外線硬化使該絕緣性樹脂所含之熱硬化性樹脂硬化。接著，將絕緣性樹脂自模具剝離，製成各實施例及比較例的異向導電性膜。
實施例9~13、比較例6、7
除將導電粒子設為表3所示之配置以外，與上述實施例及比較例相同地製造實施例9~13、比較例6、7的異向導電性膜。
此處，比較例7成為四方晶格，實施例3、9~13成為六方晶格之形狀。
再者，比較例1、比較例6中，將導電粒子分散在低沸點溶劑並進行噴霧，而隨機地配置在同一平面上。
使用光學顯微鏡來測量並確認導電粒子之鄰接粒子的中心距離d(第1中心距離d1及第2中心距離d2)。此時，任意地測量50組位於第1排列方向或第2排列方向之100個，求出其平均值，確認其為期望之鄰接粒子之中心距離d。將結果示於表2。
另一方面，比較例1、6為任意地選擇導電粒子100個，並測量各導電粒子之最近之鄰接粒子的中心距離。
評價
以下述方式分別評價各實施例及比較例之異向導電性膜的(a)粒子捕捉數、(b)初期導通電阻、(c)導通可靠度、(d)短路發生率。將結果示於表2、表3。
(a)粒子捕捉數
(a-1)平均數
使用各實施例及比較例之異向導電性膜，將100個15×100μm之凸塊與玻璃基板進行加熱加壓(180℃、80MPa、5秒)而獲得連接物。此時，使異向導電性膜之長邊方向與凸塊之短邊方向重合。接著，測量各凸塊中之粒子捕捉數，求得每1個凸塊之平均粒子捕捉數。
(a-2)最小數量
求得於(a-1)測得之各凸塊粒子捕捉數中之最小數量。
(b)初期導通電阻
將各實施例及比較例之異向導電性膜夾持於初期導通及導通可靠度之評價用IC與玻璃基板之間，進行加熱加壓(180℃、80MPa、5秒)而獲得各評價用連接物。此時，使異向導電性膜之長邊方向與凸塊之短邊方向重合。接著，測定評價用連接物之導通電阻。
此處，該各評價用IC與玻璃基板中，該等之端子圖案為對應，尺寸如下所示。
初期導通及導通可靠度之評價用IC
外徑：0.7×20mm
厚度：0.2mm
凸塊規格：鍍金、高度12μm、尺寸15×100μm、凸塊間距離15μm
玻璃基板
玻璃材質：Corning公司製
外徑：30×50mm
厚度：0.5mm
電極：ITO配線
(c)導通可靠度
針對將(b)之評價用IC與各實施例及比較例之異向導電性膜的評價用連接物置於溫度85℃、濕度85%RH之恆溫槽500小時後之導通電阻，與(b)同樣地進行測量。再者，若該導通電阻為5Ω以上，就連接之電子零件於實用上之導通穩定性方面而言不佳。
(d)短路發生率
準備下述IC(7.5μm間隔之梳齒TEG(test element group))來作為短路發生率之評價用IC。
外徑：1.5×13μm
厚度：0.5mm
凸塊規格：鍍金、高度15μm、尺寸25×140μm、凸塊間距離7.5μm
將各實施例及比較例之異向導電性膜夾持在短路發生率之評價用IC及對應於該評價用IC之圖案的玻璃基板之間，利用與(b)相同之連接條件進行加熱加壓，而獲得連接物，並求出該連接物之短路發生率。短路發生率係利用「短路發生數/7.5μm間隔之總數」而算出者。若短路發生率為1ppm以上，則就製造實用之連接構造體方面而言不佳。
根據表2可知，若導電粒子之傾斜角α在18~35°，則初期導通電阻較低，導通可靠度亦較高，短路發生率亦受到抑制，可進行對應於粒徑4倍左右之端子寬度之高密度配線的異向導電性連接。
相對於此，可知比較例1中，由於粒子密度過高，故絕緣性較差，又，比較例2~比較例5中，傾斜角α偏離18~35°之範圍，凸塊中粒子捕捉數較少，導通可靠度不足。
又，根據表3可知，導電粒子之各排列方向傾向異向導電性膜之長邊方向即實施例9~13亦於導通可靠度優異，並且短路發生率減少。使用該等之實施例9~13之異向導電性膜，並觀察連接有初期導通及導通 可靠度之評價用IC與玻璃基板的評價用連接物，其結果如圖4所示之導電粒子的配置般，凸塊3之長邊方向Lt的導電粒子P之外切線(2點鏈線)、及鄰接於該導電粒子P之導電粒子Pc、Pe會重疊，並且該外切線會貫穿導電粒子Pc、Pe。藉此，可確認到：即便使凸塊3之寬度更窄，亦可捕捉到對導通而言為足夠數量之導電粒子。
又，若比較使用有比較例7與實施例9~13之異向導電性膜的評價用連接物之外觀，則使用有實施例9~13之異向導電性膜的評價用連接物中，位於凸塊3之寬度方向之中央部的導電粒子Pc、與位於凸塊3之邊緣上的導電粒子Pe之壓痕狀態的差異，會少於使用有比較例7之異向導電性膜的評價用連接物。藉此，可知當使用實施例之異向導電性膜，則可實現更為均一之壓接。再者，因凸塊面積較窄，故並非一定要在1個凸塊3中在邊緣上與寬度方向之中央部兩處捕捉導電粒子，因此，藉由觀察多數並列之凸塊之任一者中，在邊緣捕捉之導電粒子與在寬度方向之中央部捕捉之導電粒子，而獲得上述之結果。
實施例14~19
將實施例3、9~13中導電粒子之粒徑D從4μm變為3μm，將鄰接粒子間之中心距離設為6μm(即，(d-D)/D=1)，配置密度設為28000個/mm2，以製造實施例14~19之異向導電性膜，並同樣地進行評價。結果該等均可獲得與實施例3及9~13大致相同之低初期導通電阻、高導通可靠度及抑制短路發生率之效果。又，該等之評價用連接物中位於凸塊邊緣上之導電粒子與位於寬度方向之中央部之導電粒子的壓痕狀態，亦與實施例9~13相同。
進而，關於在實施例14與比較粒1製成之粒子個數密度為60000個/mm2之異向導電性膜，使用具凸塊面積700μm2(凸塊尺寸14μm×50μm、凸塊間距離14μm)之凸塊的IC，與測量實施例1之粒子捕捉 數之情況相同地進行連接，調查1個凸塊所捕捉之導電粒子的頻率。將結果示於圖5。
根據圖5可知，實施例14中每1個凸塊之導電粒子捕捉數相對於比較例1，在9個附近會急遽地增加出現頻率，每1個凸塊之導電粒子捕捉數穩定。
實施例20~25
製造將實施例3、9~13中導電粒子之粒徑D維持4μm，並將鄰接粒子間之中心距離設為7μm((d-D)/D=0.75、配置密度20000個/mm2)的實施例20~25之異向導電性膜，同樣地進行評價。結果該等均可獲得與實施例3、9~13大致相同之低初期導通電阻、高導通可靠度及抑制短路發生率之效果。又，該等之評價用連接物中位於凸塊邊緣上之導電粒子與位於寬度方向之中央部之導電粒子的壓痕狀態，亦與實施例9~13相同。
實施例26~31
製造將實施例3、9~13中導電粒子之粒徑D維持4μm，並將鄰接粒子間之中心距離設為16μm((d-D)/D=3、配置密度4000個/mm2)的實施例26~31之異向導電性膜，同樣地進行評價。結果該等之初期導通電阻變得高於實施例3、9~13，但並無實用上之問題。導通可靠度之高低與抑制短路發生率之效果與實施例3、9~13相同。認為其原因在於，實施例26~31之異向導電性膜的導電粒子之配置密度較低。評價用連接物中位於凸塊邊緣上之導電粒子與位於寬度方向之中央部之導電粒子的壓痕狀態，與實施例9~13相同。
實施例32~33
於實施例5、7中，在絕緣性樹脂100質量份添加二氧化矽微粒子填料(二氧化矽微粒子、Aerosil RY200、日本Aerosil股份有限公司)20質量份，與實施例5、7相同地製造異向導電性膜，並進行評價。結果可獲得與實施 例5、7相同之低初期導通電阻、高導通可靠度與抑制短路發生率之效果。

Claims (18)

  1. 一種異向導電性膜，其含有絕緣接著劑層、與格子狀地配置在該絕緣接著劑層之導電粒子，關於任意之導電粒子與鄰接於該導電粒子之導電粒子的中心距離，當將與任意導電粒子之最短距離設為第1中心距離，將次短之距離設為第2中心距離時，第1中心距離及第2中心距離分別為導電粒子之粒徑的1.5~5倍；關於由任意之導電粒子P 0、距任意之導電粒子P 0第1中心距離的導電粒子P 1、與距任意之導電粒子P 0第1中心距離或第2中心距離的導電粒子P 2而形成的銳角三角形，垂直於通過導電粒子P 0、P 1之直線方向(以下，稱為第1排列方向)的直線、與通過導電粒子P 1、P 2之直線方向(以下，稱為第2排列方向)所形成之銳角的角度α為18~35°；當將通過導電粒子P 0、P 2之直線方向設為第3排列方向時，第1排列方向、第2排列方向及第3排列方向相對於異向導電性膜之長邊方向傾斜；第1排列方向與膜長邊方向所形成之角度小於第2排列方向與膜長邊方向所形成之角度。
  2. 如申請專利範圍第1項之異向導電性膜，其中，第1中心距離與第2中心距離之差為未達導電粒子之粒徑的2倍。
  3. 如申請專利範圍第1或2項之異向導電性膜，其中，第1排列方向與異向導電性膜之長邊方向所形成之角度β為5~25°。
  4. 如申請專利範圍第1或2項之異向導電性膜，其中，導電粒子之密度為2000~250000個/mm 2。
  5. 如申請專利範圍第1或2項之異向導電性膜，其中，分別關於第1排列方向及第2排列方向，連接之導電粒子的缺少數量為6個以下。
  6. 一種異向導電性膜，其含有絕緣接著劑層、與格子狀地配置在該絕緣接著劑層之導電粒子，關於任意之導電粒子與鄰接於該導電粒子之導電粒子的中心距離，當將與任意導電粒子之最短距離設為第1中心距離，將次短之距離設為第2中心距離時，第1中心距離及第2中心距離分別為導電粒子之粒徑的1.5~5倍；關於由任意之導電粒子P 0、距任意之導電粒子P 0第1中心距離的導電粒子P 1、與距任意之導電粒子P 0第1中心距離或第2中心距離的導電粒子P 2而形成的銳角三角形，垂直於通過導電粒子P 0、P 1之直線方向(以下，稱為第1排列方向)的直線、與通過導電粒子P 1、P 2之直線方向(以下，稱為第2排列方向)所形成之銳角的角度α為18~35°；當將通過導電粒子P 0、P 2之直線方向設為第3排列方向時，第1排列方向、第2排列方向及第3排列方向相對於異向導電性膜之長邊方向傾斜；第1排列方向與異向導電性膜之長邊方向所形成之角度β為5~25°。
  7. 如申請專利範圍第6項之異向導電性膜，其中，第1中心距離與第2中心距離之差為未達導電粒子之粒徑的2倍。
  8. 如申請專利範圍第6或7項之異向導電性膜，其中，導電粒子之密度為2000~250000個/mm 2。
  9. 如申請專利範圍第6或7項之異向導電性膜，其中，分別關於第1排列方向及第2排列方向，連接之導電粒子的缺少數量為6個以下。
  10. 一種連接方法，係使用申請專利範圍第1至9項中任一項之異向導電性膜，來將第1電子零件之連接端子與第2電子零件之連接端子進行異向導電性連接者，並且使異向導電性膜之長邊方向重合於第1電子 零件或第2電子零件之連接端子的短邊方向，使與異向導電性膜之第1排列方向略呈垂直之方向重合於第1電子零件或第2電子零件之連接端子的長邊方向。
  11. 如申請專利範圍第10項之連接方法，其中，第1電子零件為於透明電極形成有連接端子之玻璃基板，第2電子零件為IC晶片。
  12. 如申請專利範圍第10或11項之連接方法，其中，連接端子之連接面大小為寬度8~60μm、長度400μm以下。
  13. 一種連接構造體，係介隔申請專利範圍第1至9項中任一項之異向導電性膜來將第1電子零件之連接端子與第2電子零件之連接端子加以異向導電性連接者，並且，異向導電性膜之長邊方向重合於第1電子零件或第2電子零件之連接端子的短邊方向。
  14. 一種異向導電性膜，其含有絕緣接著劑層、與格子狀地配置在該絕緣接著劑層之導電粒子，關於任意之導電粒子與鄰接於該導電粒子之導電粒子的中心距離，當將與任意導電粒子之最短距離設為第1中心距離，將次短之距離設為第2中心距離時，第1中心距離及第2中心距離分別為導電粒子之粒徑的1.5~5倍；關於由任意之導電粒子P 0、距任意之導電粒子P 0第1中心距離的導電粒子P 1、與距任意之導電粒子P 0第1中心距離或第2中心距離的導電粒子P 2而形成的銳角三角形，垂直於通過導電粒子P 0、P 1之直線方向(以下，稱為第1排列方向)的直線、與通過導電粒子P 1、P 2之直線方向(以下，稱為第2排列方向)所形成之銳角的角度α為18~35°；與異向導電性膜之長邊方向垂直之方向的導電粒子P之外切線，其貫穿與該導電粒子P鄰接之導電粒子。
  15. 一種連接方法，係使用申請專利範圍第14項之異向導電性膜，來將第1電子零件之連接端子與第2電子零件之連接端子進行異向導電性連接者，並且使異向導電性膜之長邊方向重合於第1電子零件或第2電子零件之連接端子的短邊方向，使與異向導電性膜之第1排列方向略呈垂直之方向重合於第1電子零件或第2電子零件之連接端子的長邊方向。
  16. 如申請專利範圍第15項之連接方法，其中，第1電子零件為於透明電極形成有連接端子之玻璃基板，第2電子零件為IC晶片。
  17. 如申請專利範圍第15或16項之連接方法，其中，連接端子之連接面大小為寬度8~60μm、長度400μm以下。
  18. 一種連接構造體，係介隔申請專利範圍第14項之異向導電性膜來將第1電子零件之連接端子與第2電子零件之連接端子加以異向導電性連接者，並且，異向導電性膜之長邊方向重合於第1電子零件或第2電子零件之連接端子的短邊方向。
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