TW201714016A - 波長轉換構件及發光裝置 - Google Patents
波長轉換構件及發光裝置 Download PDFInfo
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Abstract
本發明提供一種減少螢光體層與基板之界面上產生之應力應變而於使用時不易破損的波長轉換構件。一種波長轉換構件1,其係由基板10與無機螢光體粉末22分散於玻璃基質21中而成之螢光體層20接合而形成。該波長轉換構件1之特徵在於,於30℃~螢光體層20之固著點之溫度範圍,將基板10之熱膨脹係數設為α1
並將螢光體層20之熱膨脹係數設為α2
之情形時,滿足-10×10-7
≦α1
-α2
≦10×10-7
(/℃)之關係。其中,固著點=Tf-(Tf-Tg)/3(Tg:玻璃轉移點、Tf:降伏點)
Description
本發明係關於一種作為投影儀用螢光輪等較佳之波長轉換構件及使用其之發光裝置。
近年來,為使投影儀小型化,提出一種使用LED(Light Emitting Diode,發光二極體)等光源、及包含螢光體層之波長轉換構件之發光裝置。例如,提出有一種所謂反射型之螢光輪,該螢光輪於螢光體層對光源之光進行波長轉換,並將所獲得之螢光藉由與波長轉換構件鄰接設置之反射基板朝光源之入射側反射而提取至外部(例如,參照專利文獻1)。反射型之螢光輪具有朝外部之螢光提取效率較高、且容易使投影儀高亮度化之優點。螢光體層因來自光源之光之照射而伴隨發熱,故而要求耐熱性。因此,提出一種包含將無機螢光體粉末分散於耐熱性較高之玻璃基質中而成之螢光體層的波長轉換構件。然而,於該情形時,有因螢光體層與反射基板之熱膨脹係數差而導致在兩者之界面產生應力應變之情形。例如,於使用金屬基板作為反射基板之情形時,與螢光體層之熱膨脹係數差較大,因此,應力應變變大。其結果,有產生因使用過程中受到之振動等而於螢光體層產生龜裂或者螢光體層自反射基板剝離之不良情況之虞。為減輕上述問題,考慮使反射基板與螢光體層之熱膨脹係數差減小之方法。例如,於先前文獻2中,揭示有一種波長轉換構件(投影儀用螢光輪),其係將反射基板設為陶瓷基板與金屬反射層之2層構造,且於陶瓷基板側之表面設置有螢光體層。陶瓷基板與金屬材料相比熱膨脹係數較低,因此,可減小與螢光體層之熱膨脹係數差。[先前技術文獻][專利文獻][專利文獻1]日本專利特開2015-1709號公報[專利文獻2]國際公開第2015/068562號公報
[發明所欲解決之問題]存在如下情形,即,即便使反射基板與螢光體層之熱膨脹係數差減小,於兩者之界面產生之應力應變亦不充分變小。因此,本發明之技術課題在於提供一種減少基板與螢光體層之界面上產生之應力應變而於使用時不易破損的波長轉換構件。[解決問題之技術手段]本發明之波長轉換構件之特徵在於其係由基板與無機螢光體粉末分散於玻璃基質中而成之螢光體層接合而形成者,且於30℃~上述螢光體層之固著點之溫度範圍,將基板之熱膨脹係數設為α1
並將螢光體層之熱膨脹係數設為α2
之情形時,滿足-10×10-7
≦α1
-α2
≦10×10-7
(/℃)之關係。此處,固著點係指由Tf-(Tf-Tg)/3(Tg:玻璃轉移點、Tf:降伏點)所表示之溫度。本發明者等進行了研究,結果可知,波長轉換構件之基板與螢光體層之界面上產生之應力應變係因其製造步驟而引起。具體而言,如下說明。於基板上形成螢光體層而成之波長轉換構件係藉由將包含例如玻璃粉末及無機螢光體粉末之坯片貼附於基板上並進行焙燒而製作。具體而言,若對坯片進行焙燒,則形成包含玻璃粉末及無機螢光體粉末之燒結體之螢光體層。螢光體層以其固著點固著於基板,其後,冷卻至常溫附近,藉此獲得於基板上形成螢光體層而成之波長轉換構件。此處,於30℃~螢光體層之固著點之溫度範圍,若基板之熱膨脹係數與螢光體層之熱膨脹係數之差較大,則於螢光體層固著於基板之後,於降溫過程中容易於兩者之界面產生殘留應力。因此,於30℃~螢光體層之固著點之溫度範圍,如上述般規定基板之熱膨脹係數與螢光體層之熱膨脹係數之差,藉此可抑制上述不良情況之產生。本發明之波長轉換構件較佳為基板包含氧化物陶瓷或玻璃。本發明之波長轉換構件較佳為氧化物陶瓷為多晶氧化鋁或單晶藍寶石。本發明之波長轉換構件較佳為螢光體層熔合於基板。根據該構成,不使用耐熱性較低之樹脂接著劑等便可將螢光體層與基板接合,因此,可獲得耐熱性優異之波長轉換構件。具體而言,樹脂接著劑因激發光之照射熱而劣化並黑化,因此,發光強度容易隨時間降低,但根據上述構成,不易產生此種問題。又,樹脂接著劑之導熱性較低,因此,將螢光體層與基板利用樹脂接著劑接著之情形時,於螢光體層產生之熱難以朝基板側散熱。另一方面,若螢光體層熔合於基板,則於螢光體層產生之熱易於效率良好地朝基板側散熱。本發明之波長轉換構件較佳為螢光體層之厚度為30~300 μm。本發明之波長轉換構件較佳為無機螢光體粉末包含選自氮化物螢光體、氮氧化物螢光體、氧化物螢光體、硫化物螢光體、氧硫化物螢光體、鹵化物螢光體及鋁酸鹽螢光體之1種以上。本發明之波長轉換構件較佳為螢光體層中之無機螢光體粉末之含量為30~80體積%。本發明之波長轉換構件較佳為輪形狀。根據該構成,容易藉由旋轉而散熱,從而可減少伴隨螢光體層升溫而產生之破損或溫度淬滅。由此,用於高亮度之投影儀光源而特佳。本發明之發光裝置之特徵在於具備上述波長轉換構件、及對波長轉換構件中之螢光體層照射激發光之光源。本發明之發光裝置作為投影儀光源而較佳。本發明之波長轉換構件之製造方法之特徵在於包含如下步驟:製作包含玻璃粉末與無機螢光體粉末之坯片;及藉由將坯片貼附於基板上並進行焙燒而形成螢光體層;此處,於30℃~上述螢光體層之固著點之溫度範圍,將基板之熱膨脹係數設為α1
並將螢光體層之熱膨脹係數設為α2
之情形時,滿足-10×10-7
≦α1
-α2
≦10×10-7
(/℃)之關係。此處,固著點與上述同樣地,係指由Tf-(Tf-Tg)/3(Tg:玻璃轉移點、Tf:降伏點)所表示之溫度。[發明之效果]根據本發明,可提供一種減少螢光體層與基板之界面上產生之應力應變而於使用時不易破損的波長轉換構件。
以下,對本發明之較佳之實施形態進行說明。但是,下述實施形態僅為例示,本發明不受下述實施形態任何限定。(波長轉換構件1)圖1係表示本發明之一實施形態之波長轉換構件之概略剖視圖。如圖1所示,波長轉換構件1具備基板10、及接合於其表面之螢光體層20。螢光體層20係將無機螢光體粉末22分散於玻璃基質21中而成。螢光體層20較佳為熔合於基板10。作為無機接合層,可列舉玻璃層。具體而言,可列舉包含與玻璃基質21相同組成之玻璃層。波長轉換構件1之形狀尺寸可根據使用波長轉換構件1之裝置之形狀尺寸等而適當設定。作為波長轉換構件1之形狀,可列舉例如矩形板狀、圓盤狀、及輪形狀。尤其是用於投影儀用光源之情形時,較佳為輪形狀。再者,可於基板10之表面(至少一主面)之整面形成螢光體層20,亦可僅於基板10之表面之一部分形成螢光體層10。(基板10)作為基板10,可列舉包含氧化物陶瓷或玻璃者。作為氧化物陶瓷,可列舉多晶氧化鋁、單晶藍寶石等。多晶氧化鋁亦可為多孔質體。多晶氧化鋁用作反射基板。另一方面,單晶藍寶石由於為透光性,故而可用作透射型波長轉換構件。(螢光體層20)螢光體層20包含玻璃基質21與無機螢光體粉末22。例如,螢光體層20係將無機螢光體粉末22分散於包含玻璃粉末燒結體之玻璃基質21中而成。如此一來,容易獲得於玻璃基質21中均勻地分散有無機螢光體粉末22之螢光體層20。作為玻璃基質21之組成,較佳為例如含有60~90質量%之SiO2
、B2
O3
之任1種以上。具體而言,可列舉SiO2
-B2
O3
-RO(R為Mg、Ca、Sr或Ba)系玻璃、SiO2
-B2
O3
-R'2
O(R'為Li、Na或Ka)系玻璃、及SiO2
-B2
O3
-RO-R'2
O系玻璃等。於本實施形態中,於30℃~螢光體層20之固著點之溫度範圍,將基板10之熱膨脹係數設為α1
並將螢光體層20之熱膨脹係數設為α2
之情形時,滿足-10×10-7
≦α1
-α2
≦10×10-7
(/℃)之關係。若α1
-α2
過小,則根據已述之理由,基板10與螢光體層20之界面上產生之應力應變(自基板10對螢光體20之拉伸應力)變大,從而有於使用時破損之虞。另一方面,於α1
-α2
過大之情形時,基板10與螢光體層20之界面上產生之應力應變(自基板10對螢光體20之壓縮應力)亦變大,而螢光體層20容易自基板10剝離。α1
-α2
較佳為-8×10-7
以上,特佳為-6×10-7
以上(/℃),且較佳為8×10-7
以下,特佳為6×10-7
以下(/℃)。作為無機螢光體粉末22,只要為一般地市場上可獲得者則並無特別限定。可列舉例如包含氮化物螢光體粉末、氮氧化物螢光體粉末、氧化物螢光體粉末(包含YAG(Yttrium Aluminum Garnet,釔鋁石榴石)螢光體粉末等石榴石系螢光體粉末)、硫化物螢光體粉末、氧硫化物螢光體粉末、鹵化物螢光體粉末(鹵磷醯氯粉末等)及鋁酸鹽螢光體粉末等者。其中,氮化物螢光體粉末、氮氧化物螢光體粉末及氧化物螢光體粉末由於耐熱性較高而於焙燒時相對不易劣化,故而較佳。再者,氮化物螢光體粉末及氮氧化物螢光體粉末具有如下特徵:將近紫外~藍色之激發光轉換為綠色~紅色之範圍較廣之波長區域,而且發光強度亦相對較高。因此,氮化物螢光體粉末及氮氧化物螢光體粉末作為用於白色LED元件用波長轉換構件之無機螢光體粉末22尤其有效。作為無機螢光體粉末22,可列舉於波長300~500 nm具有激發帶且於波長380~780 nm具有發光峰值者、尤其是發出藍色(波長440~480 nm)、綠色(波長500~540 nm)、黃色(波長540~595 nm)或紅色(波長600~700 nm)之光者。作為照射波長300~440 nm之紫外~近紫外之激發光時發出藍色之發光之無機螢光體粉末,可列舉(Sr,Ba)MgAl10
O17
:Eu2+
、(Sr,Ba)3
MgSi2
O8
:Eu2+
等。作為照射波長300~440 nm之紫外~近紫外之激發光時發出綠色之螢光之無機螢光體粉末,可列舉SrAl2
O4
:Eu2+
、SrBaSiO4
:Eu2+
、Y3
(Al,Gd)5
O12
:Ce2+
、SrSiOn
:Eu2+
、BaMgAl10
O17
:Eu2+
,Mn2+
、Ba2
MgSi2
O7
:Eu2+
、Ba2
SiO4
:Eu2+
、Ba2
Li2
Si2
O7
:Eu2+
、BaAl2
O4
:Eu2+
等。作為照射波長440~480 nm之藍色之激發光時發出綠色之螢光之無機螢光體粉末,可列舉SrAl2
O4
:Eu2+
、SrBaSiO4
:Eu2+
、Y3
(Al,Gd)5
O12
:Ce3+
、SrSiOn
:Eu2+
、β-SiAlON:Eu2+
等。作為照射波長300~440 nm之紫外~近紫外之激發光時發出黃色之螢光之無機螢光體粉末,可列舉La3
Si6
N11
:Ce3+
等。作為照射波長440~480 nm之藍色之激發光時發出黃色之螢光之無機螢光體粉末,可列舉Y3
(Al,Gd)5
O12
:Ce3+
、Sr2
SiO4
:Eu2+
。作為照射波長300~440 nm之紫外~近紫外之激發光時發出紅色之螢光之無機螢光體粉末,可列舉CaGa2
S4
:Mn2+
、MgSr3
Si2
O8
:Eu2+
,Mn2+
、Ca2
MgSi2
O7
:Eu2+
,Mn2+
等。作為照射波長440~480 nm之藍色之激發光時發出紅色之螢光之無機螢光體粉末,可列舉CaAlSiN3
:Eu2+
、CaSiN3
:Eu2+
、(Ca,Sr)2
Si5
N8
:Eu2+
、α-SiAlON:Eu2+
等。再者,亦可配合激發光或發光之波長區域而混合使用複數種無機螢光體粉末。例如,於照射紫外線區域之激發光而獲得白色光之情形時,將發出藍色、綠色、黃色、紅色之螢光之無機螢光體粉末混合使用即可。若螢光體層20中之無機螢光體粉末22之含量過多,則燒結性降低而螢光體層20之機械強度容易降低。另一方面,若無機螢光體粉末22之含量過少,則難以獲得所期望之發光強度。根據此種觀點,螢光體層20中之無機螢光體粉末22之含量較佳為以體積%計為20~90%、30~80%,特佳為40~75%。若無機螢光體粉末22之平均粒徑過大,則有發光色變得不均均之情形。因此,無機螢光體粉末22之平均粒徑較佳為50 μm以下,特佳為25 μm以下。但是,若無機螢光體粉末22之平均粒徑過小,則有發光強度降低之情形。因此,無機螢光體粉末22之平均粒徑較佳為1 μm以上,特佳為5 μm以上。螢光體層20之厚度較佳為30~300 μm,特佳為50~200 μm。若螢光體層20之厚度過小,則無法獲得所期望之發光強度。另一方面,若螢光體層20之厚度過大,則來自螢光體層20之光之提取效率較差,從而有發光強度降低之傾向。再者,螢光體層20之厚度越大,則螢光體層20與基板10之界面應力越容易變大,因此,容易享受本發明之效果。(波長轉換構件1之製造方法)其次,對波長轉換構件1之製造方法之一例進行說明。首先,使用包含用以構成玻璃基質21之玻璃粉末與無機螢光體粉末22之混合粉末而製作坯片。具體而言,藉由對混合粉末添加適量之有機溶劑或樹脂黏合劑等並進行混煉而獲得漿料之後,於PET(polyethylene terephthalate,聚對苯二甲酸乙二酯)等樹脂膜上進行片材成形,藉此製作坯片。玻璃粉末之粒徑較佳為,最大粒徑(Dmax)為200 μm以下(尤其是150 μm以下、進而105 μm以下),且平均粒徑(D50)為0.1 μm以上(尤其是1 μm以上、進而2 μm以上)。若玻璃粉末之最大粒徑過大,則於螢光體層20中激發光難以散射而發光效率容易降低。又,若平均粒徑過小,則於螢光體層20中,激發光過度地散射而發光效率反而容易降低。再者,於本發明中,最大粒徑及平均粒徑係指利用雷射繞射法測定之值。其次,將坯片與基板10積層,並視需要加壓,藉此製作積層體。藉由對積層體進行焙燒而獲得波長轉換構件1。再者,基板10與玻璃粉末選擇各自之熱膨脹係數為已述之關係之材料。為獲得緻密之燒結體,焙燒溫度較佳為玻璃粉末之軟化點以上。另一方面,若焙燒溫度過高,則有無機螢光體粉末於玻璃粉末中溶出而導致發光強度降低之虞。因此,焙燒溫度較佳為玻璃粉末之軟化點+150℃以下,特佳為玻璃粉末之軟化點+100℃以下。(發光裝置2)圖2係表示使用波長轉換構件1之發光裝置2之一實施形態之示意性側視圖。發光裝置2包含波長轉換構件1與光源30。光源30對波長轉換構件1照射激發光L1。若激發光L1入射至波長轉換構件1中之螢光體層20,則波長轉換為螢光L2。螢光L2藉由作為反射基板之基板10進行反射並朝向光源30側出射。螢光L2藉由配置於光源30與波長轉換構件1之間之分光鏡40而分離,並被提取至外部。[實施例]以下,根據具體之實施例對本發明詳細地進行說明,但本發明不受以下之實施例任何限定,可於不變更其主旨之範圍內適當變更而實施。表1表示實施例1~3及比較例1、2。[表1]
(1)波長轉換構件之製作以成為表1所記載之玻璃組成之方式調製原料,並利用熔融急冷法呈膜狀成形玻璃。使用球磨機將所獲得之玻璃膜濕式粉碎,獲得平均粒徑為2 μm之玻璃粉末。將所獲得之玻璃粉末與YAG螢光體粉末(Yttrium Aluminum Garnet:Y3
Al5
O12
、平均粒徑15 μm)以就體積比而言成為玻璃粉末:螢光體粉末=30:70之方式使用振動混合機進行混合。對所獲得之混合粉末50 g添加適量之結合劑、塑化劑、溶劑等,並混練24小時,藉此獲得漿料。使用刮刀法(刀片間隙200 μm)將該漿料塗佈於PET膜上並使其乾燥,藉此製作坯片。所獲得之坯片之厚度為120 μm。將切斷為相同尺寸之上述坯片貼附於多晶氧化鋁基板(MARUWA製造 HA-96-2、180 mm×15 mm、厚度0.25 mm)之表面,並使用熱壓接機以100℃施加10 kPa之壓力3分鐘,藉此製作積層體。將積層體於大氣中以600℃進行1小時脫脂處理之後,以表1所記載之焙燒溫度焙燒30分鐘,藉此製作波長轉換構件。所獲得之波長轉換構件中之螢光體層之厚度為100 μm。螢光體層之固著點、及30℃~固著點之溫度範圍內之熱膨脹係數以如下方式測定。對上述所獲得之玻璃粉末與YAG螢光體粉末之混合粉末使用模具以50 MPa加壓,藉此製作壓粉體。利用電爐將壓粉體以表1所記載之焙燒溫度焙燒60分鐘,藉此獲得緻密之燒結體。將所獲得之燒結體加工成特定形狀,根據使用TMA(thermomechanical Analysis,熱機械分析)裝置(RIGAKU製造 Thermo Plus TMA8310)所獲得之熱膨脹曲線而求出玻璃轉移點Tg及降伏點Tf,並根據固著點=Tf-(Tf-Tg)/3之式而計算出固著點。熱膨脹曲線於升溫過程中變化為具有急遽之梯度之直線。將該彎曲點設為玻璃轉移點Tg。若進一步進行升溫,則燒結體因軟化而於表觀上停止伸長並檢測出收縮。將該反曲點設為降伏點Tf。又,根據熱膨脹曲線而計算出30℃~上述螢光體層之固著點之溫度範圍內之熱膨脹係數。對於多晶氧化鋁基板,亦根據使用TMA裝置所獲得之熱膨脹曲線而計算出30℃~螢光體層之固著點之溫度範圍內之熱膨脹係數。(2)特性評價針對上述所製作之波長轉換構件,確認到基板與螢光體層之界面上之殘存應力。再者,基板及螢光體層均為不透明體,無法利用偏光顯微鏡等觀察光學應變,因此,測定波長轉換構件之翹曲量而作為殘存應力之指標。具體而言,於將波長轉換構件之長度方向之端部壓抵於壓盤上時,測定相反側之端部與壓盤之距離,並作為翹曲量而進行評估。再者,表中將以螢光體層側凹陷之方式翹曲之情形記載為正,將以基板側凹陷之方式翹曲之情形記載為負。如根據表1而明確般,可知實施例1~3之波長轉換構件與比較例1、2之波長轉換構件相比,翹曲量之絕對值較小,而基板與螢光體層之界面上之殘存應力較小。
1‧‧‧波長轉換構件
2‧‧‧發光裝置
10‧‧‧基板
20‧‧‧螢光體層
21‧‧‧玻璃基質
22‧‧‧無機螢光體粉末
30‧‧‧光源
40‧‧‧分光鏡
L1‧‧‧激發光
L2‧‧‧螢光
圖1係本發明之一實施形態之波長轉換構件之示意性剖視圖。圖2係使用本發明之一實施形態之波長轉換構件之發光裝置之示意性側視圖。
1‧‧‧波長轉換構件
10‧‧‧基板
20‧‧‧螢光體層
21‧‧‧玻璃基質
22‧‧‧無機螢光體粉末
Claims (11)
- 一種波長轉換構件,其特徵在於其係由基板與無機螢光體粉末分散於玻璃基質中而成之螢光體層接合而形成者,且於30℃~上述螢光體層之固著點之溫度範圍,將上述基板之熱膨脹係數設為α1 並將上述螢光體層之熱膨脹係數設為α2 之情形時,滿足-10×10-7 ≦α1 -α2 ≦10×10-7 (/℃)之關係,其中,固著點=Tf-(Tf-Tg)/3(Tg:玻璃轉移點、Tf:降伏點)。
- 如請求項1之波長轉換構件,其中上述基板包含氧化物陶瓷或玻璃。
- 如請求項2之波長轉換構件,其中上述氧化物陶瓷係多晶氧化鋁或單晶藍寶石。
- 如請求項1至3中任一項之波長轉換構件,其中上述螢光體層熔合於上述基板。
- 如請求項1至4中任一項之波長轉換構件,其中上述螢光體層之厚度為30~300 μm。
- 如請求項1至5中任一項之波長轉換構件,其中上述無機螢光體粉末包含選自氮化物螢光體粉末、氮氧化物螢光體粉末、氧化物螢光體粉末、硫化物螢光體粉末、氧硫化物螢光體粉末、鹵化物螢光體粉末及鋁酸鹽螢光體粉末之1種以上。
- 如請求項1至6中任一項之波長轉換構件,其中上述螢光體層中之上述無機螢光體粉末之含量為30~80體積%。
- 如請求項1至7中任一項之波長轉換構件,其為輪形狀。
- 一種發光裝置,其特徵在於具備如請求項1至8中任一項之波長轉換構件、及對上述波長轉換構件中之上述螢光體層照射激發光之光源。
- 如請求項9之發光裝置,其用作投影儀光源。
- 一種波長轉換構件之製造方法,其特徵在於包含如下步驟:製作包含玻璃粉末與無機螢光體粉末之坯片;及藉由將上述坯片貼附於基板上並進行焙燒而形成螢光體層;且於30℃~上述螢光體層之固著點之溫度範圍,將上述基板之熱膨脹係數設為α1 並將上述螢光體層之熱膨脹係數設為α2 之情形時,滿足-10×10-7 ≦α1 -α2 ≦10×10-7 (/℃)之關係,其中,固著點=Tf-(Tf-Tg)/3(Tg:玻璃轉移點、Tf:降伏點)。
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