TW201614846A - Source/drain contacts for non-planar transistors - Google Patents
Source/drain contacts for non-planar transistorsInfo
- Publication number
- TW201614846A TW201614846A TW104131438A TW104131438A TW201614846A TW 201614846 A TW201614846 A TW 201614846A TW 104131438 A TW104131438 A TW 104131438A TW 104131438 A TW104131438 A TW 104131438A TW 201614846 A TW201614846 A TW 201614846A
- Authority
- TW
- Taiwan
- Prior art keywords
- source
- planar transistors
- drain contacts
- titanium
- drain
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910021341 titanium silicide Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2011/054479 WO2013048524A1 (en) | 2011-10-01 | 2011-10-01 | Source/drain contacts for non-planar transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201614846A true TW201614846A (en) | 2016-04-16 |
TWI595662B TWI595662B (zh) | 2017-08-11 |
Family
ID=47996256
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106117658A TWI661561B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點(三) |
TW101135607A TWI512987B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點 |
TW108108918A TWI701767B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點(四) |
TW104131438A TWI595662B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點(二) |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106117658A TWI661561B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點(三) |
TW101135607A TWI512987B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點 |
TW108108918A TWI701767B (zh) | 2011-10-01 | 2012-09-27 | 用於非平面電晶體之源極/汲極接點(四) |
Country Status (5)
Country | Link |
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US (7) | US8981435B2 (zh) |
CN (1) | CN103918083A (zh) |
DE (1) | DE112011105702T5 (zh) |
TW (4) | TWI661561B (zh) |
WO (1) | WO2013048524A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3174106A1 (en) | 2011-09-30 | 2017-05-31 | Intel Corporation | Tungsten gates for non-planar transistors |
CN107039527A (zh) | 2011-09-30 | 2017-08-11 | 英特尔公司 | 用于晶体管栅极的帽盖介电结构 |
US9637810B2 (en) | 2011-09-30 | 2017-05-02 | Intel Corporation | Tungsten gates for non-planar transistors |
DE112011105702T5 (de) | 2011-10-01 | 2014-07-17 | Intel Corporation | Source-/Drain-Kontakte für nicht planare Transistoren |
DE112011105925B4 (de) | 2011-12-06 | 2023-02-09 | Tahoe Research, Ltd. | Mikroelektronischer Transistor und Verfahren zum Herstellen desselben |
US9034703B2 (en) * | 2012-09-13 | 2015-05-19 | International Business Machines Corporation | Self aligned contact with improved robustness |
US9153483B2 (en) * | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
US9659827B2 (en) * | 2014-07-21 | 2017-05-23 | Samsung Electronics Co., Ltd. | Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation |
KR102310076B1 (ko) | 2015-04-23 | 2021-10-08 | 삼성전자주식회사 | 비대칭 소스/드레인 포함하는 반도체 소자 |
KR102432280B1 (ko) * | 2015-07-31 | 2022-08-12 | 삼성전자주식회사 | 반도체 소자 |
US9564363B1 (en) * | 2015-08-19 | 2017-02-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming butted contact |
US10510851B2 (en) * | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low resistance contact method and structure |
US10084065B1 (en) | 2017-03-13 | 2018-09-25 | International Business Machines Corporation | Reducing resistance of bottom source/drain in vertical channel devices |
US10804148B2 (en) * | 2017-08-25 | 2020-10-13 | International Business Machines Corporation | Buried contact to provide reduced VFET feature-to-feature tolerance requirements |
JP2019050255A (ja) | 2017-09-08 | 2019-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10347720B2 (en) | 2017-10-30 | 2019-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Doping for semiconductor device with conductive feature |
US10559686B2 (en) * | 2018-06-26 | 2020-02-11 | Globalfoundries Inc. | Methods of forming gate contact over active region for vertical FinFET, and structures formed thereby |
US11450673B2 (en) * | 2020-07-31 | 2022-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Connection between source/drain and gate |
Family Cites Families (113)
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2011
- 2011-10-01 DE DE112011105702.4T patent/DE112011105702T5/de not_active Ceased
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- 2011-10-01 CN CN201180074516.5A patent/CN103918083A/zh active Pending
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2012
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US9853156B2 (en) | 2017-12-26 |
US20130256767A1 (en) | 2013-10-03 |
TW201739054A (zh) | 2017-11-01 |
TWI512987B (zh) | 2015-12-11 |
US20170323966A1 (en) | 2017-11-09 |
CN103918083A (zh) | 2014-07-09 |
TWI701767B (zh) | 2020-08-11 |
TW201929147A (zh) | 2019-07-16 |
DE112011105702T5 (de) | 2014-07-17 |
US10283640B2 (en) | 2019-05-07 |
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