TW201607662A - Ｉｉｉ族氮化物基板之製造方法 - Google Patents

Ｉｉｉ族氮化物基板之製造方法 Download PDF

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Publication number
TW201607662A
TW201607662A TW104116799A TW104116799A TW201607662A TW 201607662 A TW201607662 A TW 201607662A TW 104116799 A TW104116799 A TW 104116799A TW 104116799 A TW104116799 A TW 104116799A TW 201607662 A TW201607662 A TW 201607662A
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TW
Taiwan
Prior art keywords
substrate
seed crystal
iii nitride
group iii
substrates
Prior art date
Application number
TW104116799A
Other languages
English (en)
Chinese (zh)
Inventor
吉田丈洋
Original Assignee
賽奧科思股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 賽奧科思股份有限公司 filed Critical 賽奧科思股份有限公司
Publication of TW201607662A publication Critical patent/TW201607662A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Chemical Vapour Deposition (AREA)
TW104116799A 2014-05-26 2015-05-26 Ｉｉｉ族氮化物基板之製造方法 TW201607662A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014108255A JP6129784B2 (ja) 2014-05-26 2014-05-26 Ｉｉｉ族窒化物基板の製造方法

Publications (1)

Publication Number Publication Date
TW201607662A true TW201607662A (zh) 2016-03-01

Family

ID=54698852

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104116799A TW201607662A (zh) 2014-05-26 2015-05-26 Ｉｉｉ族氮化物基板之製造方法

Country Status (4)

Country Link
US (1) US10053796B2 (https=)
JP (1) JP6129784B2 (https=)
TW (1) TW201607662A (https=)
WO (1) WO2015182520A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107338477A (zh) * 2016-05-02 2017-11-10 国立大学法人大阪大学 氮化物结晶基板的制造方法以及结晶生长用基板

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JP6466195B2 (ja) * 2015-02-17 2019-02-06 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体基板の製造方法
US10364510B2 (en) 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
US10584031B2 (en) 2016-03-08 2020-03-10 Sciocs Company Limited Nitride crystal substrate
DE102016117912A1 (de) * 2016-09-22 2018-03-22 Nexwafe Gmbh Verfahren zum Anordnen mehrerer Saatsubstrate an einem Trägerelement und Trägerelement mit Saatsubstraten
JP6735647B2 (ja) * 2016-09-29 2020-08-05 株式会社サイオクス 窒化物結晶基板の製造方法
JP6901844B2 (ja) * 2016-12-02 2021-07-14 株式会社サイオクス 窒化物結晶基板の製造方法および結晶成長用基板
JP6827330B2 (ja) * 2017-01-20 2021-02-10 株式会社サイオクス Ｉｉｉ族窒化物基板の製造方法
JP6781054B2 (ja) * 2017-01-20 2020-11-04 株式会社サイオクス 窒化物結晶基板および窒化物結晶基板の製造方法
JP7046496B2 (ja) * 2017-03-28 2022-04-04 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法、ｉｉｉ族窒化物半導体基板、及び、バルク結晶
CN116997691A (zh) * 2021-03-09 2023-11-03 松下知识产权经营株式会社 Iii族氮化物晶体、iii族氮化物半导体、iii族氮化物衬底、和iii族氮化物晶体的制造方法
CN113634900A (zh) * 2021-07-21 2021-11-12 上海理工大学 一种使用增材制造技术制备镍基合金定向双晶的方法
JP2023181727A (ja) * 2022-06-13 2023-12-25 株式会社ディスコ ウェーハの製造方法
DE102024126609A1 (de) * 2024-09-16 2026-03-19 Ams-Osram International Gmbh Verfahren zur herstellung eines saphirwafers, verfahren zur herstellung von halbleiterbauelementen, saphirwafer und halbleiterbauelement

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JPH0967199A (ja) 1995-08-30 1997-03-11 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体単結晶バルクの作製方法
JP4061700B2 (ja) 1998-03-19 2008-03-19 株式会社デンソー 単結晶の製造方法
JP4117156B2 (ja) 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
FR2852974A1 (fr) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator Procede de fabrication de cristaux monocristallins
JP4915128B2 (ja) * 2005-04-11 2012-04-11 日亜化学工業株式会社 窒化物半導体ウエハ及びその製造方法
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
JP2008133151A (ja) 2006-11-28 2008-06-12 Sumitomo Electric Ind Ltd 結晶成長方法、結晶基板、および半導体デバイス
JP4844470B2 (ja) * 2007-05-09 2011-12-28 パナソニック株式会社 種結晶の固定方法
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5447289B2 (ja) * 2009-08-19 2014-03-19 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5757068B2 (ja) * 2010-08-02 2015-07-29 住友電気工業株式会社 ＧａＮ結晶の成長方法
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JP5732288B2 (ja) * 2011-03-18 2015-06-10 学校法人 名城大学 自立基板の製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107338477A (zh) * 2016-05-02 2017-11-10 国立大学法人大阪大学 氮化物结晶基板的制造方法以及结晶生长用基板
CN107338477B (zh) * 2016-05-02 2021-12-07 国立大学法人大阪大学 氮化物结晶基板的制造方法以及结晶生长用基板

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Publication number Publication date
JP6129784B2 (ja) 2017-05-17
US20170247813A1 (en) 2017-08-31
WO2015182520A1 (ja) 2015-12-03
US10053796B2 (en) 2018-08-21
JP2015224143A (ja) 2015-12-14

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