TW201502208A - 半導體裝置及半導體元件密封用硬化性聚矽氧組合物 - Google Patents
半導體裝置及半導體元件密封用硬化性聚矽氧組合物 Download PDFInfo
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Abstract
本發明之課題在於提供一種半導體裝置,其係利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而形成,且吸濕回焊試驗後之可靠性優異。
本發明之半導體裝置係一種利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而成者,且上述聚矽氧硬化物為至少包含(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物、及(D)矽氫化反應用鉑系觸媒之矽氫化反應硬化性聚矽氧組合物之硬化物。
Description
本發明係關於一種用以密封半導體裝置及該半導體裝置中之半導體元件之硬化性聚矽氧組合物。
關於LED(Light-emitting Diode,發光二極體)等光半導體裝置,為了防止導線或基板之腐蝕,使發光二極體(LED)元件發出之光效率較佳地反射,使用鍍銀之導線或基板,但有銀由於硫化氫等含硫氣體而黑色化之問題。因此,正在研究反射率較銀差,但無含硫氣體所引起之黑色化問題之經鍍金之導線或基板的使用。
另一方面,矽氫化反應硬化性聚矽氧組合物藉由加熱而快速地硬化,硬化時不產生副產物,故作為半導體元件之密封劑或接著劑而利用,但矽氫化反應硬化性聚矽氧組合物缺乏接著性,故而,例如於日本專利特開2007-134372號公報中,提出於利用矽氫化反應硬化性聚矽氧組合物將搭載於經鍍金之基板上之半導體元件密封時,事先利用含酸酐基烷氧基矽烷或其部分水解縮合物對上述基板進行處理。
然而,關於根據日本專利特開2007-134372號公報提出之方法,有如下不便:必須事先利用含酸酐基烷氧基矽烷或其部分水解縮合物對經鍍金之基板進行處理。
此處,於日本專利特開2011-063663號公報中,提出包含具有鍵結矽原子之羥基之支鏈狀有機聚矽氧烷、無機填充劑、縮合觸媒,具有直鏈狀二有機聚矽氧烷殘基之有機聚矽氧烷、及3-巰丙基三甲氧基矽烷等矽烷偶合劑之底填充材料組合物,提出對回焊時之翹曲之行為無影響,耐熱性、耐光性、對金凸塊之接著性優異。然而,該組合物為底填充材料用途,又,由於縮合反應而發生硬化,故而有由於反應,而產生副產物之問題。另一方面,關於矽氫化反應硬化性聚矽氧組合物,3-巰丙基三甲氧基矽烷等鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物易於產生硬化阻礙,故而並未研究將上述有機矽化合物用作接著促進劑。
[專利文獻1]日本專利特開2007-134372號公報
[專利文獻2]日本專利特開2011-063663號公報
本發明之目的在於提供一種半導體裝置,其係利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而成,且吸濕回焊試驗後之可靠性優異。又,本發明之另一目的在於提供一種硬化性聚矽氧組合物,其用於密封對經鍍金之導線或基板之接著性良好之上述導線或基板及半導體元件。
本發明之半導體裝置之特徵在於:其係利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而成者,且上述聚矽氧硬化物為至少包含(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於
(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)之矽氫化反應硬化性聚矽氧組合物之硬化物。
關於上述半導體裝置,較佳為聚矽氧硬化物之JIS K 6253所規定之A型硬度計硬度為10~99。
又,關於上述半導體裝置,較佳為半導體元件為發光二極體(LED)元件。
又,本發明之半導體元件密封用硬化性聚矽氧組合物之特徵在於:其係用於密封半導體裝置中之經鍍金之導線或基板及半導體元件之矽氫化反應硬化性聚矽氧組合物,且其至少包含(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)。
本發明之半導體裝置之特徵在於:吸濕回焊試驗後之可靠性優異。又,本發明之半導體元件密封用硬化性聚矽氧組合物之特徵在於:對經鍍金之導線或基板之接著性良好。
1‧‧‧聚鄰苯二甲醯胺(PPA)樹脂製殼體
2‧‧‧經鍍金之導線
3‧‧‧晶片座
4‧‧‧接著材料
5‧‧‧發光二極體(LED)元件
6‧‧‧金製接合線
7‧‧‧包含聚矽氧硬化物之密封材料
圖1係作為本發明之半導體裝置之一例的光半導體裝置(LED)之剖面圖。
首先,就本發明之半導體裝置詳細地進行說明。
本發明之半導體裝置為利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而成者。作為該半導體元件,例示有發光二極體(LED)元件、半導體雷射元件、光電二極體元件、光電晶體元件、固體拍攝元件、光電耦合器用發光元件及受光元件,尤佳為發光二極體(LED)元件。
藉由圖1詳細地說明本發明之半導體裝置。
圖1為作為半導體裝置之一例之光半導體裝置(LED)之剖面圖。該光半導體裝置(LED)中,發光二極體(LED)元件5藉由接著材料4黏晶於聚鄰苯二甲醯胺(PPA)樹脂製殼體1內之晶片座3上,發光二極體(LED)元件5及經鍍金之導線2藉由金製接合線6而打線結合,發光二極體(LED)元件5、經鍍金之導線2及金製接合線6藉由包含聚矽氧硬化物之密封材料7而密封。
本發明之半導體裝置中,將經鍍金之導線或基板及半導體元件密封而成之聚矽氧硬化物之特徵在於:其係至少包含如下者之矽氫化反應硬化性聚矽氧組合物之硬化物:(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子,且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物,為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)。
(A)成分為上述組合物之主劑,係於一分子中至少具有2個烯基之有機聚矽氧烷。作為(A)成分中之烯基,例示有:乙烯基、烯丙基、
丁烯基、戊烯基、己烯基、庚烯基、辛烯基、壬烯基、癸烯基、十一碳烯基、十二碳烯基等碳數為2~12個之烯基,較佳為乙烯基。又,作為(A)成分中之烯基以外之鍵結於矽原子之基,例示有:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基等碳數為1~12個之烷基;苯基、甲苯基、二甲苯基、萘基等碳數為6~20個之芳基;苄基、苯乙基、苯丙基等碳數為7~20個之芳烷基;使該等基之氫原子之一部分或全部經氟原子、氯原子、溴原子等鹵素原子取代之基。再者,於(A)成分中之矽原子中,於無損本發明之目的之範圍內,亦可具有少量羥基或甲氧基、乙氧基等烷氧基。
(A)成分之分子結構並無特別限定,例如,可列舉直鏈狀、具有一部分支鏈之直鏈狀、支鏈狀、環狀、或立體網狀結構。(A)成分可為具有該等分子結構之單獨有機聚矽氧烷,或者亦可為具有該等分子結構之兩種以上之有機聚矽氧烷之混合物。
關於此種(A)成分,較佳為相對於鍵結矽原子之全部有機基,烯基為0.01~50莫耳%,進而較佳為0.05~40莫耳%,尤佳為0.09~32莫耳%。其原因在於:若(A)成分中之烯基過少,則有無法獲得硬化物之虞,又,若(A)成分中之烯基過多,則有所獲得之硬化物之機械特性變差之虞。又,較佳為(A)成分中之烯基位於有機聚矽氧烷分子之兩末端。再者,(A)成分中之總一價烴基中之烯基之莫耳%例如可藉由傅立葉變換紅外分光光度計(FT-IR)、核磁共振(NMR)、凝膠滲透層析法(GPC)等分析而測定。
(A)成分係於25℃下為液狀或固體狀之有機聚矽氧烷。於(A)成分於25℃下為液狀之情形時,其25℃下之黏度較佳為在1~1,000,000mPa‧s之範圍內,更佳為在10~1,000,000mPa‧s之範圍內。再者,有機聚矽氧烷之25℃下之黏度例如可藉由按照JIS K7117-1使用B型黏
度計測定而求出。
(B)成分為上述組合物之交聯劑,係於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷。作為(B)成分中之氫原子以外之鍵結於矽原子之基,例示有:甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、環己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基等碳數為1~12個之烷基;苯基、甲苯基、二甲苯基、萘基等碳數為6~20個之芳基;苄基、苯乙基、苯丙基等碳數為7~20個之芳烷基;使該等基之氫原子之一部分或全部經氟原子、氯原子、溴原子等鹵素原子取代之基。再者,於(B)成分中之矽原子中,於無損本發明之目的之範圍內,亦可具有少量羥基或甲氧基、乙氧基等烷氧基。
(B)成分之分子結構並無特別限定,例如,可列舉直鏈狀、具有一部分支鏈之直鏈狀、支鏈狀、環狀、或立體網狀結構,較佳可列舉具有一部分支鏈之直鏈狀、支鏈狀、或立體網狀結構。
(B)成分於25℃下為固體狀或液狀。於(B)成分於25℃下為液狀之情形時,其25℃下之黏度較佳為10,000mPa‧s以下,更佳為在0.1~5,000mPa‧s之範圍內,尤佳為在0.5~1,000mPa‧s之範圍內。再者,有機聚矽氧烷之25℃下之黏度例如可藉由按照JIS K7117-1使用B型黏度計測定而求出。
(B)成分只要可達成本發明之目的,則並不特別限定於特定之有機聚矽氧烷,例如,可列舉:選自由1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、三(二甲基氫矽烷氧基)甲基矽烷、三(二甲基氫矽烷氧基)苯基矽烷、1-縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1,5-二縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1-縮水甘油氧基丙基-5-三甲氧基矽烷基乙基-1,3,5,7-四甲基環四矽氧烷、分子鏈兩封端之三甲基矽烷氧基封阻甲基氫聚矽氧烷、分子鏈兩封端之
三甲基矽烷氧基封阻二甲基矽氧烷-甲基氫矽氧烷共聚物、分子鏈兩封端之二甲基氫矽烷氧基封阻二甲基聚矽氧烷、分子鏈兩封端之二甲基氫矽烷氧基封阻二甲基矽氧烷-甲基氫矽氧烷共聚物、分子鏈兩封端之三甲基矽烷氧基封阻甲基氫矽氧烷-二苯基矽氧烷共聚物、分子鏈兩封端之三甲基矽烷氧基封阻甲基氫矽氧烷-二苯基矽氧烷-二甲基矽氧烷共聚物、包含(CH3)2HSiO1/2單元及SiO4/2單元之共聚物、及包含(CH3)2HSiO1/2單元、SiO4/2單元及(C6H5)SiO3/2單元之共聚物等所組成之群中之1種或2種以上。
關於(B)成分之含量,為相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量,較佳為成為0.5~5莫耳之量。其原因在於:若(B)成分之含量為上述範圍之上限以下,則可抑制所獲得之硬化物之機械特性之降低,另一方面,若為上述範圍之下限以上,則所獲得之組合物充分地硬化。再者,(B)成分中之鍵結矽原子之氫原子之量例如可藉由傅立葉變換紅外分光光度計(FT-IR)、核磁共振(NMR)、凝膠滲透層析法(GPC)等分析而測定。
(C)成分之有機矽化合物為鍵結硫原子且具有鍵結矽原子之水解性基者,係對上述組合物賦予與經鍍金之導線框架之良好接著性之成分。作為此種(C)成分,例示有:3-巰丙基三甲氧基矽烷、3-巰丙基三乙氧基矽烷、3-巰丙基甲基二甲氧基矽烷、3-巰丙基甲基二乙氧基矽烷等巰基烷基烷氧基矽烷;雙(三甲氧基矽烷基丙基)二硫化物、雙(三甲氧基矽烷基丙基)三硫化物、雙(三甲氧基矽烷基丙基)四硫化物等雙(烷氧基矽烷基烷基)硫化物。
(C)成分之含量相對於上述組合物為0.0001~2質量%,較佳為成為0.001~1質量%,尤佳為成為0.01~0.2質量%之量。其原因在於:若為上述範圍之下限以上,則對經鍍金之導線或基板之接著性提高,另一方面,若為上述範圍之上限以下,則不產生上述組合物之硬化阻
礙。
(D)成分為用以促進上述組合物之矽氫化反應之矽氫化反應用鉑系觸媒。作為此種(D)成分,例示有:鉑微粉末、鉑黑、氯鉑酸、氯鉑酸之醇改性物、氯鉑酸與二烯烴之錯合物、鉑-烯烴錯合物、雙(乙醯乙酸)鉑、雙(乙醯丙酮)鉑等鉑-羰基錯合物、氯鉑酸-二乙烯基四甲基二矽氧烷錯合物、氯鉑酸-四乙烯基四甲基環四矽氧烷錯合物等氯鉑酸-烯基矽氧烷錯合物、鉑-二乙烯基四甲基二矽氧烷錯合物、鉑-四乙烯基四甲基環四矽氧烷錯合物等鉑-烯基矽氧烷錯合物、及氯鉑酸與乙炔醇類之錯合物,就矽氫化反應之促進效果較高而言,尤佳為鉑-烯基矽氧烷錯合物。該等矽氫化反應用鉑系觸媒可單獨使用一種,亦可併用兩種以上。
用於鉑-烯基矽氧烷錯合物之烯基矽氧烷並無特別限定,例如,可列舉:1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、使該等烯基矽氧烷之甲基之一部分經乙基、苯基等取代之烯基矽氧烷低聚物、及使該等烯基矽氧烷之乙烯基經烯丙基、己烯基等取代之烯基矽氧烷低聚物等。就生成之鉑-烯基矽氧烷錯合物之穩定性良好而言,尤佳為1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷。
又,為了提高鉑-烯基矽氧烷錯合物之穩定性,較佳為將該等鉑-烯基矽氧烷錯合物溶解於1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷、1,3-二烯丙基-1,1,3,3-四甲基二矽氧烷、1,3-二乙烯基-1,3-二甲基-1,3-二苯基二矽氧烷、1,3-二乙烯基-1,1,3,3-四苯基二矽氧烷、及1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷等烯基矽氧烷低聚物或二甲基矽氧烷低聚物等有機矽氧烷低聚物中,尤佳為溶解於烯基矽氧烷低聚物中。
(D)成分之含量為相對於上述組合物,(D)成分中之鉑原子成為
0.01~500質量ppm之量,較佳為成為0.01~100質量ppm之範圍內之量,尤佳為成為0.1~50質量ppm之範圍內之量。其原因在於:若(D)成分之含量為上述範圍之下限以上,則所獲得之組合物充分地硬化,另一方面,若為上述範圍之上限以下,則可抑制所獲得之硬化物之著色。
於上述組合物中,亦可含有(E)矽氫化反應抑制劑作為用以延長常溫下之使用壽命,提高保存穩定性之任意成分。作為此種(E)成分,例示有:1-乙炔基環己烷-1-醇、2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇、及2-苯基-3-丁炔-2-醇等炔醇;3-甲基-3-戊烯-1-炔、及3,5-二甲基-3-己烯-1-炔等烯炔化合物;1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、及1,3,5,7-四甲基-1,3,5,7-四己烯基環四矽氧烷等甲基烯基矽氧烷低聚物;二甲基雙(3-甲基-1-丁炔-3-氧基)矽烷、及甲基乙烯基雙(3-甲基-1-丁炔-3-氧基)矽烷等炔氧基矽烷、以及異氰尿酸三烯丙酯系化合物。
(E)成分之含量並無特別限定,係為了上述(A)成分~(D)成分之混合時抑制凝膠化,或抑制硬化之充分之量,進而,係為了可長期保存之充分之量。作為(E)成分之含量,具體而言,相對於上述(A)成分~(D)成分之合計100質量份,較佳為0.0001~5質量份之範圍內,更佳為0.01~3質量份之範圍內。
又,於上述組合物中,為了進一步提高對硬化中接觸之基材之接著性,亦可含有接著促進劑。作為該接著促進劑,較佳為於一分子中具有1個或2個以上鍵結於矽原子之烷氧基之有機矽化合物。作為該烷氧基,例示有:甲氧基、乙氧基、丙氧基、丁氧基、及甲氧基乙氧基等,尤佳為甲氧基或乙氧基。又,作為鍵結於該有機矽化合物之矽原子的烷氧基以外之基,例示有:烷基、烯基、芳基、芳烷基、及鹵化烷基等經取代或未經取代之一價烴基;3-縮水甘油氧基丙基、及4-
縮水甘油氧基丁基等縮水甘油氧基烷基;2-(3,4-環氧環己基)乙基、及3-(3,4-環氧環己基)丙基等環氧環己基烷基;4-環氧乙烷基丁基、及8-環氧乙烷基辛基等環氧乙烷基烷基等含環氧基一價有機基;3-甲基丙烯醯氧丙基等含丙烯基一價有機基;異氰酸酯基;異氰尿酸酯基;以及氫原子。該有機矽化合物較佳為具有可與本組合物中之脂肪族不飽和烴基或鍵結矽原子之氫原子反應之基,具體而言,較佳為具有鍵結矽原子之脂肪族不飽和烴基或鍵結矽原子之氫原子。
接著促進劑之含量並無限定,相對於上述(A)成分~(D)成分之合計100質量份,較佳為0.01~10質量份之範圍內,更佳為0.1~3質量份之範圍內。
又,於上述組合物中可含有螢光體作為其他任意成分。作為該螢光體,例如,可列舉廣泛利用於發光二極體(LED)之包含氧化物系螢光體、氮氧化物系螢光體、氮化物系螢光體、硫化物系螢光體、氧硫化物系螢光體等之黃色、紅色、綠色、藍色發光螢光體。作為氧化物系螢光體,例示有:包含鈰離子之釔、鋁、石榴石系之YAG系綠色~黃色發光螢光體,包含鈰離子之鋱、鋁、石榴石系之TAG系黃色發光螢光體,及包含鈰或銪離子之矽酸鹽系綠色~黃色發光螢光體。作為氮氧化物系螢光體,例示有:包含銪離子之矽、鋁、氧、氮系之賽隆系紅色~綠色發光螢光體。作為氮化物系螢光體,例示有:包含銪離子之鈣、鍶、鋁、矽、氮系之CASN系紅色發光螢光體。作為硫化物系螢光體,例示有:包含銅離子或鋁離子之ZnS系綠色顯色螢光體。作為氧硫化物系螢光體,例示有:包含銪離子之Y2O2S系紅色發光螢光體。該等螢光體可使用1種,或者,亦可使用2種以上之混合物。
該螢光體之含量並無特別限定,於上述組合物中為0.1~70質量%之範圍內,進而較佳為1~20質量%之範圍內。
又,於上述組合物中,只要無損本發明之目的,亦可含有選自二氧化矽、玻璃及氧化鋁等之1種或2種以上之無機質填充劑;聚矽氧橡膠粉末;聚矽氧樹脂、及聚甲基丙烯酸酯樹脂等樹脂粉末;選自耐熱劑、染料、顏料、阻燃性賦予劑、界面活性劑、溶劑等之1種或2種以上成分,作為其他任意成分。
本發明之半導體裝置之製造方法並無特別限定,例如,圖1所示之光半導體裝置(LED)可如下所述製造。
藉由接著材料4將發光二極體(LED)元件5黏晶於聚鄰苯二甲醯胺(PPA)樹脂製殼體1內之晶片座3上。其次,將發光二極體(LED)元件5及經鍍金之導線2藉由金製接合線6進行打線結合。其次,將上述組合物注入聚鄰苯二甲醯胺(PPA)樹脂製殼體1內,使其硬化,藉此,利用包含聚矽氧硬化物之密封材料將發光二極體(LED)元件5、經鍍金之導線2及金製接合線6密封。於該製造方法中,作為使上述組合物硬化之方法,可藉由室溫放置或加熱進行硬化,為了使其迅速硬化,較佳為加熱。作為加熱溫度,較佳為在50~200℃之範圍內。
關於以此方式獲得之半導體裝置,聚矽氧硬化物之JIS K 6253所規定之A型硬度計硬度較佳為10~99,尤佳為15~95。其原因在於:若聚矽氧硬化物之硬度為上述範圍之下限以上,則硬化物之強度變大,可充分地保護半導體元件避免來自外部之應力,另一方面,若為上述範圍之上限以下,則硬化物變得柔軟,可充分地保護半導體元件避免熱衝擊。
其次,詳細地說明本發明之半導體元件密封用硬化性聚矽氧組合物。
本發明之半導體元件密封用硬化性聚矽氧組合物之特徵在於:其係用於密封半導體裝置中之經鍍金之導線或基板及半導體元件之矽氫化反應硬化性聚矽氧組合物,且至少包含(A)於一分子中至少具有2
個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)。
關於上述(A)成分~(D)成分,如上所述。又,於本組合物中,除用以延長常溫下之可使用壽命,提高保存穩定性之(E)矽氫化反應抑制劑以外,亦可含有接著促進劑;螢光體;選自二氧化矽、玻璃、及氧化鋁等之1種或2種以上之無機質填充劑;聚矽氧橡膠粉末;聚矽氧樹脂、及聚甲基丙烯酸酯樹脂等樹脂粉末;選自耐熱劑、染料、顏料、阻燃性賦予劑、界面活性劑、溶劑等之1種或2種以上之成分。關於該等成分及其含量係如上所述。
此種本發明之硬化性聚矽氧組合物為包含上述(A)成分~(D)成分,進而包含上述任意成分者,可設為一液型、或區分為任意成分之二液型。
使用實施例及比較例詳細地說明本發明之半導體裝置及半導體元件密封用硬化性聚矽氧組合物。再者,化學式中,Me表示甲基,Vi表示乙烯基,Ph表示苯基。
[實施例1~5、比較例1~7]
將下述成分按照以下之表1所示之組成(質量份)均勻地混合,製備實施例1~5及比較例1~7之硬化性聚矽氧組合物。又,表1中,SiH/Vi表示硬化性聚矽氧組合物中,(B)成分中之鍵結矽原子之氫原子相對於(A)成分中之乙烯基之合計1莫耳之合計莫耳數。
使用如下成分作為(A)成分。再者,有機聚矽氧烷可藉由公知之
製法獲得。又,黏度為25℃下之值,按照JIS K7117-1使用B型黏度計進行測定。又,乙烯基之含量藉由FT-IR、NMR、GPC等分析進行測定。
(a-1)成分:黏度300mPa‧s,以平均式:Me2ViSiO(Me2SiO)150SiMe2Vi
所表示之分子鏈兩封端之二甲基乙烯基矽烷氧基封阻二甲基聚矽氧烷(乙烯基之含量=0.48質量%)
(a-2)成分:黏度10,000mPa‧s,以平均式:Me2ViSiO(Me2SiO)500SiMe2Vi
所表示之分子鏈兩封端之二甲基乙烯基矽烷氧基封阻二甲基聚矽氧烷(乙烯基之含量=0.15質量%)
(a-3)成分:黏度1,000mPa‧s,以平均式:Me2ViSiO(MePhSiO)30SiMe2Vi
所表示之甲基苯基聚矽氧烷(乙烯基之含量=1.27質量%)
(a-4)成分:25℃下為白色固體狀,為甲苯可溶性,以平均單元式:(Me2ViSiO1/2)0.13(Me3SiO1/2)0.45(SiO4/2)0.42(HO1/2)0.01
所表示之於一分子中具有2個以上之乙烯基之有機聚矽氧烷樹脂(乙烯基之含量=3.4質量%)
(a-5)成分:25℃下為白色固體狀,為甲苯可溶性,以平均單元式:(Me2ViSiO1/2)0.15(Me3SiO1/2)0.38(SiO4/2)0.47(HO1/2)0.01
所表示之於一分子中具有2個以上之乙烯基之有機聚矽氧烷(乙烯基之含量=4.2質量%)
(a-6)成分:25℃下為白色固體狀,為甲苯可溶性,以平均單元式:
(PhSiO3/2)0.75(Me2ViSiO1/2)0.25
所表示之於一分子中具有2個以上之乙烯基之有機聚矽氧烷(乙烯基之含量=5.6質量%)
使用如下成分作為(B)成分。再者,有機氫化聚矽氧烷可藉由公知之製法而獲得。又,黏度為25℃下之值,按照JIS K7117-1使用B型黏度計進行測定。又,鍵結矽原子之氫原子之含量及每個分子之鍵結矽原子之氫原子之個數藉由FT-IR、NMR、GPC等分析進行測定。
(b-1)成分:以平均式:Me3SiO(MeHSiO)15SiMe3
所表示之黏度5mPa‧s之分子鏈兩封端之三甲基矽烷氧基封阻甲基氫聚矽氧烷(鍵結矽原子之氫原子之含量=1.42質量%)
(b-2)成分:以平均式:Me3SiO(MeHSiO)55SiMe3
所表示之黏度20mPa‧s之分子鏈兩封端之三甲基矽烷氧基封阻聚甲基氫矽氧烷(鍵結矽原子之氫原子之含量=1.6質量%)
(b-3)成分:以平均式:HMe2SiO(Ph2SiO)SiMe2H
所表示之黏度5mPa‧s之分子鏈兩封端之二甲基氫矽烷氧基封阻二苯基聚矽氧烷(鍵結矽原子之氫原子之含量=0.6質量%)
(b-4)成分:以平均單元式:(PhSiO3/2)0.4(HMe2SiO1/2)0.6
所表示之黏度25mPa‧s之於一分子中具有2個以上之鍵結矽原子之氫原子之支鏈狀有機聚矽氧烷(鍵結矽原子之氫原子之含量=0.65質量%)
使用如下成分作為(C)成分。
(c-1)成分:3-巰丙基三甲氧基矽烷
(c-2)成分:雙(3-三乙氧基矽烷基丙基)四硫化物
(c-3)成分:1,3,5-異氰尿酸三縮水甘油酯
(c-4)成分:3-甲基丙烯醯氧丙基三甲氧基矽烷
(c-5)成分:3-丙烯醯氧丙基三甲氧基矽烷
(c-6)成分:3-縮水甘油氧基丙基三甲氧基矽烷
(c-7)成分:2-巰基苯并噻唑
使用鉑之1,3-二乙烯基四甲基二矽氧烷錯合物之1,3-二乙烯基四甲基二矽氧烷溶液(鉑金屬之含量=約5000質量ppm)作為(D)成分。
使用1-乙炔基環己烷-1-醇作為(E)成分。
[評價及結果]
關於實施例1~5及比較例1~7所獲得之硬化性聚矽氧組合物,將(甲)150℃之凝膠化時間之測定、(乙)聚矽氧硬化物之硬度之測定、(丙)密封材料之初期剝離率之測定、及(丁)密封材料之吸濕回焊後之剝離率之測定結果示於表1。
150℃之凝膠化時間(秒)係使用Alpha Technologies Rheometer MDR 2000P進行測定。
關於聚矽氧硬化物之硬度,藉由將實施例1~5及比較例1~7所獲得之硬化性聚矽氧組合物於150℃下以1小時、5MPa之壓力進行加壓成形,製作片狀之聚矽氧硬化物,藉由JIS K 6253所規定之A型硬度計測定該硬度。
[光半導體裝置(LED)之製作]
經鍍金之導線自側壁朝著底部阻塞之圓筒狀之聚鄰苯二甲醯胺(PPA)樹脂殼(內徑2.0mm、深度1.0mm)之內底部之中心部外延,於經鍍金之導線之中央部上載置有LED晶片,將各實施例或各比較例之硬化性聚矽氧組合物脫泡,使用分注器注入LED晶片及經鍍金之導線藉由金製接合線電性連接之前驅物之聚鄰苯二甲醯胺(PPA)樹脂殼
內,於加熱烘箱中以100℃加熱30分鐘,繼而以150℃加熱1小時,進行硬化,藉此,製造圖1所示之光半導體裝置(LED)各20個。
[密封材料之初期剝離率]
關於20個上述光半導體裝置(LED),利用光學顯微鏡觀察經鍍金之導線2與密封材料7間之剝離狀態,將剝離之個數/20個作為剝離率。
[吸濕回焊後之剝離率]
使20個上述光半導體裝置(LED)於85℃/85%RH之高溫高濕條件下保持168小時後,於280℃之烘箱內靜置30秒。其後,設為室溫(25℃),利用光學顯微鏡觀察經鍍金之導線2與密封材料7間之剝離狀態,將剝離之個數/20個作為剝離率。
根據表1之結果,表示利用實施例1~5之硬化性聚矽氧組合物之硬化物密封之半導體裝置具有較高之耐剝離性。
本發明之半導體裝置於吸濕回焊試驗後,難以產生與包含經鍍金之導線及聚矽氧硬化物之密封材料之剝離,故而作為可靠性之要求嚴格之光半導體裝置(LED)較佳。
1‧‧‧聚鄰苯二甲醯胺(PPA)樹脂製殼體
2‧‧‧經鍍金之導線
3‧‧‧晶片座
4‧‧‧接著材料
5‧‧‧發光二極體(LED)元件
6‧‧‧金製接合線
7‧‧‧包含聚矽氧硬化物之密封材料
Claims (4)
- 一種半導體裝置,其係利用聚矽氧硬化物將經鍍金之導線或基板及半導體元件密封而成者,且上述聚矽氧硬化物為至少包含(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)之矽氫化反應硬化性聚矽氧組合物之硬化物。
- 如請求項1之半導體裝置,其中聚矽氧硬化物之JIS K 6253所規定之A型硬度計硬度為10~99。
- 如請求項1或2之半導體裝置,其中半導體元件為發光二極體(LED)元件。
- 一種矽氫化反應硬化性聚矽氧組合物,其用於密封半導體裝置中之經鍍金之導線或基板及半導體元件,且至少包含(A)於一分子中至少具有2個烯基之有機聚矽氧烷、(B)於一分子中至少具有2個鍵結矽原子之氫原子之有機氫化聚矽氧烷{相對於(A)成分中之烯基1莫耳,本成分中之鍵結矽原子之氫原子成為0.1~10莫耳之量}、(C)鍵結硫原子且具有鍵結矽原子之水解性基之有機矽化合物(相對於本組合物為0.0001~2質量%)、及(D)矽氫化反應用鉑系觸媒(相對於本組合物,鉑原子成為0.01~500質量ppm之量)。
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KR20080031734A (ko) * | 2005-06-24 | 2008-04-10 | 엑손모빌 케미칼 패턴츠 인코포레이티드 | 작용화된 프로필렌 공중합체 접착제 조성물 |
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TWI791554B (zh) * | 2017-07-31 | 2023-02-11 | 美商陶氏有機矽公司 | 可固化有機聚矽氧烷組成物及光學半導體裝置 |
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CN105229783B (zh) | 2018-06-22 |
JPWO2014192969A1 (ja) | 2017-02-23 |
WO2014192969A1 (ja) | 2014-12-04 |
KR20160013872A (ko) | 2016-02-05 |
TWI621664B (zh) | 2018-04-21 |
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