JP6355210B2 - 半導体装置および半導体素子封止用硬化性シリコーン組成物 - Google Patents

半導体装置および半導体素子封止用硬化性シリコーン組成物 Download PDF

Info

Publication number
JP6355210B2
JP6355210B2 JP2015519987A JP2015519987A JP6355210B2 JP 6355210 B2 JP6355210 B2 JP 6355210B2 JP 2015519987 A JP2015519987 A JP 2015519987A JP 2015519987 A JP2015519987 A JP 2015519987A JP 6355210 B2 JP6355210 B2 JP 6355210B2
Authority
JP
Japan
Prior art keywords
group
component
semiconductor device
bonded
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015519987A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2014192969A1 (ja
Inventor
侑典 宮本
侑典 宮本
宏明 吉田
宏明 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
Original Assignee
Dow Corning Toray Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Publication of JPWO2014192969A1 publication Critical patent/JPWO2014192969A1/ja
Application granted granted Critical
Publication of JP6355210B2 publication Critical patent/JP6355210B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/548—Silicon-containing compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
JP2015519987A 2013-05-29 2014-05-28 半導体装置および半導体素子封止用硬化性シリコーン組成物 Active JP6355210B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013112503 2013-05-29
JP2013112503 2013-05-29
PCT/JP2014/064798 WO2014192969A1 (ja) 2013-05-29 2014-05-28 半導体装置および半導体素子封止用硬化性シリコーン組成物

Publications (2)

Publication Number Publication Date
JPWO2014192969A1 JPWO2014192969A1 (ja) 2017-02-23
JP6355210B2 true JP6355210B2 (ja) 2018-07-11

Family

ID=51988981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015519987A Active JP6355210B2 (ja) 2013-05-29 2014-05-28 半導体装置および半導体素子封止用硬化性シリコーン組成物

Country Status (5)

Country Link
JP (1) JP6355210B2 (zh)
KR (1) KR20160013872A (zh)
CN (1) CN105229783B (zh)
TW (1) TWI621664B (zh)
WO (1) WO2014192969A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660008B (zh) * 2014-08-26 2019-05-21 日商琳得科股份有限公司 硬化性組合物、硬化性組合物之製造方法、硬化物、硬化性組合物之使用方法以及光裝置
JP6480360B2 (ja) * 2016-02-18 2019-03-06 信越化学工業株式会社 半導体装置
WO2017183259A1 (ja) * 2016-04-22 2017-10-26 株式会社Adeka ケイ素含有硬化性組成物及びその硬化物
JP6754317B2 (ja) * 2017-04-27 2020-09-09 信越化学工業株式会社 付加硬化型シリコーン組成物、該組成物の製造方法、シリコーン硬化物、及び光学素子
JP7130316B2 (ja) * 2017-07-05 2022-09-05 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 硬化性ポリオルガノシロキサン組成物
TWI829640B (zh) * 2017-07-10 2024-01-21 美商陶氏有機矽公司 可固化聚矽氧組合物及光學半導體裝置
TWI791554B (zh) * 2017-07-31 2023-02-11 美商陶氏有機矽公司 可固化有機聚矽氧烷組成物及光學半導體裝置
CN112300576B (zh) * 2019-07-30 2024-05-14 杜邦东丽特殊材料株式会社 热熔性固化性有机硅组合物、密封剂、膜以及光半导体元件
JP2021080365A (ja) * 2019-11-19 2021-05-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 密着促進組成物および積層体の製造方法、ならびに膜形成組成物および膜の製造方法
US20230250284A1 (en) * 2020-07-13 2023-08-10 Dow Toray Co., Ltd. Silicone gel composition, cured product thereof, and use therefor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07228667A (ja) * 1994-02-18 1995-08-29 Sekisui Chem Co Ltd 型内被覆成形用被覆組成物
CN101248133B (zh) * 2005-06-24 2012-11-21 埃克森美孚化学专利公司 官能化丙烯共聚物粘合剂组合物
JP5705416B2 (ja) * 2008-04-11 2015-04-22 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 半導体用硬化性シリコーン組成物及びそれを用いた半導体装置
JP2011009346A (ja) * 2009-06-24 2011-01-13 Shin-Etsu Chemical Co Ltd 光半導体装置
ATE555178T1 (de) * 2009-12-18 2012-05-15 Sika Technology Ag Heissschmelzklebstoffzusammensetzungen mit guter haftung sowohl auf polaren als auch apolaren substraten
JP5682257B2 (ja) * 2010-07-30 2015-03-11 三菱化学株式会社 半導体発光装置用樹脂組成物
KR101305438B1 (ko) * 2011-05-13 2013-09-06 현대자동차주식회사 폴리우레탄과 알루미늄의 접착을 위한 접착제
JP2013043901A (ja) * 2011-08-22 2013-03-04 Sumitomo Rubber Ind Ltd タイヤ用ゴム組成物及び空気入りタイヤ
JP5545601B2 (ja) * 2011-11-07 2014-07-09 信越化学工業株式会社 蛍光体高充填波長変換シート、それを用いた発光半導体装置の製造方法、及び該発光半導体装置
JP6087127B2 (ja) * 2012-12-14 2017-03-01 株式会社カネカ 流動性を改善した熱硬化性樹脂組成物及びそれを用いた半導体のパッケージ

Also Published As

Publication number Publication date
KR20160013872A (ko) 2016-02-05
CN105229783A (zh) 2016-01-06
CN105229783B (zh) 2018-06-22
JPWO2014192969A1 (ja) 2017-02-23
TWI621664B (zh) 2018-04-21
TW201502208A (zh) 2015-01-16
WO2014192969A1 (ja) 2014-12-04

Similar Documents

Publication Publication Date Title
JP6355210B2 (ja) 半導体装置および半導体素子封止用硬化性シリコーン組成物
EP3045499B1 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
KR101722089B1 (ko) 경화성 오가노폴리실록산 조성물 및 광반도체 장치
EP2914664B1 (en) Curable silicone composition, cured product thereof, and optical semiconductor device
US9688822B2 (en) Organopolysiloxane, curable silicone composition, cured product thereof, and optical semiconductor
KR102455665B1 (ko) 경화성 실리콘 조성물, 이의 경화물 및 광반도체 장치
KR20190103457A (ko) 경화성 오가노폴리실록산 조성물 및 반도체 장치
JP7220718B2 (ja) 硬化性シリコーン組成物、その硬化物、および光半導体デバイス
JPWO2015186323A1 (ja) 接着促進剤、硬化性シリコーン組成物、および半導体装置
KR102498396B1 (ko) 경화성 실리콘 조성물 및 그것을 사용한 광반도체 장치
JPWO2019026754A1 (ja) 硬化性シリコーン組成物、および光半導体装置
KR102651640B1 (ko) 경화성 실리콘 조성물 및 광반도체 장치
JP2023132309A (ja) 硬化性シリコーン組成物
JP2023132308A (ja) 硬化性シリコーン組成物
JP2022104216A (ja) 硬化性シリコーン組成物、封止材、及び光半導体装置
JPWO2019026755A1 (ja) 硬化性シリコーン組成物、および光半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170321

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180116

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180606

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180608

R150 Certificate of patent or registration of utility model

Ref document number: 6355210

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250