TW201501246A - 具有水平半導體元件和垂直半導體元件的半導體部件 - Google Patents

具有水平半導體元件和垂直半導體元件的半導體部件 Download PDF

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TW201501246A
TW201501246A TW102132088A TW102132088A TW201501246A TW 201501246 A TW201501246 A TW 201501246A TW 102132088 A TW102132088 A TW 102132088A TW 102132088 A TW102132088 A TW 102132088A TW 201501246 A TW201501246 A TW 201501246A
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electrode
semiconductor component
horizontal
vertical
semiconductor device
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TW102132088A
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English (en)
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TWI560814B (en
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Hsin-Chang Tsai
Chia-Yen Lee
Peng-Hsin Lee
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Delta Electronics Inc
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Publication of TWI560814B publication Critical patent/TWI560814B/zh

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Abstract

本發明提供一種半導體部件，包含水平半導體元件、垂直半導體元件以及引線框架。水平半導體元件、垂直半導體元件各自具有第一側以及第二側，水平半導體元件包含第一電極、第二電極、以及控制電極位於第一側。垂直半導體元件包含第一電極位於第一側、以及第二電極和控制電極位於第二側。引線框架分別電性連接水平半導體元件之第一電極以及第二電極、垂直半導體元件之第二電極、以及水平、垂直半導體元件各自之控制電極，其中垂直半導體元件之第一側係配置於水平半導體元件之第二側，且水平、垂直半導體元件之各第一電極亦彼此電性連接。

Description

具有水平半導體元件和垂直半導體元件的半導體部件
本發明係關於一種半導體部件，且特別是有關於一種具有水平半導體元件和垂直半導體元件的半導體部件。
在高電子遷移率電晶體(high electron mobility transistors，HEMTs) 元件應用上，越來越多以III-V族化合物半導體像是砷化镓（GaAs）、氮化镓（GaN）等為基材的半導體元件被開發出來，與傳統的矽基半導體(silicon-based semiconductor)相較，III-V族化合物半導體因為具備更優秀的高功率表現，因此格外引人矚目。
III-V族化合物半導體與傳統矽基半導體的不同之處在於，其導電通道的形成係應用元件中的各層能隙之間的差異，進而於層間界面處形成二維電子氣（two-dimensional electron gas，2DEG），並以2DEG作為導電通道，相關技術在美國專利US 5192987以及US 6849882中已經被提出。然而，當前在III-V族化合物半導體的製作上，其仍須以水平半導體元件的形式，即其源極、汲極以及閘極三者係製作於半導體裝置的同一側的位置。
另一方面來說，兩個或兩個以上的半導體元件彼此層疊封裝為半導體部件，已成為增進半導體部件整體效能逐漸普及的手段之一。因此，一種可以整合垂直半導體元件與水平半導體元件的半導體部件是當今相關業界十分重要的課題。
本發明提出一種半導體部件，包含水平半導體元件、垂直半導體元件以及引線框架。水平半導體元件具有第一側以及第二側，水平半導體元件包含主動區域位於第一側，主動區域包含第一電極、第二電極、以及控制電極。垂直半導體元件具有第一側以及第二側，垂直半導體元件包含第一電極位於第一側、以及第二電極和控制電極位於第二側。引線框架分別電性連接水平半導體元件之第一電極、水平半導體元件之第二電極、垂直半導體元件之第二電極、以及水平半導體元件和垂直半導體元件各自之控制電極，其中垂直半導體元件之第一側係配置於水平半導體元件之第二側，且水平半導體元件之第一電極亦與垂直半導體元件之第一電極電性連接。
在本發明之一實施方式中，前述水平半導體元件之第一側面向引線框架。
在本發明之一實施方式中，前述水平半導體元件之控制電極與垂直半導體元件之第一電極電性連接。
在本發明之一實施方式中，進一步包含鈍化層設置於水平半導體元件之第一側。
在本發明之一實施方式中，前述引線框架包含複數個部分。
在本發明之一實施方式中，前述複數個部分之至少二個部分係實質上共平面。
在本發明之一實施方式中，前述複數個部分之至少二個部分係實質上非共平面。
在本發明之一實施方式中，進一步包含第一連接部電性連接水平半導體元件之第一電極以及垂直半導體元件之第一電極。
在本發明之一實施方式中，進一步包含導體層位於水平半導體元件之第二側，其中垂直半導體元件之第一電極連接導體層，且第一連接部電性連接水平半導體元件之第一電極以及導體層。
在本發明之一實施方式中，前述第一連接部包含金屬夾、導電金屬帶或焊接線。
在本發明之一實施方式中，進一步包含第二連接部同時連接水平半導體元件之第二電極以及引線框架。
在本發明之一實施方式中，前述第二連接部包含金屬夾、導電金屬帶或焊接線。
在本發明之一實施方式中，進一步包含第三連接部同時連接垂直半導體元件之控制電極以及引線框架。
在本發明之一實施方式中，前述第三連接部包含金屬夾、導電金屬帶或焊接線。
在本發明之一實施方式中，前述水平半導體元件包含一金屬-絕緣體-半導體場效電晶體(MISFET)、金屬半導體場效電晶體(MESFET)、或高電子遷移電晶體(HEMT)。
在本發明之一實施方式中，前述水平半導體元件包含氮化物基功率電晶體。
在本發明之一實施方式中，前述水平半導體元件之第一電極係源極，水平半導體元件之第二電極係汲極，垂直半導體元件之第一電極係汲極，垂直半導體元件之第二電極係源極，而水平、垂直半導體元件之各自之控制電極均係閘極。
在本發明之一實施方式中，前述水平半導體元件的厚度大於該垂直半導體元件的厚度。
在本發明之一實施方式中，前述水平半導體元件之控制電極與垂直半導體元件之第二電極電性連接。
100‧‧‧半導體部件
110‧‧‧水平半導體元件
111‧‧‧第一側
112‧‧‧第二側
113‧‧‧第一電極
114‧‧‧第二電極
115‧‧‧控制電極
120‧‧‧垂直半導體元件
121‧‧‧第一側
122‧‧‧第二側
123‧‧‧第一電極
124‧‧‧第二電極
125‧‧‧控制電極
130‧‧‧引線框架
131‧‧‧部份
132‧‧‧部份
133‧‧‧部份
134‧‧‧部份
135‧‧‧部份
150‧‧‧鈍化層
160‧‧‧第一連接部
170‧‧‧導體層
180‧‧‧第二連接部
190‧‧‧第三連接部
192‧‧‧焊接線
200‧‧‧半導體部件
300‧‧‧半導體部件
400‧‧‧半導體部件
500‧‧‧半導體部件
600‧‧‧半導體部件
本發明之上述和其他態樣、特徵及其他優點參照說明書內容並配合附加圖式得到更清楚的了解，其中：
第1圖繪示本發明一實施方式之半導體部件結構示意圖。
第2圖繪示本發明另一實施方式之半導體部件結構示意圖。
第3圖繪示本發明又一實施方式之半導體部件結構示意圖。
第4圖繪示本發明又一實施方式之半導體部件結構示意圖。
第5圖繪示本發明又一實施方式之半導體部件結構示意圖。
第6圖繪示本發明又一實施方式之半導體部件結構示意圖。
本發明之目的及優點，藉由下列實施例中伴隨圖式與元件符號之詳細敘述後，將更為顯著。
為了使本揭示內容之敘述更加詳盡與完備，可參照所附之圖式及以下所述各種實施例，圖式中相同之號碼代表相同或相似之元件，並且為求清楚說明，元件之大小或厚度可能誇大顯示，並未依照原尺寸作圖。此外，為簡化圖式起見，一些結構與元件在圖式中將以簡單示意的方式繪示之。然而，應瞭解到所提供之實施例並非用以限制本發明所涵蓋的範圍。這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。而結構運作之描述非用以限制其執行之順序，任何由元件重新組合之結構，所產生具有均等功效的裝置，皆為本發明所涵蓋的範圍。
請參照第1圖，第1圖繪示本發明一實施方式半導體部件100之立體示意圖。半導體部件100包含水平半導體元件110、垂直半導體元件120、以及引線框架130。
水平半導體元件110具有第一側111以及第二側112。如第1圖所示，第二側112係指水平半導體元件110之上表面；而第一側111係指水平半導體元件110之下表面。
水平半導體元件110亦具有主動區域位於第一側111，其包含第一電極113、第二電極114、以及控制電極115位於第一側111(即水平半導體元件110之下表面)。本發明之水平半導體元件110 例如可以是由矽基半導體或化合物半導體所製作的金屬-絕緣體-半導體場效電晶體(MISFET)、金屬半導體場效電晶體(MESFET)或高電子遷移電晶體(HEMT)，但不以此為限。在上述元件中，水平半導體元件110之第一電極113係源極，水平半導體元件110之第二電極114係汲極，而水平半導體元件110之控制電極115係閘極。在本發明之一實施方式中，水平半導體元件110係高電子遷移電晶體(HEMT)，其包含數個高能隙材料層，例如III-V族半導體層(III-V semiconductor layers)。在一實施方式中，水平半導體元件110包含通道層以及阻障層，其中通道層係由氮化鎵(GaN)所組成，而阻障層係由氮化鎵鋁(AlGaN )所組成。由於這兩層所具有的能隙，二維電子氣(two-dimensional electron gas，2DEG)會形成於兩層之間的界面，而此二維電子氣即可作為導電通道(conductive channel)。在此二維電子氣中，電荷流動率以及二維電荷載子密度均相當高，因此提供了在水平半導體元件110之第一電極113(源極)和水平半導體元件110 之第二電極114(汲極)之間的主動區域(active area)。
垂直半導體元件120具有第一側121以及第二側122。如第1圖所示，第二側122係指垂直半導體元件120之上表面；而第一側121係指垂直半導體元件120之下表面。
垂直半導體元件120包含第一電極123、第二電極124以及控制電極125。第二電極124以及控制電極125配置於第二側122(垂直半導體元件120之上表面)，而第一電極123則配置於第一側121(垂直半導體元件120之下表面)。本發明之垂直半導體元件120例如可以是金屬-氧化物-半導體場效電晶體(metal-oxide-semiconductor field-effect transistor，MOSFET)，但不以此為限。以金屬-氧化物-半導體場效電晶體為例，垂直半導體元件120之第一電極123係 汲極，垂直半導體元件120之第二電極124係源極，而垂直半導體元件120之控制電極125係閘極。
引線框架130 分別電性連接水平半導體元件110之第一電極113、水平半導體元件110之第二電極114、垂直半導體元件120之第二電極124、水平半導體元件110之控制電極115、以及垂直半導體元件120之控制電極125。在本發明之一實施方式中，引線框架130 包含複數個部分。如第1圖所示，複數個部分包括部分131、部分132、部分133、部分134以及部分135。引線框架130之部分131係電性連接於水平半導體元件110之第一電極113；引線框架130之部分132係電性連接於水平半導體元件110之第二電極114；引線框架130之部分133係電性連接於水平半導體元件110之控制電極115；引線框架130之部分134係電性連接於垂直半導體元件120之第二電極124；引線框架130之部分135則係電性連接於垂直半導體元件120 之控制電極125。值得注意的是，垂直半導體元件120之第一側121係安裝於水平半導體元件110之第二側112上方，而水平半導體元件110之第一電極113亦與垂直半導體元件120之第一電極123具有電性連接。在本發明之一實施方式中，水平半導體元件110 之第一側111 係面向引線框架130。
如第1圖所示，水平半導體元件110之第一電極113、第二電極114、以及控制電極115均分別與引線框架130之部分131、引線框架130之部分132、以及引線框架130之部分133覆晶接合(flip-chip bonded)。換言之，水平半導體元件110之第一電極113、第二電極114以及控制電極115係分別設置於其各自對應之引線框架 130的部分131、132、以及133。值得注意的是，因為本發明之水平半導體元件110的所有電極(即第一電極113、第二電極 114、以及控制電極115)均位於水平半導體元件110之同一側，從而僅須單一步驟，即可使所有電極全數覆晶接合在各自所對應的引線框架130各部分131、132、以及133上。
再如第1圖所示，複數條焊接線192各自作為垂直半導體元件120之第二電極124和引線框架130之部分134、垂直半導體元件120之控制電極125和引線框架130之部分135、水平半導體元件110之第一電極113和垂直半導體元件120之第一電極123等，兩兩之間電性連接的媒介。值得注意的是，其中一條焊接線192係同時電性連接於水平半導體元件110之第一電極113以及垂直半導體元件120之第一電極123。因此，水平半導體元件110和垂直半導體元件120並非僅是被堆疊於同一封裝結構，更重要的是，因為水平半導體元件110之第一電極113與垂直半導體元件120 之第一電極123之間具有電性連接，因此水平半導體元件110與垂直半導體元件120兩者係形成串聯之電性關係。在本發明之一實施方式中，焊接線192包含金(Au)、金合金、鋁(Al)、鋁合金、銅(Cu)或銅合金。
在本發明之一實施方式中，水平半導體元件110之第一電極113係源極，水平半導體元件110之第二電極114係汲極, 而水平半導體元件110之控制電極125係閘極；垂直半導體元件120之第一電極123係汲極，垂直半導體元件120之第二電極124係源極，垂直半導體元件120之控制電極125係閘極。據此，在半導體部件100內部之電流方向係由引線框架130之部分132進入，流向水平半導體元件110之第二電極114，接著是水平半導體元件110之第一電極113，引線框架130之部分131，垂直半導體元件120之第一電極123, 垂直半導體元件120之第二電極124,最後由引線框架130之部分134流出半導體部件100。而垂直半導體元件120之控制電極125則是控制垂直半導體元件120之第一電極123，與垂直半導體元件120之第二電極124之間電荷流動之開關，其控制係對引線框架130之部分135以輸入訊號的方式調控。類似地，水平半導體元件110之控制電極115則是控制水平半導體元件110之第二電極114，與水平半導體元件110之第一電極113之間電荷流動之開關，其控制係對引線框架130之部分133以輸入訊號的方式調控。在本發明之一實施方式中，引線框架130之部分134係電性連接於引線框架130之部分133。換言之，垂直半導體元件120之第二電極124係電性連接於水平半導體元件110之控制電極115。
在本發明之另一實施方式中，水平半導體元件110之第一電極113係汲極，水平半導體元件110之第二電極114係源極，而水平半導體元件110之控制電極125係閘極。垂直半導體元件120之第一電極123係源極，垂直半導體元件120之第二電極124係汲極，而垂直半導體元件120之控制電極125係閘極。據此，在半導體部件100內部之電流方向係由引線框架130部分134進入，流向垂直半導體元件120之第二電極124，接著是垂直半導體元件120之第一電極123，引線框架130之部分131，水平半導體元件110之第一電極113, 水平半導體元件110之第二電極114，最後由引線框架130之部分132流出。與前述類似的是，垂直半導體元件120之控制電極125係控制垂直半導體元件120之第二電極124，與垂直半導體元件120之第一電極123之間電荷流動的開關，其控制係對引線框架130之部分135以輸入訊號的方式調控。而水平半導體元件110之控制電極115則為水平半導體元件110之第一電極113，與水平半導體元件110之第二電極114之間電荷流動的開關，其控制係對引線框架130之部分133以輸入訊號的方式調控。
在本發明之一實施方式中，引線框架130之複數個部分131、132、133、134以及135之中，至少有兩個部分實質上共平面。如第1圖所示，引線框架130之所有部分131、132、133、134以及135均實質上共平面。因此，對於半導體部件100各部之訊號的輸入輸出以及開關，均能由半導體部件100所接合之單一側進行。然而，本發明並不限於此，在本發明之另一實施方式中，引線框架130之複數個部分之中，至少有兩個部分實質上非共平面。對於引線框架130之複數個部分的位置，可視實際需要作對應的設計，可為共平面或非共平面。如第1圖所示，在本發明之一實施方式中，引線框架130之部分131(覆晶接合於水平半導體元件110之第一電極113)、引線框架130之部分132(覆晶接合於水平半導體元件110之第二電極114)、以及引線框架130之部分133 (覆晶接合於水平半導體元件110之控制電極115)，因為水平半導體元件110之第一電極113、水平半導體元件110之第二電極114以及水平半導體元件110之控制電極115均位於水平半導體元件110之第一側111，所以部分131、部分132以及部分133三者位於共平面。至於分別位於不同水平高度而彼此具有電性連接的兩元件，例如引線框架130之部分134與垂直半導體元件120之第二電極124、引線框架130之部分135與垂直半導體元件120之控制電極125、以及引線框架130之部分131與垂直半導體元件120之第一電極123，則分別由不同焊接線192形成前述各元件兩兩之間的電性連接。
然而，焊接線192並非使分別位於不同水平高度的兩元件之間，形成電性連接的唯一方式。在本發明之一實施方式中，進一步包含第一連接部160同時接觸水平半導體元件110之第一電極113與垂直半導體元件120之第一電極123，使兩者之間形成電性連接。在本發明之另一實施方式中，進一步包含第二連接部180 同時接觸垂直半導體元件120之第二電極124與引線框架130之部分134，使兩者之間形成電性連接。如第2圖所示，引線框架130之部分131與垂直半導體元件120之第一電極123兩者之間的電性連接、以及引線框架130之部分134與垂直半導體元件120之第二電極124兩者之間的電性連接，即係分別由第一連接部160、以及第二連接部180形成。在本發明之一實施方式中，第一連接部160包含金屬夾、導電金屬帶或焊接線。在本發明之另一實施方式中，第二連接部180包含金屬夾、導電金屬帶或焊接線。如第2圖所示，第一連接部160係連接引線框架130之部分131，與垂直半導體元件 120之第一電極123兩者的金屬夾，據此，水平半導體元件110之第一電極113 即和垂直半導體元件120之第一電極123形成電性連接，從而水平半導體元件110與垂直半導體元件120兩者即形成串聯的電性連接。
亦如第2圖所示，第二連接部180係連接引線框架130之部分134，與垂直半導體元件120之第二電極124兩者的金屬夾，據此，即可執行對於半導體部件200之訊號的輸出入。值得注意的是，因為金屬夾具有較焊接線192更大的截面積，所以金屬夾承載電流的能力亦較焊接線192優良許多。據此，如第2圖所示之半導體部件200與第1圖所示之半導體部件100相較，半導體部件200具有在更高電流下操作的能力。此外，具有較焊接線192更大截面積的金屬夾尚能發揮幫助散熱的特殊功效，使得半導體部件200在操作過程中產生的熱能，得以更充分地向外界散出。眾所周知的是，任何元件若在操作過程中熱量累積至過熱時，元件即有損壞的疑慮。而元件在高電流運作下，特別容易造成操作過程中熱量快速累積。據此，如第2圖所示之半導體部件200與第1圖所示之半導體部件100相較，具有在高操作電流下更優良的可靠度。在本發明之一實施方式中，金屬夾包含鎳(Ni)、鋁(Al)、銅(Cu)、銀(Ag)、金(Au)、以及該等金屬之合金。
如第3圖所示，在本發明之一實施方式中，水平半導體元件110之控制電極115係電性連接於垂直半導體元件120之第一電極123。舉例來說，水平半導體元件110之第一電極113以及控制電極115，兩者均以覆晶接合方式電性連接於引線框架130之同一部分131。換句話說，水平半導體元件110之控制電極115並不需要被獨立控制。因此，如第1圖和第2圖所示之引線框架130之部分133(對應水平半導體元件110之控制電極115)，可進一步被省略。在本發明之一實施方式中，水平半導體元件110之第一電極113係源極，水平半導體元件110之第二電極114係汲極，而水平半導體元件110之控制電極125係閘極；垂直半導體元件120之第一電極123係汲極，垂直半導體元件120之第二電極124係源極，而垂直半導體元件120之控制電極125係閘極。據此，在半導體部件300內部之電流方向係由引線框架130之部分132進入，流向水平半導體元件110之第二電極114，接著是水平半導體元件110之第一電極113，引線框架130之部分131，垂直半導體元件120之第一電極123, 垂直半導體元件120之第二電極124,最後由引線框架130之部分134流出半導體部件100。而垂直半導體元件120之控制電極125則是控制垂直半導體元件120之第一電極123，與垂直半導體元件120之第二電極124之間電荷流動之開關，其控制係對引線框架130之部分135以輸入訊號的方式調控。然而，水平半導體元件110 係與垂直半導體元件120串聯，即不需對水平半導體元件110獨立控制。明確來說，當引線框架130之部分131接收到來自水平半導體元件110之第二電極114的電流訊號時，電流訊號接著會同時流向水平半導體元件110之第一電極113(源極)、以及水平半導體元件110之控制電極115 (閘極)。因此，當垂直半導體元件120被打開，因為電流同時流入水平半導體元件110之控制電極115(閘極)和水平半導體元件110之第一電極113(源極)，水平半導體元件110將直接被開啟。在此實施方式中，半導體部件300實質上僅具有一個控制電極125(位於垂直半導體元件120之第二側122)，以控制彼此串聯的水平半導體元件110和垂直半導體元件120。一般說來，垂直半導體元件120與水平半導體元件110相較之下，具有更快速開關切換的能力。在本發明之一實施方式中，水平半導體元件110具有的厚度大於垂直半導體元件120所具有的厚度。因此，垂直半導體元件120對於由其控制電極125(閘極)傳來的驅動訊號具有比水平半導體元件110更迅速的反應能力。據此，半導體部件300開訊號傳遞和開關控制上，較前述之半導體部件100、200更為迅速簡易。
在本發明之另一實施方式中，半導體部件300進一步包含鈍化層150位於水平半導體元件110之第一側111。如第3圖所示，鈍化層150係配置於水平半導體元件110之第一側111，以覆蓋並保護水平半導體元件110之主動區域。主動區域包含第一電極113與第二電極114之間的電流通道。鈍化層150覆蓋水平半導體元件110之主動區域，使其避免與環境中空氣和水氣等接觸，減少其產生變質損壞的機會，因此可有效延長水平半導體元件110的生命期(lifetime)。鈍化層150 可以包含氮化矽(SixNy)、二氧化矽(SiO2)以及三氧化二鋁(Al2O3)。
如第3圖所示，在本發明之一實施方式中，鈍化層150接觸引線框架130之部分131，而引線框架130之部分131係水平半導體元件110之第一電極113以及控制電極115均具有覆晶接合之處。鈍化層150可吸收水平半導體元件110之主動區域在操作時產生的熱量，並進一步將熱量往引線框架130之部分131散出。據此更能減輕熱量累積的問題，並提高半導體部件300的可靠度。
參照第4圖，在本發明之另一實施方式中，鈍化層150連接引線框架130之部分132，部分132係與水平半導體元件110之第二電極114覆晶接合處。鈍化層150更進一步發揮吸收由水平半導體元件110之主動區域所產生的熱能，並將熱能往引線框架130之部分132散去的功效。同樣地，減輕了半導體部件400所可能產生的熱量累積，並據此進一步提高半導體部件400的可靠度。
參照第5圖所示，在本發明之另一實施方式中，半導體部件500進一步包含導體層170配置於水平半導體元件110之第二側112，其中垂直半導體元件120之第一電極123連接導體層170，且第一連接部160同時連接水平半導體元件110之第一電極113、以及導體層170。換言之，第一連接部160並非直接連接垂直半導體元件120之第一電極123，而是直接連接導體層170，而導體層170再連接垂直半導體元件120之第一電極123。因此，垂直半導體元件120之第一電極123與水平半導體元件110之第一電極113之間具有電性連接，如同前述各實施方式之半導體部件100、200、300以及400。
參照第6圖，在本發明之另一實施方式中，半導體部件600進一步包含第三連接部190連接垂直半導體元件120之控制電極125、以及引線框架130之部分135。因此，垂直半導體元件120之控制電極125與其對應的引線框架130之部分135，兩者之間即具有電性連接，如同前述各實施方式之半導體部件100、200、300、400以及500。
最後要強調的是，本發明所提供之電子元件封裝體及其製造方法，使封裝體內的導電路徑能夠更確實、成功率更高地被製作出來，同時具有更高的可靠度以及更大的製程容許度，不須複雜的製程步驟，更能降低電子元件封裝體的製造成本。同時尚可針對不同電子元件設計需求，對應不同的線路布局，使線路布局設計更具彈性。
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
 
110‧‧‧水平半導體元件
111‧‧‧第一側
112‧‧‧第二側
113‧‧‧第一電極
114‧‧‧第二電極
115‧‧‧控制電極
120‧‧‧垂直半導體元件
121‧‧‧第一側
122‧‧‧第二側
123‧‧‧第一電極
124‧‧‧第二電極
125‧‧‧控制電極
130‧‧‧引線框架
131‧‧‧部分
132‧‧‧部分
134‧‧‧部分
135‧‧‧部分
150‧‧‧鈍化層
160‧‧‧第一連接部
170‧‧‧導體層
180‧‧‧第二連接部
192‧‧‧焊接線
500‧‧‧半導體部件

Claims (19)

  1. 一種半導體部件，包含：
    一水平半導體元件，具有一第一側以及一第二側，該水平半導體元件包含一主動區域位於該第一側，該主動區域包含一第一電極、一第二電極、以及一控制電極；

    一垂直半導體元件，具有一第一側以及一第二側，該垂直半導體元件包含一第一電極位於該第一側、以及一第二電極和一控制電極位於該第二側；以及

    一引線框架，分別電性連接該水平半導體元件之該第一電極、該水平半導體元件之該第二電極、該垂直半導體元件之該第二電極、以及該水平半導體元件和該垂直半導體元件各自之該控制電極，

    其中該垂直半導體元件之該第一側係配置於該水平半導體元件之該第二側，且該水平半導體元件之該第一電極亦與該垂直半導體元件之該第一電極電性連接。
  2. 如請求項1的半導體部件，其中該水平半導體元件之該第一側面向該引線框架。
  3. 如請求項1的半導體部件，其中該水平半導體元件之該控制電極與該垂直半導體元件的該第一電極電性連接。
  4. 如請求項3的半導體部件，進一步包含一鈍化層設置於該水平半導體元件之該第一側。
  5. 如請求項1的半導體部件，其中該引線框架包含複數個部分。
  6. 如請求項5的半導體部件，其中該些部分之至少二個部分係實質上共平面。
  7. 如請求項5的半導體部件，其中該些部分之至少二個部分係實質上非共平面。
  8. 如請求項1的半導體部件，進一步包含一第一連接部，電性連接該水平半導體元件之該第一電極以及該垂直半導體元件之該第一電極。
  9. 如請求項8的半導體部件，進一步包含一導體層，位於該水平半導體元件之該第二側，其中該垂直半導體元件之該第一電極連接該導體層，且該第一連接部電性連接該水平半導體元件之該第一電極以及該導體層。
  10. 如請求項8的半導體部件，其中該第一連接部包含一金屬夾、導電金屬帶或焊接線。
  11. 如請求項1的半導體部件，進一步包含一第二連接部同時連接該水平半導體元件之該第二電極以及該引線框架。
  12. 如請求項11的半導體部件，其中該第二連接部包含一金屬夾、導電金屬帶或焊接線。
  13. 如請求項1的半導體部件，進一步包含一第三連接部，同時連接該垂直半導體元件之該控制電極以及該引線框架。
  14. 如請求項13的半導體部件，其中該第三連接部包含一金屬夾、導電金屬帶或焊接線。
  15. 如請求項1的半導體部件，其中該水平半導體元件包含一金屬-絕緣體-半導體場效電晶體(MISFET)、金屬半導體場效電晶體(MESFET)、或高電子遷移電晶體(HEMT)。
  16. 如請求項1的半導體部件，其中該水平半導體元件包含一氮化物基功率電晶體。
  17. 如請求項1的半導體部件，其中該水平半導體元件之該第一電極係一源極，該水平半導體元件之該第二電極係一汲極，該垂直半導體元件之該第一電極係一汲極，該垂直半導體元件之該第二電極係一源極，而該水平、垂直半導體元件之該些控制電極均係一閘極。
  18. 如請求項1的半導體部件，其中該水平半導體元件的厚度大於該垂直半導體元件的厚度。
  19. 如請求項1的半導體部件，其中該水平半導體元件之該控制電極與該垂直半導體元件之該第二電極電性連接。
TW102132088A 2013-06-28 2013-09-06 Semiconductor component having a lateral semiconductor device and a vertical semiconductor device TWI560814B (en)

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