CN104253156B - 具有水平半导体元件和垂直半导体元件的半导体部件 - Google Patents

具有水平半导体元件和垂直半导体元件的半导体部件 Download PDF

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CN104253156B
CN104253156B CN201310412957.2A CN201310412957A CN104253156B CN 104253156 B CN104253156 B CN 104253156B CN 201310412957 A CN201310412957 A CN 201310412957A CN 104253156 B CN104253156 B CN 104253156B
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electrode
semiconductor
semiconductor element
horizontal
vertical
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CN104253156A (zh
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蔡欣昌
李嘉炎
李芃昕
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Anchorage Semiconductor Co ltd
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Delta Optoelectronics Inc
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Abstract

本发明提供一种半导体部件，其包括水平半导体元件、垂直半导体元件以及引线框架。水平半导体元件、垂直半导体元件各自具有第一侧以及第二侧，水平半导体元件包括位于第一侧的第一电极、第二电极以及控制电极。垂直半导体元件包括位于第一侧的第一电极、以及位于第二侧的第二电极和控制电极。引线框架分别电连接水平半导体元件的第一电极以及第二电极、垂直半导体元件的第二电极、以及水平、垂直半导体元件各自的控制电极，其中垂直半导体元件的第一侧配置于水平半导体元件的第二侧，且水平、垂直半导体元件的各第一电极亦彼此电连接。

Description

具有水平半导体元件和垂直半导体元件的半导体部件
技术领域
本发明涉及一种半导体部件，且尤其涉及一种具有水平半导体元件和垂直半导体元件的半导体部件。
背景技术
在高电子迁移率晶体管(high electron mobility transistors，HEMTs)元件应用上，越来越多以III-V族化合物半导体像是砷化镓（GaAs）、氮化镓（GaN）等为基材的半导体元件被开发出来，与传统的硅基半导体(silicon-based semiconductor)相较，III-V族化合物半导体因为具备更优秀的高功率表现，因此格外引人瞩目。
III-V族化合物半导体与传统硅基半导体的不同之处在于，其导电通道的形成应用元件中的各层能隙之间的差异，进而于层间界面处形成二维电子气（two-dimensionalelectron gas，2DEG），并以2DEG作为导电通道，相关技术在美国专利US5192987以及US6849882中已经被提出。然而，当前在III-V族化合物半导体的制作上，其仍须以水平半导体元件的形式，即其源极、漏极以与栅极三者制作于半导体装置的同一侧的位置。
另一方面来说，两个或两个以上的半导体元件彼此层叠封装为半导体部件，已成为增进半导体部件整体效能逐渐普及的手段之一。因此，一种可以整合垂直半导体元件与水平半导体元件的半导体部件是当今相关业界十分重要的课题。
发明内容
本发明提出一种半导体部件，包括水平半导体元件、垂直半导体元件以及引线框架。水平半导体元件具有第一侧以及第二侧，水平半导体元件包括位于第一侧的有源区域，有源区域包括第一电极、第二电极以及控制电极。垂直半导体元件具有第一侧以及第二侧，垂直半导体元件包括位于第一侧的第一电极、以及位于第二侧的第二电极和控制电极。引线框架分别电连接水平半导体元件的第一电极、水平半导体元件的第二电极、垂直半导体元件的第二电极、以及水平半导体元件和垂直半导体元件各自的控制电极，其中垂直半导体元件的第一侧配置于水平半导体元件的第二侧，且水平半导体元件的第一电极亦与垂直半导体元件的第一电极电连接。
在本发明的一实施方式中，前述水平半导体元件的第一侧面向引线框架。
在本发明的一实施方式中，前述水平半导体元件的控制电极与垂直半导体元件的第一电极电连接。
在本发明的一实施方式中，进一步包括设置于水平半导体元件的第一侧的钝化层。
在本发明的一实施方式中，前述引线框架包括多个部分。
在本发明的一实施方式中，前述多个部分的至少二个部分实质上共平面。
在本发明的一实施方式中，前述多个部分的至少二个部分实质上非共平面。
在本发明的一实施方式中，进一步包括第一连接部电连接水平半导体元件的第一电极以及垂直半导体元件的第一电极。
在本发明的一实施方式中，进一步包括位于水平半导体元件的第二侧的导体层，其中垂直半导体元件的第一电极连接导体层，且第一连接部电连接水平半导体元件的第一电极以及导体层。
在本发明的一实施方式中，前述第一连接部包括金属夹、导电金属带或焊接线。
在本发明的一实施方式中，进一步包括同时连接水平半导体元件的第二电极以及引线框架的第二连接部。
在本发明的一实施方式中，前述第二连接部包括金属夹、导电金属带或焊接线。
在本发明的一实施方式中，进一步包括同时连接垂直半导体元件的控制电极以及引线框架的第三连接部。
在本发明的一实施方式中，前述第三连接部包括金属夹、导电金属带或焊接线。
在本发明的一实施方式中，前述水平半导体元件包括金属-绝缘体-半导体场效应晶体管(MISFET)、金属半导体场效应晶体管(MESFET)、或高电子迁移率晶体管(HEMT)。
在本发明的一实施方式中，前述水平半导体元件包括氮化物基功率晶体管。
在本发明的一实施方式中，前述水平半导体元件的第一电极为源极，水平半导体元件的第二电极为漏极，垂直半导体元件的第一电极为漏极，垂直半导体元件的第二电极为源极，而水平、垂直半导体元件的各自的控制电极均为栅极。
在本发明的一实施方式中，前述水平半导体元件的厚度大于该垂直半导体元件的厚度。
在本发明的一实施方式中，前述水平半导体元件的控制电极与垂直半导体元件的第二电极电连接。
附图说明
本发明的上述和其他方面、特征及其他优点参照说明书内容并配合附图得到更清楚的了解，其中：
图1绘示本发明一实施方式的半导体部件结构示意图。
图2绘示本发明另一实施方式的半导体部件结构示意图。
图3绘示本发明又一实施方式的半导体部件结构示意图。
图4绘示本发明又一实施方式的半导体部件结构示意图。
图5绘示本发明又一实施方式的半导体部件结构示意图。
图6绘示本发明又一实施方式的半导体部件结构示意图。
其中，附图标记说明如下：
100：半导体部件 132：部分
110：水平半导体元件 133：部分
111：第一侧 134：部分
112：第二侧 135：部分
113：第一电极 150：钝化层
114：第二电极 160：第一连接部
115：控制电极 170：导体层
120：垂直半导体元件 180：第二连接部
121：第一侧 190：第三连接部
122：第二侧 192：焊接线
123：第一电极 200：半导体部件
124：第二电极 300：半导体部件
125：控制电极 400：半导体部件
130：引线框架 500：半导体部件
131：部分 600：半导体部件
具体实施方式
本发明的目的及优点，通过下列实施例中伴随附图与元件符号的详细叙述后，将更为显著。
为了使本公开内容的叙述更加详尽与完备，可参照附图及以下所述各种实施例，附图中相同的号码代表相同或相似的元件，并且为求清楚说明，元件的大小或厚度可能夸大显示，并未依照原尺寸作图。此外，为简化附图起见，一些结构与元件在附图中将以简单示意的方式绘示之。然而，应了解到所提供的实施例并非用以限制本发明所涵盖的范围。这些实务上的细节不应用以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。而结构运作的描述非用以限制其执行的顺序，任何由元件重新组合的结构所产生具有均等功效的装置，皆为本发明所涵盖的范围。
请参照图1，图1绘示本发明一实施方式半导体部件100的立体示意图。半导体部件100包括水平半导体元件110、垂直半导体元件120以及引线框架130。
水平半导体元件110具有第一侧111以及第二侧112。如图1所示，第二侧112指水平半导体元件110的上表面；而第一侧111指水平半导体元件110的下表面。
水平半导体元件110亦具有位于第一侧111的有源区域，其包括位于第一侧111(即水平半导体元件110的下表面)的第一电极113、第二电极114以及控制电极115。本发明的水平半导体元件110例如可以是由硅基半导体或化合物半导体所制作的金属-绝缘体-半导体场效应晶体管(MISFET)、金属半导体场效应晶体管(MESFET)或高电子迁移率晶体管(HEMT)，但不以此为限。在上述元件中，水平半导体元件110的第一电极113为源极，水平半导体元件110的第二电极114为漏极，而水平半导体元件110的控制电极115为栅极。在本发明的一实施方式中，水平半导体元件110为高电子迁移率晶体管(HEMT)，其包括多个高能隙材料层，例如III-V族半导体层(III-V semiconductor layers)。在一实施方式中，水平半导体元件110包括沟道层以及阻障层，其中沟道层由氮化镓(GaN)所组成，而阻障层由氮化镓铝(AlGaN)所组成。由于这两层所具有的能隙，二维电子气(two-dimensional electrongas，2DEG)会形成于两层之间的界面，而此二维电子气即可作为导电沟道(conductivechannel)。在此二维电子气中，电荷流动率以及二维电荷载流子密度均相当高，因此提供了在水平半导体元件110的第一电极113(源极)和水平半导体元件110的第二电极114(漏极)之间的有源区域(active area)。
垂直半导体元件120具有第一侧121以及第二侧122。如图1所示，第二侧122指垂直半导体元件120的上表面；而第一侧121指垂直半导体元件120的下表面。
垂直半导体元件120包括第一电极123、第二电极124以及控制电极125。第二电极124以及控制电极125配置于第二侧122(垂直半导体元件120的上表面)，而第一电极123则配置于第一侧121(垂直半导体元件120的下表面)。本发明的垂直半导体元件120例如可以是金属-氧化物-半导体场效应晶体管(metal-oxide-semiconductor field-effecttransistor，MOSFET)，但不以此为限。以金属-氧化物-半导体场效应晶体管为例，垂直半导体元件120的第一电极123为漏极，垂直半导体元件120的第二电极124为源极，而垂直半导体元件120的控制电极125为栅极。
引线框架130分别电连接水平半导体元件110的第一电极113、水平半导体元件110的第二电极114、垂直半导体元件120的第二电极124、水平半导体元件110的控制电极115、以及垂直半导体元件120的控制电极125。在本发明的一实施方式中，引线框架130包括多个部分。如图1所示，多个部分包括部分131、部分132、部分133、部分134以及部分135。引线框架130的部分131电连接于水平半导体元件110的第一电极113；引线框架130的部分132电连接于水平半导体元件110的第二电极114；引线框架130的部分133电连接于水平半导体元件110的控制电极115；引线框架130的部分134电连接于垂直半导体元件120的第二电极124；引线框架130的部分135则电连接于垂直半导体元件120的控制电极125。值得注意的是，垂直半导体元件120的第一侧121安装于水平半导体元件110的第二侧112上方，而水平半导体元件110的第一电极113亦与垂直半导体元件120的第一电极123具有电连接。在本发明的一实施方式中，水平半导体元件110的第一侧111面向引线框架130。
如图1所示，水平半导体元件110的第一电极113、第二电极114、以及控制电极115均分别与引线框架130的部分131、引线框架130的部分132、以及引线框架130的部分133倒装焊(flip-chip bonded)。换言之，水平半导体元件110的第一电极113、第二电极114以及控制电极115分别设置于其各自对应的引线框架130的部分131、132以及133。值得注意的是，因为本发明的水平半导体元件110的所有电极(即第一电极113、第二电极114、以及控制电极115)均位于水平半导体元件110的同一侧，从而仅须单一步骤，即可使所有电极全数倒装焊在各自所对应的引线框架130各部分131、132以及133上。
再如图1所示，多条焊接线192各自作为垂直半导体元件120的第二电极124和引线框架130的部分134、垂直半导体元件120的控制电极125和引线框架130的部分135、水平半导体元件110的第一电极113和垂直半导体元件120的第一电极123等两两之间电连接的媒介。值得注意的是，其中一条焊接线192同时电连接于水平半导体元件110的第一电极113以及垂直半导体元件120的第一电极123。因此，水平半导体元件110和垂直半导体元件120并非仅是被堆叠于同一封装结构，更重要的是，因为水平半导体元件110的第一电极113与垂直半导体元件120的第一电极123之间具有电连接，因此水平半导体元件110与垂直半导体元件120两者形成串联的电学关系。在本发明的一实施方式中，焊接线192包括金(Au)、金合金、铝(Al)、铝合金、铜(Cu)或铜合金。
在本发明的一实施方式中，水平半导体元件110的第一电极113为源极，水平半导体元件110的第二电极114为漏极,而水平半导体元件110的控制电极115为栅极；垂直半导体元件120的第一电极123为漏极，垂直半导体元件120的第二电极124为源极，垂直半导体元件120的控制电极125为栅极。据此，在半导体部件100内部的电流方向为：由引线框架130的部分132进入，流向水平半导体元件110的第二电极114，接着是水平半导体元件110的第一电极113、引线框架130的部分131、垂直半导体元件120的第一电极123、垂直半导体元件120的第二电极124,最后由引线框架130的部分134流出半导体部件100。而垂直半导体元件120的控制电极125则是控制垂直半导体元件120的第一电极123与垂直半导体元件120的第二电极124之间电荷流动的开关，其控制是对引线框架130的部分135以输入信号的方式调控。类似地，水平半导体元件110的控制电极115则是控制水平半导体元件110的第二电极114与水平半导体元件110的第一电极113之间电荷流动的开关，其控制是对引线框架130的部分133以输入信号的方式调控。在本发明的一实施方式中，引线框架130的部分134电连接于引线框架130的部分133。换言之，垂直半导体元件120的第二电极124电连接于水平半导体元件110的控制电极115。
在本发明的另一实施方式中，水平半导体元件110的第一电极113为漏极，水平半导体元件110的第二电极114为源极，而水平半导体元件110的控制电极115为栅极。垂直半导体元件120的第一电极123为源极，垂直半导体元件120的第二电极124为漏极，而垂直半导体元件120的控制电极125为栅极。据此，在半导体部件100内部的电流方向为：由引线框架130部分134进入，流向垂直半导体元件120的第二电极124，接着是垂直半导体元件120的第一电极123、引线框架130的部分131、水平半导体元件110的第一电极113、水平半导体元件110的第二电极114，最后由引线框架130的部分132流出。与前述类似的是，垂直半导体元件120的控制电极125是控制垂直半导体元件120的第二电极124与垂直半导体元件120的第一电极123之间电荷流动的开关，其控制是对引线框架130的部分135以输入信号的方式调控。而水平半导体元件110的控制电极115则为水平半导体元件110的第一电极113与水平半导体元件110的第二电极114之间电荷流动的开关，其控制是对引线框架130的部分133以输入信号的方式调控。
在本发明的一实施方式中，引线框架130的多个部分131、132、133、134以及135之中，至少有两个部分实质上共平面。如图1所示，引线框架130的所有部分131、132、133、134以及135均实质上共平面。因此，对于半导体部件100各部的信号的输入输出以及开关，均能由半导体部件100所接合的单一侧进行。然而，本发明并不限于此，在本发明的另一实施方式中，引线框架130的多个部分之中，至少有两个部分实质上非共平面。对于引线框架130的多个部分的位置，可视实际需要作对应的设计，可为共平面或非共平面。如图1所示，在本发明的一实施方式中，引线框架130的部分131(倒装焊于水平半导体元件110的第一电极113)、引线框架130的部分132(倒装焊于水平半导体元件110的第二电极114)、以及引线框架130的部分133(倒装焊于水平半导体元件110的控制电极115)，因为水平半导体元件110的第一电极113、水平半导体元件110的第二电极114以及水平半导体元件110的控制电极115均位于水平半导体元件110的第一侧111，所以部分131、部分132以及部分133三者位于共平面。至于分别位于不同水平高度而彼此具有电连接的两元件，例如引线框架130的部分134与垂直半导体元件120的第二电极124、引线框架130的部分135与垂直半导体元件120的控制电极125、以及引线框架130的部分131与垂直半导体元件120的第一电极123，则分别由不同焊接线192形成前述各元件两两之间的电连接。
然而，焊接线192并非是分别位于不同水平高度的两元件之间形成电连接的唯一方式。在本发明的一实施方式中，进一步包括同时接触水平半导体元件110的第一电极113与垂直半导体元件120的第一电极123的第一连接部160，使两者之间形成电连接。在本发明的另一实施方式中，进一步包括同时接触垂直半导体元件120的第二电极124与引线框架130的部分134的第二连接部180，使两者之间形成电连接。如图2所示，引线框架130的部分131与垂直半导体元件120的第一电极123两者之间的电连接、以及引线框架130的部分134与垂直半导体元件120的第二电极124两者之间的电连接，即分别由第一连接部160以及第二连接部180形成。在本发明的一实施方式中，第一连接部160包括金属夹、导电金属带或焊接线。在本发明的另一实施方式中，第二连接部180包括金属夹、导电金属带或焊接线。如图2所示，第一连接部160连接引线框架130的部分131与垂直半导体元件120的第一电极123两者的金属夹，据此，水平半导体元件110的第一电极113即和垂直半导体元件120的第一电极123形成电连接，从而水平半导体元件110与垂直半导体元件120两者即形成串联的电连接。
亦如图2所示，第二连接部180连接引线框架130的部分134与垂直半导体元件120的第二电极124两者的金属夹，据此，即可执行对于半导体部件200的信号的输出入。值得注意的是，因为金属夹具有较焊接线192更大的截面积，所以金属夹承载电流的能力亦较焊接线192优良许多。据此，如图2所示的半导体部件200与图1所示的半导体部件100相较，半导体部件200具有在更高电流下操作的能力。此外，具有较焊接线192更大截面积的金属夹尚能发挥帮助散热的特殊功效，使得半导体部件200在操作过程中产生的热能得以更充分地向外界散出。众所周知的是，任何元件若在操作过程中热量累积至过热时，元件即有损坏的疑虑。而元件在高电流运作下，特别容易造成操作过程中热量快速累积。据此，如图2所示的半导体部件200与图1所示的半导体部件100相较，具有在高操作电流下更优良的可靠度。在本发明的一实施方式中，金属夹包括镍(Ni)、铝(Al)、铜(Cu)、银(Ag)、金(Au)、以及该等金属的合金。
如图3所示，在本发明的一实施方式中，水平半导体元件110的控制电极115电连接于垂直半导体元件120的第一电极123。举例来说，水平半导体元件110的第一电极113以及控制电极115，两者均以倒装焊方式电连接于引线框架130的同一部分131。换句话说，水平半导体元件110的控制电极115并不需要被独立控制。因此，如图1和图2所示的引线框架130的部分133(对应水平半导体元件110的控制电极115)，可进一步被省略。在本发明的一实施方式中，水平半导体元件110的第一电极113为源极，水平半导体元件110的第二电极114为漏极，而水平半导体元件110的控制电极115为栅极；垂直半导体元件120的第一电极123为漏极，垂直半导体元件120的第二电极124为源极，而垂直半导体元件120的控制电极125为栅极。据此，在半导体部件300内部的电流方向为：由引线框架130的部分132进入，流向水平半导体元件110的第二电极114，接着是水平半导体元件110的第一电极113、引线框架130的部分131、垂直半导体元件120的第一电极123、垂直半导体元件120的第二电极124,最后由引线框架130的部分134流出半导体部件100。而垂直半导体元件120的控制电极125则是控制垂直半导体元件120的第一电极123与垂直半导体元件120的第二电极124之间电荷流动的开关，其控制室对引线框架130的部分135以输入信号的方式调控。然而，水平半导体元件110与垂直半导体元件120串联，即不需对水平半导体元件110独立控制。明确来说，当引线框架130的部分131接收到来自水平半导体元件110的第二电极114的电流信号时，电流信号接着会同时流向水平半导体元件110的第一电极113(源极)、以及水平半导体元件110的控制电极115(栅极)。因此，当垂直半导体元件120被打开，因为电流同时流入水平半导体元件110的控制电极115(栅极)和水平半导体元件110的第一电极113(源极)，水平半导体元件110将直接被开启。在此实施方式中，半导体部件300实质上仅具有一个控制电极125(位于垂直半导体元件120的第二侧122)，以控制彼此串联的水平半导体元件110和垂直半导体元件120。一般说来，垂直半导体元件120与水平半导体元件110相较之下，具有更快速开关切换的能力。在本发明的一实施方式中，水平半导体元件110具有的厚度大于垂直半导体元件120所具有的厚度。因此，垂直半导体元件120对于由其控制电极125(栅极)传来的驱动信号具有比水平半导体元件110更迅速的反应能力。据此，半导体部件300在信号传递和开关控制上，较前述的半导体部件100、200更为迅速简易。
在本发明的另一实施方式中，半导体部件300进一步包括150位于水平半导体元件110的第一侧111的钝化层。如图3所示，钝化层150配置于水平半导体元件110的第一侧111，以覆盖并保护水平半导体元件110的有源区域。有源区域包括第一电极113与第二电极114之间的电流通道。钝化层150覆盖水平半导体元件110的有源区域，使其避免与环境中空气和水气等接触，减少其产生变质损坏的机会，因此可有效延长水平半导体元件110的生命期(lifetime)。钝化层150可以包括氮化硅(SixNy)、二氧化硅(SiO2)以及三氧化二铝(Al2O3)。
如图3所示，在本发明的一实施方式中，钝化层150接触引线框架130的部分131，而引线框架130的部分131为与水平半导体元件110的第一电极113以及控制电极115均具有倒装焊之处。钝化层150可吸收水平半导体元件110的有源区域在操作时产生的热量，并进一步将热量往引线框架130的部分131散出。据此更能减轻热量累积的问题，并提高半导体部件300的可靠度。
参照图4，在本发明的另一实施方式中，钝化层150连接引线框架130的部分132，部分132为与水平半导体元件110的第二电极114倒装焊处。钝化层150更进一步发挥吸收由水平半导体元件110的有源区域所产生的热能并将热能往引线框架130的部分132散去的功效。同样地，减轻了半导体部件400所可能产生的热量累积，并据此进一步提高半导体部件400的可靠度。
参照图5所示，在本发明的另一实施方式中，半导体部件500进一步包括配置于水平半导体元件110的第二侧112的导体层170，其中垂直半导体元件120的第一电极123连接导体层170，且第一连接部160同时连接水平半导体元件110的第一电极113以及导体层170。换言之，第一连接部160并非直接连接垂直半导体元件120的第一电极123，而是直接连接导体层170，而导体层170再连接垂直半导体元件120的第一电极123。因此，垂直半导体元件120的第一电极123与水平半导体元件110的第一电极113之间具有电连接，如同前述各实施方式的半导体部件100、200、300以及400。
参照图6，在本发明的另一实施方式中，半导体部件600进一步包括连接垂直半导体元件120的控制电极125、以及引线框架130的部分135的第三连接部190。因此，垂直半导体元件120的控制电极125与其对应的引线框架130的部分135两者之间即具有电连接，如同前述各实施方式的半导体部件100、200、300、400以及500。
最后要强调的是，本发明所提供的电子元件封装体及其制造方法，使封装体内的导电路径能够更确实、成功率更高地被制作出来，同时具有更高的可靠度以及更大的工艺容许度，不须复杂的工艺步骤，更能降低电子元件封装体的制造成本。同时尚可针对不同电子元件设计需求，对应不同的线路布局，使线路布局设计更具弹性。
虽然本发明已以实施方式公开如上，然其并非用以限定本发明，任何本领域内的技术人员，在不脱离本发明的精神和范围内，当可作各种的更动与润饰，因此本发明的保护范围当视所附的权利要求书所界定的为准。

Claims (17)

1.一种半导体部件，包括：
水平半导体元件，具有第一侧以及第二侧，该水平半导体元件包括位于该第一侧的有源区域，该有源区域包括第一电极、第二电极以及控制电极；
垂直半导体元件，具有第一侧以及第二侧，该垂直半导体元件包括位于该第一侧的第一电极、以及位于该第二侧的第二电极和控制电极；以及
引线框架，分别电连接该水平半导体元件的该第一电极、该水平半导体元件的该第二电极、该垂直半导体元件的该第二电极、以及该水平半导体元件和该垂直半导体元件各自的该控制电极，
其中，该引线框架与该水平半导体元件的该第一电极及该第二电极电性连接的一侧呈平面，该水平半导体元件和垂直半导体元件均为片状结构，该垂直半导体元件与该引线框架并非直接接触，该垂直半导体元件的该第一侧配置于该水平半导体元件的该第二侧，且该水平半导体元件的该第一电极亦与该垂直半导体元件的该第一电极电连接；
其中，半导体部件进一步包括第一连接部和导体层，该导体层位于该水平半导体元件的该第二侧，该垂直半导体元件的该第一电极连接该导体层，该第一连接部电连接该水平半导体元件的该第一电极以及该导体层，使得该水平半导体元件的该第一电极以及该垂直半导体元件的该第一电极电连接，其中该第一连接部并非直接连接垂直半导体元件的第一电极。
2.如权利要求1的半导体部件，其中该水平半导体元件的该第一侧面向该引线框架。
3.如权利要求1的半导体部件，其中该水平半导体元件的该控制电极与该垂直半导体元件的该第一电极电连接。
4.如权利要求3的半导体部件，进一步包括设置于该水平半导体元件的该第一侧的钝化层。
5.如权利要求1的半导体部件，其中该引线框架包括多个部分。
6.如权利要求5的半导体部件，其中该些部分的至少二个部分共平面。
7.如权利要求5的半导体部件，其中该些部分的至少二个部分非共平面。
8.如权利要求1的半导体部件，其中该第一连接部包括金属夹、导电金属带或焊接线。
9.如权利要求1的半导体部件，进一步包括同时连接该水平半导体元件的该第二电极以及该引线框架的第二连接部。
10.如权利要求9的半导体部件，其中该第二连接部包括金属夹、导电金属带或焊接线。
11.如权利要求1的半导体部件，进一步包括同时连接该垂直半导体元件的该控制电极以及该引线框架的第三连接部。
12.如权利要求11的半导体部件，其中该第三连接部包括金属夹、导电金属带或焊接线。
13.如权利要求1的半导体部件，其中该水平半导体元件包括金属-绝缘体-半导体场效应晶体管(MISFET)、金属半导体场效应晶体管(MESFET)、或高电子迁移率晶体管(HEMT)。
14.如权利要求1的半导体部件，其中该水平半导体元件包括氮化物基功率晶体管。
15.如权利要求1的半导体部件，其中该水平半导体元件的该第一电极为源极，该水平半导体元件的该第二电极为漏极，该垂直半导体元件的该第一电极为漏极，该垂直半导体元件的该第二电极为源极，而该水平、垂直半导体元件的该些控制电极均为栅极。
16.如权利要求1的半导体部件，其中该水平半导体元件的厚度大于该垂直半导体元件的厚度。
17.如权利要求1的半导体部件，其中该水平半导体元件的该控制电极与该垂直半导体元件的该第二电极电连接。
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