TW201350248A - 雷射輔助轉移焊接法 - Google Patents

雷射輔助轉移焊接法 Download PDF

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Publication number
TW201350248A
TW201350248A TW102102122A TW102102122A TW201350248A TW 201350248 A TW201350248 A TW 201350248A TW 102102122 A TW102102122 A TW 102102122A TW 102102122 A TW102102122 A TW 102102122A TW 201350248 A TW201350248 A TW 201350248A
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Taiwan
Prior art keywords
punch
transferable
eutectic
component
target substrate
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TW102102122A
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English (en)
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TWI611858B (zh
Inventor
Etienne Menard
Matthew Meitl
John A Rogers
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Semprius Inc
Univ Illinois
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Publication of TW201350248A publication Critical patent/TW201350248A/zh
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Publication of TWI611858B publication Critical patent/TWI611858B/zh

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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1259—Multistep manufacturing methods
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Abstract

本發明提供一種印刷可轉移組件之方法，其包括在目標基材上按壓其上包括至少一個可轉移半導體組件之衝頭，使得該至少一個可轉移組件及該目標基材之一表面與傳導性共晶層之相對表面接觸。在該目標基材上按壓該衝頭期間，將該至少一個可轉移組件暴露於透過該轉移衝頭引導之電磁輻射以重熔該共晶層。接著從該目標基材分離該衝頭以從該衝頭脫離該至少一個可轉移組件及將該至少一個可轉移組件印刷於該目標基材之表面上。本發明亦論述相關系統及方法。

Description

雷射輔助轉移焊接法
本發明屬於晶圓片半導體處理及封裝溶液的一般領域。更具體言之，本發明係關於一種從源晶圓釋放及接著選擇性地結合至目標基材上之超薄晶粒陣列的並行裝配件。
轉移印刷法一般依賴使用轉移衝頭之黏附之動力或剪切輔助控制以將超薄半導體晶粒之陣列轉移至目標基材上，其一般塗佈有聚合物黏合劑層。當目標基材之表面相對光滑時，正如拋光半導體晶圓或超平玻璃基材，可在無黏合劑層下達成高轉移印刷產率。然而，當目標基材之粗糙度過高而不允許高轉移產率，或過高而不能形成可靠之化學結合之界面時，可使用聚合物黏合劑層。
然而，聚合物黏合劑層之典型低熱傳輸及高熱膨脹係數性質可限制某些類別之半導體轉移可印刷裝置(諸如太陽能電池、發光二極體、雷射二極體、電晶體及/或積體電路)的性能或長期可靠性。此 外，聚合物黏合劑層之電絕緣性可不容許在結合界面處形成電接點。因此，一般需要其他處理步驟以在轉移印刷之半導體晶粒之表面上方沉積及圖案化金屬互連線。該等其他處理步驟可要求特殊的工程設計、特殊的材料邏輯及其他製造裝置、嚴格的品質控制及/或其他成本。
本發明之實施例提供用於轉移焊接半導體晶粒的方法及系統。特定言之，本發明之實施例應用轉移印刷技術以利用轉移衝頭從源晶圓釋放超薄半導體晶粒之陣列，及應用金屬共晶層以將彼等超薄晶粒黏附至目標基材之表面上。一旦利用超薄半導體晶粒之陣列填充，使轉移衝頭與目標基材之表面對準及接觸。圖案化之電磁輻射(諸如高能雷射束)係透過轉移衝頭之透明部分聚焦在各半導體晶粒上，從而選擇性地重熔共晶層及將半導體晶粒結合至目標基材之頂表面上。
因此，本發明提供一種用於將超薄半導體晶粒(諸如太陽能電池、LED、LASER、積體電路及高能電晶體)熱結合及互連至剛性或可撓性基材之表面上的溶液。一些實施例允許電互連具有多個電末端之電子裝置。一些實施例亦提供用於利用能夠填充微米大小孔隙之自平坦化共晶層將超薄半導體晶粒轉移至粗糙基材(諸如未拋光陶瓷基材、未拋光多晶矽基材、未拋光金屬基材、印刷電路板及/或塑料基材)上的溶液。
根據本發明之一些實施例，一種印刷可轉移組件之方法包括於目標基材上按壓其上包括至少一個可轉移半導體組件之衝頭，使得該至少一個可轉移組件及該目標基材之一表面與傳導性共晶層之相對表面接觸。在該目標基材上按壓該衝頭期間，將該至少一個可轉移組件暴露於透過該轉移衝頭引導之電磁輻射以重熔該共晶層。然後，從該目標基材分離該衝頭以從該衝頭脫離該至少一個可轉移組件及將該至 少一個可轉移組件印刷至該目標基材之表面上。
在一些實施例中，該衝頭可包括在平面圖中至少部分與該至少一個可轉移組件對準之透明部分，及該至少一個可轉移組件可透過該衝頭之透明部分暴露於該電磁輻射。
在一些實施例中，該電磁輻射可為由光源提供之雷射輻射。例如，雷射輻射可加熱該至少一個可轉移組件，及該至少一個可轉移組件可在其表面上側向散佈熱以重熔該共晶層。在其他實施例中，該至少一個可轉移半導體組件之能隙對雷射輻射之波長可為透明的，及該雷射輻射可直接加熱該共晶層以重熔該共晶層。
在一些實施例中，該目標基材之表面可為粗糙表面，及該共晶層在其重熔之後可提供與該至少一個可轉移組件之實質上平面的界面。例如，該目標基材可為未拋光陶瓷基材、未拋光多晶矽基材、未拋光金屬基材、印刷電路板及/或塑料基材。
在一些實施例中，該至少一個可轉移半導體組件可為位於該衝頭上之複數個可轉移半導體組件。該複數個可轉移組件其中一些可透過該衝頭選擇性地暴露於圖案化之電磁輻射以重熔與其接觸之共晶層的部分而不重熔該共晶層之其他部分，及可從該目標基材分離該衝頭以從該衝頭選擇性地脫離該複數個可轉移組件其中一些，而不脫離該複數個可轉移組件之剩餘部分。
在一些實施例中，該複數個可轉移組件可界定可轉移組件之連續陣列。在利用目標基材按壓衝頭之前，該衝頭可與其上包括該可轉移組件之陣列的源基材接觸，及可從該源基材縮回該衝頭以將該可轉移組件之陣列轉移到該衝頭。從該衝頭脫離之該複數個可轉移組件其中一些可為該陣列之子集。
在一些實施例中，該共晶層可為包括至少兩個不同層之多層堆疊。
在一些實施例中，該共晶層可包括鄰近該至少一個可轉移組件之邊緣部分的第一共晶堆疊，及介於邊緣部分之間之第二共晶堆疊。該等至少一個可轉移組件之邊緣部分可選擇性地暴露於圖案化之電磁輻射以重熔該第一共晶堆疊而不重熔該第二共晶堆疊。
在一些實施例中，該第一共晶堆疊可為具有比該第二共晶堆疊更高之熔化溫度的材料。該目標基材可在足以選擇性地重熔該第二共晶堆疊而不重熔該第一共晶堆疊的溫度下加熱。該第二共晶堆疊可提供與該至少一個可轉移組件之歐姆接點。
在一些實施例中，該第一共晶堆疊可包括金屬合金，及該第二共晶堆疊可包括金屬-半導體合金。
在一些實施例中，該至少一個可轉移組件可包括第一多接面太陽能電池，其在堆疊具有比該第一多接面太陽能電池更低之能隙之第二多接面太陽能電池上，及介於該第一與該第二太陽能電池之間之界面可包括共晶材料。
在一些實施例中，該界面可進一步包括由該第二多接面太陽能電池中之凹陷突出之至少一個金屬指狀物，及該至少一個金屬指狀物可包括位於其上之共晶材料。
在一些實施例中，沿介於該第一與第二多接面太陽能電池之間之界面可提供固有摻雜層或P-N二極體結構，及在與第二太陽能電池相對之固有摻雜層或P-N二極體結構上，可提供經摻雜之側向電流散佈層。
在一些實施例中，印刷在該目標基材上之該至少一個可轉移組件可識別為有缺陷的，及回應識別出該至少一個可轉移組件為有缺陷的，可使該衝頭與該至少一個可轉移組件接觸。該至少一個可轉移組件可暴露於透過衝頭引導之第二圖案化之電磁輻射以重熔該共晶層，及然後，從該目標基材縮回其上包括該至少一個可轉移組件之該衝 頭，同時重熔該共晶層以從該目標基材脫離該至少一個可轉移組件。
在一些實施例中，該共晶層可在該至少一個可轉移組件與目標基材上之金屬互連線之間提供電連接。
在一些實施例中，該至少一個可轉移組件可包括一或多個由其表面突出之金屬指狀物層，及該共晶層可位於該等金屬指狀物層之上。
在一些實施例中，圖案化目標基材上之金屬層可經圖案化以界定該金屬互連線及局部對準標記，及在該目標基材上按壓該衝頭之前，使該衝頭與該目標基材上之局部對準標記對準。
在一些實施例中，該至少一個可轉移組件可為太陽能電池、發光二極體、雷射二極體或電晶體。
根據本發明之其他實施例，一種用於製造可印刷組件之陣列的系統包括具有位於其轉移表面上之至少一個可印刷半導體組件的衝頭、包括其上安裝之該衝頭之轉移印刷工具頭，及與該轉移印刷工具頭耦合之控制器。該控制器經組態以操作該轉移印刷工具頭從而在該目標基材上按壓該衝頭，以使該至少一個可印刷組件接觸該目標基材之表面，其中該至少一個可印刷組件及/或該目標基材之表面包括位於其上之傳導性共晶層。電磁輻射源經組態以當在該目標基材上按壓該衝頭時將該至少一個可印刷組件暴露於透過該轉移衝頭引導之電磁輻射以重熔該共晶層。該控制器經組態以操作該轉移印刷工具頭以在重熔共晶層之後從該目標基材分離該衝頭，從而從該衝頭脫離該至少一個可印刷組件及將該至少一個可印刷組件轉移至該目標基材之表面上。
進一步言之，轉移衝頭用於從源晶圓之表面拾取超薄半導體晶粒之連續或分散陣列。在目標基材之表面上沉積共晶層及在一些實施例中圖案化。然後，將該轉移衝頭層壓於該目標基材上，將該半導體 晶粒之陣列與該共晶層之表面緊密接觸。接著利用高能電磁輻射(其可藉由聚焦雷射束提供)暫時加熱各半導體晶粒，使得與半導體晶粒直接實體接觸之共晶層熔化。
在本發明之一些實施例中，將共晶層沉積在目標基材之表面上。在本發明之其他實施例中，將共晶層沉積在源晶圓上之晶粒之頂表面上。在本發明之其他實施例中，利用技術中已知的標準微處理圖案化技術(諸如微影術圖案化技術及回蝕或金屬剝離處理)，將共晶層圖案化至多個結合線/焊墊內。
在其他實施例中，選擇及/或優化共晶層之組成以在半導體晶粒之背表面形成歐姆接點。在本發明之其他實施例中，共晶層在半導體晶粒之一或多個電極與在該目標基材之表面上界定之一或多個互連焊墊之間形成低電阻歐姆接點。
本發明之各種實施例可具有通用元件及可為應用轉移印刷以利用轉移衝頭從源晶圓釋放超薄半導體晶粒之陣列，及應用金屬共晶層以對準及將彼等超薄晶粒黏附於目標基材之表面上之方法的變型。在特定實施例中，高能雷射束係透過轉移衝頭之透明部分聚焦於各半導體晶粒上，以選擇性地重熔共晶層及將半導體晶粒結合至目標基材之頂表面上。
共晶層允許改良熱自半導體晶粒至目標基材之散逸。在本發明之一些實施例中，共晶層經沉積及圖案化成凹陷特徵，從而允許形成高光學品質之半導體至半導體結合界面。本發明之該等實施例能異質整合在各自的外延基材上生長之晶格不匹配的高能隙及低能隙太陽能電池。在本發明之其他實施例中，可選擇及/或優化共晶堆疊之組成以能進行多個重熔步驟，從而允許選擇性地除去及替代缺陷晶粒。
熟習此項技術者鑑於下列圖式及詳細敘述可明瞭根據一些實施例之其他方法及/或裝置。除了以上實施例之任何及所有組合之外， 所有該等其他實施例欲併入該敘述中，位於本發明之範圍內及藉由附加申請專利範圍所保護。
4‧‧‧高能雷射束
10‧‧‧衝頭
11‧‧‧柱
20‧‧‧半導體晶粒/低能隙外延生長之半導體層/低能隙太陽能電池
22‧‧‧電末端
22b‧‧‧集流金屬柵極指狀物
22c‧‧‧共晶堆疊
23‧‧‧空腔
25‧‧‧基材
26‧‧‧易斷裂拴繫構件
30‧‧‧目標基材
31‧‧‧共晶堆疊
31a‧‧‧覆蓋層
31b‧‧‧共晶層
31c‧‧‧共晶層
31d‧‧‧擴散障壁層
32‧‧‧第二共晶堆疊
32b‧‧‧合金化歐姆接點
33‧‧‧導電金屬層
40‧‧‧高能隙電池
41‧‧‧固有摻雜層或P-N二極體結構
42‧‧‧側向電流散佈層
42a‧‧‧底部或下面接點
42b‧‧‧柵極指狀物
50‧‧‧臨時載體基材
51‧‧‧聚矽氧黏合劑層
53‧‧‧電阻薄膜金屬加熱器元件
62‧‧‧互聯線
63‧‧‧局部對準標記
圖1a-c示出根據本發明之一些實施例之轉移焊接法之示意圖。
圖2a-c示出根據本發明之一些實施例的實驗結果。該等結果證實在由三接面太陽能電池組成之半導體晶粒的情形下本發明之實施例的有效性。
圖3示出圖2a-c所示之結合之三接面太陽能電池在聚焦光下之電流電壓特性。
圖4a-b地說明根據本發明之一些實施例，當共晶層在低壓縮力下重熔時將超薄半導體晶粒轉移焊接至粗糙目標基材上之方法。
圖5說明根據本發明之一些實施例之多層共晶堆疊，其在金屬互連線之頂部上沉積及圖案化以能夠形成與半導體晶粒之背側的電連接。
圖6a-c示出根據本發明之其他實施例之依賴使用兩個共晶堆疊的轉移焊接法。
圖7a-b示出能夠於低能隙多接面太陽能電池之上異質整合高能隙多接面太陽能電池(彼等在各自的源基材上生長)之本發明的實例實施例。
圖8a-b示出應用於可包含積體電路、光電或能量/高頻裝置之多末端半導體晶粒的本發明的實例實施例。
圖9a-c示出根據本發明之實施例之雙重轉移處理，其中首先將半導體晶粒轉移至臨時載體基材上。
圖10及11示出根據本發明之實施例之轉移處理順序的示意圖，其可用於在較大面積之剛性或塑料基材上互連超薄多末端裝置之陣列。
圖12a-b說明本發明之轉移順序，其允許經由減少工具頭移動距 離顯著改進於大面積基材上之工具通量。
現參考附圖，將在後文中更全面地敘述本發明，其中示出本發明之實施例。然而，本發明不應視為受限於文中闡明之實施例。相反，提供該等實施例以使該揭示案詳盡且完整，及將為熟習此項技術者全面地表達本發明的範圍。在圖式中，出於明晰之目的而放大層及區域的厚度。在全文中相同的數字表示相同的元件。
應理解，當元件(諸如組件、層、區域或基材)表示為位於另一元件「上面」或延伸「至其上面」或「與其接觸」時，其可直接位於該其他元件「上面」或直接延伸「至其上面」或直接「與其接觸」，或亦可存在插入元件。相比之下，當元件表示為「直接位於另一元件上面」或「直接延伸至其上面」或「直接與其接觸」時，則不存在插入元件。亦應理解，當元件表示為「接觸」或「連接至」或「耦合至」另一元件時，其可直接接觸或連接至或耦合至該其他元件，或可存在插入元件。相比之下，當元件表示為「直接接觸」或「直接連接至」或「直接耦合至」另一元件時，則不存在插入元件。
亦應理解，儘管術語第一、第二等可在此用於敘述多種元件，但是該等元件不應受限於該等術語。該等術語僅用於將一個元件與另一個作區分。例如，在不脫離本發明之範圍下，第一元件亦可稱為第二元件，及類似地，第二元件可稱為第一元件。
而且，如在圖式中說明，相對術語，諸如「下面」或「底部」及「上面」或「頂部」可在此用於敘述一個元件與另一個元件的關係。應理解，除了圖式所描繪的取向以外，相對術語欲涵蓋裝置之不同取向。例如，若翻轉一個圖式中之裝置，則敘述為位於其他元件之「下面」的元件將於其他元件之「上面」取向。因此，取決於圖式之特定取向，示例性術語「下面」可涵蓋「下面」及「上面」之取向。 類似地，若翻轉一個圖式中之裝置，則敘述為位於其他元件之「下方」或「以下」的元件將於其他元件之「上方」取向。因此，示例性術語「下方」或「以下」可涵蓋上方及下方之取向。
本發明之敘述中所用之術語在此僅出於敘述特定實施例之目的及不欲限制本發明。如在本發明之敘述及附加申請專利範圍中所用，除非文中另有明確表明，否則單數形式「一」及「該」亦欲包括複數形式。亦應理解，文中所用之術語「及/或」表示及涵蓋一或多個相關列出項之任何及所有可能的組合。應進一步理解，當在該說明書中使用時，術語「包括」明確說明闡明之特徵、整數、步驟、操作、元件及/或組件之存在，但不排除存在或增加一或多種其他特徵、整數、步驟、操作、元件、組件及/或其組群。
參考作為示意性說明本發明之理想化實施例(及中間構件)之橫斷面圖，在此敘述本發明之實施例。如此，亦預期因例如製造技術及/或誤差引起之圖式形狀之變化。因此，本發明之實施例不應視為限於文中說明之區域之特定性狀，而是包括因例如製造引起之形狀之偏差。換言之，圖式中說明之區域實質上為示意性及其形狀不欲說明裝置之區域的實際形狀及不欲限制本發明之範圍。
除非另有定義，否則包括技術及科學術語之本發明之揭示實施例中使用之所有術語具有本發明所屬之技術的一般人員通常理解的相同含義，且不必限於在敘述本發明時所知曉的具體定義。因此，該等術語可包括該時間之後所出現的相當術語。應進一步理解，術語(諸如在通用詞典中定義之彼等)應理解為具有與本說明書中及相關技術之文中之其含義一致的含義及除非文中明確定義，否則不應以理想化或過於正式的意義理解。文中提及之所有公開案、專利申請案、專利及其他參考係以引用之方式全文併入本文。
現參考圖式，圖1a-c示出根據本發明之一些實施例之轉移焊接法 之示意圖。文中所用之術語「焊接」或「轉移焊接」一般可表示將可轉移組件與另一組件、層或基材接合。特定言之，在圖1a中，轉移衝頭10用於選擇性地拾取主動可轉移電子組件之陣列(以超薄半導體晶粒20說明)至由該衝頭10之表面突出之凸柱特徵11之各自表面上。該轉移衝頭10可安裝至轉移印刷工具頭，及控制器可耦合至該轉移印刷工具頭以控制文中所述之一或多種操作。將單層或多層導電共晶材料(以共晶堆疊31說明)沉積於目的基材或目標基材30之表面上。在圖1b中，將該轉移衝頭10層壓於目標基材30上，使得半導體晶粒20之陣列與共晶堆疊31之表面接觸。利用藉由光源提供之電磁輻射(以高能雷射束4說明)暫時加熱各半導體晶粒20，使得與半導體晶粒實體接觸之一或多個共晶層31熔化。如文中所用，電磁輻射4係以足以重熔共晶層31之強度及持續時間提供，及包括具有任何頻率之電磁輻射，諸如由紅外線雷射、紫外線雷射等提供之彼等，及因此不限於可見光。衝頭10(及由其突出之一或多個柱特徵11)可包括雷射光4可透射穿過之一或多個透明層或部分。在平面圖中，衝頭10之透明部分可與晶粒20對準。在該實施例中，各半導體晶粒20本身可用作側向熱散佈物。若雷射束強度分佈非完全均一，則熱側向散佈進入半導體晶粒可用作一種改進轉移至共晶層31之熱通量之均一性的有效方法。在其他實施例中，可選擇比半導體能隙更長的雷射波長。在該實施例中，半導體晶粒20對雷射束4為透明的，及因此，可藉由雷射束4直接加熱共晶堆疊31。
如圖1b所示，在雷射焊接處理過程期間，可對轉移衝頭10之背部(例如與柱11突出之表面相對的衝頭10之表面)施加外壓。該外壓係藉由衝頭10轉移至半導體晶粒20，其可改進當液體共晶堆疊31流動及濕潤半導體晶粒20之背部表面時晶粒20與共晶層31之間的最終結合界面的品質。在圖1c中，在半導體晶粒20與目標基材30結合之後，衝頭 10從目標基材30脫離以將晶粒20沉積或「印刷」於目標基材30上。
圖2a-c示出根據本發明之一些實施例達成的實驗結果。該等實驗結果證實在半導體晶粒包括三接面太陽能電池之情形下所述之一些實施例的有效性。特定言之，聚光型太陽能電池係利用銦-金基共晶堆疊而雷射轉移焊接至經煅燒(即粗糙)陶瓷基材的表面上。將藉由纖維耦合之808 nm固態二極體雷射所提供之束精確地對準及聚焦在三接面太陽能電池之表面上以重熔共晶堆疊。雷射束點之直徑略小於太陽能電池之主動區域(650 x 650 um)。在該組態中，雷射束光被太陽能電池吸收，其因而充當熱散佈物以間接地轉移熱及熔化銦/金共晶堆疊。轉移衝頭包括相對玻璃背襯元件模製之透明聚矽氧(聚二甲基矽氧烷(PDMS))層。共晶堆疊包括四次交替100 nm厚之銦及5 nm厚之金層之多層堆疊。藉由熱蒸發，重複四次沉積共晶堆疊層。因此，共晶堆疊之總厚度為約420 nm。在7A之雷射偏流下之500 ms長雷射脈衝足以成功熔化共晶層及將太陽能電池結合至陶瓷基材。
圖2a及2b分別示出在除去太陽能電池光阻層封裝層之前(圖2a)及之後(圖2b)，雷射焊接至未拋光陶瓷基材之表面上的三接面電池的高分辨率光學影像。圖2c示出使用InGaAs相機拍攝之介於太陽能電池與共晶堆疊之間之結合界面的高分辨率近紅外線光學影像。該檢查相機為一種視覺上檢查及評估結合界面之品質的有效方法。該影像中可見之微米大小的孔隙是因為煅燒之陶瓷基材之高表面粗糙度所引起。在該實驗中，共晶層之總厚度(420 nm)低於該基材之峰穀粗糙度(~1,200 nm)。轉移焊接之太陽能電池通過標準(Scotch®)膠帶剝離測試，符合結合界面之較佳機械強度。
圖3示出圖2a-c所示之結合三接面太陽能電池在聚焦光下之電流電壓特性。該等電學測試結果證實雷射焊接處理不會顯著不利地影響轉移太陽能電池之性能。
圖4a-b示意性地說明根據本發明之實施例之導電共晶層於轉移焊接中之用途。特定言之，如圖4a所示，在與一半導體晶粒20接觸之前，將共晶層31沉積在目標基材30之粗糙表面上。可在低壓縮力(<10 PSI)下重熔該共晶層31以提供晶粒20結合之實質上平坦的表面。更特定言之，如圖4b所示，熔化之共晶層平坦化目標基材之粗糙表面及緊貼半導體晶粒20之背部表面。
圖5示意性地說明在金屬互連線33上沉積及圖案化以能夠形成至半導體晶粒20之背側的電連接的多層共晶堆疊31。該多層共晶堆疊31包括覆蓋層31a、共晶層31b-c、及擴散障壁層31d。可選擇及/或優化覆蓋層31a、共晶層31b-c、及擴散障壁層31d之組成及/或厚度以在重熔時能夠形成低電阻金屬-半導體歐姆接點。在一些實施例中，可在惰性或還原氣體環境中進行文中所述之雷射焊接處理以預防氧化作用。
圖6a-c示出根據其他實施例之轉移焊接處理，其依賴使用兩種具有不同組成之共晶堆疊。如圖6a-c所示，較低溫度之第一共晶堆疊31經圖案化或以其他方式經組態以結合至半導體晶粒20之邊緣部分，及較高溫度之第二共晶堆疊32經圖案化或以其他方式經組態以結合至半導體晶粒20之底部表面。該第一共晶堆疊31可由一或多個共晶層形成，重熔之後，其可轉換成具有比第二共晶堆疊32之形成溫度更高的熔化溫度的合金。例如，在一些實施例中，第一共晶堆疊31可包括一或多種金屬及/或其合金，而第二共晶堆疊32可包括半導體、金屬及/或其合金。如此，文中所述之雷射轉移焊接處理可用於選擇性地重熔第一共晶堆疊31而不重熔第二共晶堆疊32。特定言之，可調節聚焦雷射束以在第一共晶堆疊31之大約形成溫度下選擇性地熔化該第一金屬共晶堆疊31。在完成轉移焊接處理之後，可在第二半導體-金屬共晶堆疊32之大約形成溫度下於重熔爐內均一地加熱整個目標基材30，以在半導體晶粒20之底部表面處形成合金化歐姆接點32b。
在一些實施例中，可選擇金屬共晶堆疊31之組成以具有比半導體金屬共晶堆疊32之形成溫度更低的形成溫度，及形成之金屬共晶合金31之熔化溫度可高於半導體金屬共晶堆疊32之形成溫度。例如，該第一共晶堆疊31可包括In-Au金屬合金，而該第二共晶堆疊32可包括Au-Ge合金，其一般用於形成與GaAs半導體之歐姆接點。在該特定情形下，可在低至約157℃之溫度下引發第一共晶堆疊31之In-Au合金的形成，及具有28至78%範圍內(按重量計算)之銦重量%組成之形成的In-Au合金的熔化溫度高於約454℃。由於該等In-Au合金之熔化溫度高於由GaAs半導體上之第二共晶堆疊32所提供之Au-Ge(356℃共晶)接點的退火溫度，該第一共晶堆疊31之形成的In-Au合金在約360至450℃之範圍內之溫度(例如足以重熔第二共晶堆疊32之溫度)下的第二次重熔期間保持固態(例如，不重熔)。可在真空下進行該第二次重熔處理以減少在金屬-半導體界面處補集氣穴的可能性。可選擇及/或優化第二金屬共晶層32之組成及/或半導體材料之摻雜物從而允許利用標準操作形成低電阻歐姆電接點。
圖7a-b示出能夠在低能隙多接面太陽能電池(諸如InGaAsP/InGaAs 20)之上異質整合高能隙多接面太陽能電池(諸如InGaP/GaAs 40)的本發明實施例，亦在文中稱為雙層或疊層太陽能電池結構。高能隙及低能隙多接面太陽能電池可生長於各自的源基材上。在該實施例中，可將一共晶堆疊22c及集流金屬柵極指狀物22b沉積及圖案化於蝕刻入低能隙外延生長之半導體層20之空腔23內。在一些實施例中，選擇及/或優化金屬柵極指狀物之側向尺寸及間距/定位以在電池結構暴露於太陽能輻射時降低屏蔽損耗或將其降至最小。選擇及/或優化柵極金屬及共晶堆疊之總厚度以允許在完成雷射焊接處理之後高能隙太陽能電池40之背側或下表面與低能隙太陽能電池20之頂部或上表面之間的直接接觸。
在後續步驟中，可進一步將結構退火以引發形成兩個太陽能電池40與20之間的化學鍵(諸如氫鍵)。在該等實施例中，可在低溫下形成介於太陽能電池40與20之間之高光學品質(低屏蔽損耗)及高熱性能(直接半導體至半導體接觸)的界面，其允許製造超高性能異質整合之多接面太陽能電池。InGaP/GaAs疊層太陽能電池40與InGaAsP/InGaAs疊層太陽能電池20之異質整合可能夠製造能夠在高光學聚光比下達成大於約45%轉換效率的堆疊太陽能電池結構。
例如，文獻「Directed semiconductor bonding technology(SBT)for high efficiency III-V multi-junction solar cells」，Bhusari D.等人，IEEE PVSC 2011中報告之一般弱電阻(0.3 Ω.cm2)之晶圓結合堆疊之4 J或5 J太陽能電池結構不容許在高聚光比(即>500 suns)下有效地操作該等電池。在該文獻中，低及高能隙太陽能電池生長於各自的基材上，因此減少或消除上前方單片生長法中一般遇到之晶格匹配生長約束。
相比該等晶圓結合處理，文中揭示之共晶結合之結構不要求結合之半導體表面以低至亞奈米水平平坦化以達成高結合產率。可選擇及/或優化金屬柵極指狀物22b、共晶堆疊22c及蝕刻空腔23之厚度、幾何形狀及/或深度以使得結合處理耐表面粗糙度，其可存在於生長態之低能隙太陽能電池20之頂表面上。與一些其他晶圓結合處理不同，文中揭示之共晶結合之結構不要求頂部電池反向生長。
由於可獨立地提取藉由疊層電池之頂部高能隙電池40所產生之電流及因此不必與藉由疊層電池之底部低能隙電池20所產生之電流匹配，故文中揭示之雙層或疊層4末端太陽能電池結構亦可提供優於晶圓結合之結構之其他性能優勢。該等共晶結合之結構因而可至少部分減輕一般在串聯單片太陽能電池中遇到之電流匹配約束。
在InP基低能隙太陽能電池的情形下，疊層電池可從更高成本之 InP生長基材釋放及轉移焊接至更低成本之目標基材30之表面上，從而允許再次利用該更高成本之InP生長基材。針對在GaAs基材上生長之InGaP/GaAs疊層太陽能電池的情形，已經證明該晶圓再次利用法。在一些實施例中，低能隙電池20可轉移焊接至導電金屬層33之表面上從而能夠形成低電阻(歐姆)背部-側面接點。
為了在高能隙電池40之底部或下面接點42a與低能隙電池20之頂部或上面接點22b之間提供電絕緣性，可在高能隙電池40之底部，即沿高能隙電池40與低能隙電池20之間的界面併入固有摻雜層或P-N二極體結構41。在該情形下，可在高能隙太陽能電池epi設計40之底部併入高度摻雜之側向電流散佈層42(例如，其中層41位於電流散佈層42與低能隙電池20之間)，從而減少串聯阻力或將其降至最低及因此允許在高聚光比下之高性能。為減少屏蔽損耗或將其降至最低，頂部高能隙電池40之柵極指狀物42b可經設計而與底部低能隙電池20之金屬柵極指狀物22b精確地對準(在平面圖中)。此外，為了進一步改進裝置性能，文中揭示之整合法可用於將三接面高能隙太陽能電池(諸如AlGaInP/InGaP/Ga(In)As)異質整合在低能隙疊層或三接面低能隙電池上，其可生長於InP或GaSb基材上。文中揭示之整合法亦可應用於將高能隙太陽能電池異質整合於非晶格匹配之(即，變質)太陽能電池上，其可生長於標準Ge或GaAs基材上。
圖8a-b示出應用於多末端超薄半導體晶粒20之情形之根據本發明之實施例的轉移焊接處理的實例。該多末端晶粒20可包括積體電路、光電子或能量/高頻裝置。該晶粒20可包括一或多個電學元件(諸如電晶體、電容器、電阻器及/或電線)及/或電光元件(諸如光感測器及/或發光二極體)，以及位於該晶粒20之表面上之電末端22，其可提供與該等元件之電連接。在該等實施例中，超薄半導體晶粒20可以上下顛倒示出，即電末端22朝向衝頭之下方或與之相對。在該等實施例中， 在半導體晶粒20之末端22之表面上沉積及圖案化共晶堆疊31，及包括從中突出之柱11上之晶粒20的衝頭朝目標基材30移動，使得末端22及其上之共晶層31與目標基材30上之傳導性金屬微量層33接觸。一經暴露於電磁輻射(例如聚焦雷射束)，共晶堆疊31之重熔能夠在半導體晶粒20與目標基材30之表面上界定之傳導性金屬微量層33之間形成電接點陣列。在完成雷射焊接處理之後，縮回衝頭及可在無進一步處理下電測試轉移之晶粒20。
若檢測到缺陷晶粒，利用反順序雷射脫焊(再加工)法可從陣列中選擇性地除去該等晶粒。特定言之，衝頭之單一柱可與缺陷晶粒接觸，可藉由暴露於電磁輻射(例如高能雷射脈衝)而重熔共晶層，及當共晶層熔化時，抬起衝頭以擷取缺陷晶粒。在後續步驟中，可再次焊接新晶粒以替代缺陷晶粒。可選擇或優化金屬共晶堆疊之組成，以允許在適度重熔溫度範圍下進行多個再加工處理。例如，針對具有70至82%範圍內之金重量%比例之Au-Sn共晶組合物，由於形成之Au-Sn合金的再次熔化溫度保持低於400℃，則可在In-Au共晶層上方使用Au-Sn基共晶層。該再次加工處理可用於諸如要求半導體晶粒之極大陣列(即數千)以近100%功能電產率下互連至背板上之顯示器或數字X射線偵測器之應用中。相比其他金屬邊緣上互連法，其中一些要求更具破壞性(即涉及介電層及/或金屬層之除去及再次沉積)的再加工程序，文中揭示之轉移焊接整合法之再加工性能提供顯著優勢。
圖9a-c示出一種能夠將利用標準微製造處理製造之半導體晶粒20首先轉移至臨時載體基材50上的雙重轉移處理。特定言之，如圖9a所示，將臨時載體基材50與包括位於其上之半導體晶粒20的基材25接觸。該基材25可為其上形成半導體晶粒20之源基材。晶粒20可藉由易斷裂拴繫構件26錨定或以其他方式黏附至基材25。在一些實施例中，易斷裂拴繫構件26可為導電的。將衝頭10與基材25接觸之壓力足以使 錨定晶粒20至基材25之繫栓26斷裂，及如圖9b所示，當衝頭10從基材25縮回時及從而將晶粒20轉移至臨時基材50。
如圖9c所示，可將臨時基材50裝填於轉移印刷工具從而利用轉移衝頭10拾取晶粒20之陣列(面朝下或朝向臨時基材50之前表面/電末端22)。可將低黏性聚矽氧黏合劑層51沉積於臨時載體基材50之表面上以利於該第一轉移步驟(從基材25至載體基材50)，及允許在第二轉移步驟期間(從載體基材50至衝頭10)之高產率拾取。另外或或者，在沉積低黏性黏合劑層51之前，可將電阻薄膜金屬加熱器元件53於臨時載體基材50之表面上圖案化。在圖9c之第二拾取步驟期間可對該等加熱器元件53供電以利於從臨時載體基材50擷取半導體晶粒20。特定言之，熱引發之黏合劑層51之熱膨脹可導致剪切應力，造成半導體晶粒20與黏合劑層51之間之界面處脫離。
微米大小半導體晶粒之轉移焊接亦允許將大陣列多末端裝置整合於大面積剛性或可撓性基材上。因為在適度溫度下處理時大多數塑料基材之一般較差的尺寸穩定性，在塑料基材上進行精確的層-層圖案化步驟可為固有挑戰。本發明之實施例因而提供一種相比於大面積基材上互連超薄多末端裝置之其他方法之改良。例如，金屬邊緣上互連法一般依賴下列處理順序：1)在第一步中，將多末端裝置之陣列轉移印刷(以末端朝上)於目標基材之表面上；2)在第二步中，將介電間層(視需要)沉積及圖案化以經由各裝置末端上方的區域開放接點；及3)在第三步中，沉積及圖案化金屬層以形成電互連。圖案化步驟(2)及(3)之對準記錄可受目標基材之尺寸穩定性限制，其因而可限制可在單一暴露步驟中圖案化之最大面積(針對所選組之臨界記錄設計規則)。利用根據文中所述之實施例之轉移焊接處理可克服此等及其他限制。
圖10及11示出一種可用於在較大面積剛性或塑料基材上互連超薄 多末端裝置之較大陣列之處理順序的示意圖。特定言之，如圖10所示，在目標基材30之表面上方沉積及圖案化金屬層以界定互聯62之陣列及局部對準標記63。在圖11中，將超薄多末端裝置20之陣列轉移焊接於在目標基材30之表面上界定之互聯線62上。局部界定之對準標記63用於對準轉移裝置之各陣列。因此，在文中所述之實施例中，對準記錄精確度不係目標基材30之大小的函數，而主要是在轉移焊接操作期間使用之轉移衝頭10的大小的函數。可達成之對準精確度因此受局部變形(在各印記陣列內)而非受目標基材30之大面積(全部)變形影響。
根據文中所述實施例之轉移焊接整合法亦可用於改進轉移印刷週期通量，其可適用於要求較大面積目標基材之應用中。例如，多個雷射束或快速掃描光可用於在短於一般要求更慢(即<1 mm/s)的衝頭脫離速率之先前技術轉移印刷處理的時期內快速轉移焊接晶粒的大陣列，從而在經黏合劑塗佈之目標基材上達成高轉移印刷產率。此外，由於未在目標基材上使用黏合劑，故可從源基材上拾取晶粒之連續陣列及接著以連續印刷操作選擇性地轉移焊接至目標基材之表面上。相比一些習知轉移印刷處理，在每次選擇性印刷操作之後，轉移衝頭不必利用半導體晶粒之新陣列再次填充。
圖12a-b說明一種根據本發明之實施例之轉移順序的應用，其經由減少工具頭移動距離可顯著改進於大面積基材上之工具通量。特定言之，如圖12a所示，利用衝頭10可從源晶圓拾取半導體晶粒20之連續陣列(即，非稀疏的)，及該衝頭10相對目標基材30按壓以使晶粒20與目標基材上之共晶堆疊32接觸。藉由選擇性地將部分共晶堆疊32暴露於電磁輻射(以雷射束4說明)以重熔該部分共晶堆疊，因此結合所選部分(而非全部)之半導體晶粒20至目標基材30，從而將半導體晶粒20之分散陣列(例如，晶粒20之子集)選擇性地雷射焊接於目標基材30 上。如圖12b所示，接著縮回衝頭10及指引目標基材30至新的印刷位置。在後續轉移步驟中，可將半導體晶粒之其他分散陣列選擇性地雷射焊接於新的印刷位置上。一旦衝頭10完全無填充(例如，在多個印刷操作之後)，將轉移衝頭10再次對準源基材以拾取半導體晶粒20之新陣列。
因此，如文中所述之本發明之實施例提供導電共晶層，其對電磁輻射回應可選擇性地重熔以將可印刷半導體組件結合至目標基材。由於共晶層比一般轉移印刷脫離速率更快地固化(例如，從液相至固相之轉變)，本發明之實施例相比其他轉移印刷法在例如通量及精確度方面可提供優勢。
儘管已參考特定實施例敘述本發明，但是應理解在本發明之範圍及實質內可作出修改及變動。因此，以上實施例及所有該等修改及變動欲含於由以下申請專利範圍界定之本發明的範圍及實質內。
相關申請案之交互參照
此部分接續申請案為35 USC § 111(a)申請案，其主張來自於2011年3月22日申請之題為「Electrically Bonded Arrays Of Transfer Printed Active Components」之國際專利申請案第PCT/2011/029365號在35 USC §119及§120下的優先權，後者主張於2010年3月29日申請之美國臨時專利申請案第61/318,522號的優先權，其揭示內容係以引用之方式併入本文中，如同以其全文闡明般。
4‧‧‧高能雷射束
10‧‧‧衝頭
11‧‧‧柱
20‧‧‧半導體晶粒
30‧‧‧目標基材
31‧‧‧共晶堆疊
32‧‧‧第二共晶堆疊

Claims (31)

  1. 一種印刷可轉移組件之方法，該方法包括：於目標基材上按壓其上包括至少一個可轉移半導體組件之衝頭，使得該至少一個可轉移組件及該目標基材之一表面與傳導性共晶層之相對表面接觸，其中該衝頭包括在平面圖中至少部分與該至少一個可轉移組件對準之透明部分；在該目標基材上按壓該衝頭期間，將該至少一個可轉移組件暴露於透過該衝頭之透明部分引導之電磁輻射以重熔該共晶層；及接著從該目標基材分離該衝頭以從該衝頭脫離該至少一個可轉移組件及將該至少一個可轉移組件印刷於該目標基材之表面上。
  2. 如請求項1之方法，其中該電磁輻射包括由光源提供之雷射輻射。
  3. 如請求項2之方法，其中該雷射輻射加熱該至少一個可轉移組件，及其中該至少一個可轉移組件側向散佈其表面上方之熱以重熔該共晶層。
  4. 如請求項2之方法，其中該至少一個可轉移半導體組件之能隙對該雷射輻射之波長為透明的，及其中該雷射輻射加熱該共晶層以重熔該共晶層。
  5. 如請求項1之方法，其中該目標基材之表面包括粗糙表面，及其中該共晶層在其重熔之後提供與該至少一個可轉移組件之實質上平坦的界面。
  6. 如請求項5之方法，其中該目標基材包括未拋光陶瓷基材、未拋光多晶矽基材、未拋光金屬基材、印刷電路板及/或塑料基材。
  7. 如請求項1之方法，其中該至少一個可轉移半導體組件包括複數 個位於該衝頭上之可轉移半導體組件，及其中暴露包括：使該複數個可轉移組件其中一些選擇性地暴露於透過該衝頭之電磁輻射，從而重熔與其接觸之該共晶層之部分而不重熔該共晶層之其他部分，及其中從該目標基材分離該衝頭包括：從該目標基材分離該衝頭以選擇性地從該衝頭脫離該複數個可轉移組件其中一些而不脫離該複數個可轉移組件之剩餘部分。
  8. 如請求項7之方法，其中該複數個可轉移組件包括可轉移組件之連續陣列，及在該目標基材上按壓該衝頭之前，進一步包括如下步驟：將該衝頭與其上包括可轉移組件之陣列的源基材接觸；及從該源基材縮回該衝頭以將該可轉移組件之陣列轉移至該衝頭，其中從該衝頭脫離之該複數個可轉移組件其中一些包括該陣列之子集。
  9. 如請求項1之方法，其中該共晶層包括含有至少兩個不同層之多層堆疊。
  10. 如請求項1之方法，其中該共晶層包括鄰近該至少一個可轉移組件之邊緣部分的第一共晶堆疊，及介於該等邊緣部分之間之第二共晶堆疊，及其中暴露包括選擇性地將該至少一個可轉移組件之邊緣部分暴露於電磁輻射以重熔該第一共晶堆疊而不重熔該第二共晶堆疊。
  11. 如請求項1之方法，其中該共晶層包括鄰近該至少一個可轉移組件之邊緣部分的第一共晶堆疊，及介於該等邊緣部分之間之第二共晶堆疊，及其中該第一共晶堆疊包括具有比該第二共晶堆 疊更低之共晶形成溫度的材料，其中暴露包括將該至少一個可轉移組件暴露於電磁輻射以在低於該第二共晶堆疊之共晶形成溫度的溫度下重熔該第一共晶堆疊，及進一步包括：在足以選擇性地重熔該第二共晶堆疊而不重熔在該第一共晶堆疊之重熔時所形成之合金材料之溫度下，加熱該目標基材。
  12. 如請求項11之方法，其中該第二共晶堆疊提供與該至少一個可轉移組件之歐姆接點。
  13. 如請求項10之方法，其中該第一共晶堆疊包括金屬合金，及其中該第二共晶堆疊包括金屬-半導體合金。
  14. 如請求項1之方法，其中該至少一個可轉移組件包括第一多接面太陽能電池，其堆疊在具有比該第一多接面太陽能電池更低之能隙之第二多接面太陽能電池上，及其中介於該第一與該第二太陽能電池之間之界面包括共晶材料。
  15. 如請求項14之方法，其中該界面進一步包括至少一個由該第二多接面太陽能電池中之凹陷突出的金屬指狀物，及其中該至少一個金屬指狀物包括其上之共晶材料。
  16. 如請求項14之方法，其進一步包括：沿介於該第一與該第二多接面太陽能電池之界面的固有摻雜層或P-N二極體結構；及在與該第二太陽能電池相對之該固有摻雜層或P-N二極體結構上之經摻雜之側向電流散佈層。
  17. 如請求項1之方法，其進一步包括：識別出印刷在該目標基材上之至少一個可轉移組件為有缺陷的；回應識別出該至少一個可轉移組件為有缺陷的，使該衝頭與 該至少一個可轉移組件接觸；將該至少一個可轉移組件暴露於透過該衝頭引導之第二電磁輻射以重熔該共晶層；及然後從該目標基材縮回其上包括該至少一個可轉移組件之衝頭，同時重熔該共晶層以從該目標基材脫離該至少一個可轉移組件。
  18. 如請求項1之方法，其中該共晶層提供在該至少一個可轉移組件與該目標基材上之金屬互連線之間之電連接。
  19. 如請求項18之方法，其中該至少一個可轉移組件包括由其表面突出之一或多個金屬指狀物層，及其中該共晶層位於該等金屬指狀物層之上。
  20. 如請求項18之方法，其進一步包括：圖案化該目標基材上之金屬層以界定該金屬互連線及局部對準標記；及在該目標基材上按壓該衝頭之前，將該衝頭與該目標基材上之局部對準標記對準。
  21. 如請求項1之方法，其中該至少一個可轉移組件包括太陽能電池、發光二極體、雷射二極體或電晶體。
  22. 一種用於製造可印刷組件之陣列之系統，其包括：衝頭，其包括位於其轉移表面上之至少一個可印刷半導體組件及在平面圖中至少部分與該至少一個可印刷組件對準之透明部分；轉移印刷工具頭，其包括其上安裝之該衝頭；控制器，其經組態以操作該轉移印刷工具頭從而在該目標基材上按壓該衝頭，以使該至少一個可印刷組件接觸該目標基材之表面，其中該至少一個可印刷組件及/或該目標基材之表面包 括位於其上之傳導性共晶層；及電磁輻射源，其經組態以當在該目標基材上按壓該衝頭時將該至少一個可印刷組件暴露於透過該衝頭之透明部分引導之電磁輻射以重熔該共晶層，其中該控制器經組態以操作該轉移印刷工具頭以在重熔該共晶層之後從該目標基材分離該衝頭，從而從該衝頭脫離該至少一個可印刷組件及將該至少一個可印刷組件轉移至該目標基材之表面上。
  23. 如請求項22之系統，其中該電磁輻射源包括光源，及其中該電磁輻射包括雷射輻射。
  24. 如請求項23之系統，其中該雷射輻射加熱該至少一個可印刷組件，及其中該至少一個可印刷組件側向散佈其表面上方之熱以重熔該共晶層。
  25. 如請求項23之系統，其中該至少一個可印刷半導體組件之能隙對該雷射輻射之波長為透明的，及其中該雷射輻射加熱該共晶層以重熔該共晶層。
  26. 如請求項22之系統，其中該目標基材之表面包括粗糙表面，及其中該共晶層在其重熔之後提供與該至少一個可印刷組件之實質上平坦的界面。
  27. 如請求項22之系統，其中：該至少一個可印刷半導體組件包括位於該衝頭上之複數個可印刷半導體組件；該電磁輻射源經組態以透過該衝頭選擇性地將該複數個可印刷組件其中一些暴露於該電磁輻射以重熔與之接觸的該共晶層之部分而不重熔該共晶層之其他部分；及該控制器經組態以將該衝頭從該目標基材分離，以從該衝頭 選擇性地脫離該複數個可印刷組件其中一些，而不脫離該複數個可印刷組件之剩餘部分。
  28. 如請求項22之系統，其中該至少一個可印刷組件包括第一多接面太陽能電池，其堆疊在具有比該第一多接面太陽能電池更低之能隙之第二多接面太陽能電池上，及其中介於該第一與該第二太陽能電池之間之界面包括共晶材料。
  29. 一種用於印刷可轉移組件之方法，其包括以下步驟：(a)於目標基材上按壓其上包括至少一個可轉移半導體組件之衝頭，使得該至少一個可轉移組件及該目標基材之一表面與傳導性共晶層之相對表面接觸，其中該衝頭包括在平面圖中至少部分與該至少一個可轉移組件對準之透明部分；(b)在該目標基材上按壓該衝頭期間，將該至少一個可轉移組件暴露於透過該衝頭之透明部分引導之電磁輻射以重熔該共晶層；及(c)從該目標基材分離該衝頭以從該衝頭脫離該至少一個可轉移組件及將該至少一個可轉移組件印刷於該目標基材之表面上。
  30. 如請求項29之方法，其中該至少一個可轉移半導體組件包括位於該衝頭上之複數個可轉移半導體組件，其中步驟(b)之暴露包括：使該複數個可轉移組件其中一些選擇性地暴露於透過該衝頭之電磁輻射以重熔與之接觸之該共晶層之部分而不重熔該共晶層之其他部分；及其中步驟(c)之從該目標基材分離該衝頭包括：從該目標基材分離該衝頭以從該衝頭選擇性地脫離該複數個可轉移組件其中一些而不脫離該複數個可轉移組件之剩餘部 分。
  31. 如請求項29之方法，其進一步包括以下步驟：(d)識別出印刷在該目標基材上之至少一個可轉移組件為有缺陷的；(e)回應識別出該至少一個可轉移組件為有缺陷的，使該衝頭與該至少一個可轉移組件接觸；(f)將該至少一個可轉移組件暴露於透過該衝頭引導之第二電磁輻射以重熔該共晶層；及(g)從該目標基材縮回其上包括該至少一個可轉移組件之衝頭，同時重熔該共晶層以從該目標基材脫離該至少一個可轉移組件。
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