TWI653694B - 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 - Google Patents
微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 Download PDFInfo
- Publication number
- TWI653694B TWI653694B TW106131483A TW106131483A TWI653694B TW I653694 B TWI653694 B TW I653694B TW 106131483 A TW106131483 A TW 106131483A TW 106131483 A TW106131483 A TW 106131483A TW I653694 B TWI653694 B TW I653694B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal bonding
- bonding pad
- emitting element
- micro light
- light emitting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 248
- 239000002184 metal Substances 0.000 claims abstract description 248
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 29
- 238000002844 melting Methods 0.000 claims description 28
- 230000008018 melting Effects 0.000 claims description 28
- 125000006850 spacer group Chemical group 0.000 claims description 22
- 230000005496 eutectics Effects 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 14
- 238000009736 wetting Methods 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
- 230000008595 infiltration Effects 0.000 claims description 4
- 238000001764 infiltration Methods 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005191 phase separation Methods 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 1
- 238000003032 molecular docking Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 239000011651 chromium Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004093 laser heating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1141—Manufacturing methods by blanket deposition of the material of the bump connector in liquid form
- H01L2224/11422—Manufacturing methods by blanket deposition of the material of the bump connector in liquid form by dipping, e.g. in a solder bath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13155—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13166—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
- H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
微型發光元件陣列的製造方法包含以下步驟。提供轉移基板與金屬接合墊,金屬接合墊設置於轉移基板。提供成長基板與複數個微型發光元件。微型發光元件陣列設置於成長基板。以加熱溫度加熱熔融金屬接合墊並連接微型發光元件的電極與金屬接合墊。移除該成長基板。轉移載板包含轉移基板與複數個金屬接合墊。複數個金屬接合墊設置於轉移基板。金屬接合墊之間透過分隔空間相分離。微型發光元件陣列包含前述轉移載板與複數個微型發光元件。微型發光元件具有電極。金屬接合墊連接電極以固定微型發光元件於轉移載板。
Description
本發明係關於一種微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列,特別關於一種用於同時進行微型發光元件轉移與導電凸塊設置的微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列。
發光二極體(light emitting diode,LED)作為高效率的發光元件,被廣泛的使用在各種領域。目前習用的發光元件製造方法是透過磊晶的方式,在磊晶基板上依序形成N型半導體層、發光層、P型半導體層與電極,藉此得到發光元件。
當發光元件尺寸縮小至微米等級而形成微型發光元件,並被應用於顯示裝置時,眾多微型發光元件構成的微型發光元件陣列被排列在顯示面板上以作為顯示裝置的光源。目前業界的顯示裝置製造方法中,須多次在微型發光元件陣列、轉移基板與顯示面板上設置接合材料,以便將微型發光元件陣列自磊晶基板轉移到轉移基板,再將微型發光元件陣列由轉移基板轉移到顯示面板。然而,多次的設置接合材料拉長了顯示裝置的製造時間,造成顯示裝置的製造成本提高。再者,由於微型發光元件的尺寸相較於習知的發光元件小,對於使用微型發光元件的顯示裝置,每個設置接合材料的步驟均提高了微型發光元件受損的機率,連帶影響了顯示裝置的可靠度。
本發明旨在提供同時進行微型發光元件轉移與導電凸塊設置的微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列,用以減少設置接合材料的次數。藉此,對於製造過程中使用本發明的微型發光元件陣列的顯示裝置,顯示裝置的製造成本得以降低,而顯示裝置的可靠度得到提高。
依據本發明一實施例的微型發光元件陣列的製造方法,包含以下步驟。提供一轉移基板與金屬接合墊,金屬接合墊設置於轉移基板。提供一成長基板與複數個微型發光元件,微型發光元件陣列設置於成長基板,且每一微型發光元件遠離成長基板的表面具有電極。以加熱溫度加熱熔融金屬接合墊並連接微型發光元件的電極與金屬接合墊。移除成長基板。
依據本發明一實施例的轉移載板,係用於接合微型發光元件的電極與轉移微型發光元件。轉移載板包含轉移基板與複數個金屬接合墊。金屬接合墊設置於轉移基板。複數個金屬接合墊之間透過分隔空間相分離。
依據本發明一實施例的微型發光元件陣列,包含轉移載板與複數個微型發光元件。轉移載板包含轉移基板與金屬接合墊。金屬接合墊設置於轉移基板。每一微型發光元件的表面具有電極。每一電極具有彼此相鄰的連接面與側面。金屬接合墊連接電極的連接面與部分的側面以固定微型發光元件於轉移載板。
綜上所述,本發明一實施例的微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列,透過轉移載板的金屬接合墊連接微型發光元件陣列。接著,由轉移載板分離發微型光元件陣列時,金屬接合墊與發光元件一同由轉移載板被分離。藉此,被分離的金屬接合墊可作為微型發光元件陣列的導電凸塊,以供微型發光元件陣列後續接合至接收基板的導電接合墊時使用。如此一來,經由本發明的同時進行微型發光元件轉移
與導電凸塊設置的微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列,設置接合材料於微型發光元件陣列的次數減少,降低了顯示裝置的製造成本與提高了顯示裝置的可靠度。
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。
100、100a、100b、100c、100d‧‧‧轉移載板
110‧‧‧轉移基板
120‧‧‧金屬接合墊
130‧‧‧凸塊底層金屬
140‧‧‧間隔層
150‧‧‧隔離材料
160‧‧‧浸潤層
200‧‧‧成長載板
210‧‧‧微型發光元件結構
220‧‧‧微型發光元件
221‧‧‧磊晶結構
222‧‧‧電極
222a‧‧‧連接面
222b‧‧‧側面
230‧‧‧導電凸塊
310‧‧‧接收基板
320‧‧‧導電接合墊
330‧‧‧輔助導電凸塊
400‧‧‧顯示裝置
S‧‧‧分隔空間
T‧‧‧轉移裝置
圖1為本發明第一實施例的微型發光元件陣列與使用其的顯示裝置的製造方法流程圖。
圖2為圖1的步驟S103的詳細方法流程圖。
圖3至圖9為本發明第一實施例的微型發光元件陣列與使用其的顯示裝置的製造方法示意圖。
圖10至圖12為本發明第一實施例中三種不同金屬接合墊型態的示意圖。
圖13為本發明第一實施例中另一型態的接收基板與導電接合墊的示意圖。
圖14為本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法流程中,步驟S203的詳細流程圖。
圖15為本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法流程中,步驟S203的製造方法示意圖。
圖16與圖17為本發明第一實施例的微型發光元件陣列進行選擇性轉移的示意圖。
圖18為本發明第三實施例的轉移載板的剖面示意圖。
圖19為本發明第四實施例的轉移載板的剖面示意圖。
圖20為本發明第五實施例的轉移載板的剖面示意圖。
圖21為本發明第六實施例的轉移載板的剖面示意圖。
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。
首先說明本發明第一實施例的微型發光元件陣列與使用其的顯示裝置的製造方法,請參照圖1至圖12。圖1為本發明第一實施例的微型發光元件陣列與使用其的的製造方法流程圖。圖2為圖1的步驟S103的詳細方法流程圖。圖3至圖9為本發明第一實施例的微型發光元件陣列與使用其的顯示裝置的製造方法示意圖。圖10至圖12為本發明第一實施例中三種不同金屬接合墊型態的示意圖。
首先,提供轉移基板與金屬接合墊(S101)。
詳細來說,如圖3所示,提供一轉移載板100,轉移載板100包含一轉移基板110與至少一金屬接合墊120。金屬接合墊120設置於轉移基板110上。金屬接合墊120例如為圖10所示呈陣列狀的複數個金屬接合墊、圖11所示呈條狀的多條金屬接合墊或是圖12所示呈面狀的單一個金屬接合墊。於本發明第一實施例中,金屬接合墊120係使用呈陣列狀的複數個金屬接合墊進行說明,但本發明使用的金屬接合墊型態不以此為限。金屬接合墊120的材料例如為熔點小於300度℃的低熔點金屬,例如為銦(In)、錫(Sn)、金錫合金或銅。較佳的,金屬接合墊120的材料為熔點小於200度℃的低熔點金屬,可使後續轉移時的製程溫度不需太高,以增加顯示裝置的製造良率,且使用金屬做為金屬接合墊材料,亦可以使元件於製程中的散熱效率較佳。轉移基板110的材料例如為二氧化矽(SiO2)、矽(Si)、碳化矽(SiC)、藍寶石(Sapphire)或氧化鋁(Al2O3)。
接著,提供成長基板與複數個微型發光元件(S102)。
詳細來說,如圖3所示,提供一微型發光元件結構200,微型發光元件結構200包含一成長基板210與複數個微型發光元件220。微型發光元件220陣列設置於成長基板210。每一微型發光元件220遠離成長基板210的表面具有至少一電極222。此處,微型發光元件220包含一磊晶結構221與二電極222。於本發明第一實施例中,使用覆晶式發光元件進行說明。當發光元件220為覆晶式發光元件時,二電極222設置於磊晶結構221遠離成長基板210的表面。於本發明其他實施例中,微型發光元件亦可為垂直式發光元件時。電極222的材料例如為金(Au)、銀(Ag)、銅(Cu)、鍺(Ge)、鎳(Ni)、鈦(Ti)、鋁(Al)、上述金屬的合金或上述的組合。於本發明第一實施例中,成長基板210的材料例如為二氧化矽(SiO2)、矽(Si)、藍寶石(Sapphire)或氧化鋁(Al2O3)。
特別說明的是,於本發明第一實施例中,金屬接合墊120的厚度為3至4微米(μm),但不以此為限。於本發明其他實施例中,金屬接合墊120的厚度為1至6微米。金屬接合墊的厚度大於6微米,可能使熔融態的金屬接合墊120於連接微型發光元件220時易溢上電極222之間造成短路。金屬接合墊的厚度小於1微米,可能使熔融態的金屬接合墊120於連接微型發光元件220時彼此的接觸面積不足而導致彼此間的連接力不夠。
磊晶結構的厚度小於等於6微米為佳,且磊晶結構的厚度通常大於1微米,太厚或太薄都將影響發光元件的良率。發光元件220的最大寬度尺寸介於1到100微米之間,較佳是小於30微米,亦即第一實施例中的微型發光元件220為一微米級的微型發光元件(Micro LED)。本發明第一實施例中的微型發光元件220的一外部量子效率曲線的一最大峰值電流密度,較佳地,介於0.01A/cm2至2A/cm2之間。意即,本發明中的微型發光元件適於在低電流密度的情況下操作。
接著,以加熱溫度加熱熔融金屬接合墊,並連接微型發光元件的電極與金屬接合墊(S103)。
詳細來說,如圖2與圖4所示,於本發明第一實施例中,以加熱溫度加熱熔融金屬接合墊,並連接微型發光元件的電極與金屬接合墊(S103)的步驟包含以下三個子步驟。
首先,對接金屬接合墊與微型發光元件的電極(S1031)。詳細來說,使每一微型發光元件220的電極222對準金屬接合墊120,並且使每一微型發光元件220的電極222接觸金屬接合墊120。配合金屬接合墊120的型態,呈面狀或呈條狀的單一金屬接合墊120同時接觸多個電極222,而呈陣列狀的單一金屬接合墊120僅接觸單一電極222。
接著,以加熱溫度加熱熔融金屬接合墊,使熔融態的金屬接合墊浸潤電極(S1032)。詳細來說,金屬接合墊120的熔點小於電極222的熔點,而加熱溫度介於金屬接合墊120的熔點與電極222的熔點之間。因此,當以加熱溫度對轉移基板110上的金屬接合墊120進行加熱時,金屬接合墊120呈熔融態,而電極222維持在固態。由於熔融態的金屬接合墊120的材料分子與電極222的材料分子之間的吸引力大於熔融態的金屬接合墊120的材料分子之間的吸引力,使得熔融態的金屬接合墊120浸潤電極222並附著於電極222的表面。由於金屬接合墊120為熔點低的金屬,因此加熱溫度不需過高就可以使金屬接合墊120呈熔融態,藉此可以降低製程上的難度並避免對微型發光元件以及相關元件產生損害。加熱金屬接合墊120的方式例如為雷射加熱。
接著,冷卻熔融態的金屬接合墊,使金屬接合墊連接電極(S1033)。詳細來說,停止對金屬接合墊120加熱,使熔融態的金屬接合墊120冷卻與固化。藉此,固化後的金屬接合墊120連接電極222,使得微型發光元件220被連接於轉移基板110。
於本發明第一實施例中,加熱溫度介於金屬接合墊120的熔
點與電極222的熔點之間。再者,於本發明第一實施例中,加熱溫度除了介於金屬接合墊120的熔點與電極222的熔點之間,加熱溫度亦低於金屬接合墊120與電極222進行共晶接合的共晶溫度。舉例來說,使用的加熱溫度可選擇為金屬接合墊120與電極222的包晶溫度、金屬接合墊材質熔點或略高於金屬接合墊材質熔點,且加熱溫度低於金屬接合墊120與電極222進行共晶接合的共晶溫度。如此一來,於本發明第一實施例中,金屬接合墊120與電極222的連接面產生無合金的假焊狀態。金屬接合墊120與電極222之間依靠物理性或化學性的擴散力連接,未依靠共晶鍵結(Eutectic Bonding)所產生的鍵結力進行接合。
接著,移除成長基板(S104)。
詳細來說,如圖5所示,透過剝離技術分離成長基板210與微型發光元件220,得到本發明第一實施例的微型發光元件陣列。使用的剝離技術例如為雷射剝離(Laser Lift-off)。
經由前述步驟S101至步驟S104,可得到本發明第一實施例的微型發光元件陣列。如圖6所示,本發明第一實施例的微型發光元件陣列包含一轉移載板100與複數個微型發光元件220。轉移載板100包含一轉移基板110與複數個金屬接合墊120。複數個金屬接合墊120陣列設置於轉移基板110的表面。複數個微型發光元件220陣列設置於轉移載板100。微型發光元件220包含一磊晶結構221與二電極222。二電極222設置於磊晶結構221朝向轉移基板110的表面。複數個微型發光元件220透過複數個金屬接合墊120陣列設置於轉移載板100。詳細來說,電極222具有彼此相鄰的連接面222a與側面222b,連接面222a朝向轉移基板110。金屬接合墊120連接電極222的連接面222a與部分的側面222b,藉此固定微型發光元件220於轉移載板100。
於本發明第一實施例中,電極222的側面222b受金屬接合墊120覆蓋的面積比例大於等於0.05且小於等於0.3,藉此控制微型發光
元件220與轉移基板110之間接合力的強度,避免後續製程中不易將微型發光元件220自轉移基板110分離的問題。再者,藉由控制電極222的側面222b受金屬接合墊120覆蓋的面積,可進一步控制後續自轉移基板110分離微型發光元件220時,附著於電極222的部分金屬接合墊120的體積。如此一來,因附著於相鄰二電極222的部分金屬接合墊120彼此直接連接,進而導致短路的狀況可被避免。
當金屬接合墊120與電極222之間透過包晶反應形成連接結構時,或是透過假焊狀態的金屬擴散力形成連接結構時,相較於一般用膠固定的連接方式,金屬接合墊120與電極222之間具有較強的連接力。因此,在進行微型發光元件220轉移的過程中,微型發光元件220不易產生位移的問題。
於前述移除成長基板(S104)得到本發明第一實施例的微型發光元件陣列後,接著可將此微型發光元件陣列中的微型發光元件220轉移至接收基板310,以便後續製造包含此接收基板310與微型發光元件220的顯示裝置400。以下說明將微型發光元件陣列中的微型發光元件轉移至接收基板的方法。
首先,以加熱溫度加熱熔融金屬接合墊(S105)。
詳細來說,如圖7所示,先以轉移裝置T固定微型發光元件220,接著再次以加熱溫度對轉移基板110上的金屬接合墊120進行加熱,使得金屬接合墊120呈熔融態,而電極222維持在固態。藉此,轉移基板110與微型發光元件220的電極222之間的連接力被消除。加熱金屬接合墊120的方式例如為雷射加熱。轉移裝置T例如包括一載台(未繪示)和一配置於載台上、並能固定微型發光元件的轉移頭(未繪示)。轉移頭(未繪示)透過例如是黏接力、機械力、靜電力或是空氣壓差所產生的力而使微型發光元件固定於轉移頭上(未繪示),但並不以此為限。加熱溫度例如介於金屬接合墊120的熔點與電極222的熔點之間,加熱溫度亦低於金屬接合墊
120與電極222進行共晶接合的共晶溫度。於本實施例中,步驟S105中的加熱溫度可相同於步驟S103中的加熱溫度,亦可相異於步驟S103中的加熱溫度。
接著,自轉移基板分離微型發光元件,熔融態的金屬接合墊附著於電極並冷卻形成固著於電極的導電凸塊(S106)。
詳細來說,如圖7所示,透過轉移裝置T自轉移基板110拾取並分離微型發光元件220。由於熔融態的金屬接合墊120的材料分子與電極222的材料分子之間的吸引力大於熔融態的金屬接合墊120的材料分子之間的吸引力,熔融態的金屬接合墊120隨著微型發光元件220離開轉移基板110而被一分為二。部分熔融態的金屬接合墊120黏附於電極222並脫離轉移基板110,另一部份熔融態的金屬接合墊120被留在轉移基板110的表面。黏附於電極222的熔融態的金屬接合墊120於脫離轉移基板110後逐漸冷卻,並且固著於電極222表面形成導電凸塊230。
透過包晶反應以及透過假焊狀態形成連接結構的連接過程是可逆的。因此,在轉移微型發光元件220至接收基板的過程中,相較於解除共晶接合所需的高溫,僅需較低的加熱溫度即可解除包晶反應或假焊狀態形成的連接結構。如此一來,於本發明第一實施例中可避免解除連接結構的加熱溫度過高而造成微型發光元件220損壞的問題。
接著,提供接收基板與複數個導電接合墊(S107)。
詳細來說,如圖8所示,接收基板310包括導電線路(未繪示)被佈設於接收基板310。複數個導電接合墊320陣列設置於接收基板310的表面,以作為微型發光元件220電性連接導電線路(未繪示)的接點。接收基板310例如為互補式金屬氧化物半導體基板、印刷電路板、矽基液晶基板、薄膜電晶體基板或是其他工作電路的基板。導電接合墊320的材料例如為鈦(Ti)、鉑(Pt)、金(Au)、鋁(Al)、鎳(Ni)、鉻(Cr)、上述材料的合金或上述組合。
接著,加熱熔融導電凸塊,透過導電凸塊分別接合微型發光元件於接收基板的導電接合墊(S108)。
詳細來說,如圖8所示,加熱導電凸塊230使導電凸塊230呈熔融態。使微型發光元件220的電極222對準導電接合墊320,並且使微型發光元件220的電極222透過熔融態的導電凸塊230與導電接合墊320相連接。當導電凸塊230冷卻固化後,電極222與導電接合墊320透過導電凸塊230相接合以及電性連接。於未繪示出的實施中,亦可以使微型發光元件的電極先對準導電接合墊,再加熱導電凸塊而使導電凸塊呈熔融態,使微型發光元件的電極透過熔融態的導電凸塊與導電接合墊相連接。
如圖9所示,當微型發光元件220被固著於接收基板310後,使轉移裝置T脫離微型發光元件220即得到設置有微型發光元件220的接收基板310,而形成後續可被應用於製造行動裝置、手機、電視等的顯示裝置400。
於本發明第一實施例中,熔融態的導電凸塊230的溫度高於導電凸塊230與電極222的共晶接合溫度,且熔融態的導電凸塊230的溫度高於導電凸塊230與導電接合墊320的共晶接合溫度。因此,導電凸塊230與導電接合墊320之間為共晶接合,導電凸塊230與電極222之間亦為共晶接合,使得微型發光元件220被穩固地固著於接收基板310的表面。
於本發明第一實施例中,在接合微型發光元件220至接收基板310的導電接合墊320前,導電凸塊230與電極222之間的包晶反應留下了細緻的合金晶粒於導電凸塊230內部與表面。具有細緻的晶粒結構的導電凸塊230與導電接合墊320進行共晶接合時,兩者之間細緻的連接界面可進一步提升接合品質,藉此提供更佳的連接力或是更低的阻抗。
於本發明第一實施例中,使用的導電接合墊320的表面未額外設置輔助導電凸塊,但不以此為限。於本發明第一實施例中亦可使用另一型態的接收基板310與導電接合墊320,請參照圖13。圖13為本發明
第一實施例中另一型態的接收基板310與導電接合墊320的示意圖。如圖13所示,每一導電接合墊320遠離接收基板310的表面設置有一輔助導電凸塊330。輔助導電凸塊330可選自與導電凸塊330同一材料。透過導電凸塊230與輔助導電凸塊330,微型發光元件220的電極222與接收基板310的導電接合墊320之間具有足量的接合材料以達到較佳的接合效果。
於本發明第一實施例中,透過轉移載板100的金屬接合墊120連接微型發光元件220陣列。由轉移載板100分離微型發光元件220陣列時,金屬接合墊120與微型發光元件220一同由轉移載板100被分離。藉此,被分離的金屬接合墊120可作為微型發光元件220陣列的導電凸塊230,以供微型發光元件220陣列後續接合至接收基板310的導電接合墊320時使用。如此一來,對於使用本發明的微型發光元件陣列的顯示裝置,設置接合材料於微型發光元件陣列的次數減少,降低了顯示裝置的製造成本與提高了顯示裝置的可靠度。
接下來說明本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法,請參照圖14與圖15。圖14為本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法流程中,步驟S203的詳細流程圖。圖15為本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法流程中,步驟S203的製造方法示意圖。本發明第二實施例的微型發光元件陣列與使用其的顯示裝置的製造方法相似於本發明第一實施例的微型發光元件陣列與使用其的顯示裝置的製造方法,其差異主要在於步驟S103與步驟S203下所細分的子步驟。
於本發明第一實施例中,步驟S103為以加熱溫度加熱熔融金屬接合墊,並連接微型發光元件的電極與金屬接合墊。步驟S103細分為步驟S1031、步驟S1032與步驟S1033三個步驟。步驟S1031為對接金屬接合墊與微型發光元件的電極。步驟S1032為以加熱溫度加熱熔融金屬接合墊,使熔融態的金屬接合墊浸潤電極。步驟S1033為冷卻熔融態的金
屬接合墊,使金屬接合墊連接電極。
於本發明第二實施例中,步驟S203同樣為以加熱溫度加熱熔融金屬接合墊,並連接微型發光元件的電極與金屬接合墊。但步驟S203下所細分的步驟S2031、步驟S2032與步驟S2033三個步驟不同於步驟S103下所細分的步驟S1031、步驟S1032與步驟S1033三個步驟。以下對步驟S203下所細分的步驟S2031、步驟S2032與步驟S2033三個步驟進行說明。
首先,以加熱溫度加熱熔融金屬接合墊(S2031)。
詳細來說,請參照圖15,金屬接合墊120的熔點小於電極222的熔點,而加熱溫度介於金屬接合墊120的熔點與電極222的熔點之間。當以加熱溫度對轉移基板110上的金屬接合墊120進行加熱時,金屬接合墊120呈熔融態。加熱金屬接合墊120的方式例如為雷射加熱。
接著,對接熔融態的金屬接合墊與微型發光元件的電極,使熔融態的金屬接合墊浸潤電極(S2032)。
詳細來說,使每一微型發光元件220的電極222對準熔融態的金屬接合墊120,並且使每一微型發光元件220的電極222接觸熔融態的金屬接合墊120。配合金屬接合墊120的型態,呈面狀與呈條狀的單一金屬接合墊120同時接觸多個電極222,而呈陣列狀的單一金屬接合墊120僅接觸單一電極222。由於熔融態的金屬接合墊120的材料分子與電極222的材料分子之間的吸引力大於熔融態的金屬接合墊120的材料分子之間的吸引力,使得熔融態的金屬接合墊120浸潤電極222並附著於電極222的表面。
接著,冷卻熔融態的金屬接合墊,使金屬接合墊連接電極(S2033)。
詳細來說,停止對金屬接合墊120加熱,使熔融態的金屬接合墊120冷卻與固化。藉此,固化後的金屬接合墊120連接電極222,使
得微型發光元件220被連接於轉移基板110。
本發明第二實施例中對於加熱熔融金屬接合墊使用的加熱溫度的相關條件相似於本發明第一實施例中對於加熱熔融金屬接合墊使用的加熱溫度的相關條件,在此便不再贅述。
接下來,說明本發明的微型發光元件陣列於修復顯示裝置中的壞點的應用,請參照圖6、圖16與圖17。圖16與圖17為本發明第一實施例的微型發光元件陣列進行選擇性轉移的示意圖。
於顯示裝置的製造過程中,需對接收基板310上的微型發光元件220陣列進行檢測,確保每一個微型發光元件220可正常發光。當發現某些微型發光元件220無法正常發光時,會針對無法正常發光的微型發光元件220進行替換。
首先,自顯示裝置400移除無法正常發光的微型發光元件(未繪示)。接著,選擇性的加熱圖6所示的微型發光元件220陣列中的特定區域以熔融此區域中的金屬接合墊120。接著,以轉移裝置T拾取此區域中的微型發光元件220。接著,對拾取的微型發光元件220的電極222所固著的導電凸塊230進行加熱以熔融導電凸塊230。接著,透過熔融的導電凸塊230將微型發光元件220接合至顯示裝置400的接收基板310上已移除無法正常發光的微型發光元件(未繪示)的導電接合墊320。如此一來,顯示裝置400的接收基板310上的微型發光元件220陣列中,無法正常發光的微型發光元件(未繪示)被替換為未損壞的微型發光元件220,完成壞點修復的工作。
接下來,說明本發明第三實施例至第六實施例的轉移載板的結構,請參照圖18至圖21。圖18為本發明第三實施例的轉移載板的剖面示意圖。圖19為本發明第四實施例的轉移載板的剖面示意圖。圖20為本發明第五實施例的轉移載板的剖面示意圖。圖21為本發明第六實施例的轉移載板的剖面示意圖。
本發明第三實施例的轉移載板100a適用於轉移垂直式發光元件與水平式發光元件。如圖18所示,本發明第三實施例的轉移載板100a包含一轉移基板110、複數個金屬接合墊120、複數個凸塊底層金屬130與一間隔層140。間隔層140設置於轉移基板110的表面。複數個凸塊底層金屬130陣列設置於間隔層140遠離轉移基板110的表面,且每一凸塊底層金屬130之間透過分隔空間S彼此相分離。複數個金屬接合墊120分別設置於複數個凸塊底層金屬130,且每一金屬接合墊120之間亦透過分隔空間S彼此相分離。
凸塊底層金屬130對於熔融態的金屬接合墊120係可浸潤的。間隔層140對於熔融態的金屬接合墊120係不可浸潤的。如此一來,在製造轉移載板100a的過程中,設置熔融態的金屬接合墊120於凸塊底層金屬130時,熔融態的金屬接合墊120傾向附著於凸塊底層金屬130而不易附著至間隔層140。藉此,熔融態的金屬接合墊120凝固形成球狀的金屬接合墊120,且避免熔融態的金屬接合墊120在間隔層140上流動而與相鄰的金屬接合墊120相連接。
於本發明第三實施例的轉移載板100a中。凸塊底層金屬130的材料例如為鈦(Ti)、鉑(Pt)、金(Au)、鋁(Al)、鎳(Ni)、鉻(Cr)、上述材料的合金或上述組合。間隔層140的材料例如為二氧化矽(SiO2)、氮化矽(SiNx)或其他高分子材料。本發明的轉移載板中,凸塊底層金屬130與間隔層140所使用的材料並不以上述的材料為限。
本發明第四實施例的轉移載板100b適用於轉移垂直式發光元件與水平式發光元件。如圖19所示,本發明第四實施例的轉移載板100b包含一轉移基板110、複數個金屬接合墊120、一隔離材料150與一浸潤層160。浸潤層160設置於轉移基板110的表面。複數個金屬接合墊120設置於浸潤層160表面,且每一金屬接合墊120之間透過分隔空間S彼此相分離。隔離材料150填充於分隔空間S底部,使得金屬接合墊120之間
透過隔離材料150與分隔空間S彼此相分離。
隔離材料150對於熔融態的金屬接合墊120係不可浸潤的。浸潤層160對於熔融態的金屬接合墊120係可浸潤的。如此一來,在製造轉移載板100b的過程中,設置熔融態的金屬接合墊120於浸潤層160時,相鄰的熔融態的金屬接合墊120受到隔離材料150的分隔。熔融態的金屬接合墊120傾向附著於浸潤層160而不易附著至隔離材料150。藉此,熔融態的金屬接合墊120凝固形成球狀的金屬接合墊120,且避免熔融態的金屬接合墊120在隔離材料150上流動而與相鄰的金屬接合墊120相連接。
於本發明第四實施例的轉移載板100b中,隔離材料150的材料例如為二氧化矽(SiO2)、氮化矽(SiNx)或其他高分子材料。浸潤層160的材料例如為鈦(Ti)、鉑(Pt)、金(Au)、鋁(Al)、鎳(Ni)、鉻(Cr)、上述材料的合金或上述組合。本發明的轉移載板中,隔離材料150與浸潤層160所使用的材料並不以上述的材料為限。
本發明第五實施例的轉移載板100c適用於轉移垂直式發光元件與水平式發光元件。如圖20所示,本發明第五實施例的轉移載板100c包含一轉移基板110、複數個金屬接合墊120、一間隔層140與一隔離材料150。間隔層140設置於轉移基板110的表面。複數個金屬接合墊120設置於間隔層140表面,且每一金屬接合墊120之間透過分隔空間S彼此相分離。隔離材料150填充於分隔空間S底部,使得金屬接合墊120之間透過隔離材料150與分隔空間S彼此相分離。
間隔層140對於熔融態的金屬接合墊120係不可浸潤的。隔離材料150對於熔融態的金屬接合墊120係不可浸潤的。如此一來,在製造轉移載板100c的過程中,設置熔融態的金屬接合墊120於間隔層140時,相鄰的熔融態的金屬接合墊120受到隔離材料150的分隔。熔融態的金屬接合墊120不易附著於間隔層140且不易附著至隔離材料150,使得
熔融態的金屬接合墊120傾向在原地團聚成球狀。藉此,熔融態的金屬接合墊120凝固形成球狀的金屬接合墊120,且避免熔融態的金屬接合墊120在隔離材料150上流動而與相鄰的金屬接合墊120相連接。
於本發明第五實施例的轉移載板100c中,間隔層140的材料例如為氮化矽(SiNx)、二氧化矽(SiO2)或其他高分子材料。隔離材料150的材料例如為氮化矽(SiNx)、二氧化矽(SiO2)或其他高分子材料。本發明的轉移載板中,間隔層140與隔離材料150所使用的材料並不以上述的材料為限。
於本發明第三實施例至第五實施例的轉移載板100a、100b、100c中,由於連接黏合微型發光元件220的電極222與轉移載板100a、100b、100c的金屬接合墊120的過程中,受到電極222推擠的熔融態的金屬接合墊120不易附著於間隔層140,進而不易在間隔層140上流動而與相鄰的金屬接合墊120或是電極222相連接。如此一來,對於第一電極與第二電極位於磊晶結構同一側,且二電極的間隔距離極小的水平式微型發光元件(未繪示),以及對於第一電極與第二電極位於磊晶結構相對二側,且二電極的間隔距離較大的垂直式微型發光元件(未繪示),使用轉移載板100a、100b、100c均可有效避免相鄰的二電極因金屬接合墊相連接而發生短路的問題。
本發明第六實施例的轉移載板100d適用於轉移垂直式發光元件和水平式發光元件。如圖21所示,本發明第六實施例的轉移載板100d包含一轉移基板110、一金屬接合墊120與一浸潤層160。浸潤層160設置於轉移基板110的表面。金屬接合墊120設置於浸潤層160表面。浸潤層160對於熔融態的金屬接合墊120係可浸潤的。
於本發明第六實施例的轉移載板100d中,浸潤層160的材料例如為鈦(Ti)、鉑(Pt)、金(Au)、鋁(Al)、鎳(Ni)、鉻(Cr)、上述材料的合金或上述組合,在此並不以上述的材料為限。
綜上所述,本發明的微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列,透過轉移載板的金屬接合墊連接微型發光元件陣列。由轉移載板分離微型發光元件陣列時,金屬接合墊與微型發光元件一同由轉移載板被分離。藉此,被分離的金屬接合墊可作為微型發光元件陣列的導電凸塊,以供微型發光元件陣列後續接合至接收基板的導電接合墊時使用。如此一來,對於使用本發明的微型發光元件陣列的顯示裝置,設置接合材料於微型發光元件陣列的次數減少,降低了顯示裝置的製造成本與提高了顯示裝置的可靠度。
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。
Claims (20)
- 一種微型發光元件陣列的製造方法,包含:提供一轉移基板與至少一金屬接合墊,該至少一金屬接合墊設置於該轉移基板;提供一成長基板與複數個微型發光元件,該些微型發光元件陣列設置於該成長基板,且每一該些微型發光元件遠離該成長基板的一表面具有至少一電極;以一加熱溫度加熱熔融該至少一金屬接合墊,並連接該些微型發光元件的該些電極與該至少一金屬接合墊;移除該成長基板;於移除該成長基板後,再次加熱熔融該至少一金屬接合墊;以及使該些微型發光元件自該轉移基板分離。
- 如請求項1的微型發光元件陣列的製造方法,其中以該加熱溫度加熱熔融該至少一金屬接合墊並連接該些微型發光元件的該些電極與該至少一金屬接合墊的步驟,包含:對接該至少一金屬接合墊與該些微型發光元件的該些電極;以該加熱溫度加熱熔融該至少一金屬接合墊,使熔融態的該至少一金屬接合墊浸潤該些電極;以及冷卻熔融態的該至少一金屬接合墊,使該至少一金屬接合墊連接該些電極。
- 如請求項1的微型發光元件陣列的製造方法,其中以該加熱溫度加熱熔融該至少一金屬接合墊並連接該些微型發光元件的該些電極與該至少一金屬接合墊的步驟,包含:以該加熱溫度加熱熔融該至少一金屬接合墊;對接熔融態的該至少一金屬接合墊與該些微型發光元件的該些電極,使熔融態的該至少一金屬接合墊浸潤該些電極;以及冷卻熔融態的該至少一金屬接合墊,使該至少一金屬接合墊連接該些電極。
- 如請求項1的微型發光元件陣列的製造方法,其中該至少一金屬接合墊的厚度為1微米至6微米。
- 如請求項1的微型發光元件陣列的製造方法,其中該至少一金屬接合墊的熔點小於該些電極的熔點,該加熱溫度介於該至少一金屬接合墊的熔點與該些電極的熔點之間。
- 如請求項1的微型發光元件陣列的製造方法,其中該加熱溫度低於該至少一金屬接合墊與該些電極進行共晶接合的一共晶溫度。
- 如請求項6的微型發光元件陣列的製造方法,其中該加熱溫度大於等於該至少一金屬接合墊與該些電極進行包晶接合的一包晶溫度。
- 如請求項6的微型發光元件陣列的製造方法,其中彼此相連接的該些電極與該至少一金屬接合墊為一假焊狀態。
- 如請求項1的微型發光元件陣列的製造方法,其中該至少一金屬接合墊的數量為複數個,且該些金屬接合墊陣列設置於該轉移基板。
- 如請求項1的微型發光元件陣列的製造方法,更包含:使再次加熱為熔融態的該至少一金屬接合墊附著於該些電極並冷卻形成固著於每一該些電極的一導電凸塊;提供一接收基板與複數個導電接合墊,該些導電接合墊陣列設置於該接收基板;以及加熱熔融該些導電凸塊,透過該些導電凸塊分別接合該些微型發光元件於該接收基板的該些導電接合墊。
- 如請求項1的微型發光元件陣列的製造方法,其中自該轉移基板分離該些微型發光元件的步驟係透過一轉移裝置拾取該些微型發光元件。
- 如請求項10的微型發光元件陣列的製造方法,其中熔融態的該至少一金屬接合墊的材料分子與該些電極的材料分子之間的吸引力大於熔融態的該至少一金屬接合墊的材料分子之間的吸引力。
- 如請求項10的微型發光元件陣列的製造方法,其中每一該些導電接合墊遠離該接收基板的表面設置有一輔助導電凸塊,透過該些導電凸塊與該些輔助導電凸塊,該些微型發光元件分別接合於該接收基板的該些導電接合墊。
- 如請求項10的微型發光元件陣列的製造方法,其中該些導電凸塊與該些導電接合墊為共晶接合。
- 一種轉移載板,用於接合一微型發光元件的一電極與轉移該微型發光元件,包含:一轉移基板;複數個金屬接合墊,設置於該轉移基板,該些金屬接合墊之間透過一分隔空間相分離;以及一隔離材料,填充於該分隔空間中,該隔離材料對於熔融態的該些金屬接合墊係不可浸潤的。
- 如請求項15的轉移載板,更包含一浸潤層,位於該轉移基板與該些金屬接合墊之間,且位於該轉移基板與該隔離材料之間,該浸潤層對於熔融態的該些金屬接合墊係可浸潤的。
- 如請求項15的轉移載板,更包含一間隔層,位於該轉移基板與該些金屬接合墊之間,且位於該轉移基板與該隔離材料之間,該間隔層對於熔融態的該些金屬接合墊係不可浸潤的。
- 一種轉移載板,用於接合一微型發光元件的一電極與轉移該微型發光元件,包含:一轉移基板;複數個金屬接合墊,設置於該轉移基板,該些金屬接合墊之間透過一分隔空間相分離;以及複數個凸塊底層金屬,分別位於該轉移基板與該些金屬接合墊之間,且該些凸塊底層金屬對於熔融態的該些金屬接合墊係可浸潤的。
- 如請求項18的轉移載板,更包含一間隔層,位於該凸塊底層金屬與該轉移基板之間,且該間隔層對於熔融態的該些金屬接合墊係不可浸潤的。
- 一種微型發光元件陣列,包含:一轉移載板,包含一轉移基板與至少一金屬接合墊,該至少一金屬接合墊設置於該轉移基板;以及複數個微型發光元件,每一該些微型發光元件的一表面具有至少一電極,該至少一電極具有彼此相鄰的一連接面與一側面,該至少一金屬接合墊連接各該些電極的該連接面與部分的該側面以固定該些微型發光元件於該轉移載板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106131483A TWI653694B (zh) | 2017-09-13 | 2017-09-13 | 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 |
US16/000,418 US10991846B2 (en) | 2017-09-13 | 2018-06-05 | Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array |
US17/157,737 US11450785B2 (en) | 2017-09-13 | 2021-01-25 | Transfer carrier for micro light-emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106131483A TWI653694B (zh) | 2017-09-13 | 2017-09-13 | 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI653694B true TWI653694B (zh) | 2019-03-11 |
TW201916189A TW201916189A (zh) | 2019-04-16 |
Family
ID=65632402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106131483A TWI653694B (zh) | 2017-09-13 | 2017-09-13 | 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 |
Country Status (2)
Country | Link |
---|---|
US (2) | US10991846B2 (zh) |
TW (1) | TWI653694B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110783252A (zh) * | 2019-10-18 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | 微型器件转移头及其制作方法、微型器件的转移方法 |
CN111029360A (zh) * | 2019-11-19 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | micro-LED显示器件的制作方法 |
TWI698964B (zh) * | 2019-03-15 | 2020-07-11 | 台灣愛司帝科技股份有限公司 | 晶片固接結構及晶片固接設備 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201911457A (zh) * | 2017-07-26 | 2019-03-16 | 優顯科技股份有限公司 | 用於批量移轉微半導體結構之方法 |
KR102107101B1 (ko) * | 2018-03-26 | 2020-05-12 | 영남대학교 산학협력단 | 마이크로 엘이디 검증용 기판과, 이의 제작 방법 및 이를 이용한 마이크로 엘이디 검증 방법 |
EP3742477A1 (en) * | 2019-05-21 | 2020-11-25 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO | Light induced selective transfer of components using a jet of melted adhesive |
WO2020242053A1 (en) | 2019-05-28 | 2020-12-03 | Samsung Electronics Co., Ltd. | Display apparatus, source substrate structure, driving substrate structure, and method of manufacturing display apparatus |
JP2020194886A (ja) * | 2019-05-28 | 2020-12-03 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ディスプレイ装置、ソース基板構造体、駆動基板構造体、およびディスプレイ装置の製造方法 |
US20200388735A1 (en) * | 2019-06-05 | 2020-12-10 | Mikro Mesa Technology Co., Ltd. | Electrical contact structure for light emitting diode |
CN112424958B (zh) * | 2019-06-13 | 2024-04-09 | 京东方科技集团股份有限公司 | 微型发光二极管的巨量转移方法及系统 |
CN112151665B (zh) * | 2019-06-27 | 2022-03-08 | 成都辰显光电有限公司 | 微发光二极管器件及其制备方法、显示面板及其制作方法 |
US20210015011A1 (en) * | 2019-07-09 | 2021-01-14 | Mikro Mesa Technology Co., Ltd. | Method for replacing or patching element of display device |
US10777527B1 (en) * | 2019-07-10 | 2020-09-15 | Mikro Mesa Technology Co., Ltd. | Method for transferring micro device |
CN110444547A (zh) * | 2019-07-29 | 2019-11-12 | 南京中电熊猫平板显示科技有限公司 | 一种微型发光二极管阵列显示背板及其制造方法 |
CN112582343B (zh) * | 2019-09-29 | 2022-12-06 | 成都辰显光电有限公司 | 一种生长基板及微元件的转移方法 |
TW202135276A (zh) * | 2019-10-29 | 2021-09-16 | 日商東京威力科創股份有限公司 | 附有晶片之基板的製造方法及基板處理裝置 |
CN112750923B (zh) * | 2019-10-31 | 2022-08-30 | 成都辰显光电有限公司 | 微元件的制程平台及其转移方法、接收基板的修复方法 |
CN112786511B (zh) * | 2019-11-04 | 2022-11-22 | 成都辰显光电有限公司 | 一种微元件的转移基板及转移方法 |
CN110752178A (zh) * | 2019-11-11 | 2020-02-04 | 佛山市国星半导体技术有限公司 | 一种便于转移的MicroLED芯片及其制作方法、转移方法 |
US11302561B2 (en) | 2019-11-12 | 2022-04-12 | Palo Alto Research Center Incorporated | Transfer elements that selectably hold and release objects based on changes in stiffness |
US11508704B2 (en) | 2019-12-17 | 2022-11-22 | Seoul Viosys Co., Ltd. | Method of repairing light emitting device and display panel having repaired light emitting device |
US11901497B2 (en) * | 2019-12-24 | 2024-02-13 | Seoul Viosys Co., Ltd. | Method of repairing light emitting device, apparatus for repairing light emitting device, and display panel having repaired light emitting device |
CN111244014B (zh) * | 2020-01-10 | 2023-02-03 | 福州京东方光电科技有限公司 | 一种转移基板、驱动背板、转移方法及显示装置 |
WO2021148895A1 (en) | 2020-01-22 | 2021-07-29 | King Abdullah University Of Science And Technology | Light processing device array and method for manufacturing thereof |
US11348905B2 (en) * | 2020-03-02 | 2022-05-31 | Palo Alto Research Center Incorporated | Method and system for assembly of micro-LEDs onto a substrate |
CN111540820A (zh) * | 2020-03-16 | 2020-08-14 | 重庆康佳光电技术研究院有限公司 | 一种led芯片的固晶方法及显示装置 |
CN113471346A (zh) * | 2020-03-31 | 2021-10-01 | 成都辰显光电有限公司 | 一种微发光二极管的修复方法 |
CN112993090B (zh) * | 2020-04-10 | 2022-03-22 | 重庆康佳光电技术研究院有限公司 | 一种微型发光二极体转移方法及显示装置 |
WO2021217607A1 (zh) * | 2020-04-30 | 2021-11-04 | 重庆康佳光电技术研究院有限公司 | 一种键合方法、显示背板及显示背板制造系统 |
TWI740486B (zh) * | 2020-05-05 | 2021-09-21 | 達邁科技股份有限公司 | 微型led巨量轉移至顯示器面板之方法 |
TWI762953B (zh) * | 2020-06-16 | 2022-05-01 | 台灣愛司帝科技股份有限公司 | 利用巨量轉移發光二極體晶片的面板製造方法 |
TWI756858B (zh) * | 2020-10-06 | 2022-03-01 | 吳伯仁 | 製造微發光二極體顯示器的系統與方法 |
CN112447786B (zh) * | 2020-11-23 | 2022-09-30 | 厦门天马微电子有限公司 | 发光二极管显示面板及其制作方法、发光二极管显示装置 |
CN114597138A (zh) * | 2020-12-03 | 2022-06-07 | 群创光电股份有限公司 | 半导体封装的制造方法 |
CN113447716B (zh) * | 2020-12-09 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | 一种显示面板的检测方法及显示面板 |
TWI747697B (zh) | 2021-01-05 | 2021-11-21 | 錼創顯示科技股份有限公司 | 半導體結構、顯示面板及電子元件模組的製造方法 |
CN112864146B (zh) * | 2021-01-05 | 2023-04-18 | 錼创显示科技股份有限公司 | 半导体结构、显示面板及电子元件模块的制造方法 |
CN112885764B (zh) * | 2021-01-13 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 转移基板及其制备方法、转移装置 |
CN113066801B (zh) * | 2021-03-19 | 2024-02-09 | 合肥京东方光电科技有限公司 | 背板结构、微型发光二极管显示面板及其制备方法 |
CN113488495B (zh) * | 2021-06-16 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制备方法 |
CN114864759B (zh) * | 2022-07-06 | 2022-09-20 | 罗化芯显示科技开发(江苏)有限公司 | 一种微发光二极管显示基板及其制造方法 |
CN118156398B (zh) * | 2024-05-10 | 2024-07-12 | 汕头超声显示器技术有限公司 | 一种led阵列装置的制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5159273B2 (ja) * | 2007-11-28 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 電子装置の製造方法 |
JP2010109032A (ja) * | 2008-10-29 | 2010-05-13 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法 |
US9583678B2 (en) * | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
JP6260814B2 (ja) * | 2011-06-02 | 2018-01-17 | パナソニックIpマネジメント株式会社 | 電子部品実装方法、電子部品搭載装置および電子部品実装システム |
WO2013137356A1 (ja) * | 2012-03-13 | 2013-09-19 | シチズンホールディングス株式会社 | 半導体発光装置及びその製造方法 |
JP6044885B2 (ja) * | 2012-08-08 | 2016-12-14 | パナソニックIpマネジメント株式会社 | 実装方法 |
US20190044023A1 (en) * | 2017-08-01 | 2019-02-07 | Innolux Corporation | Methods for manufacturing semiconductor device |
-
2017
- 2017-09-13 TW TW106131483A patent/TWI653694B/zh active
-
2018
- 2018-06-05 US US16/000,418 patent/US10991846B2/en active Active
-
2021
- 2021-01-25 US US17/157,737 patent/US11450785B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI698964B (zh) * | 2019-03-15 | 2020-07-11 | 台灣愛司帝科技股份有限公司 | 晶片固接結構及晶片固接設備 |
CN110783252A (zh) * | 2019-10-18 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | 微型器件转移头及其制作方法、微型器件的转移方法 |
CN111029360A (zh) * | 2019-11-19 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | micro-LED显示器件的制作方法 |
US11380660B2 (en) | 2019-11-19 | 2022-07-05 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of micro-LED display device |
Also Published As
Publication number | Publication date |
---|---|
US10991846B2 (en) | 2021-04-27 |
US11450785B2 (en) | 2022-09-20 |
US20210151622A1 (en) | 2021-05-20 |
TW201916189A (zh) | 2019-04-16 |
US20190081200A1 (en) | 2019-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI653694B (zh) | 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列 | |
US7362580B2 (en) | Electronic assembly having an indium wetting layer on a thermally conductive body | |
JP5378130B2 (ja) | 半導体発光装置 | |
US11798919B2 (en) | Transfer carrier and manufacturing method thereof, and method for transferring light-emitting diode chip | |
WO2020238099A1 (zh) | 微发光二极管的转移方法及显示面板的制作方法 | |
US20090017566A1 (en) | Substrate Removal During LED Formation | |
TW554553B (en) | Sub-mount for high power light emitting diode | |
Pan et al. | Wafer‐scale micro‐LEDs transferred onto an adhesive film for planar and flexible displays | |
CN102104090B (zh) | 发光二极管芯片固晶方法、固晶的发光二极管及芯片结构 | |
EP1915786A1 (en) | Alternating current light emitting device | |
TWI766654B (zh) | 顯示裝置、發光二極體基板以及顯示裝置的製造方法 | |
WO2007119571A1 (ja) | 半田層及びそれを用いたデバイス接合用基板並びに該デバイス接合用基板の製造方法 | |
JP5765981B2 (ja) | 発光装置 | |
CN111554586B (zh) | 一种芯片封装体的制备方法 | |
KR101189081B1 (ko) | 웨이퍼 기판 접합 구조, 이를 포함하는 발광 소자 및 그 제조 방법 | |
CN112786511B (zh) | 一种微元件的转移基板及转移方法 | |
TWI237407B (en) | Light emitting diode having an adhesive layer and manufacturing method thereof | |
JP2000216439A (ja) | チップ型発光素子およびその製造方法 | |
US8232119B2 (en) | Method for manufacturing heat dissipation bulk of semiconductor device | |
CN113284819A (zh) | 一种巨量转移方法 | |
CN112599651B (zh) | 阵列基板及转移方法 | |
US8836119B2 (en) | Semiconductor device | |
JP2012256665A (ja) | 半導体装置及びその製造方法 | |
US20080090334A1 (en) | Method for Manufacturing Semiconductor Device | |
CN216648342U (zh) | Led器件、显示装置及发光装置 |