TW201145502A - Semiconductor light-receiving element and optical module - Google Patents

Semiconductor light-receiving element and optical module Download PDF

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Publication number
TW201145502A
TW201145502A TW100103612A TW100103612A TW201145502A TW 201145502 A TW201145502 A TW 201145502A TW 100103612 A TW100103612 A TW 100103612A TW 100103612 A TW100103612 A TW 100103612A TW 201145502 A TW201145502 A TW 201145502A
Authority
TW
Taiwan
Prior art keywords
semiconductor
light
receiving element
main surface
semiconductor light
Prior art date
Application number
TW100103612A
Other languages
English (en)
Chinese (zh)
Inventor
Matobu Kikuchi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW201145502A publication Critical patent/TW201145502A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
TW100103612A 2010-06-03 2011-01-31 Semiconductor light-receiving element and optical module TW201145502A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010127802A JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール

Publications (1)

Publication Number Publication Date
TW201145502A true TW201145502A (en) 2011-12-16

Family

ID=44974027

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100103612A TW201145502A (en) 2010-06-03 2011-01-31 Semiconductor light-receiving element and optical module

Country Status (6)

Country Link
US (1) US8330243B2 (https=)
JP (1) JP2011253987A (https=)
KR (1) KR101296192B1 (https=)
CN (1) CN102270666A (https=)
DE (1) DE102011076887A1 (https=)
TW (1) TW201145502A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI666784B (zh) * 2015-02-16 2019-07-21 日商艾普凌科有限公司 具有受光元件之光檢測半導體裝置

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JP2015176904A (ja) * 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP2018066888A (ja) * 2016-10-20 2018-04-26 住友電気工業株式会社 光モジュール
US10365448B2 (en) 2017-12-15 2019-07-30 Sumitomo Electric Industries, Ltd. Optical module having two lens system and monitor photodiode between two lenses
DE102020117238B4 (de) * 2020-06-30 2025-03-27 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
JP7674083B2 (ja) 2020-08-26 2025-05-09 浜松ホトニクス株式会社 光検出装置
JPWO2022074780A1 (https=) * 2020-10-08 2022-04-14

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JP2847561B2 (ja) 1990-04-16 1999-01-20 富士通株式会社 半導体受光素子
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
US5345074A (en) * 1990-11-13 1994-09-06 Sumitomo Electric Industries, Ltd. Semiconductor light source
JP2765321B2 (ja) * 1991-11-29 1998-06-11 日本電気株式会社 半導体受光素子
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
JP3115148B2 (ja) 1993-03-31 2000-12-04 株式会社東芝 半導体装置の製造方法
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JP3419312B2 (ja) * 1998-07-21 2003-06-23 住友電気工業株式会社 受光素子及び受光素子モジュール
US6043550A (en) 1997-09-03 2000-03-28 Sumitomo Electric Industries, Ltd. Photodiode and photodiode module
JP3221402B2 (ja) 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
JP3931545B2 (ja) * 2000-03-22 2007-06-20 住友電気工業株式会社 発光モジュール
WO2002063730A1 (fr) * 2001-02-05 2002-08-15 Sumitomo Electric Industries, Ltd. Emetteur optique
JP2002289904A (ja) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd 半導体受光素子とその製造方法
US6888857B2 (en) * 2001-09-21 2005-05-03 Sumitomo Electric Industries, Ltd. Optical module
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JP2005072130A (ja) 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
JPWO2005053124A1 (ja) * 2003-11-28 2010-02-04 日本電気株式会社 分布帰還型半導体レーザ、分布帰還型半導体レーザアレイ及び光モジュール
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI666784B (zh) * 2015-02-16 2019-07-21 日商艾普凌科有限公司 具有受光元件之光檢測半導體裝置

Also Published As

Publication number Publication date
JP2011253987A (ja) 2011-12-15
DE102011076887A1 (de) 2011-12-08
CN102270666A (zh) 2011-12-07
KR20110132990A (ko) 2011-12-09
KR101296192B1 (ko) 2013-08-13
US20110297967A1 (en) 2011-12-08
US8330243B2 (en) 2012-12-11

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