DE102011076887A1 - Licht empfangendes Halbleiterelement und optisches Modul - Google Patents

Licht empfangendes Halbleiterelement und optisches Modul Download PDF

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Publication number
DE102011076887A1
DE102011076887A1 DE102011076887A DE102011076887A DE102011076887A1 DE 102011076887 A1 DE102011076887 A1 DE 102011076887A1 DE 102011076887 A DE102011076887 A DE 102011076887A DE 102011076887 A DE102011076887 A DE 102011076887A DE 102011076887 A1 DE102011076887 A1 DE 102011076887A1
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DE
Germany
Prior art keywords
light
semiconductor
receiving
semiconductor element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102011076887A
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German (de)
English (en)
Inventor
Matobu Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102011076887A1 publication Critical patent/DE102011076887A1/de
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
DE102011076887A 2010-06-03 2011-06-01 Licht empfangendes Halbleiterelement und optisches Modul Ceased DE102011076887A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-127802 2010-06-03
JP2010127802A JP2011253987A (ja) 2010-06-03 2010-06-03 半導体受光素子及び光モジュール

Publications (1)

Publication Number Publication Date
DE102011076887A1 true DE102011076887A1 (de) 2011-12-08

Family

ID=44974027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011076887A Ceased DE102011076887A1 (de) 2010-06-03 2011-06-01 Licht empfangendes Halbleiterelement und optisches Modul

Country Status (6)

Country Link
US (1) US8330243B2 (https=)
JP (1) JP2011253987A (https=)
KR (1) KR101296192B1 (https=)
CN (1) CN102270666A (https=)
DE (1) DE102011076887A1 (https=)
TW (1) TW201145502A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT523976A3 (de) * 2020-06-30 2024-04-15 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176904A (ja) * 2014-03-13 2015-10-05 三菱電機株式会社 半導体受光素子
JP6518076B2 (ja) * 2015-02-16 2019-05-22 エイブリック株式会社 受光素子を有する光検出半導体装置
JP2018066888A (ja) * 2016-10-20 2018-04-26 住友電気工業株式会社 光モジュール
US10365448B2 (en) 2017-12-15 2019-07-30 Sumitomo Electric Industries, Ltd. Optical module having two lens system and monitor photodiode between two lenses
JP7674083B2 (ja) 2020-08-26 2025-05-09 浜松ホトニクス株式会社 光検出装置
JPWO2022074780A1 (https=) * 2020-10-08 2022-04-14

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036615A (ja) 1998-07-21 2000-02-02 Sumitomo Electric Ind Ltd 受光素子及び受光素子モジュール

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DE69123280T2 (de) 1990-04-16 1997-03-20 Fujitsu Ltd Halbleitervorrichtung mit lichtempfindlichem Element und Verfahren zu deren Herstellung
JP2847561B2 (ja) 1990-04-16 1999-01-20 富士通株式会社 半導体受光素子
JP2945438B2 (ja) * 1990-04-23 1999-09-06 株式会社日立製作所 光半導体装置及びそれを用いた受光器
US5345074A (en) * 1990-11-13 1994-09-06 Sumitomo Electric Industries, Ltd. Semiconductor light source
JP2765321B2 (ja) * 1991-11-29 1998-06-11 日本電気株式会社 半導体受光素子
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
JP3115148B2 (ja) 1993-03-31 2000-12-04 株式会社東芝 半導体装置の製造方法
JPH1117211A (ja) 1997-06-26 1999-01-22 Hitachi Ltd 半導体面型受光素子及び装置
US6043550A (en) 1997-09-03 2000-03-28 Sumitomo Electric Industries, Ltd. Photodiode and photodiode module
JP3221402B2 (ja) 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
JP3931545B2 (ja) * 2000-03-22 2007-06-20 住友電気工業株式会社 発光モジュール
WO2002063730A1 (fr) * 2001-02-05 2002-08-15 Sumitomo Electric Industries, Ltd. Emetteur optique
JP2002289904A (ja) * 2001-03-23 2002-10-04 Sumitomo Electric Ind Ltd 半導体受光素子とその製造方法
US6888857B2 (en) * 2001-09-21 2005-05-03 Sumitomo Electric Industries, Ltd. Optical module
EP1396913A1 (en) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Single mode distributed feedback lasers
JP2005072130A (ja) 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
JPWO2005053124A1 (ja) * 2003-11-28 2010-02-04 日本電気株式会社 分布帰還型半導体レーザ、分布帰還型半導体レーザアレイ及び光モジュール
JP2006147991A (ja) 2004-11-24 2006-06-08 Canon Inc 固体撮像素子及びそれを有する光学機器
JP2007013015A (ja) * 2005-07-04 2007-01-18 Sumitomo Electric Ind Ltd 半導体受光素子
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JP2008047580A (ja) * 2006-08-11 2008-02-28 Sumitomo Electric Ind Ltd 半導体受光素子
US7670638B2 (en) 2007-05-17 2010-03-02 Sunpower Corporation Protection layer for fabricating a solar cell
KR101444709B1 (ko) 2007-11-16 2014-09-30 주성엔지니어링(주) 기판형 태양전지 및 그 제조방법
JP5303962B2 (ja) * 2008-02-28 2013-10-02 三菱電機株式会社 半導体受光素子
US8476681B2 (en) * 2009-09-17 2013-07-02 Sionyx, Inc. Photosensitive imaging devices and associated methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000036615A (ja) 1998-07-21 2000-02-02 Sumitomo Electric Ind Ltd 受光素子及び受光素子モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT523976A3 (de) * 2020-06-30 2024-04-15 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement
AT523976B1 (de) * 2020-06-30 2024-10-15 First Sensor AG Anordnung für ein optoelektronisches Bauelement, Verfahren zum Herstellen und optoelektronisches Bauelement

Also Published As

Publication number Publication date
JP2011253987A (ja) 2011-12-15
TW201145502A (en) 2011-12-16
CN102270666A (zh) 2011-12-07
KR20110132990A (ko) 2011-12-09
KR101296192B1 (ko) 2013-08-13
US20110297967A1 (en) 2011-12-08
US8330243B2 (en) 2012-12-11

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Effective date: 20140513