JPWO2022074780A1 - - Google Patents
Info
- Publication number
- JPWO2022074780A1 JPWO2022074780A1 JP2022555045A JP2022555045A JPWO2022074780A1 JP WO2022074780 A1 JPWO2022074780 A1 JP WO2022074780A1 JP 2022555045 A JP2022555045 A JP 2022555045A JP 2022555045 A JP2022555045 A JP 2022555045A JP WO2022074780 A1 JPWO2022074780 A1 JP WO2022074780A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/038106 WO2022074780A1 (ja) | 2020-10-08 | 2020-10-08 | 半導体受光素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022074780A1 true JPWO2022074780A1 (https=) | 2022-04-14 |
Family
ID=81126780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022555045A Pending JPWO2022074780A1 (https=) | 2020-10-08 | 2020-10-08 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230361226A1 (https=) |
| JP (1) | JPWO2022074780A1 (https=) |
| WO (1) | WO2022074780A1 (https=) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208578A (ja) * | 1990-12-03 | 1992-07-30 | Nec Corp | 半導体受光素子 |
| JPH09223816A (ja) * | 1996-02-16 | 1997-08-26 | Hamamatsu Photonics Kk | 半導体受光素子 |
| JP2001028454A (ja) * | 1999-07-15 | 2001-01-30 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
| JP2001320081A (ja) * | 2000-05-12 | 2001-11-16 | Fujitsu Ltd | 半導体受光素子 |
| JP2002151730A (ja) * | 2000-11-14 | 2002-05-24 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
| JP2002252366A (ja) * | 2000-12-19 | 2002-09-06 | Fujitsu Quantum Devices Ltd | 半導体受光装置 |
| JP2002289904A (ja) * | 2001-03-23 | 2002-10-04 | Sumitomo Electric Ind Ltd | 半導体受光素子とその製造方法 |
| JP2004158763A (ja) * | 2002-11-08 | 2004-06-03 | Toshiba Corp | 半導体受光素子 |
| JP2004241588A (ja) * | 2003-02-05 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 受光素子およびその製造方法ならびに当該受光素子を用いた光モジュール |
| JP2011253987A (ja) * | 2010-06-03 | 2011-12-15 | Mitsubishi Electric Corp | 半導体受光素子及び光モジュール |
| JP2015176904A (ja) * | 2014-03-13 | 2015-10-05 | 三菱電機株式会社 | 半導体受光素子 |
| JP2018098399A (ja) * | 2016-12-14 | 2018-06-21 | 日本電信電話株式会社 | 半導体受光素子 |
| WO2019150534A1 (ja) * | 2018-02-01 | 2019-08-08 | 株式会社京都セミコンダクター | 半導体受光素子 |
| KR102093168B1 (ko) * | 2019-02-22 | 2020-03-25 | 이상환 | 이중 광경로를 가진 광 검출기 |
-
2020
- 2020-10-08 JP JP2022555045A patent/JPWO2022074780A1/ja active Pending
- 2020-10-08 US US18/246,595 patent/US20230361226A1/en active Pending
- 2020-10-08 WO PCT/JP2020/038106 patent/WO2022074780A1/ja not_active Ceased
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04208578A (ja) * | 1990-12-03 | 1992-07-30 | Nec Corp | 半導体受光素子 |
| JPH09223816A (ja) * | 1996-02-16 | 1997-08-26 | Hamamatsu Photonics Kk | 半導体受光素子 |
| JP2001028454A (ja) * | 1999-07-15 | 2001-01-30 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
| JP2001320081A (ja) * | 2000-05-12 | 2001-11-16 | Fujitsu Ltd | 半導体受光素子 |
| JP2002151730A (ja) * | 2000-11-14 | 2002-05-24 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
| JP2002252366A (ja) * | 2000-12-19 | 2002-09-06 | Fujitsu Quantum Devices Ltd | 半導体受光装置 |
| JP2002289904A (ja) * | 2001-03-23 | 2002-10-04 | Sumitomo Electric Ind Ltd | 半導体受光素子とその製造方法 |
| JP2004158763A (ja) * | 2002-11-08 | 2004-06-03 | Toshiba Corp | 半導体受光素子 |
| JP2004241588A (ja) * | 2003-02-05 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 受光素子およびその製造方法ならびに当該受光素子を用いた光モジュール |
| JP2011253987A (ja) * | 2010-06-03 | 2011-12-15 | Mitsubishi Electric Corp | 半導体受光素子及び光モジュール |
| JP2015176904A (ja) * | 2014-03-13 | 2015-10-05 | 三菱電機株式会社 | 半導体受光素子 |
| JP2018098399A (ja) * | 2016-12-14 | 2018-06-21 | 日本電信電話株式会社 | 半導体受光素子 |
| WO2019150534A1 (ja) * | 2018-02-01 | 2019-08-08 | 株式会社京都セミコンダクター | 半導体受光素子 |
| KR102093168B1 (ko) * | 2019-02-22 | 2020-03-25 | 이상환 | 이중 광경로를 가진 광 검출기 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20230361226A1 (en) | 2023-11-09 |
| WO2022074780A1 (ja) | 2022-04-14 |
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