TW201130022A - Methods of fabricating stacked device and handling device wafer - Google Patents

Methods of fabricating stacked device and handling device wafer

Info

Publication number
TW201130022A
TW201130022A TW099123933A TW99123933A TW201130022A TW 201130022 A TW201130022 A TW 201130022A TW 099123933 A TW099123933 A TW 099123933A TW 99123933 A TW99123933 A TW 99123933A TW 201130022 A TW201130022 A TW 201130022A
Authority
TW
Taiwan
Prior art keywords
wafer
adhesive layer
carrier
methods
edge
Prior art date
Application number
TW099123933A
Other languages
English (en)
Other versions
TWI446419B (zh
Inventor
Wen-Jin Wu
Wen-Chih Chiou
Shau-Lin Shue
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of TW201130022A publication Critical patent/TW201130022A/zh
Application granted granted Critical
Publication of TWI446419B publication Critical patent/TWI446419B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
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    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
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    • H01L2224/13001—Core members of the bump connector
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
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TW099123933A 2010-02-18 2010-07-21 堆疊裝置的製造方法及裝置晶圓處理方法 TWI446419B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/707,752 US7883991B1 (en) 2010-02-18 2010-02-18 Temporary carrier bonding and detaching processes

Publications (2)

Publication Number Publication Date
TW201130022A true TW201130022A (en) 2011-09-01
TWI446419B TWI446419B (zh) 2014-07-21

Family

ID=43531937

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099123933A TWI446419B (zh) 2010-02-18 2010-07-21 堆疊裝置的製造方法及裝置晶圓處理方法

Country Status (3)

Country Link
US (1) US7883991B1 (zh)
CN (1) CN102163559B (zh)
TW (1) TWI446419B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499019B (zh) * 2011-09-30 2015-09-01 Intel Corp 晶片結構、3d封裝結構及用以形成封裝結構之方法
TWI616504B (zh) * 2014-11-07 2018-03-01 萬國商業機器公司 晶圓接合用低溫黏著樹脂

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200616968A (en) * 2004-08-27 2006-06-01 Ono Pharmaceutical Co Compound having basic substituent and application thereof
ES2407115T3 (es) 2005-11-18 2013-06-11 Ono Pharmaceutical Co., Ltd. Compuesto que contiene un grupo básico y uso del mismo
EP2042503B1 (en) * 2006-05-16 2013-01-30 Ono Pharmaceutical Co., Ltd. Compound having acidic group which may be protected, and use thereof
JP2011040419A (ja) * 2008-05-22 2011-02-24 Fuji Electric Systems Co Ltd 半導体装置の製造方法及びそのための装置
US8232140B2 (en) * 2009-03-27 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method for ultra thin wafer handling and processing
US9768305B2 (en) 2009-05-29 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Gradient ternary or quaternary multiple-gate transistor
TWI419302B (zh) * 2010-02-11 2013-12-11 Advanced Semiconductor Eng 封裝製程
FR2957190B1 (fr) * 2010-03-02 2012-04-27 Soitec Silicon On Insulator Procede de realisation d'une structure multicouche avec detourage par effets thermomecaniques.
WO2011144226A1 (de) * 2010-05-20 2011-11-24 Ev Group E. Thallner Gmbh Verfahren zur herstellung von chipstapeln sowie einen träger für die durchführung des verfahrens
US8722540B2 (en) * 2010-07-22 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling defects in thin wafer handling
US9263314B2 (en) 2010-08-06 2016-02-16 Brewer Science Inc. Multiple bonding layers for thin-wafer handling
US8324105B2 (en) * 2010-08-13 2012-12-04 Victory Gain Group Corporation Stacking method and stacking carrier
JP2012109538A (ja) 2010-10-29 2012-06-07 Tokyo Ohka Kogyo Co Ltd 積層体、およびその積層体の分離方法
JP5756334B2 (ja) 2010-10-29 2015-07-29 東京応化工業株式会社 積層体、およびその積層体の分離方法
JP5802106B2 (ja) 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
CN103403855B (zh) * 2011-02-28 2017-02-22 道康宁公司 晶片结合系统及其结合与剥离的方法
US8551881B2 (en) * 2011-04-25 2013-10-08 Nanya Technology Corporation Method of bevel trimming three dimensional semiconductor device
JP2013008915A (ja) * 2011-06-27 2013-01-10 Toshiba Corp 基板加工方法及び基板加工装置
US8829676B2 (en) 2011-06-28 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure for wafer level package
JP2013030537A (ja) * 2011-07-27 2013-02-07 Elpida Memory Inc 半導体装置の製造方法
JP5421967B2 (ja) * 2011-09-07 2014-02-19 東京エレクトロン株式会社 接合方法、プログラム、コンピュータ記憶媒体及び接合システム
US8409927B1 (en) * 2011-09-23 2013-04-02 GlobalFoundries, Inc. Methods for fabricating integrated circuit systems including high reliability die under-fill
US20130075892A1 (en) * 2011-09-27 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Three Dimensional Integrated Circuit Fabrication
DE102012101237A1 (de) 2012-02-16 2013-08-22 Ev Group E. Thallner Gmbh Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
US8697542B2 (en) * 2012-04-12 2014-04-15 The Research Foundation Of State University Of New York Method for thin die-to-wafer bonding
TWI468787B (zh) * 2012-04-25 2015-01-11 Mirle Automation Corp 暫時性貼合方法及其貼合設備
US9064770B2 (en) * 2012-07-17 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for minimizing edge peeling in the manufacturing of BSI chips
US9269623B2 (en) 2012-10-25 2016-02-23 Rohm And Haas Electronic Materials Llc Ephemeral bonding
KR102075635B1 (ko) 2013-01-03 2020-03-02 삼성전자주식회사 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법
US9368460B2 (en) 2013-03-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out interconnect structure and method for forming same
JP6214182B2 (ja) * 2013-03-25 2017-10-18 東京応化工業株式会社 基板の処理方法
WO2014188879A1 (ja) * 2013-05-24 2014-11-27 富士電機株式会社 半導体装置の製造方法
TWI576190B (zh) * 2013-08-01 2017-04-01 Ibm 使用中段波長紅外光輻射燒蝕之晶圓剝離
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
JP6295066B2 (ja) * 2013-11-20 2018-03-14 東京応化工業株式会社 処理方法
CN103632926B (zh) * 2013-11-27 2016-04-13 中国电子科技集团公司第四十一研究所 一种用于超薄石英基片上电镀薄膜电路图形的方法
US9870946B2 (en) * 2013-12-31 2018-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level package structure and method of forming same
KR20150092675A (ko) * 2014-02-05 2015-08-13 삼성전자주식회사 반도체 소자의 제조 방법
US9355881B2 (en) 2014-02-18 2016-05-31 Infineon Technologies Ag Semiconductor device including a dielectric material
JP6423616B2 (ja) * 2014-05-22 2018-11-14 株式会社ディスコ ウェーハの加工方法
US9184104B1 (en) * 2014-05-28 2015-11-10 Stats Chippac, Ltd. Semiconductor device and method of forming adhesive layer over insulating layer for bonding carrier to mixed surfaces of semiconductor die and encapsulant
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
US10522383B2 (en) 2015-03-25 2019-12-31 International Business Machines Corporation Thermoplastic temporary adhesive for silicon handler with infra-red laser wafer de-bonding
WO2016179278A1 (en) * 2015-05-04 2016-11-10 Eoplex Limited Lead carrier structure and packages formed therefrom without die attach pads
WO2016180456A1 (en) * 2015-05-08 2016-11-17 Imec Vzw Method for manufacturing device substrate and semiconductor device
CN107403755A (zh) * 2016-05-19 2017-11-28 胡川 芯片制作方法
CN108242393B (zh) * 2016-12-23 2021-04-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN117878055A (zh) * 2016-12-28 2024-04-12 艾德亚半导体接合科技有限公司 堆栈基板的处理
KR20180090494A (ko) 2017-02-03 2018-08-13 삼성전자주식회사 기판 구조체 제조 방법
US10340251B2 (en) 2017-04-26 2019-07-02 Nxp Usa, Inc. Method for making an electronic component package
US10403598B2 (en) * 2017-08-11 2019-09-03 Micron Technology, Inc. Methods and system for processing semiconductor device structures
US10326044B2 (en) * 2017-08-18 2019-06-18 Micron Technology, Inc. Method and apparatus for processing semiconductor device structures
KR102430496B1 (ko) 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
US10559486B1 (en) * 2018-01-10 2020-02-11 Facebook Technologies, Llc Method for polymer-assisted chip transfer
US10388516B1 (en) * 2018-01-10 2019-08-20 Facebook Technologies, Llc Method for polymer-assisted chip transfer
US10586725B1 (en) * 2018-01-10 2020-03-10 Facebook Technologies, Llc Method for polymer-assisted chip transfer
US10910287B2 (en) * 2018-02-28 2021-02-02 Stmicroelectronics Pte Ltd Semiconductor package with protected sidewall and method of forming the same
WO2020159856A1 (en) * 2019-01-28 2020-08-06 Amerasia International Technology, Inc. Semiconductor wafer processing system and method
KR20210012302A (ko) * 2019-07-24 2021-02-03 삼성전자주식회사 이미지 센서 칩을 포함하는 반도체 패키지 및 이의 제조 방법
JP7189106B2 (ja) * 2019-09-13 2022-12-13 株式会社東芝 保持板および基板の研磨方法
CN111755377B (zh) * 2020-06-29 2022-02-11 西安微电子技术研究所 一种晶圆解键合方法
CN112959211B (zh) * 2021-02-22 2021-12-31 长江存储科技有限责任公司 晶圆处理装置和处理方法
JP2023038075A (ja) * 2021-09-06 2023-03-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
CN115881541A (zh) * 2021-09-28 2023-03-31 聚力成半导体(上海)有限公司 半导体装置的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020121693A1 (en) * 2000-12-11 2002-09-05 Milla Juan G. Stacked die package
US6479321B2 (en) * 2001-03-23 2002-11-12 Industrial Technology Research Institute One-step semiconductor stack packaging method
JP4613709B2 (ja) * 2005-06-24 2011-01-19 セイコーエプソン株式会社 半導体装置の製造方法
US7462551B2 (en) 2005-09-30 2008-12-09 Intel Corporation Adhesive system for supporting thin silicon wafer
CN101611481A (zh) * 2007-01-09 2009-12-23 英飞凌科技股份有限公司 半导体封装

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499019B (zh) * 2011-09-30 2015-09-01 Intel Corp 晶片結構、3d封裝結構及用以形成封裝結構之方法
US9252111B2 (en) 2011-09-30 2016-02-02 Intel Corporation Method for handling very thin device wafers
TWI550796B (zh) * 2011-09-30 2016-09-21 英特爾公司 用於處理極薄裝置晶圓的方法
TWI616504B (zh) * 2014-11-07 2018-03-01 萬國商業機器公司 晶圓接合用低溫黏著樹脂

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